Abstract: A combination of a sprocket wheel and a rapier band employed in a rapier loom is improved for extending the service life of the rapier band. Each of the female holes formed in the rapier band for receiving teeth of the sprocket wheel is formed in a frustum-like shape. The teeth of the sprocket wheel have tooth surfaces each including a non-interference portion located above an expansion/contraction-insusceptible layer of the rapier band and an interference portion located underneath the expansion/contraction-insusceptible layer. The non-interference portions do not contact the tooth surfaces, while the interference portions are brought into contact with the wall surfaces of the hole formed in the rapier band when the band is wrapped around the sprocket wheel.

Abstract: A high density nonvolatilized semiconductor integrated circuit is comprised of a Dynamic RAM (DRAM) cell unit and a nonvolatile cell unit. The DRAM cell unit is comprised of a first transistor having its gate connected to a word line, its source connected to a bit line and its drain connected to a first capacitor. The first capacitor has its other electrode connected to a first line. The nonvolatile RAM cell unit is comprised of a second transistor having its gate connected to a second line, its source connected to the bit line and its drain connected to a second capacitor. The second capacitor has its other electrode connected to a third line. The second capacitor comprises a ferroelectric substance to which a reverse voltage is applied in order to read out its signal, and the first capacitor comprises a paraelectric substance to which such reverse voltage is not applied. The cycle life of the DRAM cell unit is thereby increased.

Abstract: An impurity adsorption layer is selectively formed from a gas containing an impurity on a semiconductor surface. Solid-phase diffusion of the impurity is effected from the impurity adsorption layer into the semiconductor surface to form a source region and a drain region having a sufficiently small resistivity and an ultrashallow PN junction depth, thereby producing a metal-insulator semiconductor field-effect-transistor featuring fast operating speed and reduced dimensions.