Patents by Inventor Masahiro Kaida

Masahiro Kaida has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device and projection-type display unit
    Patent number: 10241370
    Abstract: A semiconductor device according to an embodiment of the disclosure includes: a first substrate; a TFT element provided on the first substrate with a first interlayer insulating layer interposed therebetween, and including a semiconductor layer and a gate electrode that is provided on the semiconductor layer with a gate insulating layer interposed therebetween; and a second substrate disposed to face the first substrate. The gate electrode includes a first electroconductive film and a second electroconductive film that has a light-shielding property in order from side of the semiconductor layer. The second electroconductive film extends from a side face to a bottom face of each of a pair of openings that are provided to interpose the semiconductor layer.
    Type: Grant
    Filed: October 27, 2016
    Date of Patent: March 26, 2019
    Assignee: Sony Corporation
    Inventors: Kazuki Abe, Shinya Inage, Nobuhiko Oda, Masahiro Kaida, Moriyasu Nagura
  • SEMICONDUCTOR DEVICE AND PROJECTION-TYPE DISPLAY UNIT
    Publication number: 20180329264
    Abstract: A semiconductor device according to an embodiment of the disclosure includes: a first substrate; a TFT element provided on the first substrate with a first interlayer insulating layer interposed therebetween, and including a semiconductor layer and a gate electrode that is provided on the semiconductor layer with a gate insulating layer interposed therebetween; and a second substrate disposed to face the first substrate. The gate electrode includes a first electroconductive film and a second electroconductive film that has a light-shielding property in order from side of the semiconductor layer. The second electroconductive film extends from a side face to a bottom face of each of a pair of openings that are provided to interpose the semiconductor layer.
    Type: Application
    Filed: October 27, 2016
    Publication date: November 15, 2018
    Applicant: Sony Corporation
    Inventors: Kazuki Abe, Shinya Inage, Nobuhiko Oda, Masahiro Kaida, Moriyasu Nagura
  • Etching process, method of manufacturing electronic device, and method of manufacturing polarizing plate
    Patent number: 9316771
    Abstract: An etching process includes: forming a metal film on a substrate having a pattern formation region; forming a mask having a predetermined pattern on the metal film in the pattern formation region, and forming a resist film in part or all of a periphery of the pattern formation region; and dry-etching the metal film in the pattern formation region.
    Type: Grant
    Filed: August 11, 2014
    Date of Patent: April 19, 2016
    Assignee: Sony Corporation
    Inventors: Masahiro Kaida, Yuu Kawaguchi
  • ETCHING PROCESS, METHOD OF MANUFACTURING ELECTRONIC DEVICE, AND METHOD OF MANUFACTURING POLARIZING PLATE
    Publication number: 20150060396
    Abstract: An etching process includes: forming a metal film on a substrate having a pattern formation region; forming a mask having a predetermined pattern on the metal film in the pattern formation region, and forming a resist film in part or all of a periphery of the pattern formation region; and dry-etching the metal film in the pattern formation region.
    Type: Application
    Filed: August 11, 2014
    Publication date: March 5, 2015
    Applicant: Sony Corporation
    Inventors: Masahiro Kaida, Yuu Kawaguchi
  • Liquid crystal display device, method for manufacturing the same, and projection-type liquid crystal display apparatus with liquid crystal display device
    Publication number: 20110109818
    Abstract: A method for manufacturing a liquid crystal display device includes: an active matrix substrate formation step of forming an active matrix substrate, wherein the active matrix substrate formation step includes a first step of forming a microlens array having a plurality of microlenses on a transparent substrate, a second step of forming an oxide film on the microlens array, a third step of forming a TFT array having a plurality of TFT devices above the oxide film, and a fourth step of forming a light-blocking film selectively to define pixel openings.
    Type: Application
    Filed: September 28, 2010
    Publication date: May 12, 2011
    Applicant: Sony Corporation
    Inventors: Naoki Uneda, Yoshihiro Mizuguchi, Moriyasu Nagura, Masahiro Kaida, Shinya A. Inage, Yoshinori Ogino
  • In-situ barc and nitride etch process
    Patent number: 5972796
    Abstract: A method for etching a semiconductor device (10) having BARC layer (22) and nitride layer (20) includes etching BARC layer (22) until reaching a first set point in the fabrication reaction chamber and then etching nitride layer (20) in-situ the fabrication reaction chamber immediately following etching BARC layer (22).
    Type: Grant
    Filed: December 10, 1997
    Date of Patent: October 26, 1999
    Assignee: Texas Instruments Incorporated
    Inventors: Ming Yang, Masahiro Kaida, Tom Lassister, Fred D. Fishburn