Abstract: In order to maintain excellent electrical, optical and photoconductive characteristics and to significantly improve the durability under adverse environments, a light receiving member for electrophotography according to the present invention comprises in sequence: a supporting member and a light receiving layer; said light receiving layer comprising in sequence at least a photoconductive layer and a surface layer thereon, said photoconductive layer comprising a non-single-crystal material containing silicon atoms as a matrix, and said surface layer comprising an amorphous material containing silicon atoms and carbon atoms as a matrix, wherein the carbon atoms are at least diamond-bonded and graphite-bonded, and wherein from 2% to 30% by number of the carbon atoms are graphite-bonded.

Abstract: An ink jet head having a plurality of electrothermal transducer elements in one liquid passage is arranged so that the ratio of the areas of two of the plurality of electrothermal transducer elements is smaller than the ratio of the amounts of ink ejected by the two electrothermal transducer elements, thereby stably obtaining the desired amounts of ejected ink and achieving a high gradational effect at a high energy efficiency.

Abstract: Disclosed herein is an ink-jet recording process which comprises using at least color inks of yellow, magenta and cyan colors and a black ink, and ejecting out the inks on a recording material to record a color image on the recording material, wherein the color inks contain a penetrability-imparting surfactant and/or a penetrable solvent, and the black ink contains a pigment as a coloring material. An ink set and an instrument for use in such a process are also disclosed.

Abstract: A method for producing a substrate for an ink jet recording head comprises preparing a substrate with plural heat generating resistors for applying heat to the ink, plural wirings electrically connected thereto, and plural heat generating areas formed by the heat generating resistors exposed from the wirings, coating the heat generating resistors and the wirings on the substrate with a first insulating protective film, removing the first insulating protective film by wet etching in portions on the heat generating areas, and coating thus etched first insulating protective film with a second insulating protective film, wherein the etched portion of the first insulating protective film, in the longitudinal direction of the heat generating area, is positioned inside from the end of the heat generating area, by at least 1/2 of the thickness of the first and second insulating protective films covering the wirings.

Abstract: Provided is an ink composition suitable for an ink jet system, which comprises a pigment or a dye, an aqueous medium, a water soluble resin having an oxazolyl group or a fine particle having an oxazolyl group adsorbed on its outer surface and a compound having at least one carbonyl group wherein the composition has a viscosity of not more than 15 cp at 25.degree. C.

Abstract: A non-monocrystalline silicon semiconductor device having a pin junction is formed by forming a first doped semiconductor layer of a first conductivity disposed on a substrate. A first intrinsic layer is deposited on the first doped semiconductor layer employing RF energy. A second intrinsic layer is deposited on the first intrinsic layer employing microwave energy and RF energy simultaneously. A semiconductor precursor gas, including germanium and a semiconductor precursor gas including silicon are supplied to the second intrinsic layer during its formation. The content of the semiconductor precursor gas containing germanium is greater than the semiconductor gas including silicon in the layer thickness direction in the second intrinsic layer at a P-layer side. A second doped semiconductor layer is deposited on the second intrinsic layer.

Abstract: An object of the present invention is to provide a photoelectrical conversion device in which recombination of carriers excited by light is prevented and the open voltage and the carrier range of positive holes are improved and to provide a generating system using the photoelectrical conversion device. The photoelectrical conversion device includes a p-layer, an i-layer, and an n-layer, wherein the photoelectrical conversion device being formed by stacking the p-layer, the i-layer and the n-layer each of which is made of non-single-crystal silicon semiconductor, the i-layer contains germanium atoms, the band gap of the i-layer is smoothly changed in a direction of the thickness of the i-layer, the minimum value of the band gap is positioned adjacent to the p-layer from the central position of the i-layer and both of a valence control agent to serve as a donor and another valence control agent to serve as an acceptor are doped into the i-layer.

Abstract: A method of quickly depositing a non-single-crystal semiconductor film and forming a silicon-type non-single-crystal photovoltaic device, and a method of continuously manufacturing the photovoltaic devices. By this method the deposited film is formed by decomposing a raw material gas with microwave energy which is lower than the microwave energy required to completely decompose the raw material gas. RF energy is applied at the same time which is higher in energy than the microwave energy. The microwave energy acts on the raw material gas at an internal pressure level of 50 mTorr or lower to form a uniform non-single-crystal semiconductor film with excellent electrical characteristics and reduced light deterioration.

Abstract: Provided is an ink comprising a compound having at least one carbonyl group and a hydrazide compound selected from the group consisting of a styrene-maleic acid resin having at least two hydrazide groups, a polyacrylic acid having at least two hydrazide groups and a compound represented by the formula ##STR1## wherein R represents (CH.sub.2).sub.n or C.sub.6 H.sub.

Abstract: Disclosed herein is an ink comprising a coloring material and a liquid medium dissolving the coloring material therein, wherein the ink comprises a dye having at least one ammonium ion as a counter ion and an ammonium salt of an inorganic or organic acid.

Abstract: The present invention provides a photovoltaic element in which the open-circuit voltage and the path length of holes are improved by preventing the recombination of photoexcited carriers.The p-i-n junction type photovoltaic element is composed of a p-type layer, an i-type layer of a laminated structure consisting of an i-type layer formed by RF plasma CVD on the p-type layer side and an i-type layer formed by microwave (.mu.W) CVD on the n-type layer side, or an i-type layer formed by microwave (.mu.W) plasma CVD on the p-type layer side and an i-type layer formed by RF plasma CVD on the n-type layer side, characterized in that the i-type layer formed by .mu.W plasma CVD is formed by a process in which a lower .mu.W energy and a higher RF energy than the .mu.

Abstract: A method of quickly depositing a non-single-crystal semiconductor film and forming a silicon-type non-single-crystal photovoltaic device, and a method of continuously manufacturing the photovoltaic devices. By this method the deposited film is formed by decomposing a raw material gas with microwave energy which is lower than the microwave energy required to completely decompose the raw material gas. RF energy is applied at the same time which is higher in energy than the microwave energy. The microwave energy acts on the raw material gas at an internal pressure level of 50 mTorr or lower to form a uniform non-single-crystal semiconductor film with excellent electrical characteristics and reduced light deterioration.