Abstract: Provided is a sputtering target which contains Na in high concentration and, despite this, is inhibited from discoloration, generating spots, and causing abnormal electrical discharge and which has high strength and rarely breaks. Also provided is a method for producing the sputtering target. The sputtering target has a component composition that contains 10 to 40 at % of Ga and 1.0 to 15 at % of Na as metal element components other than F, S, and Se, with the remainder composed of Cu and unavoidable impurities, wherein the Na is contained in the form of at least one Na compound selected from sodium fluoride, sodium sulfide, and sodium selenide. The sputtering target has a theoretical density ratio of 90% or higher, a flexural strength of 100 N/mm2 or higher, and a bulk resistivity of 1 m?·cm or less. The number of 0.05 mm2 or larger aggregates of the at least one of sodium fluoride, sodium sulfide, and sodium selenide present per cm2 area of the target surface is 1 or less on average.

Abstract: [Problems to be Solved] To provide a sputtering target that is capable of forming a Cu—Ga film to which Na is favorably added by a sputtering method, and a method for producing the same. [Means to Solve the Problems] The sputtering target is provided wherein 20 to 40 at % of Ga, 0.05 to 2 at % of Na, and 0.025 to 1.0 at % of S are contained and a remaining portion has a component composition consisting of Cu and unavoidable impurities. Also, a method for producing the sputtering target includes the step of hot pressing a mixed powder of Na2S powder and Cu—Ga alloy powder or a mixed powder of Na2S powder, Cu—Ga alloy powder, and pure Cu powder in a vacuum atmosphere or an inert gas atmosphere or sintering a mixed powder of Na2S powder and Cu—Ga alloy powder or a mixed powder of Na2S powder, Cu—Ga alloy powder, and pure Cu powder by hot isostatic pressing.

Abstract: The problem to be solved is to produce, at high yields with high purity, anhydrous crystals of a compound represented by formula (1) that is an important intermediate for preparation of FXa inhibitor compound (X) or a pharmacologically acceptable salt thereof, or a hydrate thereof. The solution thereto is an industrial preparation process that provides, with high purity, anhydrous crystals of a compound represented by the following formula (1), which is an intermediate for the production of FXa inhibitor compound (X) or a pharmacologically acceptable salt thereof, or a hydrate thereof, wherein Boc represents a tert-butoxycarbonyl group.

Abstract: An example portable information processing apparatus is configured to selectively execute one or more application programs and includes a memory storing first data associated with an application program executed by the information processing apparatus. A communication unit is configured for wireless communication and a data transmission/reception control unit is configured to transmit the first data for use by an application program which is executed by another information processing apparatus and with which the first data is associated and/or to receive second data, originating from another information processing apparatus, for use by an application program which is executed by the information processing apparatus and with which the second data is associated. The first data is transmitted and/or the second data is received regardless of an execution state on the information processing apparatus of any application program with which the first and second data are associated.

Abstract: When a portable information terminal operates in an unused state, a predetermined access point is searched for. As a result, when the predetermined access point is detected, a connection to the predetermined access point is established, and a predetermined data communication process is performed.

Abstract: A search for another information processing apparatus and an access point is performed. When a result of the search is the other portable information processing apparatus, a process of performing data communication with the other information processing apparatus is performed. On the other hand, when the result of the search is the access point, a process of performing data communication via the access point is performed.

Abstract: A search for another information processing apparatus and a predetermined access point is automatically performed. When a result of the search is the other portable information processing apparatus, a process of automatically performing data communication with the other information processing apparatus is performed. On the other hand, when the result of the search is the access point, a process of automatically performing data communication via the access point is performed.

Abstract: Provided are a sputtering target which has excellent machinability and is capable of forming a compound film that mainly contains Cu and Ga and a method for producing the sputtering target. The sputtering target of the present invention has a component composition that contains 15 to 40 at % of Ga, 0.1 to 5 at % of Bi, and the balance composed of Cu and unavoidable impurities with respect to all metal elements in the sputtering target. The method for producing the sputtering target includes a step of melting at least Cu, Ga and Bi as simple substances or an alloy that contains two or more of these elements at 1,050° C. or higher to produce an ingot.

Abstract: An object to save power and control engine startup and shutdown while improving the cabin environment with a simple configuration. A vehicular air-conditioning control device detects an outside air temperature; finds from an eco-running map a time TA until odor and so forth corresponding to the outside air temperature arises, an eco-runnable TB extended by shutting down a blower, and a time TC at which to shut down the operation of the blower fan; shuts down the blower fan at the time TC during eco-running; and, when the eco-runnable time TB elapses, causes the blower fan to operate, issues an engine startup request, and initiates refrigerant circulation by a compressor. Thus, by operating the blower fan for a predetermined time when the engine has been shut down by eco-running, the comfort of the cabin environment can be improved and the eco-runnable time can be extended to save power.

Abstract: Stored energy is evaluated for each of segmented regions, and using the evaluated stored energy, an optimal irradiation amount for an electron beam is evaluated by a conjugate gradient method. The evaluated stored energy is used instead of calculating a determinant (Apk) in the procedure that includes calculation of the determinant (Apk) from among repeated calculation procedures that follow the conjugate gradient method and seek to answer a simultaneous linear equation (Ax=b) with a matrix (A) as a coefficient. Thus it is possible to evaluate the optimal irradiation amount for an electron beam with a high processing speed and a high degree of accuracy, and without expressly requiring the calculation of Apk, by managing the giant matrix (A) comprising numerous factors according to reduction of lines of circuitry in a circuit pattern.

Abstract: Provided are a sputtering target which has excellent machinability and is capable of forming a compound film that mainly contains Cu and Ga and a method for producing the sputtering target. The sputtering target of the present invention has a component composition that contains 20 to 40 at % of Ga, 0.1 to 3 at % of Sb, and the balance composed of Cu and unavoidable impurities. A method for producing the sputtering target includes a step of producing a starting material powder that is obtained by pulverizing at least Cu, Ga and Sb as simple substances or an alloy that contains two or more of these elements; and a step of subjecting the starting material powder to hot processing in a vacuum, in an inert atmosphere or in a reducing atmosphere, wherein Ga is contained in the starting material powder in the form of a Cu—Ga alloy or in the form of a Ga—Sb alloy.

Abstract: Provided are a sputtering target that is capable of forming a Cu—Ga film, which has an added Ga concentration of 1 to 40 at % and into which Na is well added, by a sputtering method and a method for producing the sputtering target. The sputtering target has a component composition that contains 1 to 40 at % of Ga, 0.05 to 2 at % of Na as metal element components other than F, S and Se, and the balance composed of Cu and unavoidable impurities. The sputtering target contains Na in at least one form selected from among sodium fluoride, sodium sulfide, and sodium selenide, and has a content of oxygen of from 100 to 1,000 ppm.

Abstract: An exchange data communication determining unit determines, based on a received reception wireless frame, whether or not a communication partner is an exchange partner with which the exchange data can be exchanged. Receiving a notice that exchange of the exchange data is possible, a data communication control unit executes a process for giving/receiving the exchange data. A machine identification information registration unit stores an MAC address of a portable game machine in an MAC address list saving area. Again, the wireless frame transmitting/receiving unit sets a transmission wireless frame and executes an exchange partner searching process. An exchange data communication determining unit determines whether or not an MAC address included in the received reception wireless frame is registered with the MAC address list saving area, and if it is registered, the data communication is terminated.

Abstract: Stored energy is evaluated for each of segmented regions, and using the evaluated stored energy, an optimal irradiation amount for an electron beam is evaluated by a conjugate gradient method. The evaluated stored energy is used instead of calculating a determinant (Apk) in the procedure that includes calculation of the determinant (Apk) from among repeated calculation procedures that follow the conjugate gradient method and seek to answer a simultaneous linear equation (Ax=b) with a matrix (A) as a coefficient. Thus it is possible to evaluate the optimal irradiation amount for an electron beam with a high processing speed and a high degree of accuracy, and without expressly requiring the calculation of Apk, by managing the giant matrix (A) comprising numerous factors according to reduction of lines of circuitry in a circuit pattern.

Abstract: The problem to be solved is to produce, at high yields with high purity, anhydrous crystals of a compound represented by formula (1) that is an important intermediate for preparation of FXa inhibitor compound (X) or a pharmacologically acceptable salt thereof, or a hydrate thereof. The solution thereto is an industrial preparation process that provides, with high purity, anhydrous crystals of a compound represented by the following formula (1), which is an intermediate for the production of FXa inhibitor compound (X) or a pharmacologically acceptable salt thereof, or a hydrate thereof, wherein Boc represents a tert-butoxycarbonyl group.

Abstract: When a portable information terminal operates in an unused state, a predetermined access point is searched for. As a result, when the predetermined access point is detected, a connection to the predetermined access point is established, and a predetermined data communication process is performed.

Abstract: A machine tool tier machining a bar-shaped workpiece loaded in a first orientation includes first and second chucks, first and second driving parts, a machining tool and a control part. Each of the first and second chucks has a workpiece drop opening that opens toward the outside in a radial direction from a middle portion of the first or second chuck. The first and second driving parts are respectively provided to rotate the first and second chucks. The machining tool is configured to machine the workpiece clamped by at least one of the first and second chucks. The control part is configured to control clamping of the workpiece by the first and second chucks and to control rotation angles of the first and second chucks by the first and second driving parts to change an orientation of the workpiece from the first orientation to a second orientation.

Abstract: [Problems to be Solved] To provide a sputtering target that is capable of forming a Cu—Ga film to which Na is favorably added by a sputtering method, and a method for producing the same. [Means to Solve the Problems] The sputtering target is provided wherein 20 to 40 at % of Ga, 0.05 to 2 at % of Na, and 0.025 to 1.0 at % of S are contained and a remaining portion has a component composition consisting of Cu and unavoidable impurities. Also, a method for producing the sputtering target includes the step of hot pressing a mixed powder of Na2S powder and Cu—Ga alloy powder or a mixed powder of Na2S powder, Cu—Ga alloy powder, and pure Cu powder in a vacuum atmosphere or an inert gas atmosphere or sintering a mixed powder of Na2S powder and Cu—Ga alloy powder or a mixed powder of Na2S powder, Cu—Ga alloy powder, and pure Cu powder by hot isostatic pressing.

Abstract: A search for another information processing apparatus and a predetermined access point is automatically performed. When a result of the search is the other portable information processing apparatus, a process of automatically performing data communication with the other information processing apparatus is performed. On the other hand, when the result of the search is the access point, a process of automatically performing data communication via the access point is performed.

Abstract: In a variable valve actuation apparatus of an internal combustion engine configured to variably control at least a working angle of an engine valve, a valve actuation mechanism is configured to control a valve acceleration characteristic of the engine valve depending on an engine operating condition. The valve actuation mechanism is configured to bring about a first state where a maximum positive valve-closing acceleration of the engine valve becomes less than a maximum positive valve-opening acceleration of the engine valve, at a maximum working angle. The valve actuation mechanism is further configured so that a second state where the maximum positive valve-opening acceleration of the engine valve becomes less than the maximum positive valve-closing acceleration of the engine valve, exists at a working angle less than the maximum working angle.