Abstract: A processing device, comprising a processing container, a shower head structure provided at the ceiling part of the processing container and having a plurality of gas jetting holes for jetting specified processing gas into the processing container formed in the gas jetting surface thereof facing the inside of the processing container, and a placing stand disposed in the processing container so as to face the shower head structure, wherein a head distance between the gas jetting surface and the placing stand and the blowing speed of gas from the gas jetting holes are set within the range surrounded by connecting, in a square shape with straight lines in a plane coordinate system having the head distance plotted on an abscissa and the gas jetting speed plotted on a coordinate, a point where the blowing speed of the gas from the gas jetting holes at the head distance of 15 mm is 32 m/sec, a point where the blowing speed of the gas from the gas jetting holes at the head distance of 15 mm is 67 m/sec, a point wher

Abstract: A processing device, comprising a processing container, a shower head structure provided at the ceiling part of the processing container and having a plurality of gas jetting holes for jetting specified processing gas into the processing container formed in the gas jetting surface thereof facing the inside of the processing container, and a placing stand disposed in the processing container so as to face the shower head structure, wherein a head distance between the gas jetting surface and the placing stand and the blowing speed of gas from the gas jetting holes are set within the range surrounded by connecting, in a square shape with straight lines in a plane coordinate system having the head distance plotted on an abscissa and the gas jetting speed plotted on a coordinate, a point where the blowing speed of the gas from the gas jetting holes at the head distance of 15 mm is 32 m/sec, a point where the blowing speed of the gas from the gas jetting holes at the head distance of 15 mm is 67 m/sec, a point wher

Abstract: An electrode and/or wiring having a polycide structure is formed with voids V therein at the preparing stage as shown in FIG. 3. If the scale down and lowering of resistance of the electrode and/or wiring further proceed in future, the influence of the voids becomes obvious to lower yields. According to the present invention, a method for depositing a tungsten silicide film is characterized in that when a tungsten silicide layer is formed on a polysilicon layer, a phosphorus atom containing gas is added to a reactive gas at least in the initial stage that the tungsten silicide layer is formed, and the amount of the added phosphorus atom containing gas is set to be in the range of from 0.2 vol. % to 0.45 vol. %.

Abstract: A cleaning gas includes HF gas whose concentration is greater than or equal to 1 vol % and oxygen containing gas whose concentration ranges from 0.5 to 99 vol %. The oxygen containing gas includes at least one of O2 gas, O3 gas, N2O gas, NO gas, CO gas and CO2 gas. The cleaning gas is employed to remove a deposited material generated in a vacuum treatment apparatus for producing a thin film of at least one of Ti, W, Ta, Ru, Ir, a compound thereof and an alloy thereof.

Abstract: A heat treatment method for heat treating a thin film is a method for heat treating the thin film having a metallic silicide layer, comprising a heating step, a temperature keeping step and a cooling step. Among these steps, the thin film is heated in an atmosphere of gas which is oxidizing gas or includes oxidizing gas at least in the heating step. An oxide film is formed on the thin film in the heating step to prevent the phosphorous atoms from escaping.

Abstract: An electrode and/or wiring having a polycide structure is formed with voids V therein at the preparing stage as shown in FIG. 3. If the scale down and lowering of resistance of the electrode and/or wiring further proceed in future, the influence of the voids becomes obvious to lower yields.

Abstract: This invention provides a method and apparatus for vapor-phase processing (e.g., plasma-processing) the object to be tested, thereby removing the insulating oxide films at least at portions on the electrodes with which measurement contactors come into contact, bringing the measurement contactors into contact with the portions on the electrodes from which the films have been removed, and testing the electrical characteristics of the object to be tested.

Abstract: A heat-resistive electrode material substantially consisting of 40 to 60 wt % of at least one of ZrB.sub.2 and TiB.sub.2, 20 to 50 wt % of BN, and not more than 30 wt % of AlN is disclosed. This heat-resistive electrode material is used in at least portions of electrodes of an apparatus having a plasma generating unit, e.g., an ion source, a plasma etching apparatus, or a plasma CVD apparatus, that contacts a plasma.

Abstract: The present invention relates to a probe needle wherein a conductive film is formed over a first insulating film formed around the outer periphery of a rod-like member through which a signal current flows, a second insulating film is formed over the outer periphery of the conductive film, and the conductive film is grounded. Since the rod-like member through which a signal current flows is thereby shielded, it is not affected by noise, and mutual crosstalk between signal currents is also prevented. Moreover, since ill effects caused by mutual contact with other probe needles is prevented by the second insulating film, reliable and stable measurement is possible.

Abstract: The present invention relates to a probe needle wherein a conductive film is formed over a first insulating film formed around the outer periphery of a rod-like member through which a signal current flows, a second insulating film is formed over the outer periphery of the conductive film, and the conductive film is grounded. Since the rod-like member through which a signal current flows is thereby shielded, it is not affected by noise, and mutual crosstalk between signal currents is also prevented. Moreover, since ill effects caused by mutual contact with other probe needles is prevented by the second insulating film, reliable and stable measurement is possible.

Abstract: A plasma processing apparatus includes a filament mounted in an electron generation chamber for producing plasma of a discharge gas, thereby generating electrons. The electrons are supplied from the electron generation chamber into an ion generation chamber through electron passage hole between both chambers to produce plasma of a processing gas inside the ion generation chamber. The chambers are formed of conductive ceramics to constitute electrodes.

Abstract: An ion generator comprises an electron-generating chamber and an ion-generating chamber. Ions are generated by introducing a raw material gas into the ion-generating chamber and irradiating the raw material gas with electrodes generated in the electron-generating chamber. The ions, thus generated, are drawn by ion-collecting electrodes and guided out of the ion-generating chamber through a slit formed in the ion output section of the ion-generating chamber. That corner of the ion-generating chamber which faces the ion-collecting electrodes is curved, and that outer wall of the ion-generating chamber which faces the ion-collecting electrodes is specular. With this structure, an undesirable spark discharge does not easily take place with reference to the ion-collecting electrodes, so that damage to the structural components of the ion generator is suppressed. Further, the ion output section is removable from the main body of the ion-generating chamber.

Abstract: An ion implantation equipment for implanting ion beam into an implanting target characterized in that an electrons are induced to the direction of an ion beam being injected to said implanting target, and a predetermined bias voltage is applied between a plasma generation chamber and Faraday.

Abstract: An electron generating apparatus for an ion source for example, which is capable of prolonging service life and facilitating the exchange of its filament has been proposed. The electron generating apparatus includes an electron generating chamber having a discharging gas supply hole and electron extracting hole, a pair of conductive filament support members mounted in the chamber through an insulating plate, and a filament detachably fixed on the filament support members. At least one of the filament support members is provided with an overhang to cover at least part of a region between the lower ends of the filament.

Abstract: An electron beam excitation ion source comprises a housing having an ion generation chamber therein. A discharge gas and an accelerated electrons are introduced into the ion generation chamber, causing the accelerated electrons to collide against the discharge gas to generate a plasma containing ions in the ion generation chamber. The housing includes an ion extraction port through which the ions are extracted from the ion generation chamber outside the housing and an electron reflecting member exposed in the ion generation chamber to reflect the electrons.