Patents by Inventor Masahiko Nakamizo
Masahiko Nakamizo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240145516Abstract: There is provided an imaging device capable of suppressing a decrease in quantum efficiency, and an electronic device using the imaging device. An imaging device of the present disclosure includes: a pixel array unit arranged in a matrix in units of a pixel group including a plurality of pixels that performs photoelectric conversion; a pixel transistor provided corresponding to each pixel group and including a plurality of transistors; and a circuit that controls a threshold voltage of at least one transistor of the plurality of transistors.Type: ApplicationFiled: February 24, 2022Publication date: May 2, 2024Inventor: MASAHIKO NAKAMIZO
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Patent number: 11901391Abstract: An imaging device of an embodiment has a first substrate, a second substrate, a wire, and a trench. The first substrate has a pixel having a photodiode and a floating diffusion that holds a charge converted by the photodiode. The second substrate has a pixel circuit that reads a pixel signal based on the charge held in the floating diffusion in the pixel, and is stacked on the first substrate. The wire penetrates the first substrate and the second substrate in a stacking direction, and electrically connects the floating diffusion in the first substrate to an amplification transistor in the pixel circuit of the second substrate. The trench is formed at least in the second substrate, runs in parallel with the wire, and has a depth equal to or greater than the thickness of a semiconductor layer in the second substrate.Type: GrantFiled: June 26, 2020Date of Patent: February 13, 2024Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Takeyoshi Komoto, Masahiko Nakamizo, Toshiaki Ono, Tomonori Yamashita
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Publication number: 20240038810Abstract: A sensor includes a first substrate including at least a first pixel. The first pixel includes an avalanche photodiode to convert incident light into electric charge and includes an anode and a cathode. The cathode is in a well region of the first substrate. The first pixel includes an isolation region that isolates the well region from at least a second pixel that is adjacent to the first pixel. The first pixel includes a hole accumulation region between the isolation region and the well region. The hole accumulation region is electrically connected to the anode.Type: ApplicationFiled: October 10, 2023Publication date: February 1, 2024Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Yusuke OTAKE, Akira MATSUMOTO, Junpei YAMAMOTO, Ryusei NAITO, Masahiko NAKAMIZO, Toshifumi WAKANO
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Publication number: 20230411416Abstract: A solid-state imaging element of a pixel sharing type with improved driving of transistors is disclosed. A first electric charge accumulating section and a second electric charge accumulating section are arranged in a predetermined direction. A first transfer section transfers electric charge from first photoelectric conversion elements to the first electric charge accumulating section, causing it to accumulate the electric charge. A second transfer section transfers electric charge from second photoelectric conversion elements to the second electric charge accumulating section, causing it to accumulate the electric charge. A first transistor is configured to output a signal corresponding to an amount of the electric charge accumulated in each of the first electric charge accumulating section and the second electric charge accumulating section. A second transistor is arranged with the first transistor in the predetermined direction and connected in parallel to the first transistor.Type: ApplicationFiled: July 20, 2023Publication date: December 21, 2023Inventors: Kazuhiko Nakadate, Toshifumi Wakano, Masahiko Nakamizo
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Publication number: 20230353905Abstract: A solid-state imaging element and an electronic device are provided. A pixel at least includes a photoelectric conversion unit that performs photoelectric conversion, an FD unit to which charge generated in the photoelectric conversion unit is transferred, and an amplification transistor that has a gate electrode to which the FD unit is connected. A reference signal is input to a MOS transistor. The reference signal is referred to when AD conversion is performed on a pixel signal according to an amount of light received by the pixel. Then, a shared structure is employed in which a predetermined number of pixels share an AD converter that includes a differential pair including the MOS transistor and the amplification transistor. Each of the pixels is provided with a selection transistor that is used to select a pixel for which AD conversion is performed on the pixel signal.Type: ApplicationFiled: July 11, 2023Publication date: November 2, 2023Inventors: KENICHI OBATA, MASAHIKO NAKAMIZO
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Patent number: 11756971Abstract: A solid-state imaging element of a pixel sharing type with improved driving of transistors is disclosed. A first electric charge accumulating section and a second electric charge accumulating section are arranged in a predetermined direction. A first transfer section transfers electric charge from first photoelectric conversion elements to the first electric charge accumulating section, causing it to accumulate the electric charge. A second transfer section transfers electric charge from second photoelectric conversion elements to the second electric charge accumulating section, causing it to accumulate the electric charge. A first transistor is configured to output a signal corresponding to an amount of the electric charge accumulated in each of the first electric charge accumulating section and the second electric charge accumulating section. A second transistor is arranged with the first transistor in the predetermined direction and connected in parallel to the first transistor.Type: GrantFiled: December 22, 2022Date of Patent: September 12, 2023Assignee: Sony Semiconductor Solutions CorporationInventors: Kazuhiko Nakadate, Toshifumi Wakano, Masahiko Nakamizo
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Patent number: 11743619Abstract: A solid-state imaging element and an electronic device are provided. A pixel at least includes a photoelectric conversion unit that performs photoelectric conversion, an FD unit to which charge generated in the photoelectric conversion unit is transferred, and an amplification transistor that has a gate electrode to which the FD unit is connected. A reference signal is input to a MOS transistor. The reference signal is referred to when AD conversion is performed on a pixel signal according to an amount of light received by the pixel. Then, a shared structure is employed in which a predetermined number of pixels share an AD converter that includes a differential pair including the MOS transistor and the amplification transistor. Each of the pixels is provided with a selection transistor that is used to select a pixel for which AD conversion is performed on the pixel signal.Type: GrantFiled: September 8, 2022Date of Patent: August 29, 2023Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Kenichi Obata, Masahiko Nakamizo
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Publication number: 20230232125Abstract: An imaging apparatus including: a first imaging element and a second imaging element, in which each of the first and second imaging elements includes: a plurality of pixels in a semiconductor substrate; a pixel separation wall; and a color filter above a light receiving surface of the semiconductor substrate that transmits light having a wavelength that is different between the first imaging element and the second imaging element, the pixel separation wall included in the first imaging element has a slit at a center of the first imaging element where the imaging apparatus is viewed from a side of the light receiving surface, and the pixel separation wall included in the second imaging element does not have a slit at a center of the second imaging element where the imaging apparatus is viewed from a side of the light receiving surface.Type: ApplicationFiled: March 16, 2021Publication date: July 20, 2023Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventor: Masahiko NAKAMIZO
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Publication number: 20230136655Abstract: A solid-state imaging element of a pixel sharing type with improved driving of transistors is disclosed. A first electric charge accumulating section and a second electric charge accumulating section are arranged in a predetermined direction. A first transfer section transfers electric charge from first photoelectric conversion elements to the first electric charge accumulating section, causing it to accumulate the electric charge. A second transfer section transfers electric charge from second photoelectric conversion elements to the second electric charge accumulating section, causing it to accumulate the electric charge. A first transistor is configured to output a signal corresponding to an amount of the electric charge accumulated in each of the first electric charge accumulating section and the second electric charge accumulating section. A second transistor is arranged with the first transistor in the predetermined direction and connected in parallel to the first transistor.Type: ApplicationFiled: December 22, 2022Publication date: May 4, 2023Inventors: Kazuhiko Nakadate, Toshifumi Wakano, Masahiko Nakamizo
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Patent number: 11552114Abstract: A solid-state imaging element of a pixel sharing type with improved driving of transistors is disclosed. A first electric charge accumulating section and a second electric charge accumulating section are arranged in a predetermined direction. A first transfer section transfers electric charge from first photoelectric conversion elements to the first electric charge accumulating section, causing it to accumulate the electric charge. A second transfer section transfers electric charge from second photoelectric conversion elements to the second electric charge accumulating section, causing it to accumulate the electric charge. A first transistor is configured to output a signal corresponding to an amount of the electric charge accumulated in each of the first electric charge accumulating section and the second electric charge accumulating section. A second transistor is arranged with the first transistor in the predetermined direction and connected in parallel to the first transistor.Type: GrantFiled: May 14, 2021Date of Patent: January 10, 2023Assignee: Sony Semiconductor Solutions CorporationInventors: Kazuhiko Nakadate, Toshifumi Wakano, Masahiko Nakamizo
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Publication number: 20230007209Abstract: A solid-state imaging element and an electronic device are provided. A pixel at least includes a photoelectric conversion unit that performs photoelectric conversion, an FD unit to which charge generated in the photoelectric conversion unit is transferred, and an amplification transistor that has a gate electrode to which the FD unit is connected. A reference signal is input to a MOS transistor. The reference signal is referred to when AD conversion is performed on a pixel signal according to an amount of light received by the pixel. Then, a shared structure is employed in which a predetermined number of pixels share an AD converter that includes a differential pair including the MOS transistor and the amplification transistor. Each of the pixels is provided with a selection transistor that is used to select a pixel for which AD conversion is performed on the pixel signal.Type: ApplicationFiled: September 8, 2022Publication date: January 5, 2023Inventors: KENICHI OBATA, MASAHIKO NAKAMIZO
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Publication number: 20220367555Abstract: An imaging device of an embodiment has a first substrate, a second substrate, a wire, and a trench. The first substrate has a pixel having a photodiode and a floating diffusion that holds a charge converted by the photodiode. The second substrate has a pixel circuit that reads a pixel signal based on the charge held in the floating diffusion in the pixel, and is stacked on the first substrate. The wire penetrates the first substrate and the second substrate in a stacking direction, and electrically connects the floating diffusion in the first substrate to an amplification transistor in the pixel circuit of the second substrate. The trench is formed at least in the second substrate, runs in parallel with the wire, and has a depth equal to or greater than the thickness of a semiconductor layer in the second substrate.Type: ApplicationFiled: June 26, 2020Publication date: November 17, 2022Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Takeyoshi KOMOTO, Masahiko NAKAMIZO, Toshiaki ONO, Tomonori YAMASHITA
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Publication number: 20220321816Abstract: An imaging device includes a first substrate, a second substrate, a third substrate, and a switching unit. The first substrate has a pixel including a photodiode and floating diffusion that holds the charge converted by the photodiode. The second substrate has a pixel circuit that reads out a pixel signal based on the charge held in the floating diffusion in the pixel, and is stacked on the first substrate. The third substrate has a processing circuit that detects a pixel signal read out by the pixel circuit, and is stacked on the second substrate. The switching unit is provided to enable electrical connection between the floating diffusion and a floating diffusion of another pixel in the first substrate, and is provided on the second substrate. As a result, by switching the capacitance of the floating diffusion of the pixel using floating diffusion of another pixel, it is possible to switch the charge-voltage conversion efficiency levels.Type: ApplicationFiled: June 22, 2020Publication date: October 6, 2022Inventors: SOICHI OCHIAI, TAKEYOSHI KOMOTO, MASAHIKO NAKAMIZO
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Patent number: 11463645Abstract: A solid-state imaging element and an electronic device is provided. A pixel at least includes a photoelectric conversion unit that performs photoelectric conversion, an FD unit to which charge generated in the photoelectric conversion unit is transferred, and an amplification transistor that has a gate electrode to which the FD unit is connected. A reference signal is input to a MOS transistor. The reference signal is referred to when AD conversion is performed on a pixel signal according to an amount of light received by the pixel. Then, a shared structure is employed in which a predetermined number of pixels share an AD converter that includes a differential pair including the MOS transistor and the amplification transistor. Each of the pixels is provided with a selection transistor that is used to select a pixel for which AD conversion is performed on the pixel signal.Type: GrantFiled: November 16, 2018Date of Patent: October 4, 2022Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Kenichi Obata, Masahiko Nakamizo
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Publication number: 20220020789Abstract: A sensor includes a first substrate including at least a first pixel. The first pixel includes an avalanche photodiode to convert incident light into electric charge and includes an anode and a cathode. The cathode is in a well region of the first substrate. The first pixel includes an isolation region that isolates the well region from at least a second pixel that is adjacent to the first pixel. The first pixel includes a hole accumulation region between the isolation region and the well region. The hole accumulation region is electrically connected to the anode.Type: ApplicationFiled: September 30, 2021Publication date: January 20, 2022Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Yusuke OTAKE, Akira MATSUMOTO, Junpei YAMAMOTO, Ryusei NAITO, Masahiko NAKAMIZO, Toshifumi WAKANO
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Publication number: 20210272992Abstract: A solid-state imaging element of a pixel sharing type with improved driving of transistors is disclosed. A first electric charge accumulating section and a second electric charge accumulating section are arranged in a predetermined direction. A first transfer section transfers electric charge from first photoelectric conversion elements to the first electric charge accumulating section, causing it to accumulate the electric charge. A second transfer section transfers electric charge from second photoelectric conversion elements to the second electric charge accumulating section, causing it to accumulate the electric charge. A first transistor is configured to output a signal corresponding to an amount of the electric charge accumulated in each of the first electric charge accumulating section and the second electric charge accumulating section. A second transistor is arranged with the first transistor in the predetermined direction and connected in parallel to the first transistor.Type: ApplicationFiled: May 14, 2021Publication date: September 2, 2021Inventors: Kazuhiko Nakadate, Toshifumi Wakano, Masahiko Nakamizo
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Patent number: 11031421Abstract: A solid-state imaging element of a pixel sharing type with improved driving of transistors is disclosed. A first electric charge accumulating section and a second electric charge accumulating section are arranged in a predetermined direction. A first transfer section transfers electric charge from first photoelectric conversion elements to the first electric charge accumulating section, causing it to accumulate the electric charge. A second transfer section transfers electric charge from second photoelectric conversion elements to the second electric charge accumulating section, causing it to accumulate the electric charge. A first transistor is configured to output a signal corresponding to an amount of the electric charge accumulated in each of the first electric charge accumulating section and the second electric charge accumulating section. A second transistor is arranged with the first transistor in the predetermined direction and connected in parallel to the first transistor.Type: GrantFiled: February 23, 2018Date of Patent: June 8, 2021Assignee: Sony Semiconductor Solutions CorporationInventors: Kazuhiko Nakadate, Toshifumi Wakano, Masahiko Nakamizo
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Patent number: 10893224Abstract: The present technology relates to an imaging element and an electronic device that enable pixels to flexibly share a charge voltage converting unit. The imaging element includes a pixel array unit in which pixels respectively having charge voltage converting units and switches are arranged, and the charge voltage converting units of the plurality of pixels are connected to a signal line in parallel via the respective switches. The present technology is applied to, for example, a Complementary Metal Oxide Semiconductor (CMOS) image sensor in which pixels share a charge voltage converting unit.Type: GrantFiled: February 14, 2017Date of Patent: January 12, 2021Assignee: SONY CORPORATIONInventors: Yuu Kajiwara, Masahiko Nakamizo
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Publication number: 20200404211Abstract: The present disclosure relates to a solid-state imaging element and an electronic device that enable performance to be further improved. A pixel at least includes: a photoelectric conversion unit configured to perform photoelectric conversion; an FD unit to which charge generated in the photoelectric conversion unit is transferred; and an amplification transistor that has a gate electrode to which the FD unit is connected. A reference signal is input to a MOS transistor. The reference signal is referred to when AD conversion is performed on a pixel signal according to an amount of light received by the pixel. Then, a shared structure is employed in which a predetermined number of pixels share an AD converter that includes a differential pair including the MOS transistor and the amplification transistor. Each of the pixels is provided with a selection transistor that is used to select a pixel for which AD conversion is performed on the pixel signal.Type: ApplicationFiled: November 16, 2018Publication date: December 24, 2020Inventors: KENICHI OBATA, MASAHIKO NAKAMIZO
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Patent number: 10804309Abstract: A sensor includes a first substrate including at least a first pixel. The first pixel includes an avalanche photodiode to convert incident light into electric charge and includes an anode and a cathode. The cathode is in a well region of the first substrate. The first pixel includes an isolation region that isolates the well region from at least a second pixel that is adjacent to the first pixel. The first pixel includes a hole accumulation region between the isolation region and the well region. The hole accumulation region is electrically connected to the anode.Type: GrantFiled: November 25, 2019Date of Patent: October 13, 2020Assignee: Sony Semiconductor Solutions CorporationInventors: Yusuke Otake, Akira Matsumoto, Junpei Yamamoto, Ryusei Naito, Masahiko Nakamizo, Toshifumi Wakano