Abstract: A method of manufacturing a fluorescent-material-containing member includes: providing a fluorescent member including a fluorescent material, the fluorescent member having a first main surface side including a plurality of projections; disposing a powder of a light-reflective member between the projections of the fluorescent member; obtaining a sintered body by sintering the powder of the light-reflective member, and removing part of the sintered body from at least one of a first main surface side and a second main surface side of the fluorescent member to obtain the fluorescent-material-containing member including a first surface arranged on the first main surface side has and defined by the fluorescent member and the light-reflective member, and a second surface arranged on the second main surface side has and defined by the fluorescent member and the light-reflective member or defined solely by the fluorescent member.

Abstract: A semiconductor light emitting device including a substrate, an electrode and a light emitting region is provided. The substrate may have protruding portions formed in a repeating pattern on substantially an entire surface of the substrate while the rest of the surface may be substantially flat. The cross sections of the protruding portions taken along planes orthogonal to the surface of the substrate may be semi-circular in shape. The cross sections of the protruding portions may in alternative be convex in shape. A buffer layer and a GaN layer may be formed on the substrate.

Abstract: A light emitting device includes a substrate, a plurality of LEDs arranged in rows and columns above the substrate, and a wavelength converting member above the plurality of LEDs. The wavelength converting member includes a plurality of fluorescent portions arranged in rows and columns and a lattice-shaped light shielding portion between the plurality of fluorescent portions. One or more row-direction spacing regions are located directly below a corresponding one of the rows of the fluorescent portions, and one or more column-direction spacing regions are located directly below a corresponding one of the columns of the fluorescent portions. One or more row-direction light-shielding regions of the light-shielding portion are respectively located directly above a corresponding one of the rows of the LEDs, and one or more column-direction light-shielding regions of the light-shielding portion are respectively located directly above a corresponding one of the columns of the LEDs.

Abstract: A light-emitting device includes a light-emitting element, a phosphor layer, a reflective film, and a light-transmissive member. The light emitting element emits first light. The phosphor layer is provided on a light-emitting surface of the light-emitting element, and contains a phosphor being excited by the first light to emit second light with a wavelength longer than a wavelength of the first light. The reflective film is provided on the phosphor layer, reflects the first light, and transmits the second light. The light-transmissive member is in contact with the reflective film.

Abstract: An optical component includes a phosphor member, an optical filter arranged over the phosphor member at a light extraction side of the phosphor member, and a light scattering member arranged on over the optical filter. An excitation spectrum of the phosphor member has a first local maximum wavelength in the visible region and a second local maximum wavelength in the ultraviolet region. The optical filter is configured to reflect a portion of light at the first local maximum wavelength and a portion or all of light at the second local maximum wavelength.

Abstract: A nitride semiconductor element includes a sapphire substrate including: a main surface extending in a c-plane of the sapphire substrate, and a plurality of projections disposed at the main surface, the plurality of projections including at least one projection having an elongated shape in a plan view; and a nitride semiconductor layer disposed on the main surface of the sapphire substrate. The at least one projection has an outer edge extending in a longitudinal direction of the elongated shape, the outer edge extending in a direction oriented at an angle in a range of ?10° to +10° with respect to an a-plane of the sapphire substrate in the plan view.

Abstract: A fluorescent member includes: a plurality of fluorescent particles; an inorganic binder; and a plurality of pores. An upper surface of the fluorescent member is a light extraction surface of the fluorescent member. The plurality of pores are localized in a vicinity of at least one of the plurality of fluorescent particles in a cross section that is parallel to the upper surface of the fluorescent member and extends through the fluorescent particles and the pores.

Abstract: A light emitting device includes a laser light, a wavelength conversion member, a base member and a lid. The wavelength conversion member includes a plurality of projected portions each extending along a first direction on an upper surface side thereof and arranged side by side in a second direction. Each of the plurality of projected portions has a first surface extending along the first direction. The first surface is inclined with respect to a reference surface. The laser light source and the wavelength conversion member are arranged so that an optical axis of first light from the laser light source extends along the second direction when viewed from above and is inclined with respect to the reference surface, and light directly incident to the first surface along a direction parallel to the optical axis of the first light is regularly reflected toward an upward direction.

Abstract: A light emitting device can further improve light extraction efficiency. A method of manufacturing such a light emitting device can also prove advantageous. The light emitting device includes a light emitting element, a light-transmissive member which is disposed on a light extracting surface side of the light emitting element, and a reflecting layer disposed on an element bonding surface of the light transmissive member where the light emitting element is disposed and adjacent to the light emitting element. The light-transmissive member, in a plan view, has a planar dimension greater than the light extracting surface of the light emitting element.

Abstract: A semiconductor light emitting device including a substrate, an electrode and a light emitting region is provided. The substrate may have protruding portions formed in a repeating pattern on substantially an entire surface of the substrate while the rest of the surface may be substantially flat. The cross sections of the protruding portions taken along planes orthogonal to the surface of the substrate may be semi-circular in shape. The cross sections of the protruding portions may in alternative be convex in shape. A buffer layer and a GaN layer may be formed on the substrate.

Abstract: A phosphor-containing member includes a base portion made of a diffuse reflective ceramic, and a plurality of phosphor portions each containing a phosphor and made of a ceramic. The plurality of phosphor portions are disposed directly on an upper surface of the base portion and are spaced apart from each other. A light emitting device includes the phosphor-containing member and a light source that is spaced apart from the phosphor-containing member and configured to irradiate light for exciting the phosphors on an upper surface of each of the phosphor portions.

Abstract: A phosphor-containing member includes a base portion made of a diffuse reflective ceramic, and a plurality of phosphor portions each containing a phosphor and made of a ceramic. The plurality of phosphor portions are disposed directly on an upper surface of the base portion and are spaced apart from each other. A light emitting device includes the phosphor-containing member and a light source that is spaced apart from the phosphor-containing member and configured to irradiate light for exciting the phosphors on an upper surface of each of the phosphor portions.

Abstract: A light emitting device can further improve light extraction efficiency. A method of manufacturing such a light emitting device can also prove advantageous. The light emitting device includes a light emitting element, a light-transmissive member which is disposed on a light extracting surface side of the light emitting element, and a reflecting layer disposed on an element bonding surface of the light transmissive member where the light emitting element is disposed and adjacent to the light emitting element. The light-transmissive member, in a plan view, has a planar dimension greater than the light extracting surface of the light emitting element.

Abstract: A light emitting apparatus includes a mount substrate; two or more light emitting devices mounted on the mount substrate such that adjacent light emitting devices face each other at lateral surfaces thereof; a light transparent member positioned on upper surfaces of the light emitting devices, the light transparent member having a plate shape and being positioned to receive incident light emitted from the light emitting devices; and a covering member. In a plan view, the light transparent member is larger than each of the light emitting devices. The covering member contains a light reflective material and covers at least a lateral surface of the light transparent member.

Abstract: A light emitting device includes a substrate, a plurality of LEDs arranged in rows and columns above the substrate, and a wavelength converting member above the plurality of LEDs. The wavelength converting member includes a plurality of fluorescent portions arranged in rows and columns and a lattice-shaped light shielding portion between the plurality of fluorescent portions. One or more row-direction spacing regions are located directly below a corresponding one of the rows of the fluorescent portions, and one or more column-direction spacing regions are located directly below a corresponding one of the columns of the fluorescent portions. One or more row-direction light-shielding regions of the light-shielding portion are respectively located directly above a corresponding one of the rows of the LEDs, and one or more column-direction light-shielding regions of the light-shielding portion are respectively located directly above a corresponding one of the columns of the LEDs.

Abstract: A nitride semiconductor element includes a sapphire substrate including: a main surface extending in a c-plane of the sapphire substrate, and a plurality of projections disposed at the main surface, the plurality of projections including at least one projection having an elongated shape in a plan view; and a nitride semiconductor layer disposed on the main surface of the sapphire substrate. The at least one projection has an outer edge extending in a longitudinal direction of the elongated shape, the outer edge extending in a direction oriented at an angle in a range of ?10° to +10° with respect to an a-plane of the sapphire substrate in the plan view.

Abstract: A light-emitting device includes a light-emitting element, a phosphor layer, a reflective film, and a light-transmissive member. The light emitting element emits first light. The phosphor layer is provided on a light-emitting surface of the light-emitting element, and contains a phosphor being excited by the first light to emit second light with a wavelength longer than a wavelength of the first light. The reflective film is provided on the phosphor layer, reflects the contact with the reflective film.

Abstract: A semiconductor light emitting device including a substrate, an electrode and a light emitting region is provided. The substrate may have protruding portions formed in a repeating pattern on substantially an entire surface of the substrate while the rest of the surface may be substantially flat. The cross sections of the protruding portions taken along planes orthogonal to the surface of the substrate may be semi-circular in shape. The cross sections of the protruding portions may in alternative be convex in shape. A buffer layer and a GaN layer may be formed on the substrate.

Abstract: A light emitting apparatus includes at least one light emitting device; a light transparent member that receives incident light emitted from the light emitting device; and a covering member. The light transparent member is a light conversion member that has an externally exposed light emission surface and a side surface contiguous to the light emission surface. The covering member contains a light reflective material, and covers at least the side surface of said light transparent member. A content of said light reflective material is not less than 30 wt %.

Abstract: A light emitting device includes a laser light, a wavelength conversion member, a base member and a lid. The wavelength conversion member includes a plurality of projected portions each extending along a first direction on an upper surface side thereof and arranged side by side in a second direction. Each of the plurality of projected portions has a first surface extending along the first direction. The first surface is inclined with respect to a reference surface. The laser light source and the wavelength conversion member are arranged so that an optical axis of first light from the laser light source extends along the second direction when viewed from above and is inclined with respect to the reference surface, and light directly incident to the first surface along a direction parallel to the optical axis of the first light is regularly reflected toward an upward direction.