Patents by Inventor Masahiro Fujiwara
Masahiro Fujiwara has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20150148500Abstract: An acrylic acid-based polymer composition of the present invention is obtained using a hypophosphorous acid compound in an amount of 0.5 to 4.5 parts by mass based on 100 parts by mass of a total of monomers for forming structural units of the acrylic acid-based polymer and adding 1% to 50% by mass of a total amount of the hypophosphorous acid compound to a reactor before supplying the monomer. The phosphorous acid ion is contained in an amount of 20 to 1,000 ppm by mass based on a solid content of the acrylic acid-based polymer.Type: ApplicationFiled: July 22, 2013Publication date: May 28, 2015Applicant: TOAGOSEI CO., LTD.Inventor: Masahiro Fujiwara
-
Publication number: 20150135558Abstract: A shoe sole including: an outsole having a tread surface to be in contact with a road surface; and a midsole arranged on the outsole, wherein: the midsole is exposed in a central section of a rear foot section and an arch section; in the central section and a lateral side section of the rear foot section of the shoe sole, a diagonal groove is formed extending in a diagonal front-rear direction in the rear foot section to an outer edge of a lateral side of the rear foot section; an angle ?, formed between a virtual center line of the diagonal groove and a longitudinal axis connecting between a center of a heel and a middle point between a big-toe ball and a little-toe ball, is set in a range of 12° to 35°; and a virtual intersection point between the longitudinal axis and the center line is set within a range of 21% to 43% of a full length of the longitudinal axis of the shoe sole from a posterior end of the shoe sole, the diagonal groove extending to a point anterior and medial to the intersection point.Type: ApplicationFiled: May 10, 2012Publication date: May 21, 2015Applicant: ASICS CORPORATIONInventors: Takashi Inomata, Tsuyoshi Nishiwaki, Masahiro Fujiwara, Yoshiyasu Ando
-
Patent number: 9034996Abstract: The present invention relates to a production method for efficiently obtaining an acrylic acid-based polymer having a narrow molecular mass distribution and a low molecular mass, without using a large amount of chain transfer agent. A method for continuously producing an acrylic acid-based polymer obtained by continuously polymerizing a monomer having acrylic acid as an essential component, characterized in that a liquid feed pump applies a mechanical load of 0.5 to 2.5 kJ/L to the liquid discharged from the outlet of a reactor. An acrylic acid-based polymer having fewer high-molecular-mass components, excellent dispersion and other properties, and a low molecular mass is thereby obtained.Type: GrantFiled: October 29, 2012Date of Patent: May 19, 2015Assignee: TOAGOSEI CO., LTD.Inventor: Masahiro Fujiwara
-
Patent number: 8848126Abstract: Provided is an optical sensor having such a novel structure that even if an intrinsic semiconductor region has a short substantial length in a direction parallel with a forward direction of a photodiode, a light receiving area can be ensured, whereby light detection sensitivity can be improved; and a liquid crystal panel including the optical sensor. The optical sensor includes: a photodiode (26) provided with a semiconductor film (28) having a p-type semiconductor region (28p), an intrinsic semiconductor region (28i), and an n-type semiconductor region (28n); a first gate line (38a) formed above the intrinsic semiconductor region (28i), a negative voltage being applied to the first gate line; and a second gate line (38b) formed above the intrinsic semiconductor region (28i), a positive voltage being applied to the second gate line, wherein a predetermined clearance is formed between the first gate line (38a) and the second gate line (38b), above the intrinsic semiconductor region (28i).Type: GrantFiled: September 29, 2011Date of Patent: September 30, 2014Assignee: Sharp Kabushiki KaishaInventors: Norihisa Takaiwa, Masahiro Fujiwara
-
Publication number: 20140256872Abstract: The present invention relates to a production method for efficiently obtaining an acrylic acid-based polymer having a narrow molecular mass distribution and a low molecular mass, without using a large amount of chain transfer agent. A method for continuously producing an acrylic acid-based polymer obtained by continuously polymerizing a monomer having acrylic acid as an essential component, characterized in that a liquid feed pump applies a mechanical load of 0.5 to 2.5 kJ/L to the liquid discharged from the outlet of a reactor. An acrylic acid-based polymer having fewer high-molecular-mass components, excellent dispersion and other properties, and a low molecular mass is thereby obtained.Type: ApplicationFiled: October 29, 2012Publication date: September 11, 2014Applicant: TOAGOSEI CO., LTD.Inventor: Masahiro Fujiwara
-
Patent number: 8803151Abstract: A semiconductor device (100) includes: a first thin film transistor (105) of a first conductivity type formed on a substrate for each pixel; and a plurality of photosensor sections (200). Each photosensor section (200) includes a photodetecting portion including a thin film diode (202), a capacitor (206) for storing a photocurrent occurring in the thin film diode (202), and a second thin film transistor (204) of the first conductivity type, the photodetecting portion being connected to the capacitor (206) via the second thin film transistor (204); the first and second thin film transistors (105, 204) and the thin film diode (202) have semiconductor layers made of the same semiconductor film; and a characteristic of the first thin film transistor (105) and a characteristic of the second thin film transistor (204) are different.Type: GrantFiled: April 15, 2011Date of Patent: August 12, 2014Assignee: Sharp Kabushiki KaishaInventors: Nami Okajima, Masahiro Fujiwara
-
Patent number: 8772415Abstract: The disclosure provides a hydrogenated straight-chain block copolymer, obtained by selective hydrogenation of a straight-chain block copolymer.Type: GrantFiled: August 7, 2007Date of Patent: July 8, 2014Assignee: Asahi Kasei Chemicals CorporationInventors: Yasuhiro Kusanose, Masahiro Fujiwara, Daisuke Shimizu
-
Patent number: 8752646Abstract: An electric power tool includes: a motor; a housing receiving the motor; a power transmission mechanism configured to transmit a driving force of the motor to rotate a top tool; a snap switch including a swing type lever configured to turn on or off rotation of the motor, the snap switch being received inside the housing; a switch lever configured to move in a direction substantially vertical to a surface of the housing; a push bar configured to move the swing type lever in conjunction with the movement of the switch lever; and an urging unit configured to urge the push bar in a direction in which the switch is turned off.Type: GrantFiled: January 13, 2011Date of Patent: June 17, 2014Assignee: Hitachi Koki Co., Ltd.Inventors: Masahiro Fujiwara, Nobuhiro Hosokawa
-
Patent number: 8686480Abstract: Disclosed is a method for manufacturing a semiconductor device that can improve the performance of a photodiode that is formed on a same substrate as a thin film transistor without greatly deteriorating the productivity of the semiconductor device. On a glass substrate 30, a base layer 31 having a recess 33b on the surface is formed, and on the base layer 31, an amorphous silicon thin film 42 is formed. The amorphous silicon thin film 42 is melted to form a crystalline silicon thin film 43, while moving the molten silicon into the recess 33b. Of the silicon thin film 43, a silicon film 11 that constitutes a portion of a thin film transistor 10 is formed of the silicon thin film 43 in a part other than the recess 33b, while a silicon film 21 that constitutes a portion of a photodiode 20 is formed of the silicon thin film 43 in the recess 33b.Type: GrantFiled: April 6, 2011Date of Patent: April 1, 2014Assignee: Sharp Kabushiki KaishaInventors: Tsuyoshi Itoh, Hiroshi Nakatsuji, Masahiro Fujiwara
-
Patent number: 8592513Abstract: The present invention provides an elastomer composition comprising a mixture (a) of a hydrogenated block copolymer (a-1) and a hydrogenated block copolymer (a-2); a polypropylene resin (b); and a hydrocarbon oil (c). The hydrogenated block copolymer (a-1) has a specific structure, a specified number average molecular weight and a specified block content. The hydrogenated block copolymer (a-2) has a specific structure, a specified number average molecular weight, a specified block content, a specified vinyl bond content before hydrogenation and a specified MFR. The polypropylene resin (b) has a specified MFR. The present invention also provides a storage cover of airbag devices which is made of the elastomer composition.Type: GrantFiled: March 24, 2009Date of Patent: November 26, 2013Assignee: Asahi Kasei Chemicals CorporationInventors: Masahiro Fujiwara, Takahiro Hisasue
-
Publication number: 20130300968Abstract: The present invention provides a substrate for a liquid crystal display panel, the substrate being capable of effectively suppressing the occurrence of crosstalk and flicker without decreasing the aperture ratio. One aspect of the present invention is a substrate for a liquid crystal display panel, provided with: a light-shielding electroconductive member; a thin-film transistor arranged in a layer above the light-shielding electroconductive member; a transparent electrode wiring line arranged in a layer above the thin-film transistor, and a pixel electrode arranged in a layer above the transparent electrode wiring line. The light-shielding electroconductive member is a light-shielding element that covers the channel region of the thin-film transistor and is a wiring line connected to the transparent electrode wiring line, and the transparent electrode wiring line has a portion opposing the pixel electrode, with an insulating film disposed therebetween.Type: ApplicationFiled: January 19, 2012Publication date: November 14, 2013Applicant: SHARP KABUSHIKI KAISHAInventors: Nami Okajima, Masahiro Fujiwara
-
Patent number: 8575713Abstract: A semiconductor device 700 includes a substrate and an optical sensor unit 700 formed on the substrate for sensing light and for generating a sensing signal, the optical sensor unit 700 including a first thin film diode 701A for detection of light in a first wavelength range, a second thin film diode 701B detecting light in a second wavelength range that contains wavelengths longer than the longest wavelength in the first wavelength range. The first thin film diode 701A and the second thin film diode 701B are connected in parallel to each other. The sensing signal is generated based on the output from one of the first thin film diode 701A and the second thin film diode 701B. By this means, the wavelength range that can be detected by the optical sensor unit can be expanded and the sensing sensitivity can be increased.Type: GrantFiled: February 12, 2010Date of Patent: November 5, 2013Assignee: Sharp Kabushiki KaishaInventors: Naoki Makita, Masahiro Fujiwara
-
Publication number: 20130286314Abstract: A liquid crystal panel 11 of the present invention is provided with: an array substrate 20; a common wiring line 31 that is formed on the array substrate 20; a first interlayer insulating layer 39 that is formed on the common wiring line 31 and has a first contact hole 39b; a contact electrode 42 that is formed on the first interlayer insulating layer 39, is connected to the common wiring line 31 through the first contact hole 39b, and has a step section 42b that is raised onto the edge of the first contact hole 39b; a second interlayer insulating layer 40 that is formed on the contact electrode 42 and has a second contact hole 40b over the first contact hole 39b; and an opposite electrode 32 that is formed on the second interlayer insulating layer 40 and is connected to the contact electrode 42 through the second contact hole 40b.Type: ApplicationFiled: December 20, 2011Publication date: October 31, 2013Applicant: SHARP KABUSHIKI KAISHAInventors: Keisuke Yoshida, Yasuyoshi Kaise, Masahiro Fujiwara, Hiroaki Furukawa
-
Publication number: 20130227845Abstract: A saber saw including: a motor; a housing accommodating the motor; a plunger held to be reciprocatable in the housing and to which a blade is mounted at a leading end thereof, and a movement converting part provided between the motor and the plunger and is configured to convert rotation movement of the motor into reciprocating movement of the plunger, wherein a bearing metal is fixed to an outer peripheral surface of the plunger.Type: ApplicationFiled: March 1, 2013Publication date: September 5, 2013Applicant: HITACHI KOKI CO., LTD.Inventor: Masahiro Fujiwara
-
Publication number: 20130186074Abstract: The present invention provides an internal combustion engine includes: a turbocharger arranged in exhaust passage; EGR passage branching off from the exhaust passage downstream of a turbine of the turbocharger and connected to intake passage; a burner device arranged in the exhaust passage between the turbine and the portion where the EGR passage branches off to increase exhaust temperature; a bypass passage branching off from the exhaust passage between the turbine and the burner device and connected to the EGR passage; and a bypass valve to adjust flow rate of exhaust gas passing through bypass passage. When flow rate of the exhaust gas is increased, the bypass valve is open, and part of the exhaust gas is guided to the bypass passage. The flow rate of the exhaust gas to be supplied to the burner device is reduced, and the ignition performance of the burner device is ensured.Type: ApplicationFiled: July 7, 2010Publication date: July 25, 2013Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHAInventors: Chika Kanba, Eiji Hashimoto, Taiichi Mori, Koki Uno, Masahiro Fujiwara, Shunichi Hanada
-
Publication number: 20130099290Abstract: Disclosed is a method for manufacturing a semiconductor device that can improve the performance of a photodiode that is formed on a same substrate as a thin film transistor without greatly deteriorating the productivity of the semiconductor device. On a glass substrate 30, a base layer 31 having a recess 33b on the surface is formed, and on the base layer 31, an amorphous silicon thin film 42 is formed. The amorphous silicon thin film 42 is melted to form a crystalline silicon thin film 43, while moving the molten silicon into the recess 33b. Of the silicon thin film 43, a silicon film 11 that constitutes a portion of a thin film transistor 10 is formed of the silicon thin film 43 in a part other than the recess 33b, while a silicon film 21 that constitutes a portion of a photodiode 20 is formed of the silicon thin film 43 in the recess 33b.Type: ApplicationFiled: April 6, 2011Publication date: April 25, 2013Applicant: SHARP KABUSHIKI KAISHAInventors: Tsuyoshi Itoh, Hiroshi Nakatsuji, Masahiro Fujiwara
-
Patent number: 8415428Abstract: The present invention provides a thermoplastic elastomer composition obtained by dynamically crosslinking, under a melting condition, 100 parts by mass of a block copolymer (I), 1 to 1,000 parts by mass of a polar resin (II), 1 to 500 parts by mass of a modified polymer (III), and 0.01 to 50 parts by mass of a crosslinking agent (IV), wherein the block copolymer (I) comprises at least one polymer block (A) comprising as a main component an alkylene unit, and/or at least one copolymer block (B) comprising as main components an alkylene unit (b-1) and a vinyl aromatic monomer unit (b-2), and comprises at least one unsaturated block (C) comprising as a main component a conjugated diene monomer unit having 5 or more carbon atoms at an end.Type: GrantFiled: February 4, 2009Date of Patent: April 9, 2013Assignee: Asahi Kasei Chemicals CorporationInventors: Daisuke Shimizu, Yasuhiro Kusanose, Yoshifumi Araki, Masahiro Fujiwara
-
Publication number: 20130061585Abstract: An internal combustion engine according to the present invention includes an exhaust treatment apparatus provided in an exhaust passage, and a burner apparatus provided upstream of the exhaust treatment apparatus to increase an exhaust temperature. The burner apparatus includes at least a fuel addition valve that allows fuel to be added into exhaust and ignition means for igniting the fuel added via the fuel addition valve. The fuel addition valve is driven open when fuel is added via the fuel addition valve. The amount of fuel added via the fuel addition valve per unit time is increased beyond a predetermined reference amount when the detected amount of intake air exceeds a predetermined threshold value. The probability of successful ignition by the ignition apparatus is increased, and a flame is prevented from being blown out. Thus, the burner apparatus can demonstrate sufficient ignition performance and sufficient combustion performance.Type: ApplicationFiled: June 28, 2010Publication date: March 14, 2013Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHAInventors: Taiichi Mori, Eiji Hashimoto, Koki Uno, Chika Kanba, Masahiro Fujiwara, Shunichi Hanada
-
Patent number: D734927Type: GrantFiled: March 28, 2013Date of Patent: July 28, 2015Assignee: ASICS CORPORATIONInventors: Yoshiyasu Ando, Masahiro Fujiwara, Takashi Inomata, Hiroaki Nishimura, Satoru Abe
-
Patent number: D734928Type: GrantFiled: March 28, 2013Date of Patent: July 28, 2015Assignee: ASICS CORPORATIONInventors: Yoshiyasu Ando, Takuto Ishii, Hitomi Yamana, Masahiro Fujiwara