Abstract: A charged beam processing apparatus for processing an object to form structures on the object includes a processing chamber, a multi-charged beam optical system configured to generate a plurality of charged beams, and to converge and to deflect the plurality of charged beams to irradiate the object in the processing chamber with the plurality of charged beams, and a supply port configured to supply a gas into the processing chamber. The multi-charged beam optical system includes (i) a lens array, and (ii) a pattern forming plate configured to select a portion of the lens array to be used to form the structures. The charged beam processing apparatus includes a controller configured to control an exchange of the pattern forming plate in accordance with an arrangement pattern of the structures to be formed on the object.

Abstract: An X-ray imaging apparatus includes a multi X-ray generating unit in which multiple X-ray foci are disposed in two-dimensional form at a predetermined pitch in a first direction, and a slit unit having multiple slit members each disposed opposite to its respective X-ray focus. Each slit member has multiple slits arranged in the first direction, and each of the slits forms a slice-formed X-ray beam whose lengthwise direction is a second direction that is different from the first direction. The two-dimensional detection unit detects the X-ray intensity of the formed X-ray beams at the detection surface. The X-ray imaging apparatus executes X-ray imaging at multiple positions while moving the multi X-ray generating unit and the slit unit in the first direction by the amount of the predetermined pitch, while keeping the relative positional relationship therebetween, and reconstructs an X-ray image based on the obtained X-ray intensity.

Abstract: A multi X-ray generating apparatus which has a plurality of electron sources arranged two-dimensionally and targets arranged at positions opposite to the electron sources includes a multi electron source which includes a plurality of electron sources and outputs electrons from driven electron sources by selectively driving a plurality of electron sources in accordance with supplied driving signals, and a target unit which includes a plurality of targets which generate X-rays in accordance with irradiation of electrons output from the multi electron source and outputs X-rays with different radiation qualities in accordance with the generation locations of X-rays. The generation locations and radiation qualities of X-rays from the target unit are controlled by selectively driving the electron sources of the multi electron source.

Abstract: A photonic crystal structure is provided the optical characteristics of which vary periodically in at least one direction, wherein the base material of the photonic crystal structure is formed of a dielectric material, a region containing at least one of molecules, atoms and ions different from the constituent element of the base material is provided in the base material, and the region is arranged in the base material so that the density of one of the molecules, atoms and ions varies periodically in the one direction.

Abstract: A process for producing a three-dimensional photonic crystal comprises the steps of providing a base material having first and second faces adjoining together at a first angle; forming a first mask on the first face; forming fine holes in the base material by dry-etching on the first face in a direction at a second angle to the first face; forming a second mask on the second face; and forming fine holes in the base material by dry-etching on the second face in a direction at a third angle to the second face; the first mask and the second mask, being formed by implantation of ions by a focused ion beam onto the surface layer of the mask formation face of the base material.

Abstract: A method for fabricating a three-dimensional photonic crystal comprises the steps of: forming a dielectric thin film; injecting ions selectively into the dielectric thin film by using a focus ion beam to form a mask on the dielectric thin film; forming a pattern by selectively removing an exposed part of the dielectric thin film at which the mask is not formed on the dielectric thin film; forming a sacrificial layer on the dielectric thin film having the pattern formed therein; and flattening the sacrificial layer formed on the dielectric thin film until the pattern comes to the surface.

Abstract: A method for forming an etching mask comprises the steps of: irradiating focus ion beam to a surface of a substrate and forming an etching mask used for oblique etching including an ion containing portion in the irradiated region. A method for fabricating a three-dimensional structure comprises the steps of: preparing a substrate; irradiating focus ion beam to a surface of the substrate and forming an etching mask including an ion containing portion in the irradiated region; and dry-etching the substrate from a diagonal direction using the etching mask and forming a plurality of holes.

Abstract: A charged beam processing apparatus including a multi charged beam optical system which converges a plurality of charged beams by a lens and deflects the plurality of charged beams by a deflector to irradiate an object to be processed in a processing chamber, and a supply unit which supplies a gas into the processing chamber, includes a gas controller which controls the gas to be supplied into the processing chamber based on a processing condition, and a beam controller which controls the plurality of charged beams based on the processing condition, wherein at least one of material deposition on the surface of the object and etching of the surface of the object forms a structure.

Abstract: A process for forming a three-dimensional photonic crystal comprises the steps of providing a base material having a first face and a second face adjoining to each other at a first angle, forming a first mask on the first face, dry-etching the first face in a direction at a second angle to the first face to remove a portion of the base material not protected by the first mask, forming a second mask on the second face, and dry-etching the second face in a direction at a third angle to the second face to remove a portion of the base material not protected by the second mask.

Abstract: An electron gun includes a cathode portion which emits electrons, an anode portion which accelerates the emission electrons, a bias portion which is arranged between the cathode portion and the anode portion and controls trajectories of the emission electrons, a shielding portion which is arranged below the anode portion and shields some of the emission electrons, and a cooling portion which cools the shielding portion. The bias portion controls the trajectories of the electrons so as to form a crossover between the bias portion and the anode portion, and prevents the electrons from emitting on the anode portion.

Abstract: This invention provides a multielectron gun which generates a plurality of electron beams having uniform characteristics. A multielectron gun (2) is formed of a plurality of electron guns (2a-2c). The electron gun (2a) has, in addition to an electron source (21a), Wehnelt electrode (22a), and anode electrode (23), a shield electrode (24) between the Wehnelt electrode (22a) and anode electrode (23). The shield electrode reduces field interference among the electron guns.

Abstract: An electron gun includes a cathode portion (1) which emits electrons, an anode portion (3) which accelerates the emission electrons, a bias portion (2) which is arranged between the cathode portion and anode portion and controls trajectories of the emission electrons, a shielding portion (12) which is arranged below the anode portion and shields some of the emission electrons, and a cooling portion (14) which cools the shielding portion.

Abstract: A charged-particle beam drawing data creation method of supplying bit information created from design pattern data in the scanning direction of a charged-particle beam, ON/OFF-controlling the charged-particle beam to irradiate a sample surface, and exposing a two-dimensional pattern by scanning the charged-particle beam includes the step of extracting a cell pattern as one unit of a periodic structure from design pattern data having a periodic structure, and registering the cell pattern, the step of creating arrangement data to be rearranged in a basic drawing region defined by a charged-particle beam exposure apparatus using the cell pattern, and registering the arrangement data, and the step of cutting out data from the cell pattern in accordance with information of the arrangement data, and creating data of the basic drawing region.

Abstract: This invention provides a multielectron gun which generates a plurality of electron beams having uniform characteristics. A multielectron gun (2) is formed of a plurality of electron guns (2a-2c). The electron gun (2a) has, in addition to an electron source (21a), Wehnelt electrode (22a), and anode electrode (23), a shield electrode (24) between the Wehnelt electrode (22a) and anode electrode (23). The shield electrode reduces field interference among the electron guns.

Abstract: An electron gun, having an electron source, a Wehnelt electrode, and acceleration electrodes, includes a control device for changing a field distribution formed by a first acceleration electrode of the acceleration electrodes to control characteristics of a final cross-over formed, by electrons from a first cross-over, at the final stage of the electric gun. The first cross-over is performed when the electrons emitted from the electron source are focused by the field distribution formed by the electron source, the Wehnelt electrode, and a second acceleration electrode of the acceleration electrodes.

Abstract: Each of a plurality of electrostatic lens has inner walls of a plurality of lens apertures, which are formed by an electrode laid out around each beam axis, and high-resistance portions which are bonded to the electrode and are laid out on two sides of the electrode in the beam axis direction, and a low-resistance portion which is bonded to the high-resistance portions on a side opposite to the electrode in the beam axis direction.

Abstract: An electron emission device comprises an electron emission electrode with a pointed end and a counter electrode positioned opposite to the pointed end, both formed by fine working of a conductive layer laminated on an insulating substrate.

Abstract: The electron emission surface of an electron source is formed to have an effective irradiation area and a restricted irradiation area the electron emission efficiencies of which differ from each other. In an electron beam exposure method, the effective irradiation area is an effective electron emission area that take part in exposure, and the restricted irradiation area is an area which does not participate directly in exposure and which emits an electron beam that, if it were not restricted, would be screened by aperture electrodes in an electron gun or illumination column.

Abstract: An electron emission device comprises an electron emission electrode with a pointed end and a counter electrode positioned opposite to the pointed end, both formed by fine working of a conductive layer laminated on an insulating substrate.

Abstract: The electron emission surface of an electron source is formed to have an effective irradiation area and a restricted irradiation area the electron emission efficiencies of which differ from each other. In an electron beam exposure method, the effective irradiation area is an effective electron emission area that take part in exposure, and the restricted irradiation area is an area which does not participate directly in exposure and which emits an electron beam that, if it were not restricted, would be screened by aperture electrodes in an electron gun or illumination column.