Abstract: When there is a job activation request accompanied with variable information in which an execution attribute and an identifier of a job are associated, a job definition in which an execution attribute is described with an arbitrary identifier is referred, and based on the variable information, an identifier within the job definition is replaced with the execution attribute to create a job. Then, the job created in this manner is activated.

Abstract: A honeycomb carrier for an exhaust gas-cleaning catalyst to clean e.g. an exhaust gas of an automobile particularly containing NOx, wherein the material for the honeycomb carrier is an aluminum magnesium titanate sintered product obtained by firing at from 1,000 to 1,700° C. a molded product formed from a raw material mixture comprising 100 parts by mass, as calculated as oxides, of a mixture comprising a Mg-containing compound, an Al-containing compound and a Ti-containing compound in the same metal component ratio as the metal component ratio of Mg, Al and Ti in an aluminum magnesium titanate represented by the empirical formula MgxAl2(1+x)Ti(1+x)O5 (wherein 0?x?1), and from 1 to 10 parts by mass of an alkali feldspar represented by the empirical formula (NayK1?y)AlSi3O8 (wherein 0?y?1).

Abstract: The present invention is a developing treatment apparatus for performing development by supplying a developing solution to a substrate having a front surface coated with a positive resist or a negative resist and then subjected to exposure wherein a movable cup is raised to introduce one of scattering developing solutions for the positive and negative resists into an inner peripheral flow path of a cup and the movable cup is lowered to introduce the other of scattering developing solutions for the positive and negative resists into an outer peripheral flow path of the cup, and the developing solution introduced into the inner peripheral flow path and the developing solution introduced into the outer peripheral flow path are separately drained.

Abstract: To provide an aluminum magnesium titanate crystal structure which can be used stably in variable high temperatures, because of its excellent heat resistance, thermal shock resistance, high thermal decomposition resistance and high mechanical property, and a process for its production. An aluminum magnesium titanate crystal structure, which is a solid solution wherein at least some of Al atoms in the surface layer of aluminum magnesium titanate crystal represented by the empirical formula MgxAl2(1?x)Ti(1+x)O5 (wherein 0.1?x<1) are substituted with Si atoms, and which has a thermal expansion coefficient of from ?6×10?6 (1/K) to 6×10?6 (1/K) in a range of from 50 to 800° C. at a temperature raising rate of 20° C./min, and a remaining ratio of aluminum magnesium titanate of at least 50%, when held in an atmosphere of 1,100° C. for 300 hours.

Abstract: A process for selectively removing caffeine from a caffeine-containing catechin composition, which includes dissolving the caffeine-containing catechin composition in a 9/1 to 1/9 by weight mixed solution of an organic solvent and water, and then bringing the resultant solution into contact with activated carbon alone or with activated carbon and also acid clay or activated clay; and a packaged beverage containing such a decaffeinated composition.

Abstract: An inverter controller controlling an inverter main circuit, the inverter controller including: a PWM signal generating part which generates a PWM signal to control on-off of a plurality of switching elements configuring the inverter main circuit; an operating state detecting part which detects an operating state of a load based on a direct current bus voltage of the inverter main circuit, a motor current which flows between the inverter main circuit and the load and an operation instruction to the load; a gate resistance selecting signal generating part which generates a gate resistance selecting signal corresponding to the operating state of the load; and a gate resistance selecting part which selects gate resistances connected to gate terminals of the switching elements of the inverter main circuit by using the gate resistance selecting signal.

Abstract: To provide an aluminum magnesium titanate crystal structure which can be used stably in variable high temperatures, because of its excellent heat resistance, thermal shock resistance, high thermal decomposition resistance and high mechanical property, and a process for its production. An aluminum magnesium titanate crystal structure, which is a solid solution wherein at least some of Al atoms in the surface layer of aluminum magnesium titanate crystal represented by the empirical formula MgxAl2(1?x)Ti(1+x)O5 (wherein 0.1?x<1) are substituted with Si atoms, and which has a thermal expansion coefficient of from ?6×10?6(1/K) to 6×10?6(1/K) in a range of from 50 to 800° C. at a temperature raising rate of 20° C./min, and a remaining ratio of aluminum magnesium titanate of at least 50%, when held in an atmosphere of 1,100° C. for 300 hours.

Abstract: A switching-element drive circuit that is configured to be applied to a power converter includes: a switching element; and a control unit that controls an operation of the switching element. The control unit includes a drive-voltage control unit that is configured to be capable of changing a switching speed of the switching element based on a power supply current.

Abstract: A first p-type SiGe mixed crystal layer is formed by an epitaxial growth method in a trench, and a second p-type SiGe mixed crystal layer is formed. On the second SiGe mixed crystal layer, a third p-type SiGe mixed crystal layer is formed. The height of an uppermost surface of the first SiGe mixed crystal layer from the bottom of the trench is lower than the depth of the trench with the surface of the silicon substrate being the standard. The height of an uppermost surface of the second SiGe mixed crystal layer from the bottom of the trench is higher than the depth of the trench with the surface of the silicon substrate being the standard. Ge concentrations in the first and third SiGe mixed crystal layers are lower than a Ge concentration in the second SiGe mixed crystal layer.

Abstract: A method includes: etching a silicon substrate except for a silicon substrate portion on which a channel region is to be formed to form first and second trenches respectively at a first side and a second side of the silicon substrate portion; filling the first and second trenches by epitaxially growing a semiconductor layer having etching selectivity against silicon and further a silicon layer; removing the semiconductor layer selectivity by a selective etching process to form voids underneath the silicon layer respectively at the first side and the second side of the substrate portion; burying the voids at least partially with a buried insulation film; forming a gate insulation film and a gate electrode on the silicon substrate portion; and forming a source region in the silicon layer at the first side of the silicon substrate portion and a drain region at the second side of the silicon substrate portion.

Abstract: A semiconductor device in which selectivity in epitaxial growth is improved. There is provided a semiconductor device comprising a gate electrode formed over an Si substrate, which is a semiconductor substrate, with a gate insulating film therebetween and an insulating layer formed over sides of the gate electrode and containing a halogen element. With this semiconductor device, a silicon nitride film which contains the halogen element is formed over the sides of the gate electrode when an SiGe layer is formed over the Si substrate. Therefore, the SiGe layer epitaxial-grows over the Si substrate with high selectivity. As a result, an OFF-state leakage current which flows between, for example, the gate electrode and source/drain regions is suppressed and a manufacturing process suitable for actual mass production is established.

Abstract: Provided is a developing apparatus configured to slim the resist pattern while reducing the number of developing modules. A room temperature developing liquid and a high temperature developing liquid to modify the surface layer of a resist pattern can be supplied from a common nozzle to a substrate disposed on a mount table. Although both developing liquids may be sequentially discharged by switching between the supply line for the room temperature developing liquid and the supply line for the high temperature developing liquid, it is also possible to join these supply lines for supplying the room temperature developing liquid from the former supply line, and then adjust the ratio of the flow rates between both supply lines, and then supply the mixed liquid of the developing liquids as a high temperature developing liquid.

Abstract: A method of manufacturing a semiconductor device which includes forming a gate insulating film and a gate electrode over a semiconductor substrate, forming a first recess in the first semiconductor substrate on both sides of the gate electrode by dry etching, forming a second recess by removing a bottom and sidewalls of the first recess by wet etching, and forming a semiconductor layer in the second recess.

Abstract: A packaged green tea beverage, wherein (A) the packaged green tea beverage contains from 0.08 to 0.5 wt % of non-polymer catechins, (B) a percentage of non-epicatechin body in the non-polymer catechins is from 5 to 25 wt %, (C) a percentage of gallate body in the non-polymer catechins is from 5 to 95 wt %, (D) pH is from 2.5 to 5.1, and (F) the packaged green tea beverage contains from 0.0001 to 20 wt % of at least one sweetener selected from fructose, glucose, sucrose, fructoglucose syrup and glucofructose syrup. A packaged green tea beverage containing non-polymer catechins in high concentration can be provided, which can not only reduce astringency but also provides for adequate sweetness and sourness without impairment of the taste and is suited for long-term storage while containing a sweetener.

Abstract: A method of manufacturing a semiconductor device which includes forming a gate insulating film and a gate electrode over a semiconductor substrate, forming a first recess in the first semiconductor substrate on both sides of the gate electrode by dry etching, forming a second recess by removing a bottom and sidewalls of the first recess by wet etching, and forming a semiconductor layer in the second recess.

Abstract: By containing non-polymer catechins in high concentration, the physiological effects of the catechins are manifested, minerals indispensable to the living body are fortified, and the storage stability of a beverage is improved. A packaged beverage containing: (A) from 0.05 to 0.5% by mass of non-polymer catechins; (B) from 0.0012 to 0.12% by mass of calcium; (C) from 0.00012 to 0.006% by mass of magnesium; (D) from 0.000048 to 0.0024% by mass of zinc; (E) from 0.00004 to 0.002% by mass of iron; and (F) from 0.01 to 20% by mass of a sweetener, wherein a content mass ratio [(B)/(A)] of the calcium (B) to the non-polymer catechins (A) is from 0.001 to 1.0; (J) a percentage of gallate bodies in the non-polymer catechins is from 5 to 55% by mass; and pH is from 2.5 to 5.1.

Abstract: A concentrated beverage composition for reconstitution is reduced in bitterness and astringency, adequate in both sweetness and sourness and improved in storage stability despite the inclusion of a high concentration of non-polymer catechins. The concentrated beverage composition for reconstitution contains (A) from 0.5 to 25.0 wt % of non-polymer catechins, (B) a carbohydrate, and (C) a hydroxycarboxylic acid, and meets the following conditions (D) and (E) as well as at least one condition selected from the following conditions (F1), (F2) and (F3): (D) a content of gallic acid is lower than 0.6 wt %, (E) a percentage of non-epi-forms in the non-polymer catechins is from 5 to 25 wt %, (F1) a Brix degree is from 20 to 70, and when diluted with deionized water to give a non-polymer catechin concentration of 0.13 wt %, a pH is from 2.5 to 6.0, (F2) a solid content is not lower than 70.0 wt %, and when diluted with deionized water to give a non-polymer catechin concentration of 0.13 wt %, a pH is from 2.

Abstract: A first p-type SiGe mixed crystal layer is formed by an epitaxial growth method in a trench, and a second p-type SiGe mixed crystal layer is formed. On the second SiGe mixed crystal layer, a third p-type SiGe mixed crystal layer is formed. The height of an uppermost surface of the first SiGe mixed crystal layer from the bottom of the trench is lower than the depth of the trench with the surface of the silicon substrate being the standard. The height of an uppermost surface of the second SiGe mixed crystal layer from the bottom of the trench is higher than the depth of the trench with the surface of the silicon substrate being the standard. Ge concentrations in the first and third SiGe mixed crystal layers are lower than a Ge concentration in the second SiGe mixed crystal layer.

Abstract: In a storage device of one embodiment, a record acquisition unit acquires each of records stored in a plurality of database devices as a file containing items contained in the record. The items contained in the file includes first information for specifying a record, second information indicating a degree of newness of the record and third information for specifying a database device storing the record. The file has a file name able to be specified based on the first information. A storage unit stores the file. A receiving unit receives the first information contained in any of the records stored in the plurality of database devices. A retrieval unit retrieves from the storage unit a file specified based on the first information received by the receiving unit. A file transmitting unit transmits the file retrieved by the retrieval unit to the server device.

Abstract: A method of manufacturing a semiconductor device, comprising, forming a first gate electrode in a first region of a semiconductor substrate and forming a second gate electrode in a second region of the semiconductor substrate, forming a first sidewall along a lateral wall of the first gate electrode and forming a second sidewall along a lateral wall of the second gate electrode, forming an oxide film to cover the semiconductor substrate, the first gate electrode, the second gate electrode, the first sidewall and the second sidewall, forming a resist above the oxide film to cover the first region, removing the oxide film in the second region by etching the oxide film with the resist serving as a mask, removing the resist, and executing a plasma process by using a gas containing chlorine with respect to the semiconductor substrate and the oxide film in the first region.