Abstract: A metal-ceramic circuit board is characterized by being constituted by bonding on a base plate of aluminum or aluminum alloy at least one of ceramic substrate boards having a conductive metal member for an electronic circuit. A method of manufacturing a metal-ceramic circuit board is characterized by comprising the steps of melting aluminum or aluminum alloy in a vacuum or inert gas atmosphere to form a molten metal, contacting one surface of a ceramic substrate board directly with the molten metal in a vacuum or inert gas atmosphere, cooling the molten metal and the ceramic substrate board to form a base plate of aluminum or aluminum alloy, which is bonded directly on the ceramic substrate board without forming any oxidizing film therebetween and bonding a conductive metal member for an electronic circuit on the ceramic substrate board by using a brazing material. The base plate has a proof stress not higher than 320 (MPa) and a thickness not smaller than 1 mm.

Abstract: A metal-ceramic circuit board is characterized by being constituted by bonding directly on a base plate of aluminum or aluminum alloy at least one of ceramic substrate boards having a conductive metal member of an electronic circuit. The base plate has a proof stress not higher than 320 (MPa) and a thickness not smaller than 1 mm.

Abstract: An insulating substrate board for a semiconductor of the present invention comprises a ceramic substrate board (2) and a metal alloy layer (3) consisting of aluminum formed on one surface portion of the ceramic substrate board (2), wherein the Vickers hardness of the metal alloy layer (3) is not less than 25 and not more than 40. The metal alloy layer (3) includes silicon of not less than 0.2% by weight and not more than 5% by weight. The ceramic substrate board (2) is made of a material selected from a group consisting of alumina. aluminum nitride, and silicon nitride.

Abstract: A metal-ceramic circuit board is characterized by being constituted by bonding on a base plate of aluminum or aluminum alloy at least one of ceramic substrate boards having a conductive metal member for an electronic circuit. A method of manufacturing a metal-ceramic circuit board is characterized by comprising the steps of melting aluminum or aluminum alloy in a vacuum or inert gas atmosphere to form a molten metal, contacting one surface of a ceramic substrate board directly with the molten metal in a vacuum or inert gas atmosphere, cooling the molten metal and the ceramic substrate board to form a base plate of aluminum or aluminum alloy, which is bonded directly on the ceramic substrate board without forming any oxidizing film therebetween and bonding a conductive metal member for an electronic circuit on the ceramic substrate board by using a brazing material. The base plate has a proof stress not higher than 320 (MPa) and a thickness not smaller than 1 mm.

Abstract: A metal-ceramic circuit board is characterized by being constituted by bonding on a base plate of aluminum or aluminum alloy at least one of ceramic substrate boards having a conductive metal member for an electronic circuit. A method of manufacturing a metal-ceramic circuit board is characterized by comprising the steps of melting aluminum or aluminum alloy in a vacuum or inert gas atmosphere to form a molten metal, contacting one surface of a ceramic substrate board directly with the molten metal in a vacuum or inert gas atmosphere, cooling the molten metal and the ceramic substrate board to form a base plate of aluminum or aluminum alloy, which is bonded directly on the ceramic substrate board without forming any oxidizing film therebetween and bonding a conductive metal member for an electronic circuit on the ceramic substrate board by using a brazing material. The base plate has a proof stress not higher than 320 (MPa) and a thickness not smaller than 1 mm.

Abstract: A metal-ceramic circuit board is characterized by being constituted by bonding on a base plate of aluminum or aluminum alloy at least one of ceramic substrate boards having a conductive metal member for an electronic circuit. A method of manufacturing a metal-ceramic circuit board is characterized by comprising the steps of melting aluminum or aluminum alloy in a vacuum or inert gas atmosphere to form a molten metal, contacting one surface of a ceramic substrate board directly with the molten metal in a vacuum or inert gas atmosphere, cooling the molten metal and the ceramic substrate board to form a base plate of aluminum or aluminum alloy, which is bonded directly on the ceramic substrate board without forming any oxidizing film therebetween and bonding a conductive metal member for an electronic circuit on the ceramic substrate board by using a brazing material. The base plate has a proof stress not higher than 320 (MPa) and a thickness not smaller than 1 mm.

Abstract: A metal-ceramic circuit board is characterized by being constituted by bonding on a base plate of aluminum or aluminum alloy at least one of ceramic substrate boards having a conductive metal member for an electronic circuit. A method of manufacturing a metal-ceramic circuit board is characterized by comprising the steps of melting aluminum or aluminum alloy in a vacuum or inert gas atmosphere to form a molten metal, contacting one surface of a ceramic substrate board directly with the molten metal in a vacuum or inert gas atmosphere, cooling the molten metal and the ceramic substrate board to form a base plate of aluminum or aluminum alloy, which is bonded directly on the ceramic substrate board without forming any oxidizing film therebetween and bonding a conductive metal member for an electronic circuit on the ceramic substrate board by using a brazing material. The base plate has a proof stress not higher than 320 (MPa) and a thickness not smaller than 1 mm.

Abstract: An insulating substrate board for a semiconductor of the present invention comprises a ceramic substrate board (2) and a metal alloy layer (3) consisting of aluminum formed on one surface portion of the ceramic substrate board (2), wherein the Vickers hardness of the metal alloy layer (3) is not less than 25 and not more than 40. The metal alloy layer (3) includes silicone of not less than 0.2% by weight and not more than 5% by weight. The ceramic substrate board (2) is made of a material selected from a group consisting of alumina, aluminum nitride, and silicone nitride.

Abstract: A metal-ceramic circuit board is characterized by being constituted by bonding on a base plate of aluminum or aluminum alloy at least one of ceramic substrate boards having a conductive metal member for an electronic circuit. A method of manufacturing a metal-ceramic circuit board is characterized by comprising the steps of melting aluminum or aluminum alloy in a vacuum or inert gas atmosphere to form a molten metal, contacting one surface of a ceramic substrate board directly with the molten metal in a vacuum or inert gas atmosphere, cooling the molten metal and the ceramic substrate board to form a base plate of aluminum or aluminum alloy, which is bonded directly on the ceramic substrate board without forming any oxidizing film therebetween and bonding a conductive metal member for an electronic circuit on the ceramic substrate board by using a brazing material. The base plate has a proof stress not higher than 320 (MPa) and a thickness not smaller than 1 mm.

Abstract: Molten metal is poured into a mold having an inside cross section with varied thicknesses along the direction of the width thereof. The molten metal is allowed to solidify in the mold and the cast strip is withdrawn from the mold either continuously or intermittently. The as-cast strip is rolled at either identical or similar thickness reduction ratios in the direction of width of the strip. This process enables the production of high quality shape strips free from any substantial working deformation in the workpiece.

Abstract: A novel method for directly bonding a copper plate to an alumina substrate is disclosed. Also disclosed is a process by which bonded assembles of copper plate and alumina substrate can be produced in large volumes on an industrial scale in high yield and at low cost employing a simplified sequence of steps. According to this process, a copper plate is positioned in contact with an alumina substrate in an inert atmosphere, and the combination is heated to a temperature lower than the melting point of copper (1,083.degree. C.), preferably to a temperature lower than the eutectic point of copper-copper oxide eutectic, for example, to 1,063.degree. C..+-.0.5.degree. C.