Abstract: Provided is a solid-state imaging unit that includes a stacked structure including a sensor substrate and a circuit board. The sensor board has an effective pixel region where an imaging device is disposed. The imaging device includes a plurality of pixels and is configured to receive external light in each of the pixels to generate a pixel signal. The circuit board includes a chip including a first portion and a second portion that are integrated with each other. The first portion includes a signal processing circuit that performs signal processing of the pixel signal. The second portion is disposed at a position different from a position of the first portion in an in-plane direction. Here, both the first portion and the second portion are disposed to overlap the effective pixel region in a stacking direction of the sensor board and the circuit board.

Abstract: To suppress image quality degradation. A solid-state imaging device according to an embodiment includes: a semiconductor substrate (131) including a light receiving element in a first region on a first surface; a glass substrate (133) facing the first surface of the semiconductor substrate; a resin layer (132) that supports the glass substrate against the first surface; and a layer (134) provided in the glass substrate, the layer being provided in a third region corresponding to a second region surrounding the first region of the semiconductor substrate in a substrate thickness direction of the semiconductor substrate, the layer having a physical property with respect to visible light different from a physical property of the glass substrate.

Abstract: An imaging unit that makes it possible to ensure high dimensional accuracy is provided. This solid-state imaging unit includes a stacked structure including a sensor substrate and a circuit board. The sensor board has an effective pixel region where an imaging device is disposed. The imaging device includes a plurality of pixels and is configured to receive external light in each of the pixels to generate a pixel signal. The circuit board includes a chip including a first portion and a second portion that are integrated with each other. The first portion includes a signal processing circuit that performs signal processing of the pixel signal. The second portion is disposed at a position different from a position of the first portion in an in-plane direction. Here, both the first portion and the second portion are disposed to overlap the effective pixel region in a stacking direction of the sensor board and the circuit board.

Abstract: A solid-state image pickup device including a circuit board with an opening, a solid-state image pickup element including a light-receiving surface, a sensor package which accommodates the light-receiving surface and the solid-state image pickup element, and an optical unit including a lens. The solid-state image pickup element, the sensor package, and the optical unit are mounted to the circuit board. In the solid-state image pickup device, the sensor package and the optical unit are disposed so that there is provided an optical path that allows light incident upon the lens to pass the opening and to reach the light-receiving surface at a surface side. By mounting the component parts onto both surfaces, the area of the circuit board can be effectively used, and the size of the solid-state image pickup device in the horizontal direction of the circuit board can be reduced. The optical unit is mounted to the circuit board.

Abstract: A semiconductor chip is bonded on a radiator plate consisting of copper material with interposition of a bonding layer having a total thickness of 80 &mgr;m comprising a laminated structure including a thermoplastic film bonding layer 12a having a thickness of 50 &mgr;m and a paste-based bonding layer 12b having a thickness of 30 &mgr;m. For example, butadiene-modified polyolefin-based adhesive resin mixed with alumina fine power is used as material of the thermoplastic film bonding layer 12a, and, for example, silicone rubber-modified epoxy-based adhesive resin mixed with silver powder is used as material of the paste-based bonding layer 12b. There is thus provided a semiconductor device having a semiconductor chip bonded on a radiator plate with interposition of a bonding layer, wherein stress concentration caused in the bonding layer is relaxed and heat dissipation performance is maintained and thus the reliability in endurance is high, and a method for manufacturing the semiconductor device.

Abstract: A semiconductor chip is bonded on a radiator plate consisting of copper material with interposition of a bonding layer having a total thickness of 80 &mgr;m comprising a laminated structure including a thermoplastic film bonding layer 12a having a thickness of 50 &mgr;m and a paste-based bonding layer 12b having a thickness of 30 &mgr;m. For example, butadiene-modified polyolefin-based adhesive resin mixed with alumina fine power is used as material of the thermoplastic film bonding layer 12a, and, for example, silicone rubber-modified epoxy-based adhesive resin mixed with silver powder is used as material of the paste-based bonding layer 12b. There is thus provided a semiconductor device having a semiconductor chip bonded on a radiator plate with interposition of a bonding layer, wherein stress concentration caused in the bonding layer is relaxed and heat dissipation performance is maintained and thus the reliability in endurance is high, and a method for manufacturing the semiconductor device.

Abstract: A semiconductor chip is bonded on a radiator plate consisting of copper material with interposition of a bonding layer having a total thickness of 80 &mgr;m comprising a laminated structure including a thermoplastic film bonding layer 12a having a thickness of 50 &mgr;m and a paste-based bonding layer 12b having a thickness of 30 &mgr;m. For example, butadiene-modified polyolefin-based adhesive resin mixed with alumina fine power is used as material of the thermoplastic film bonding layer 12a, and, for example, silicone rubber-modified epoxy-based adhesive resin mixed with silver powder is used as material of the paste-based bonding layer 12b. There is thus provided a semiconductor device having a semiconductor chip bonded on a radiator plate with interposition of a bonding layer, wherein stress concentration caused in the bonding layer is relaxed and heat dissipation performance is maintained and thus the reliability in endurance is high, and a method for manufacturing the semiconductor device.

Abstract: A positive photosensitive polyimide resin composition which comprises 100 parts by weight of an organic solvent-soluble polyimide resin and 1-100 parts by weight of an .omicron.-quinonediazide compound, said polyimide resin being composed of the repeating units represented by formulas [I] and [II] below ##STR1## (where R.sub.1 is a divalent organic group to constitute a diamine which has one or more groups of at least one kind selected from the group consisting of phenolic hydroxyl group, carboxyl group, thiophenol group, and sulfonic group; R.sub.3 is a divalent organic group having no phenolic hydroxyl group, carboxyl group, thiophenol group, and sulfonic group; and R.sub.2 and R.sub.4 each are a tetravalent organic group constituting a-tetracarboxylic acid and a derivative thereof when R.sub.1 has one or more groups of at least one kind selected from the group consisting of carboxyl group and sulfonic group and has no phenolic hydroxyl group and thiophenol group, or R.sub.2 and R.sub.

Abstract: A polyimide resin having a repeating unit of the formula: ##STR1## wherein R.sub.1 is a tetravalent organic group constituting a tetracarboxylic acid or its derivative, wherein four atoms directly bonded to the four carbonyl groups are carbon atoms having no unsaturated bond, and R.sub.2 is a bivalent organic group constituting a diamine.

Abstract: A polyimide resin having a repeating unit of the formula: ##STR1## wherein R.sub.1 is a tetravalent organic group constituting a tetracarboxylic acid or its derivative, wherein four atoms directly bonded to the four carbonyl groups are carbon atoms having no unsaturated bond, and R.sub.2 is a bivalent organic group constituting a diamine.