Abstract: A molecular resist composition is provided comprising (A) a betaine type onium compound having a sulfonium cation moiety and a sulfonate anion moiety in a common molecule, the sulfonium cation moiety having a phenyl group substituted with an optionally heteroatom-containing monovalent hydrocarbon group, the phenyl group being attached to the sulfur atom, and (B) an organic solvent, the resist composition being free of a base resin. When processed by lithography using KrF, ArF excimer laser, EB or EUV, the resist composition is improved in dissolution contrast, EL, MEF, and LWR.

Abstract: A molecular resist composition and a pattern forming process. A molecular resist composition comprising a sulfonium salt having a cation of specific structure and an organic solvent has a high sensitivity and forms a resist film with improved resolution and LWR, when processed by EB or EUV lithography. The molecular resist composition does not contain a base polymer. The molecular resist composition comprising a sulfonium salt having a cation of specific partial structure has a high sensitivity and forms a resist film with improved resolution and LWR, so that the resist composition is quite useful for precise micropatterning.

Abstract: A high-resolution display device is provided. A display device with both high display quality and high resolution is provided. The display device includes a first display element including a first pixel electrode, a first EL layer, and a common electrode; a second display element including a second pixel electrode, a second EL layer, and the common electrode; a first insulating layer covering an end portion of the first pixel electrode and an end portion of the second pixel electrode; a second insulating layer over the first insulating layer; and a third insulating layer over the second insulating layer. The first EL layer is placed over the first pixel electrode and the third insulating layer. The second EL layer is placed over the second pixel electrode and the third insulating layer.

Abstract: A display device with high resolution is provided. A display device with a high aperture ratio is provided. The display device includes a first pixel electrode, a second pixel electrode, a first insulating layer, a second insulating layer, a first EL layer, a second EL layer, and a common electrode. The first insulating layer covers end portions of the first pixel electrode and the second pixel electrode. The second insulating layer is provided over the first pixel electrode, the second pixel electrode, and the first insulating layer and covers an end portion of the first insulating layer. The first EL layer is provided over the first pixel electrode and the second EL layer is provided over the second pixel electrode. An end portion of the first EL layer and an end portion of the second EL layer face each other and overlap with the first insulating layer. The common electrode includes a portion overlapping with the first EL layer and a portion overlapping with the second EL layer.

Abstract: To provide a semiconductor device including a planar transistor having an oxide semiconductor and a capacitor. In a semiconductor device, a transistor includes an oxide semiconductor film, a gate insulating film over the oxide semiconductor film, a gate electrode over the gate insulating film, a second insulating film over the gate electrode, a third insulating film over the second insulating film, and a source and a drain electrodes over the third insulating film; the source and the drain electrodes are electrically connected to the oxide semiconductor film; a capacitor includes a first and a second conductive films and the second insulating film; the first conductive film and the gate electrode are provided over the same surface; the second conductive film and the source and the drain electrodes are provided over the same surface; and the second insulating film is provided between the first and the second conductive films.

Abstract: A light-emitting element includes: a first insulating film located on a p-side semiconductor layer and having a plurality of first p-side openings provided above the p-side semiconductor layer; a first conductive layer located on the first insulating film and electrically connected to the p-side semiconductor layer at the plurality of first p-side openings; a second insulating film located on the first conductive layer and having a second p-side opening provided at a position away from the first p-side openings in a plan view; a second conductive layer located on the second insulating film and electrically connected to the first conductive layer at the second p-side opening; and a p-side electrode located on the second conductive layer at a position away from the second p-side opening in a plan view.

Abstract: To provide a semiconductor device including a planar transistor having an oxide semiconductor and a capacitor. In a semiconductor device, a transistor includes an oxide semiconductor film, a gate insulating film over the oxide semiconductor film, a gate electrode over the gate insulating film, a second insulating film over the gate electrode, a third insulating film over the second insulating film, and a source and a drain electrodes over the third insulating film; the source and the drain electrodes are electrically connected to the oxide semiconductor film; a capacitor includes a first and a second conductive films and the second insulating film; the first conductive film and the gate electrode are provided over the same surface; the second conductive film and the source and the drain electrodes are provided over the same surface; and the second insulting film is provided between the first and the second conductive films.

Abstract: A sealing method for sealing an opening of a metallic molded body with a resin molded body, the metallic molded body having a cavity therein and an opening connected to the cavity, includes a step of irradiating laser light onto a joining surface on a periphery of the opening of the metallic molded body in an energy density of 1 MW/cm2 or more and at an irradiation rate of 2000 mm/sec or more to roughen the surface, and a step of placing, in a mold, a portion including the joining surface of the metallic molded body roughened in the preceding step and sealing the opening with a resin molded body formed by injection molding or compression molding of a resin.

Abstract: A sealing method for sealing an opening of a metallic molded body with a resin molded body, the metallic molded body having a cavity therein and an opening connected to the cavity, includes a step of irradiating laser light onto a joining surface on a periphery of the opening of the metallic molded body in an energy density of 1 MW/cm2 or more and at an irradiation rate of 2000 mm/sec or more to roughen the surface, and a step of placing, in a mold, a portion including the joining surface of the metallic molded body roughened in the preceding step and sealing the opening with a resin molded body formed by injection molding or compression molding of a resin.

Abstract: A fuel cell unit includes a fuel cell stack, an electrical device, a harness connected to the electrical device, and a casing incorporating the fuel cell stack, the electrical device, and the harness. The casing includes a first accommodation portion, a second accommodation portion, and a partition wall provided with a first communication hole through which the harness passes, the first accommodation portion accommodating the fuel cell stack, the second accommodation portion accommodating the electrical device, the partition wall partitioning the first accommodation portion and the second accommodation portion, and the partition wall is provided with at least one second communication hole through which the first accommodation portion and the second accommodation portion communicate with each other, in addition to the first communication hole.

Abstract: Provided is a fuel-cell end plate that is disposed at an end, in a stacking direction, of a fuel cell stack formed by stacking members including a single cell. This fuel-cell end plate has, on a surface disposed so as to face the outside of the fuel cell stack, a first rib that extends in a first direction and a second rib that extends in a second direction different from the first direction, intersects the first rib, and is formed so as to be shorter in height than the first rib.

Abstract: A fuel cell stack includes a stacked body including unit cells that are stacked and an end member arranged at an end side of the stacked body in a stacking direction of the stacked body.

Abstract: A run-flat tire has a belt-end reinforcing layer provided between the tread portion and a width outside end of the belt layer, and formed of a resin material. The belt-end reinforcing layer is annular along a tire circumferential direction, has a predetermined width along the tire width direction, and is provided in the tire width direction so as to cover a radial outside end of a side reinforcing rubber and a width outside end of the belt layer.

Abstract: A run-flat tire is provided with a belt layer having a circumferential cord extending along the tire circumferential direction covered with a resin material, a first resin reinforcing layer provided on the outside of the belt layer of the tire radial direction and formed of a resin material, and a second resin reinforcing layer provided on the inside of the belt layer of the tire radial direction and formed of a resin material, wherein the first resin reinforcing layer and the second resin reinforcing layer have a predetermined width along the tire width direction and are provided so as to sandwich the tire radial direction outside end of a side reinforcing rubber from the outside of the tire radial direction and the inside of the tire radial direction.

Abstract: To provide a semiconductor device including a planar transistor having an oxide semiconductor and a capacitor. In a semiconductor device, a transistor includes an oxide semiconductor film, a gate insulating film over the oxide semiconductor film, a gate electrode over the gate insulating film, a second insulating film over the gate electrode, a third insulating film over the second insulating film, and a source and a drain electrodes over the third insulating film; the source and the drain electrodes are electrically connected to the oxide semiconductor film; a capacitor includes a first and a second conductive films and the second insulating film; the first conductive film and the gate electrode are provided over the same surface; the second conductive film and the source and the drain electrodes are provided over the same surface; and the second insulting film is provided between the first and the second conductive films.

Abstract: The pneumatic tire according to the disclosure includes a resin-coated belt comprising a wire coated with a coating resin. A base ring is formed at a tire radial inside of the resin-coated belt, while being in contact with a tire widthwise outer end of the resin-coated belt. A concavo-convex portion is formed on at least one of surfaces of the base ring.

Abstract: A semiconductor device is manufactured with high mass productivity at low cost. Yield in a manufacturing process of the semiconductor device is improved. An island-shaped metal oxide layer is formed over a substrate, a resin layer is formed over the metal oxide layer to cover an end portion of the metal oxide layer, and the metal oxide layer and the resin layer are separated by light irradiation. After forming the resin layer and before the light irradiation, an insulating layer is formed over the resin layer. For example, the resin layer is formed in an island shape and the insulating layer is formed to cover an end portion of the resin layer. In the case where an adhesive layer is formed over the resin layer, the adhesive layer is preferably formed to be located inward from the end portion of the metal oxide layer.

Abstract: A method for roughening a surface of a metal molded body which can be used as an intermediate for manufacturing a composite molded body of a metal molded body with a resin, a rubber, a metal, or the like is provided. The method for roughening a metal molded body surface includes a step of irradiating the surface of the metal molded body with laser light at an irradiation rate of 2000 mm/sec or more with an energy density of 1 MW/cm2 or more using a laser apparatus, and the laser light irradiation step is a step of irradiating laser light so that laser light-irradiated portions and non-laser light-irradiated portions are generated alternately when the laser light is irradiated to be in a straight line, a curved line, or a combination of a straight line and a curved line on the surface of the metal molded body to be roughened.

Abstract: Provided is a fuel-cell end plate that is disposed at an end, in a stacking direction, of a fuel cell stack formed by stacking members including a single cell. This fuel-cell end plate has, on a surface disposed so as to face the outside of the fuel cell stack, a first rib that extends in a first direction and a second rib that extends in a second direction different from the first direction, intersects the first rib, and is formed so as to be shorter in height than the first rib.

Abstract: To provide a semiconductor device including a planar transistor having an oxide semiconductor and a capacitor. In a semiconductor device, a transistor includes an oxide semiconductor film, a gate insulating film over the oxide semiconductor film, a gate electrode over the gate insulating film, a second insulating film over the gate electrode, a third insulating film over the second insulating film, and a source and a drain electrodes over the third insulating film; the source and the drain electrodes are electrically connected to the oxide semiconductor film; a capacitor includes a first and a second conductive films and the second insulating film; the first conductive film and the gate electrode are provided over the same surface; the second conductive film and the source and the drain electrodes are provided over the same surface; and the second insulating film is provided between the first and the second conductive films.