Abstract: A trapezoid-like resistive multilayer is formed on a substrate with both side faces as continuous inclined faces. The bias underlayer is formed at a level halfway of each inclined face of the resistive multilayer, and the entire surface of an underlayer of a bias layer is in contact with the bias underlayer. The bias layer is formed on the bias underlayer by being lifted up at a level of a free magnetic layer. The magnetic sensing element comprises a gap layer an antiferromagnetic layer, a pinned magnetic layer and an amorphous conductive layer is formed in each side area of the antiferromagnetic layer, the bias underlayer and bias layer are formed on the amorphous conductive layer from the bottom in this order, and the bias layer is formed as a underlayer of each side area of the antiferromagnetic layer, amorphous conductive layer and bias layer.

Abstract: The present invention provides a spin-valve type thin film magnetic element that is able to certainly align the magnetization direction of the free magnetic layer in one direction by improving the exchange coupling magnetic field generated between the bias layers and ferromagnetic layer, and is able to reduce the thickness of the bias layer to be smaller than the thickness of the bias layer of the conventional spin-valve type thin film magnetic element for obtaining the same magnitude of the exchange coupling magnetic layer as that in the conventional spin-valve type thin film magnetic element.

Abstract: A spin-valve thin-film magnetic element includes a laminate formed on a substrate, the laminate including an antiferromagnetic layer, a pinned magnetic layer in contact with the antiferromagnetic layer, a nonmagnetic conductive layer in contact with the pinned magnetic layer, and a free magnetic layer in contact with the nonmagnetic conductive layer; bias layers formed on both sides in the track-width direction of the laminate; and electrode layers formed on the bias layers. The bias layers are in contact with both sides of the laminate and extend over the peripheral sections of the laminate with ferromagnetic bias underlying layers therebetween, the bias underlying layers being composed of Fe or an Fe—Co alloy with a thickness of 1.6 to 4.3 nm. A method for fabricating a spin-valve thin-film magnetic element is also disclosed.

Abstract: A thin-film magnetic element comprises a substrate and a magnetoresistive multilayer film provided on the substrate. The multilayer film includes at least one magnetic layer. Bias underlayers formed of a nonmagnetic material are comprised in the thin-film magnetic element, having sidewall portions formed along side surfaces of the multilayer film and base portions formed on the surface of the substrate in the track width direction. The thickness of the sidewall portions is larger than that of the base portions. Hard magnetic layers for orienting the magnetization direction of at least one magnetic layer are deposited on the bias underlayers at sides of the multilayer film.

Abstract: A trapezoid-like resistive multilayer is formed on a substrate with both side faces as continuous inclined faces. The bias underlayer is formed at a level halfway of each inclined face of the resistive multilayer, and the entire surface of an underlayer of a bias layer is in contact with the bias underlayer. The bias layer is formed on the bias underlayer by being lifted up at a level of a free magnetic layer. The magnetic sensing element comprises a gap layer an antiferromagnetic layer, a pinned magnetic layer and an amorphous conductive layer is formed in each side area of the antiferromagnetic layer, the bias underlayer and bias layer are formed on the amorphous conductive layer from the bottom in this order, and the bias layer is formed as a underlayer of each side area of the antiferromagnetic layer, amorphous conductive layer and bias layer.

Abstract: A thin-film magnetic element comprises a substrate and a magnetoresistive multilayer film provided on the substrate. The multilayer film includes at least one magnetic layer. Bias underlayers formed of a nonmagnetic material are comprised in the thin-film magnetic element, having sidewall portions formed along side surfaces of the multilayer film and base portions formed on the surface of the substrate in the track width direction. The thickness of the sidewall portions is larger than that of the base portions. Hard magnetic layers for orienting the magnetization direction of at least one magnetic layer are deposited on the bias underlayers at sides of the multilayer film.

Abstract: The present invention provides a spin-valve type thin film magnetic element that is able to certainly align the magnetization direction of the free magnetic layer in one direction by improving the exchange coupling magnetic field generated between the bias layers and ferromagnetic layer, and is able to reduce the thickness of the bias layer to be smaller than the thickness of the bias layer of the conventional spin-valve type thin film magnetic element for obtaining the same magnitude of the exchange coupling magnetic layer as that in the conventional spin-valve type thin film magnetic element.

Abstract: A spin-valve thin-film magnetic element includes a laminate formed on a substrate, the laminate including an antiferromagnetic layer, a pinned magnetic layer in contact with the antiferromagnetic layer, a nonmagnetic conductive layer in contact with the pinned magnetic layer, and a free magnetic layer in contact with the nonmagnetic conductive layer; bias layers formed on both sides in the track-width direction of the laminate; and electrode layers formed on the bias layers. The bias layers are in contact with both sides of the laminate and extend over the peripheral sections of the laminate with ferromagnetic bias underlying layers therebetween, the bias underlying layers being composed of Fe or an Fe-Co alloy with a thickness of 1.6 to 4.3 nm. A method for fabricating a spin-valve thin-film magnetic element is also disclosed.

Abstract: The present invention provides a spin-valve type thin film magnetic element that is able to certainly align the magnetization direction of the free magnetic layer in one direction by improving the exchange coupling magnetic field generated between the bias layers and ferromagnetic layer, and is able to reduce the thickness of the bias layer to be smaller than the thickness of the bias layer of the conventional spin-valve type thin film magnetic element for obtaining the same magnitude of the exchange coupling magnetic layer as that in the conventional spin-valve type thin film magnetic element.