Abstract: In a vehicle seat comprising a seat cushion and a seatback, the seatback comprises a seatback frame including a right and a left side member extending vertically, a side airbag unit attached to one of the side members, a flexible seatback pad provided with a pad side slit to permit an airbag to be deployed opposite to the side airbag unit, a skin member having a skin side slit in a part thereof corresponding to the pad side slit, and a retaining sheet connected to a part of a back side of the seatback pad opposing the side member, and to the side member so as to fixedly secure a position of the seatback pad relative to the side member.

Abstract: In a vehicle seat comprising a seat cushion and a seatback, the seatback comprises a seatback frame including a right and a left side member extending vertically, a side airbag unit attached to one of the side members, a flexible seatback pad provided with a pad side slit to permit an airbag to be deployed opposite to the side airbag unit, a skin member having a skin side slit in a part thereof corresponding to the pad side slit, and a retaining sheet connected to a part of a back side of the seatback pad opposing the side member, and to the side member so as to fixedly secure a position of the seatback pad relative to the side member.

Abstract: In a vehicle seat (1) comprising a seat cushion (2) and a seatback (3), the seatback comprises a seatback frame (20) including a right and a left side member (24) extending vertically, a side airbag unit (30) attached to one of the side members, a flexible seatback pad (21) provided with a pad side slit (44) to permit an airbag to be deployed opposite to the side airbag unit, a skin member (22) having a skin side slit (51) in a part thereof corresponding to the pad side slit, and a retaining sheet (60) connected to a part of a back side of the seatback pad opposing the side member, and to the side member so as to fixedly secure a position of the seatback pad relative to the side member.

Abstract: In a vehicle seat (1) comprising a seat cushion (2) and a seatback (3), the seatback comprises a seatback frame (20) including a right and a left side member (24) extending vertically, a side airbag unit (30) attached to one of the side members, a flexible seatback pad (21) provided with a pad side slit (44) to permit an airbag to be deployed opposite to the side airbag unit, a skin member (22) having a skin side slit (51) in a part thereof corresponding to the pad side slit, and a retaining sheet (60) connected to a part of a back side of the seatback pad opposing the side member, and to the side member so as to fixedly secure a position of the seatback pad relative to the side member.

Abstract: A thin film transistor matrix device comprises an insulating substrate, a plurality of picture element electrodes arranged in a matrix on the insulating substrate, source electrodes connected to the respective picture element electrodes, drain electrodes opposed to the respective source electrodes, operational semiconductor layers sandwiched by the source electrodes and the drain electrodes, and gate electrodes formed on the operational semiconductor layers through gate insulating films, each gate electrode being narrowed with respect to the associated gate insulating film so that side walls of the gate electrode forms a step with respect to side walls of the associated gate insulating film which is a substrate of the gate electrode.

Abstract: A thin film transistor matrix device comprises an insulating substrate, a plurality of picture element electrodes arranged in a matrix on the insulating substrate, source electrodes connected to the respective picture element electrodes, drain electrodes opposed to the respective source electrodes, operational semiconductor layers sandwiched by the source electrodes and the drain electrodes, and gate electrodes formed on the operational semiconductor layers through gate insulating films, each gate electrode being narrowed with respect to the associated gate insulating film so that side walls of the gate electrode forms a step with respect to side walls of the associated gate insulating film which is a substrate of the gate electrode.

Abstract: A thin film transistor matrix device is fabricated by forming a transparent conductor film and a metal film on an insulating substrate in this order. The metal film and the transparent conductor film are together patterned to form picture element electrodes, and drain bus lines or gate bus lines. Source electrodes and drain electrodes may also be formed from the transparent conductor film and metal film. A semiconductor layer, an insulating film and a conductor film may be formed on the entire surface in this order. In this case, the conductor film, the insulator film and the semiconductor layer are patterned to form an active layer from the semiconductor layer, gate insulating films from the insulating film, and gate electrodes and gate bus lines from the conductor film. By patterning the conductor film, the insulating film and the semiconductor layer, the metal film of the picture element electrodes and drain bus lines is exposed.

Abstract: A method of manufacturing a semiconductor device according to the present invention includes a process of introducing impurities into a semiconductor layer with a gate electrode and a resist film as a mask after a resist film is formed on the top and the side of the gate electrode by soaking the gate electrode on a semiconductor layer in an electrolyte containing resist and applying voltage to the gate electrode.

Abstract: A crystal silicon film deposited on an insulating film made of a binary system material or a binary system semiconductor film formed by an atomic layer deposition method has a grain as large as approximately 200 nm. Thus, the mobility of carriers is increased. The crystal silicon thereof is grown within a temperature range of 250.degree. C. to 400.degree. C. Accordingly, when a planar type thin film transistor, an inverted stagger type thin film transistor or a stagger type thin film transistor is formed using crystal silicon formed on these films made of a binary system material, transistor characteristics thereof are improved.