Abstract: A communication device that communicates wirelessly receives, from a first another device, a predetermined signal to be transmitted before a connection with the first another device is established, a response to the predetermined signal being to be transmitted to the first another device when the communication device receives the predetermined signal, and controls, upon receiving the predetermined signal, a transmission timing of the response to the predetermined signal, based on communication that is executable by the communication device with a second another device that is a communication partner of the first another device.

Abstract: A communication device that performs communication wirelessly receives by using a first communication method, from a first another device, information regarding a condition for communication in a second communication method within a geographical range where communication with the first another device is possible, the second communication method being different from the first communication method, and selects a second another device that performs the communication in the second communication method, based on the information regarding the condition.

Abstract: Provided is a corrosion-resistant CuZn alloy, in which: the Zn content is 36.8 to 56.5 mass % and the balance is Cu and inevitable impurities; and the ?-phase surface area percentage is 99.9% or greater.

Abstract: A copper electrode material comprising Cu and unavoidable impurities, wherein the content of the unavoidable impurities is 1 ppm by mass or less and the average crystal grain diameter is 100 ?m or less. A copper-containing electrode material having improved corrosion resistance is provided by the copper electrode material.

Abstract: Provided is a corrosion-resistant CuZn alloy, in which: the Zn content is 36.8 to 56.5 mass % and the balance is Cu and inevitable impurities; and the ?-phase surface area percentage is 99.9% or greater.

Abstract: The present invention provides a corrosion-resistant CuZn alloy, the alloy having a Zn content of from 15 to 55% by mass, the balance being Cu and inevitable impurities, wherein a total content of Zn and Cu is 99.995% by mass or more, and wherein a number of pores is 1/cm2 or less based on optical microscopic observation.

Abstract: A negative-electrode active material comprises a graphite including boron and nitrogen. A ratio R1 satisfies 0.5?R1?1, where R1=SBN/SB, and SB denotes a total peak area of a boron 1s spectrum of the graphite obtained by X-ray photoelectron spectroscopy, and SBN denotes a peak area of a spectrum assigned to boron bonded to nitrogen in the boron 1s spectrum. A ratio R2 satisfies 0<R2?0.05, where R2=SB/(SB+SC+SN), and SC denotes a peak area of a carbon 1s spectrum of the graphite obtained by X-ray photoelectron spectroscopy, and SN denotes a peak area of a nitrogen 1s spectrum of the graphite obtained by X-ray photoelectron spectroscopy.

Abstract: A high-purity calcium and method of producing same are provided. The method includes performing first sublimation purification by introducing calcium starting material having a purity, excluding gas components, of 4N or less into a crucible of a sublimation vessel, subjecting the starting material to sublimation by heating at 750° C. to 800° C., and causing the product to deposit or evaporate onto the inside walls of the sublimation vessel; and then, once the calcium that has been subjected to first sublimation purification is recovered, performing second sublimation purification by introducing the recovered calcium again to the crucible to the sublimation vessel, heating the recovered calcium at 750° C. to 800° C., and causing the product to similarly deposit or evaporate on the inside walls of the sublimation vessel thereby recovering calcium having a purity of 4N5 or higher.

Abstract: A negative electrode active material for a nonaqueous secondary battery includes graphite containing boron. The graphite has an average discharge potential of 0.16 V or more and 0.2 V or less, based on Li. A nonaqueous secondary battery includes: a positive electrode including a positive electrode active material capable of occluding and releasing an alkali metal ion; a negative electrode including a negative electrode active material above; and a nonaqueous electrolyte solution.

Abstract: A negative-electrode active material comprises a graphite including boron and nitrogen. A ratio R1 satisfies 0.5?R1?1, where R1=SBN/SB, and SB denotes a total peak area of a boron 1s spectrum of the graphite obtained by X-ray photoelectron spectroscopy, and SBN denotes a peak area of a spectrum assigned to boron bonded to nitrogen in the boron 1s spectrum. A ratio R2 satisfies 0<R2?0.05, where R2=SB/(SB+SC+SN), and SC denotes a peak area of a carbon 1s spectrum of the graphite obtained by X-ray photoelectron spectroscopy, and SN denotes a peak area of a nitrogen 1s spectrum of the graphite obtained by X-ray photoelectron spectroscopy.

Abstract: Provided are high-purity yttrium and a high-purity yttrium sputtering target each having a purity, excluding rare earth elements and gas components, of 5 N or more and containing 1 wt ppm or less of each of Al, Fe, and Cu; a method of producing high-purity yttrium by molten salt electrolysis of a raw material being a crude yttrium oxide having a purity, excluding gas components, of 4N or less at a bath temperature of 500° C. to 800° C. to obtain yttrium crystals, desalting treatment, water washing, and drying of the yttrium crystals, and then electron beam melting for removing volatile materials to achieve a purity, excluding rare earth elements and gas components, of 5N or more; and a technology capable of efficiently and stably providing high-purity yttrium, a sputtering target composed of the high-purity yttrium, and a metal-gate thin film mainly composed of the high-purity yttrium.

Abstract: A method of purifying erbium is provided to produce a high-purity erbium having a purity of 5N or higher excluding rare earth elements and gas components, and containing Al, Fe, Cu, and Ta each in an amount of 1 wtppm or less, W in an amount of 10 wtppm or less, carbon in an amount of 150 wtppm or less, alkali metals and alkali earth metals each in an amount of 1 wtppm or less, other transition metal elements in a total amount of 10 wtppm or less, and U and Th as radioactive elements each in an amount of 10 wtppb or less. Erbium has a high vapor pressure and is difficult to refine in a molten state. The method provides technology for efficiently and stably providing high-purity erbium, a sputtering target made of high-purity erbium, and a metal gate film having high-purity erbium as a main component thereof.

Abstract: A high-purity calcium and method of producing same are provided. The method includes performing first sublimation purification by introducing calcium starting material having a purity, excluding gas components, of 4N or less into a crucible of a sublimation vessel, subjecting the starting material to sublimation by heating at 750° C. to 800° C., and causing the product to deposit or evaporate onto the inside walls of the sublimation vessel; and then, once the calcium that has been subjected to first sublimation purification is recovered, performing second sublimation purification by introducing the recovered calcium again to the crucible to the sublimation vessel, heating the recovered calcium at 750° C. to 800° C., and causing the product to similarly deposit or evaporate on the inside walls of the sublimation vessel thereby recovering calcium having a purity of 4N5 or higher.

Abstract: The present invention provides a method for producing high-purity calcium, the method being characterized by the following: performing first sublimation purification by introducing calcium starting material having a purity, excluding the gas components, of 4N or less into a crucible of a sublimation vessel, subjecting the starting material to sublimation by heating at 750° C. to 800° C., and causing the product to deposit (evaporate) onto the inside walls of the sublimation vessel; and then, once the calcium that has been subjected to first sublimation purification is recovered, performing second sublimation purification by introducing the recovered calcium again to the crucible to the sublimation vessel, heating the recovered calcium at 750° C. to 800° C.

Abstract: A photoelectric conversion element includes a photoanode that includes a solid semiconductor layer containing a dye molecule, a counter electrode, and an electrolyte medium disposed between the photoanode and the counter electrode. The dye molecule includes XD represented by chemical formula (1) and YA represented by chemical formula (2) in a molecule: R(XD/YA), which is a ratio of the number of XD to the number of YA in the dye molecule, is 2 or more.

Abstract: A method for producing high-purity lanthanum having a purity of 4N or more excluding rare earth elements other than lanthanum and gas components, wherein lanthanum having a purity of 4N or more is produced by reducing, with distilled calcium, a lanthanum fluoride starting material that has a purity of 4N or more excluding rare earth elements other than lanthanum and gas components, and the obtained lanthanum is subjected to electron beam melting to remove volatile substances. The method for producing high-purity lanthanum, in which Al, Fe, and Cu are respectively contained in the amount of 10 wtppm or less. The method for producing high-purity lanthanum, in which total content of gas components is 1000 wtppm or less. The present invention aims to provide a technique capable of efficiently and stably providing high-purity lanthanum, a sputtering target composed of high-purity lanthanum, and a thin film for metal gate that contains high-purity lanthanum as a main component.

Abstract: A photoelectric converter according to an aspect of the present disclosure comprises a photoanode including a semiconductor layer and a dye molecule located on the semiconductor layer, the dye molecule having a HOMO level nobler than +1.0 V measured against a Ag/Ag+ reference electrode; a counter electrode opposing the photoanode; and an electrolytic solution located between the photoanode and the counter electrode, the electrolytic solution containing a radical compound in which a carbon atom of one selected from the group consisting of an alkyl group and an alkylene group each having two or more carbon atoms is chemically bonded to the 4-position of a 2,2,6,6-tetramethylpiperidine 1-oxyl.

Abstract: The present invention addresses the problem of providing a technique capable of efficiently and stably providing a method for producing high-purity lanthanum, the method characterized in that: a crude lanthanum oxide starting material having a purity of 2N-3N, excluding gas components, is used; the material is subjected to molten salt electrolysis at a bath temperature of 450-700° C. to produce lanthanum crystals; the lanthanum crystals are subsequently desalted: and electron beam melting is then performed to remove volatile substances. The present invention also addresses the problem of providing a technique capable of efficiently and stably providing high-purity lanthanum, high-purity lanthanum itself, a sputtering target formed from high-purity material lanthanum; and a thin film for metal gates that has high purity lanthanum as the main component.

Abstract: A photoelectric conversion element includes a photoanode that includes a solid semiconductor layer containing a dye molecule, a counter electrode, and an electrolyte medium disposed between the photoanode and the counter electrode. The dye molecule includes XD represented by chemical formula (1) and YA represented by chemical formula (2): R(XD/YA), which is a ratio of a number of XD to a number of YA in the dye molecule, is 2 or more.

Abstract: Provided are high-purity lanthanum, wherein the purity excluding rare-earth elements and gas components is 4N or higher, and amounts of aluminum, iron and copper in the lanthanum are respectively 100 wtppm or less; as well as high-purity lanthanum, wherein the purity excluding rare-earth elements and gas components is 4N or higher, amounts of aluminum, iron and copper in the lanthanum are respectively 100 wtppm or less, oxygen content is 1500 wtppm or less, elements of alkali metals and alkali earth metals are respectively 1 wtppm or less, elements of transition metals and high-melting-point metals other than those above are respectively 10 wtppm or less, and radioactive elements are respectively 10 wtppb or less. The invention aims to provide technology capable of efficiently and stably providing high-purity lanthanum, a sputtering target comprising high-purity lanthanum, and a thin film for metal gate mainly comprising high-purity lanthanum.