Abstract: A cylindrical part of a rotor for an eddy current deceleration device of the present embodiment has a chemical composition consisting of, by mass %, C: 0.05 to 0.15%, Si: 0.10 to 0.40%, Mn: 0.50 to 1.00%, P: 0.030% or less, S: 0.030% or less, Mo: 0.20 to 1.00%, Nb: 0.020 to 0.060%, V: 0.040 to 0.080%, sol. Al: 0.030 to 0.100%, B: 0.0005 to 0.0050%, N: 0.003 to 0.010%, Cu: 0 to 0.20%, Ni: 0 to 0.20%, Cr: 0 to 0.10%, and the balance: Fe and impurities, and in which the total area fraction of martensite and bainite in a microstructure is more than 95.0%, and the number density of carbides having an equivalent circular diameter of 100 to 500 nm is 0.35 to 0.75 particles/?m2.

Abstract: Provided is a production method for an all-solid-state battery having a solid electrolyte layer between a positive electrode layer and a negative electrode layer, the production method including: coating or impregnating the positive electrode layer and/or the negative electrode layer with a solid electrolyte solution in which a boron hydride compound serving as the solid electrolyte has been dissolved in a solvent; and removing the solvent from the coated or impregnated solid electrolyte solution and causing the solid electrolyte to precipitate on the positive electrode layer and/or the negative electrode layer.

Abstract: A cooling device is employed in a vehicle including an internal combustion engine provided with a forced-induction device and an intercooler. The cooling device includes a circulation circuit configured to circulate coolant supplied to the intercooler, an electric pump configured to operate to circulate the coolant in the circulation circuit, and processing circuitry configured to control a discharge amount of the coolant of the pump. The processing circuitry is configured to execute a control amount deriving process of deriving a control amount of the pump based on a requested flow rate and a coolant temperature, and an operation process of causing the pump to operate based on the control amount when the requested flow rate is larger than 0.

Abstract: A hybrid electric vehicle includes an engine including a cylinder and a spark plug, a motor, a clutch provided between the engine and the motor, and a control device configured to start combustion in the engine by supplying electric power to the spark plug while cranking the engine via the clutch using the motor when a start request for the engine is issued. The control device includes a measuring unit configured to measure a power supply time of the spark plug in cranking of the engine, a count unit configured to count a long-time power supply number which is the number of times the power supply time is equal to or greater than a predetermined first time, and a correction unit configured to correct a cranking torque necessary for cranking the engine and required for the motor such that the cranking torque increases as the long-time power supply number increases.

Abstract: A cooling device is employed in a vehicle including an internal combustion engine provided with a forced-induction device and an intercooler. The cooling device includes a circulation circuit configured to circulate coolant supplied to the intercooler, an electric pump configured to operate to circulate the coolant in the circulation circuit, and processing circuitry configured to control a discharge amount of the coolant of the pump. The processing circuitry is configured to execute a control amount deriving process of deriving a control amount of the pump based on a requested flow rate and a coolant temperature, and an operation process of causing the pump to operate based on the control amount when the requested flow rate is larger than 0.

Abstract: A method of manufacturing a nitride semiconductor device includes: forming a first semiconductor layer containing Al, Ga, and N and having a first thickness by doping a p-type impurity; forming a second semiconductor layer over the first semiconductor layer without doping an n-type impurity and without doping a p-type impurity, the second semiconductor layer containing Al and N and having a second thickness; and heat treating the first semiconductor layer and the second semiconductor layer. The second thickness is less than the first thickness. T band gap energy of the second semiconductor layer is greater than a band gap energy of the first semiconductor layer. After the heat treating of the first semiconductor layer and the second semiconductor layer, the second semiconductor layer contains the p-type impurity by diffusion of the p-type impurity from the first semiconductor layer.

Abstract: A cooler includes a base on the upper surface of which semiconductor elements are mounted; a housing which is superimposed on the rear surface side of the base and between which and the base a refrigerant flow path is formed; screws which are disposed in the outer peripheral portion of an overlap region between the base and the housing and which fasten and fix the base to the housing; O-rings which seal the outer peripheral portion of the refrigerant flow path; and joining members which are disposed in a joining surface portion of the housing, which is inside the outer peripheral portion of the refrigerant flow path and makes contact with the base, and which bite into the base and housing in an unpenetrated state. The joining strength between the housing and the base is reinforced by the joining members whose joint interfaces are not exposed to the outside.

Abstract: An electronic component fixation structure disclosed in the present application includes a holding member which, being made of an insulating material, is formed of a storing portion which stores a main body portion of an electronic component, a protection portion which surrounds a plurality of connection terminals of the electronic component, and a pair of protrusion portions which protrude upward from the respective central portions of a pair of side walls of the protection portion; and a wiring substrate on which to connect between electronic components, wherein the pair of protrusion portions of the holding member are engaged with the wiring substrate, and the plurality of connection terminals of the electronic component are solder connected to the wiring substrate.

Abstract: A controller for an internal combustion engine includes an intake air amount obtaining unit, an open-closed determination unit, and an air bypass valve control unit. The intake air amount obtaining unit is configured to obtain, using a target torque of the internal combustion engine, a target throttle passage amount as a target value of an amount of intake air drawn through a throttle valve. The open-closed determination unit is configured to determine whether a valve opening condition for first and second air bypass valves is satisfied. The air bypass valve control unit is configured to open the first and second air bypass valves when the valve opening condition is satisfied. The open-closed determination unit is configured to determine that the valve opening condition is satisfied when a decrease speed of the target throttle passage amount is greater than a specified determination speed.

Abstract: A capacitor and a discharge resistor can be connected using a simplified configuration without using a bus bar. A connection of a capacitor and a discharge resistor of a power conversion device are carried out using wire harnesses that form positive and negative lines. The capacitor and the discharge resistor are integrated by being directly connected using a first wire harness. A second wire harness is drawn out from a terminal portion electrically separated from a first terminal portion of the capacitor; and a third wire harness is drawn out from the discharge resistor, where the second wire harness and the third wire harness are fastened.

Abstract: According to one embodiment, the failure analysis system of the semiconductor device includes a memory, a failure information management table, and an analyzing unit. The memory stores normal/failure information collected in a block unit and a column unit in a chip, in a plurality of inspection processes of the semiconductor memory. The failure information management table stores the normal/failure information in the block unit and the column unit stored in the memory, with an addition of product information, fabricating information including a lot number, a wafer number, and a chip address, process information, and test information, which are common information ranging over the inspection processes. The analyzing unit analyzes the normal/failure information in the block unit and the column unit ranging over the plurality of inspection processes, on the basis of the information stored in the failure information management table.

Abstract: A controller for an internal combustion engine includes an intake air amount obtaining unit, an open-closed determination unit, and an air bypass valve control unit. The intake air amount obtaining unit is configured to obtain, using a target torque of the internal combustion engine, a target throttle passage amount as a target value of an amount of intake air drawn through a throttle valve. The open-closed determination unit is configured to determine whether a valve opening condition for first and second air bypass valves is satisfied. The air bypass valve control unit is configured to open the first and second air bypass valves when the valve opening condition is satisfied. The open-closed determination unit is configured to determine that the valve opening condition is satisfied when a decrease speed of the target throttle passage amount is greater than a specified determination speed.

Abstract: A method of manufacturing a nitride semiconductor device includes: forming a first semiconductor layer containing Al, Ga, and N and having a first thickness by doping a p-type impurity; forming a second semiconductor layer over the first semiconductor layer without doping an n-type impurity and without doping a p-type impurity, the second semiconductor layer containing Al and N and having a second thickness; and heat treating the first semiconductor layer and the second semiconductor layer. The second thickness is less than the first thickness. T band gap energy of the second semiconductor layer is greater than a band gap energy of the first semiconductor layer. After the heat treating of the first semiconductor layer and the second semiconductor layer, the second semiconductor layer contains the p-type impurity by diffusion of the p-type impurity from the first semiconductor layer.

Abstract: An electronic component fixation structure disclosed in the present application includes a holding member which, being made of an insulating material, is formed of a storing portion which stores a main body portion of an electronic component, a protection portion which surrounds a plurality of connection terminals of the electronic component, and a pair of protrusion portions which protrude upward from the respective central portions of a pair of side walls of the protection portion; and a wiring substrate on which to connect between electronic components, wherein the pair of protrusion portions of the holding member are engaged with the wiring substrate, and the plurality of connection terminals of the electronic component are solder connected to the wiring substrate.

Abstract: Provided is a connection structure for a power conversion device to be mounted in a vehicle, including: a casing of the power conversion device; an electric connection part, which is to be mechanically connected to the casing, and is configured to electrically connect the power conversion device and an external device to each other; and an electric conductor configured to electrically connect the power conversion device and the electric connection part to each other, wherein the casing and the electric connection part are mechanically connected to each other through intermediation of an anti-vibration structure, and wherein the electric conductor has such flexibility as to be able to follow a relative displacement between the casing and the electric connection part.

Abstract: The present application provides a power conversion device such that a capacitor and a discharge resistor can be connected using a simplified configuration without using a bus bar. A connection of a capacitor and a discharge resistor of a power conversion device are carried out using wire harnesses that form positive and negative lines. The capacitor and the discharge resistor are integrated by being directly connected using a first wire harness. Furthermore, crimp terminals are provided respectively in leading end portions of a second. wire harness and a third wire harness drawn out from the capacitor and the discharge resistor respectively, and continuity is obtained by connecting the crimp terminals. A performance inspection of the capacitor can be carried out in a state wherein the crimp terminals are not connected.

Abstract: A cooler includes a base on the upper surface of which semiconductor elements are mounted; a housing which is superimposed on the rear surface side of the base and between which and the base a refrigerant flow path is formed; screws which are disposed in the outer peripheral portion of an overlap region between the base and the housing and which fasten and fix the base to the housing; O-rings which seal the outer peripheral portion of the refrigerant flow path; and joining members which are disposed in a joining surface portion of the housing, which is Inside the outer peripheral portion of the refrigerant flow path and makes contact with the base, and which bite into the base and housing in an unpenetrated state. The joining strength between the housing and the base is reinforced by the joining members whose joint interfaces are not exposed to the outside.

Abstract: A wastegate opens and closes the flow path of a bypass passage that bypasses the turbine of a forced-induction device. A processor changes the drive current for the electric actuator in a stepwise manner from a state where the wastegate is stationary in a given standstill position. The amount of change in the drive current that is made until the wastegate is determined to be moved is learned as a learning value. A requested drive current for moving the wastegate to a target opening degree is corrected based on the learning value.

Abstract: A cooling device for a vehicle includes a mechanical fan configured to be driven by a driving force of the engine, an engine cooling heat exchanger disposed forward of the mechanical fan in a front-rear direction of the vehicle, a first heat exchanger and a second heat exchanger that are disposed forward of the engine cooling heat exchanger in the front-rear direction of the vehicle, a first electric fan that includes a first motor and cools the first heat exchanger, and a second electric fan that includes a second motor and cools the second heat exchanger. The first motor and the second motor are disposed forward of the first heat exchanger and the second heat exchanger, respectively, in the front-rear direction of the vehicle such that the first motor and the second motor do not overlap the coupling when viewed in a front direction of the vehicle.

Abstract: In order to achieve small noise and small vibration, as well as a small size and a low cost in a power converter including a capacitor module, there is provided a power converter including a power module and a capacitor module. The capacitor module includes: a plurality of capacitor elements each having a flat wound surface; an exterior case; a resin filler; and a restraint point. The exterior case has arranged therein an inclusion serving as a beam in a direction orthogonal to a flat wound surface of at least one capacitor element of the plurality of capacitor elements, and the at least one capacitor element, and the restraint point is arranged substantially in front of the flat wound surface via the inclusion.