Patents by Inventor Masahiro Sakuragi
Masahiro Sakuragi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240183732Abstract: The present disclosure provides a MEMS sensor. The MEMS sensor includes: a semiconductor substrate having a first surface and a second surface opposite to the first surface, and including a cavity; a membrane on the first surface to seal the cavity; a first region of a first conductivity type formed at a bottom of the cavity; and a second region of a second conductivity type formed on the membrane, facing the first region and separated from the first region by the cavity.Type: ApplicationFiled: November 30, 2023Publication date: June 6, 2024Applicant: ROHM CO., LTD.Inventor: Masahiro SAKURAGI
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Publication number: 20240183734Abstract: The present disclosure provides a MEMS sensor. The MEMS sensor includes: a substrate, on which a first sensor region for an acceleration sensor is formed; a first cavity, formed in the first sensor region of the substrate; a first weight portion, including a first membrane formed on the first cavity; a beam portion, supporting the first weight portion; and a piezoresistor, formed in the beam portion. A first opposing surface of the first weight portion facing the first cavity and a second opposing surface of the beam portion facing the first cavity are formed on same plane.Type: ApplicationFiled: November 30, 2023Publication date: June 6, 2024Applicant: ROHM CO., LTD.Inventor: Masahiro SAKURAGI
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Patent number: 11643324Abstract: A MEMS sensor includes a silicon substrate that has a first surface and a second surface on a side opposite to the first surface and that has a cavity in the first surface, a silicon diaphragm that has a first surface and a second surface on aside opposite to the first surface and in which the second surface is joined directly to the first surface of the silicon substrate, and a piezoresistance formed at the first surface of the silicon diaphragm, and, in the MEMS sensor, a plane orientation of the first surface of the silicon substrate and a plane orientation of the first surface of the silicon diaphragm differ from each other.Type: GrantFiled: August 4, 2020Date of Patent: May 9, 2023Assignee: ROHM CO., LTD.Inventor: Masahiro Sakuragi
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Publication number: 20210039946Abstract: A MEMS sensor includes a silicon substrate that has a first surface and a second surface on a side opposite to the first surface and that has a cavity in the first surface, a silicon diaphragm that has a first surface and a second surface on aside opposite to the first surface and in which the second surface is joined directly to the first surface of the silicon substrate, and a piezoresistance formed at the first surface of the silicon diaphragm, and, in the MEMS sensor, a plane orientation of the first surface of the silicon substrate and a plane orientation of the first surface of the silicon diaphragm differ from each other.Type: ApplicationFiled: August 4, 2020Publication date: February 11, 2021Applicant: ROHM CO., LTD.Inventor: Masahiro SAKURAGI
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Patent number: 10597288Abstract: A method for manufacturing a MEMS device includes a hole forming step of forming a plurality of holes concaved from a principal surface in a substrate material including a semiconductor, a connecting-hollow-portion forming step of forming a connecting hollow portion that connects the plurality of holes together, and a movable-portion forming step of, by partially moving the semiconductor of the substrate material so as to close at least one part of the plurality of holes, forming a hollow portion that exists inside the substrate material and a movable portion that coincides with the hollow portion when viewed in a thickness direction of the substrate material.Type: GrantFiled: May 25, 2018Date of Patent: March 24, 2020Assignee: ROHM CO., LTD.Inventor: Masahiro Sakuragi
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Patent number: 10260974Abstract: An electronic part (air pressure detecting device) 1 includes a sensor element (air pressure sensor element) 2 that includes an ambient air contacting surface S including an ambient air contacting region Sa to be exposed to ambient air, and a supporting substrate 4, arranged to support the sensor element 2. The sensor element 2 is bonded to one surface 4a of the supporting substrate 4 in a state where its ambient air contacting surface S faces the one surface 4a of the supporting substrate 4 and a gap, through which the ambient air flows, is formed between the ambient air contacting surface S and the one surface 4a of the supporting substrate 4.Type: GrantFiled: February 9, 2017Date of Patent: April 16, 2019Assignee: ROHM CO., LTD.Inventor: Masahiro Sakuragi
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Publication number: 20180346322Abstract: A method for manufacturing a MEMS device includes a hole forming step of forming a plurality of holes concaved from a principal surface in a substrate material including a semiconductor, a connecting-hollow-portion forming step of forming a connecting hollow portion that connects the plurality of holes together, and a movable-portion forming step of, by partially moving the semiconductor of the substrate material so as to close at least one part of the plurality of holes, forming a hollow portion that exists inside the substrate material and a movable portion that coincides with the hollow portion when viewed in a thickness direction of the substrate material.Type: ApplicationFiled: May 25, 2018Publication date: December 6, 2018Applicant: ROHM CO., LTD.Inventor: Masahiro SAKURAGI
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Publication number: 20170284881Abstract: An electronic part (air pressure detecting device) 1 includes a sensor element (air pressure sensor element) 2 that includes an ambient air contacting surface S including an ambient air contacting region Sa to be exposed to ambient air, and a supporting substrate 4, arranged to support the sensor element 2. The sensor element 2 is bonded to one surface 4a of the supporting substrate 4 in a state where its ambient air contacting surface S faces the one surface 4a of the supporting substrate 4 and a gap, through which the ambient air flows, is formed between the ambient air contacting surface S and the one surface 4a of the supporting substrate 4.Type: ApplicationFiled: February 9, 2017Publication date: October 5, 2017Applicant: ROHM CO., LTD.Inventor: Masahiro SAKURAGI
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Patent number: 9568385Abstract: A semiconductor pressure sensor (720) includes a thin film piezoelectric element (701) which applies strain to a portion of a semiconductor substrate that corresponds to a thin region (402). The thin film piezoelectric element (701) is formed at a distance away from diffusion resistors (406, 408, 410, and 412) functioning as strain gauges and is extended to the proximity of a bonding pad (716A) connected to an upper electrode layer of the thin film piezoelectric element and a bonding pad (716F) connected to a lower electrode thereof. The diffusion resistors (406, 408, 410, and 412) constitute a bridge circuit by metal wiring (722) and diffusion wiring (724). During self-diagnosis, a prescribed voltage is applied to a thin film piezoelectric element (701). If the output difference of the bridge circuit between before and after the voltage application falls outside a prescribed range, it is determined that a breakage occurs in the semiconductor pressure sensor (720).Type: GrantFiled: July 2, 2014Date of Patent: February 14, 2017Assignee: Rohm Co., Ltd.Inventors: Nobuyuki Yamada, Masahiro Sakuragi, Takeshi Yoshida, Kei Hayashi
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Patent number: 9410987Abstract: A probe card includes a board or silicon substrate; a plurality of probes (terminals) at a first surface of the board, the respective probes having a first extending portion extending along the first surface of the board; a plurality of through-holes formed in correspondence to the respective probes and penetrating between the first and second surfaces of the board; through electrodes embedded in the respective through-holes and conductively connected to the probes in the respective through-holes; and a wiring at the second surface of the board conductively connected to the through electrodes, the wiring having a second extending portion extending along the second surface of the board, wherein the first extending portion and the second extending portion extend in different directions from each other, and a space is formed across the entire width of the first extending portion between the first extending portion and the first surface of the board.Type: GrantFiled: January 16, 2015Date of Patent: August 9, 2016Assignee: ROHM CO., LTD.Inventors: Goro Nakatani, Masahiro Sakuragi, Koichi Niino
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Publication number: 20150123691Abstract: Provided is a method for manufacturing a probe card which inspects electrical characteristics of a plurality of semiconductor devices in batch. The method includes: a step of forming a plurality of probes, which are to be brought into contact with external terminals of the semiconductor devices, on one side of a board which forms the base body of the probe card; a step of forming on the board, by photolithography and etching, a plurality of through-holes which reach the probes from the other side of the board; a step of forming, in the through-holes, through electrodes to be conductively connected with the probes, respectively; and a step of forming wiring, which is conductively connected with the through electrodes, on the other side of the board.Type: ApplicationFiled: January 16, 2015Publication date: May 7, 2015Applicant: ROHM CO., LTD.Inventors: Goro Nakatani, Masahiro Sakuragi, Koichi Niino
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Patent number: 8970242Abstract: Provided is a method for manufacturing a probe card which inspects electrical characteristics of a plurality of semiconductor devices in batch. The method includes: a step of forming a plurality of probes, which are to be brought into contact with external terminals of the semiconductor devices, on one side of a board which forms the base body of the probe card; a step of forming on the board, by photolithography and etching, a plurality of through-holes which reach the probes from the other side of the board; a step of forming, in the through-holes, through electrodes to be conductively connected with the probes, respectively; and a step of forming wiring, which is conductively connected with the through electrodes, on the other side of the board.Type: GrantFiled: September 29, 2009Date of Patent: March 3, 2015Assignee: Rohm Co, Ltd.Inventors: Goro Nakatani, Masahiro Sakuragi, Koichi Niino
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Publication number: 20140311249Abstract: A semiconductor pressure sensor (720) includes a thin film piezoelectric element (701) which applies strain to a portion of a semiconductor substrate that corresponds to a thin region (402). The thin film piezoelectric element (701) is formed at a distance away from diffusion resistors (406, 408, 410, and 412) functioning as strain gauges and is extended to the proximity of a bonding pad (716A) connected to an upper electrode layer of the thin film piezoelectric element and a bonding pad (716F) connected to a lower electrode thereof. The diffusion resistors (406, 408, 410, and 412) constitute a bridge circuit by metal wiring (722) and diffusion wiring (724). During self-diagnosis, a prescribed voltage is applied to a thin film piezoelectric element (701). If the output difference of the bridge circuit between before and after the voltage application falls outside a prescribed range, it is determined that a breakage occurs in the semiconductor pressure sensor (720).Type: ApplicationFiled: July 2, 2014Publication date: October 23, 2014Inventors: Nobuyuki Yamada, Masahiro Sakuragi, Takeshi Yoshida, Kei Hayashi
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Patent number: 8829630Abstract: [Subject] To provide a pressure sensor capable of implementing cost reduction and miniaturization. [Solving Means] A pressure sensor 1 includes a silicon substrate 2 provided therein with a reference pressure chamber 8, a diaphragm 10, consisting of part of the silicon substrate 2, formed on a surface layer portion of the silicon substrate 2 to partition a reference pressure chamber 8, and an etching stop layer 9 formed on a lower surface of the diaphragm 10 facing the reference pressure chamber 8. A through-hole 11 communicating with the reference pressure chamber 8 is formed on the diaphragm 10, and a filler 13 is arranged in the through-hole 11.Type: GrantFiled: May 25, 2011Date of Patent: September 9, 2014Assignee: Rohm Co., Ltd.Inventors: Masahiro Sakuragi, Toma Fujita, Mizuho Okada
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Patent number: 8770035Abstract: A semiconductor pressure sensor (720) includes a thin film piezoelectric element (701) which applies strain to a portion of a semiconductor substrate that corresponds to a thin region (402). The thin film piezoelectric element (701) is formed at a distance away from diffusion resistors (406, 408, 410, and 412) functioning as strain gauges and is extended to the proximity of a bonding pad (716A) connected to an upper electrode layer of the thin film piezoelectric element and a bonding pad (716F) connected to a lower electrode thereof. The diffusion resistors (406, 408, 410, and 412) constitute a bridge circuit by metal wiring (722) and diffusion wiring (724). During self-diagnosis, a prescribed voltage is applied to a thin film piezoelectric element (701). If the output difference of the bridge circuit between before and after the voltage application falls outside a prescribed range, it is determined that a breakage occurs in the semiconductor pressure sensor (720).Type: GrantFiled: July 12, 2010Date of Patent: July 8, 2014Assignee: Rohm Co., Ltd.Inventors: Nobuyuki Yamada, Masahiro Sakuragi, Takeshi Yoshida, Kei Hayashi
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Publication number: 20130062713Abstract: [Subject] To provide a pressure sensor capable of implementing cost reduction and miniaturization. [Solving Means] A pressure sensor 1 includes a silicon substrate 2 provided therein with a reference pressure chamber 8, a diaphragm 10, consisting of part of the silicon substrate 2, formed on a surface layer portion of the silicon substrate 2 to partition a reference pressure chamber 8, and an etching stop layer 9 formed on a lower surface of the diaphragm 10 facing the reference pressure chamber 8. A through-hole 11 communicating with the reference pressure chamber 8 is formed on the diaphragm 10, and a filler 13 is arranged in the through-hole 11.Type: ApplicationFiled: May 25, 2011Publication date: March 14, 2013Applicant: ROHM CO., LTD.Inventors: Masahiro Sakuragi, Toma Fujita, Mizuho Okada
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Publication number: 20120118068Abstract: A semiconductor pressure sensor (720) includes a thin film piezoelectric element (701) which applies strain to a portion of a semiconductor substrate that corresponds to a thin region (402). The thin film piezoelectric element (701) is formed at a distance away from diffusion resistors (406, 408, 410, and 412) functioning as strain gauges and is extended to the proximity of a bonding pad (716A) connected to an upper electrode layer of the thin film piezoelectric element and a bonding pad (716F) connected to a lower electrode thereof. The diffusion resistors (406, 408, 410, and 412) constitute a bridge circuit by metal wiring (722) and diffusion wiring (724). During self-diagnosis, a prescribed voltage is applied to a thin film piezoelectric element (701). If the output difference of the bridge circuit between before and after the voltage application falls outside a prescribed range, it is determined that a breakage occurs in the semiconductor pressure sensor (720).Type: ApplicationFiled: July 12, 2010Publication date: May 17, 2012Applicant: ROHM CO., LTD.Inventors: Nobuyuki Yamada, Masahiro Sakuragi, Takeshi Yoshida, Kei Hayashi
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Publication number: 20110175637Abstract: Provided is a method for manufacturing a probe card which inspects electrical characteristics of a plurality of semiconductor devices in batch. The method includes: a step of forming a plurality of probes, which are to be brought into contact with external terminals of the semiconductor devices, on one side of a board which forms the base body of the probe card; a step of forming on the board, by photolithography and etching, a plurality of through-holes which reach the probes from the other side of the board; a step of forming, in the through-holes, through electrodes to be conductively connected with the probes, respectively; and a step of forming wiring, which is conductively connected with the through electrodes, on the other side of the board.Type: ApplicationFiled: September 29, 2009Publication date: July 21, 2011Applicant: Rohm Co., Ltd.Inventors: Goro Nakatani, Masahiro Sakuragi, Koichi Niino
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Patent number: 7521747Abstract: AMOS transistor comprises: a first conduction type region; a second conduction type drain region formed on the outermost layer portion of the first conduction type region; a second conduction type source region formed on the outermost layer portion of the first conduction type region with a channel region provided between the second conduction type drain region and the second conduction type source region; agate electrode formed on the channel region; a second conduction type base region formed inside of the second conduction type drain region in plan elevation; a plurality of first conduction type emitter regions formed in the second conduction type base region on the outermost layer portion thereof at spatial intervals in a predetermined direction; and a drain contact connected to, as lying astride, adjacent two first conduction type emitter regions and that portion of the second conduction type drain region between these adjacent two first conduction type emitter regions.Type: GrantFiled: April 28, 2005Date of Patent: April 21, 2009Assignee: Rohm Co., Ltd.Inventors: Masahiro Sakuragi, Masahiko Sonoda
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Patent number: 7323750Abstract: A bipolar transistor is provided, which is low in collector-to-emitter saturation voltage, small in size and to be manufactured by a reduced number of processes, and a semiconductor device formed with such a bipolar transistor and a MOS transistor on a same substrate. A high concentration region for reducing the collector-to-emitter saturation voltage VCE(sat) is formed in a manner surrounding a base region of an NPN transistor. This high concentration region is not necessarily formed in such a depth as reaching a buried layer, and can be reduced in the spread in a lateral direction. Because a high concentration region can be formed in a same process as upon forming source and drain regions for an NMOS transistor to be formed together with an NPN transistor on a same silicon substrate, it is possible to omit a diffusion process exclusive for forming a high concentration region and hence to manufacture a semiconductor device through a reduced number of processes.Type: GrantFiled: March 14, 2005Date of Patent: January 29, 2008Assignee: Rohm Co., Ltd.Inventor: Masahiro Sakuragi