Abstract: A liquid crystal display device includes an image signal processing section configured to control a liquid crystal panel and a backlight unit in a liquid crystal display device based on an image signal and detect that an image displayed on the liquid crystal panel is changed to a whole-area black display image based on the image signal. The liquid crystal display device further includes a backlight unit control section that generates a dimming signal Sdv in response to detection by the image signal processing section and supplies the dimming signal sdv to the backlight unit. The dimming signal Sdv lowers luminescence brightness Lca of the backlight unit to be substantially zero in a gradual manner.

Abstract: A first controller, and a second controller coupled to the first controller via a first path are provided. The first controller includes a first relay circuit which is a circuit that controls data transfer, and a first processor coupled to the first relay circuit via a first second path. The second controller includes a second relay circuit which is a circuit that controls data transfer, and is coupled to the first relay circuit via the first path, and a second processor coupled to the second relay circuit via a second second path. The first processor is coupled to the second relay circuit not via the first relay circuit but via a first third path, and accesses the second relay circuit via the first third path during an I/O process. The second processor is coupled to the first relay circuit not via the second relay circuit but via a second third path, and accesses the first relay circuit via the second third path during an I/O process.

Abstract: In a control device for an internal combustion engine includes an intake valve, a variable valve mechanism capable of controlling a closing timing and an operating angle of the intake valve continuously and variably, a detection unit for detecting a possibility of pre-ignition, and a throttle for controlling an intake air amount such that when the possibility of pre-ignition is detected, the intake valve closing timing is retarded from bottom dead center by increasing the intake valve operating angle, the control device includes, an operating angle upper limit limiting value calculation unit that calculates an operating angle upper limit limiting value for limiting an upper limit value of the intake valve operating angle, and a throttle opening upper limit limiting value calculation unit that calculates a throttle opening upper limit limiting value for limiting an upper limit value of a throttle opening on the basis of the intake valve operating angle.

Abstract: A lighting device (8), which is provided with a cold cathode fluorescent tube (light source) (9) and a chassis (8a) that houses the cold cathode fluorescent tube (9), includes an inverter circuit (16) that includes a transformer (16a) to be connected to the cold cathode fluorescent tube (9) and drives the cold cathode fluorescent tube (9). The inverter circuit (16) drives the cold cathode fluorescent tube (9) using a frequency higher than a predetermined fundamental frequency during a predetermined period within a period in which the cold cathode fluorescent tube (9) is lit.

Abstract: A light emitting device includes a semiconductor multilayer structure having a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and an active layer. A reflecting layer is provided at a side of one surface of the semiconductor multilayer structure and reflects a light emitted from the active layer. A supporting substrate of Si or Ge is provided at an opposite side of the reflecting layer with respect to the side of the semiconductor multilayer structure and supports the semiconductor multilayer structure via a metal bonding layer. A back surface electrode is provided at an opposite side of the supporting substrate with respect to a side of the metal bonding layer and includes Au alloyed with the support substrate. A hardness of the back surface electrode is higher than a hardness of the Au.

Abstract: Provided is an inverter circuit capable of suppressing an increase in EMI level. In at least one embodiment, the inverter circuit includes: a drive circuit for outputting a pulse signal; a transformer for outputting a drive signal corresponding to the pulse signal to a fluorescent lamp, the transformer including a secondary winding having one end connected to the fluorescent lamp; a detection control circuit for detecting a detection signal corresponding to the drive signal supplied to the fluorescent lamp; a wiring line connecting another end of the secondary winding of the transformer and the detection control circuit; and a wiring line provided together with the wiring line so that magnetic fields generated are cancelled out each other.

Abstract: A light-emitting diode has: a substrate; a light-emitting layer having a first conductivity type cladding layer, an active layer, and a second conductivity type cladding layer stacked sequentially on a front side of the substrate; a first current-blocking portion partially formed in the middle on the light-emitting layer; a current-conducting portion formed on the second conductivity type cladding layer and the first current-blocking portion; a lower electrode formed on the back side of the substrate, a light-reflecting layer formed between the substrate and the light-emitting layer; a partial electrode formed on the surface of the light-reflecting layer and in a portion positioned below the first current-blocking portion; and a second current-blocking portion formed over the surface of the light-reflecting layer excluding the portion in which is formed the partial electrode.

Abstract: A lighting device (8) including a cold-cathode fluorescent tube (light source) (9) includes an inverter circuit (16) connected to the cold-cathode fluorescent tube (9) and configured so as to driving the cold-cathode fluorescent tube (9), using PWM dimming. The inverter circuit (16) drives the cold-cathode fluorescent tube (9) while a dimming signal in the PWM dimming and a driving signal for driving the cold-cathode fluorescent tube (9) are synchronized.

Abstract: A light emitting element includes a semiconductor laminated structure including a first semiconductor layer of first conductivity type, a second semiconductor layer of second conductivity type different from the first conductivity type, and an active layer sandwiched between the first semiconductor layer and the second semiconductor layer, a surface electrode including a center electrode disposed on one surface of the semiconductor laminated structure and a thin wire electrode extending from a periphery of the center electrode, and a contact part disposed on a part of another surface of the semiconductor laminated structure extruding a part located directly below the surface electrode, in parallel along the thin wire electrode, and including a plurality of first regions forming the shortest current pathway between the thin wire electrode and a second region allowing the plural first regions to be connected.

Abstract: Data transfer is performed to and from a host computer using a first block as the minimum unit. Data transfer is performed to and from a storage area using a second block as the minimum unit. A second block set of the storage area stores data obtained from performing data conversion processes that change the size of the data itself, with a first block set as the unit. Here a correspondence relationship is generated between the first block set and the second block set. In response to a read request from the host computer, a second block set, which corresponds to the first block set that includes the first block that is requested, is read, a reverse-conversion process is performed, and the data is sent to the host computer.

Abstract: A lighting device for a display device includes a light source and a light source control device arranged to control the light source. The light source control device is arranged to generate a pulse signal as a light source control signal Vcon to control the light source. The light source control signal Vcon includes pulses, which individually have different shapes.

Abstract: A lighting device for a display device includes a light source and a chassis arranged to cover the light source. The chassis includes one of a groove section and an opening section located directly below the light source. The one of a groove section and an opening section has a relatively small width at an area directly below a low voltage area of the light source, compared to at an area directly below a high voltage area of the light source.

Abstract: A light-emitting diode has: a substrate; a light-emitting layer having a first conductivity type cladding layer, an active layer, and a second conductivity type cladding layer stacked sequentially on a front side of the substrate; a first current-blocking portion partially formed in the middle on the light-emitting layer; a current-conducting portion formed on the second conductivity type cladding layer and the first current-blocking portion; a lower electrode formed on the back side of the substrate, a light-reflecting layer formed between the substrate and the light-emitting layer; a partial electrode formed on the surface of the light-reflecting layer and in a portion positioned below the first current-blocking portion; and a second current-blocking portion formed over the surface of the light-reflecting layer excluding the portion in which is formed the partial electrode.

Abstract: A lighting device for a display device includes a light source and a chassis arranged to cover the light source. The light source includes a high voltage area to be subjected to relatively high voltage, and a low voltage area to be subjected to relatively low voltage. The chassis includes a distance providing mechanism arranged to provide a vertical distance between the chassis and the light source, so that the vertical distance is relatively large at the high voltage area of the light source and relatively small at the low voltage area of the light source.

Abstract: An upper electrode is formed on one surface of a semiconductor multilayer structure including a light emitting layer. An interface electrode is formed at a region of another surface of the semiconductor multilayer structure except a region right under the upper electrode. A center of the interface electrode coincides with a center of the upper electrode. At least a part of the interface electrode has a similar shape to a shape of an outer periphery of the upper electrode. A current blocking layer is formed at another region of another surface of the semiconductor multilayer structure except the region where the interface electrode is formed. A reflecting layer for reflecting a part of the light emitted from the light emitting layer is electrically connected to the interface electrode. A conductive supporting substrate is electrically connected to the semiconductor multilayer structure.

Abstract: A plurality of semiconductor layers including an active layer 6 and a light extract layer 4, and a reflective metal film 11 are formed in a semiconductor light emitting device. The light extract layer 4 is formed of a plurality of layers 23, 24 having different composition ratios. An irregularity 22 is formed on the layers 23, 24 including an outermost layer to provide a main surface S as a rough-surface.

Abstract: A light-emitting element includes a semiconductor laminated structure including a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type different from the first conductivity type and an active layer sandwiched by the first and second semiconductor layers, a first electrode on one surface side of the semiconductor laminated structure, a conductive reflective layer on an other surface side of the semiconductor laminated structure for reflecting light emitted from the active layer, a contact portion partially formed between the semiconductor laminated structure and the conductive reflective layer and being in ohmic contact with the semiconductor laminated structure, and a second electrode on a part of a surface of the conductive reflective layer on the semiconductor laminated structure without contacting the semiconductor laminated structure for feeding current to the contact portion.

Abstract: An AlGaInP based light emitting diode is provided with a distributed Bragg reflector comprising a combination of an AlGaAs layer and an AlInP layer, each having a film thickness determined by following formulas (1) to (3): t1={?0/(4×n1)}×???(1), t2={?0/(4×n2)}×(2??)??(2), and 0.5<?<0.9??(3) wherein t1 is a film thickness [nm] of the AlGaAs layer, t2 is a film thickness [nm] of the AlInP layer, ?0 is a wavelength [nm] of a light to be reflected, n1 is a refractive index of the AlGaAs layer to the wavelength of the light to be reflected, and n2 is a refractive index of the AlInP layer to the wavelength of the light to be reflected.

Abstract: A light emitting device includes a semiconductor multilayer structure having a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and an active layer. A reflecting layer is provided at a side of one surface of the semiconductor multilayer structure and reflects a light emitted from the active layer. A supporting substrate of Si or Ge is provided at an opposite side of the reflecting layer with respect to the side of the semiconductor multilayer structure and supports the semiconductor multilayer structure via a metal bonding layer. A back surface electrode is provided at an opposite side of the supporting substrate with respect to a side of the metal bonding layer and includes Au alloyed with the support substrate. A hardness of the back surface electrode is higher than a hardness of the Au.

Abstract: A light emitting device includes a semiconductor multilayer structure having a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and an active layer. A reflecting layer is provided at one surface of the semiconductor multilayer structure and reflects a light emitted from the active layer. A supporting substrate is provided at an opposite side of the reflecting layer with respect to a side of the semiconductor multilayer structure and supports the semiconductor multilayer structure via a metal bonding layer. An adhesion layer is provided at a surface of the supporting substrate at an opposite side with respect to a side of the metal bonding layer. A back surface electrode of an alloy contacts with a surface of the adhesion layer at an opposite side with respect to a surface contacting to the supporting substrate.