Abstract: A radar system, a radar device, and an interference avoidance method are obtained that can utilize frequency effectively even in three or more radar devices. A radar system includes three or more radar devices and a schedule management controller. Schedule management controller predicts an interference time period that is a time period during which the overlapping scanning/radiation range is generated, determines a first interference avoidance measure that is a measure to cause radar devices to use respective different use frequencies while keeping a restriction on the number of frequency channels, in the predicted interference time period, and determines a second interference avoidance measure to be performed by a radar device that is unable to avoid interference by the first interference avoidance measure.

Abstract: Ion implantation is carried out to form a p-well region and a source region in parts of a high resistance SiC layer on a SiC substrate, and a carbon film is deposited over the substrate. With the carbon film deposited over the substrate, annealing for activating the implanted dopant ions is performed, and then the carbon film is removed. Thus, a smooth surface having hardly any surface roughness caused by the annealing is obtained. Furthermore, if a channel layer is epitaxially grown, the surface roughness of the channel layer is smaller than that of the underlying layer. Since the channel layer having a smooth surface is provided, it is possible to obtain a MISFET with a high current drive capability.

Abstract: A light wave radar apparatus includes a frequency deviation detecting unit 12 for detecting a frequency deviation fchirp of a light signal, and a weighted average processing unit 13 for determining a systematic error ?Voffset from the frequency deviation fchirp detected by the frequency deviation detecting unit 12, and subtracts the systematic error ?Voffset from a wind velocity VW calculated by a Doppler signal processing unit 11. As a result, the light wave radar apparatus can carry out a measurement of the wind velocity VW with a high degree of precision.

Abstract: A measurement system for an aircraft having the three-axis components of the airspeed of the aircraft, the three-axis components of the wind speed currently encountered by the aircraft, and the wind speed distribution ahead of the aircraft simultaneously in real time. It comprises a Doppler anemometer measuring the airflow speeds at a plurality of points separated by a prescribed distance in the beam irradiation direction that changes in a time series, and an inertial data measurement device measuring the movement information and positional information of the aircraft. Moreover, the display system of the aircraft includes the horizontal two-axis airspeed of the aircraft, the three-axis components of the wind speed currently encountered by the aircraft, and information on the wind speed distribution ahead of the aircraft are displayed simultaneously in real time.

Abstract: Ion implantation is carried out to form a p-well region and a source region in parts of a high resistance SiC layer on a SiC substrate, and a carbon film is deposited over the substrate. With the carbon film deposited over the substrate, annealing for activating the implanted dopant ions is performed, and then the carbon film is removed. Thus, a smooth surface having hardly any surface roughness caused by the annealing is obtained. Furthermore, if a channel layer is epitaxially grown, the surface roughness of the channel layer is smaller than that of the underlying layer. Since the channel layer having a smooth surface is provided, it is possible to obtain a MISFET with a high current drive capability.

Abstract: Ion implantation is carried out to form a p-well region and a source region in parts of a high resistance SiC layer on a SiC substrate, and a carbon film is deposited over the substrate. With the carbon film deposited over the substrate, annealing for activating the implanted dopant ions is performed, and then the carbon film is removed. Thus, a smooth surface having hardly any surface roughness caused by the annealing is obtained. Furthermore, if a channel layer is epitaxially grown, the surface roughness of the channel layer is smaller than that of the underlying layer. Since the channel layer having a smooth surface is provided, it is possible to obtain a MISFET with a high current drive capability.

Abstract: In the measurement system for an aircraft according to the present invention, the three-axis components of the airspeed of the aircraft, the three-axis components of the wind speed currently encountered by the aircraft, and the wind speed distribution ahead of the aircraft, are measured simultaneously, by providing a Doppler anemometer which measures the airflow speeds at a plurality of points separated by a prescribed distance in the beam irradiation direction, and an inertial data measurement device which measures the movement information and positional information of the aircraft. Furthermore, in the measurement system for an aircraft according to the present invention, the measurement accuracy of the device is improved by providing means for obtaining information the movement and positional information of the aircraft during measurement, from the inertial data measurement device, and for correcting the measurement values from the Doppler anemometer by means of the information.

Abstract: A light wave radar apparatus includes a frequency deviation detecting unit 12 for detecting a frequency deviation fchirp of a light signal, and a weighted average processing unit 13 for determining a systematic error ?Voffset from the frequency deviation fchirp detected by the frequency deviation detecting unit 12, and subtracts the systematic error ?Voffset from a wind velocity Vw calculated by a Doppler signal processing unit 11. As a result, the light wave radar apparatus can carry out a measurement of the wind velocity Vw with a high degree of precision.

Abstract: Ion implantation is carried out to form a p-well region and a source region in parts of a high resistance SiC layer on a SiC substrate, and a carbon film is deposited over the substrate. With the carbon film deposited over the substrate, annealing for activating the implanted dopant ions is performed, and then the carbon film is removed. Thus, a smooth surface having hardly any surface roughness caused by the annealing is obtained. Furthermore, if a channel layer is epitaxially grown, the surface roughness of the channel layer is smaller than that of the underlying layer. Since the channel layer having a smooth surface is provided, it is possible to obtain a MISFET with a high current drive capability.

Abstract: The present invention relates to an amplifier having high amplification efficiency. Amplification efficiency at low output is improved by reducing current at a latter stage depending on output power at the time when output power is reduced by gain control. In order to accomplish this improvement, gain control voltage applied to a gain control circuit for controlling the gain of a signal-amplifying field-effect transistor in a former stage is also applied simultaneously to a bias voltage control circuit for controlling the voltage between the gate and source of a signal-amplifying field-effect transistor in the latter stage, the voltage between the gate and source of the signal-amplifying field-effect transistor in the latter stage is controlled depending on the gain of the signal-amplifying field-effect transistor in the former stage to control the current between the drain and source of the signal-amplifying field-effect transistor in the latter stage.

Abstract: In an FET, two first semiconductor regions of higher impurity concentration and smaller thickness, for source electrode and drain electrode, are formed in a second semiconductor region of lower impurity concentration and larger thickness for a gate electrode, thereby obtaining a low source resistance and small leak current.

Abstract: A semiconductive device comprising a substrate of a semi-insulative material, a first impurity-doped semiconductive region of an n-conductivity type formed in the substrate, a second impurity-doped semiconductive region of p-conductivity type formed in the substrate. The second region has a generally U-shaped cross-section, one of the vertical limbs of the U adjoining the first region to form a p-n junction therewith and the web portion of the U being located in a position deeper than the bottom of the first region. First and second conductors are deposited on the first and second regions to provide an ohmic contact therewith.