Abstract: A method of producing a Schottky junction including a semiconductor substrate and a metal film includes successively producing on a semiconductor substrate a first insulating film, a second film having a different etching speed from that of the first insulating film, and a third insulating film having a different etching speed from that of said second film, exposing a part of the second film by dry etching the third insulating film, etching the second film using the third insulating film as a mask to expose part of the first insulating film, dry etching the first insulating film to expose part of the substrate, and producing a metal film forming a Schottky junction with the substrate on the exposed part of the semiconductor substrate.

Abstract: An image sensor using a charge sweep device as a vertical transfer device (3) and comprising a plurality of pixels (10) each of which is formed of a single photo-electro transforming element (1) and a single transfer gate (4) for transferring a signal charge from the photo-electro transforming element into the charge sweep device (3), wherein the width of the transfer gate (4) is equal to or larger than that of the photo-electro transforming element in the direction of charge transfer in the charge sweep device (3).

Abstract: A semiconductor device package comprising a package wall through which the position of the semiconductor device is to be determined. The package wall has apertures for exposing edges of the semiconductor device, thereby allowing the position of the semiconductor device to be determined accurately.

Abstract: A semiconductor device comprising a semiconductor element, a support member for supporting the semiconductor element and a bonding layer for bonding the semiconductor element on the support member. The bonding layer comprises a hard layer of a high-viscosity bonding agent which has a high viscosity before curing and which has an irregular free surface defining projections and cavities, and a soft layer of a low-viscosity bonding agent which has a low viscosity before curring and disposed within the cavities in the irregular free surface of the hard layer to fill them. The hard layer defining a portion of the bonding surfaces and the soft layer defining the remaining portion of the bonding surface to provide a continuous hybrid bonding surface for the bonding layer. A process for bonding a semiconductor element to a support member is also disclosed.

Abstract: A semiconductor device comprising a semiconductor element, a support member for supporting the semiconductor element on the support member. The bonding layer comprises element and a bonding layer for bonding the semiconductor a hard layer of a high-viscosity bonding agent which has a high viscosity before curing and which has an irregular free surface defining projections and cavities, and a soft layer of a low-viscosity bonding agent which has a low viscosity before curing and disposed within the cavities in the irregular free surface of the hard layer to fill them. The hard layer defining a portion of the bonding surfaces and the soft layer defining the remaining portion of the bonding surface provide a continuous hybrid bonding surface for the bonding layer. A process for bonding a semiconductor element to a support member is also disclosed.

Abstract: A device for detecting light having an improved sensitivity and a method for producing the device. N.sup.+ source and drain regions are formed on a P-type silicon substrate. The substrate is then covered with an oxidation resistant layer of SiO.sub.2. A layer of Pt-Si is then deposited between the source and drain regions and a P-type polysilicon layer is deposited on the Pt-Si layer. The device is then annealed to form a Schottky junction between the polysilicon layer and the Pt-Si layer following which a gate electrode is formed on the polysilicon layer.

Abstract: An n-channel MOS dynamic memory cell includes a semiconductor substrate having a p.sup.+ internal region and a p.sup.- surface region disposed on the surface of the internal region except for an n.sup.+ region serving as a bit line, a capacitor electrode disposed above the surface region, and a transfer gate disposed between the capacitor electrode and the n.sup.+ region above the surface region. The surface region except for the n.sup.+ region and a portion of the internal region disposed below the transfer gate are higher in resistivity than at least one of a portion of the internal region disposed below the capacitor electrode and another portion of the internal region disposed below the n.sup.+ region.

Abstract: A device for detecting infrared rays and a method for manufacturing the same having an improved sensitivity in the infrared range. A first region of a second conductivity type is formed on a substrate of a first conductivity type by diffusion or ion-implantation. Second and third regions of the same conductivity type as the substrate are formed in the first region and the substrate by diffusion or ion-implantation. A metal such as platinum, gold or palladium is evaporated onto an exposed part of the first region by sputtering. The metal layer thus deposited is annealed to form a Schottky contact.

Abstract: A device for detecting light having an improved sensitivity and a method for producing the device. N.sup.+ source and drain regions are formed on a P-type silicon substrate. The substrate is then covered with an oxidation resistant layer of SiO.sub.2. A layer of Pt-Si is then deposited between the source and drain regions and a P-type polysilicon layer is deposited on the Pt-Si layer. The device is then annealed to form a Schottky junction between the polysilicon layer and the Pt-Si layer following which a gate electrode is formed on the polysilicon layer.

Abstract: A nitride film is formed on a main surface of a semiconductor substrate by plasma CVD process and an oxygen-containing layer is formed on the nitride film and an aluminum-containing film is further formed on the oxygen-containing layer.

Abstract: A plasma treating apparatus includes: an air-core coil for generating a static magnetic field which is axially uniform and a high-frequency waveguide for generating a high-frequency electromagnetic field which is irregular in the axial direction of the air-core coil. A plasma generating glass tube is disposed in the high-frequency waveguide and adapted to be supplied with a gas and a plasma reaction bath held under a vacuum for receiving the plasma flow which is generated axially in the glass tube. A substrate platform is disposed in the reaction bath for supporting a substrate to be treated at a right angle with respect to the plasma flow. There is also included a magnetic field generating coil disposed outside of said reaction bath for shaping the plasma.

Abstract: A multilayer interconnection is prepared by forming a stable insulating film on a nitride film which is formed on a first interconnection metal layer, and then, a second interconnection metal layer is formed on the insulating film. The insulating film can be made of aluminum oxide, an oxynitride or the other metal oxide. A silicon rich layer can be used for this purpose.