Abstract: The present invention relates to a multifunctional lubricant composition which serves as a base oil for lubrication or as an additive for lubrication, including, with respect to 100 parts by mass of phosphorus compound (A) having a specific structure specified in the Description, 26 parts by mass to 43 parts by mass of phosphorus compound (B) having a specific structure specified in the Description, 0 parts by mass to 1.3 parts by mass of phosphorus compound (C) having a specific structure specified in the Description, and a total of 0 parts by mass to 1.3 parts by mass of triphenyl phosphate and tricresyl phosphate.

Abstract: A metal oxide thin film according to the present invention has a peak which is attributed to 1s electrons of nitrogen in a binding energy range of 402 eV to 405 eV in an XPS spectrum obtained by X-ray photoelectron spectroscopy, in which peak areas, which are obtained by separation of peaks having a peak energy of a metal-oxygen bond attributed to 1s electrons of oxygen, satisfy the following expression. 0.

Abstract: A thin film transistor includes a gate electrode; a gate insulating film which contacts the gate electrode; an oxide semiconductor layer which includes a first region represented by In(a)Ga(b)Zn(c)O(d), wherein 0<a?37/60, 3a/7?3/14?b?91a/74?17/40, b>0, 0<c?3/5, a+b+c=1, and d>0, and a second region represented by In(p)Ga(q)Zn(r)O(s), wherein q/(p+q)>0.250, p>0, q>0, r>0, and s>0, and located farther than the first region with respect to the gate electrode and which is arranged facing the gate electrode with the gate insulating film provided therebetween. A source electrode and a drain electrode are arranged so as to be apart from each other and are capable of being electrically conducted through the oxide semiconductor layer.

Abstract: A touch pad input device includes a movable element having an operation surface that serves as an upper surface, a first sensing unit for sensing a touch or proximity of an operating object on or to the operation surface, a stationary element disposed under the movable element, a rotation support mechanism rotatably supporting the movable element, a second sensing unit for sensing rotation of the movable element, and a retaining mechanism retaining the movable element. The rotation support mechanism includes fulcrum portions arranged on one of the movable element and the stationary element and abutment portions arranged on the other one of the movable element and the stationary element. The retaining mechanism is positioned under the movable element in an area covered by the operation surface when viewed from above. The retaining mechanism urges the movable element downward to hold the fulcrum portions in pressure contact with the abutment portions.

Abstract: The present invention relates to a flame retardant composition, including: at least one phosphorus compound represented by the following general formula (1) or (2); a cationic surfactant; and a nonionic surfactant: in the formula (1), A represents a divalent hydrocarbon group having 1 to 20 carbon atoms, n represents a number of from 1 to 10, and R1 to R8 each independently represent a hydrogen atom or an alkyl group having 1 to 20 carbon atoms; in the formula (2), R9 to R14 each independently represent a hydrogen atom or an alkyl group having 1 to 20 carbon atoms, and r1, r2, and r3 each independently represent a number of 1 or 0.

Abstract: A field effect transistor including: a gate insulating film; an oxide semiconductor layer that serves as an active layer and whose main structural elements are Sn, Zn and O, or Sn, Ga, Zn and O; and an oxide intermediate layer that is disposed between the gate insulating film and the oxide semiconductor layer, and whose resistivity is higher than that of the oxide semiconductor layer.

Abstract: A method of fabricating a thin-film transistor, the method including: film-forming an active layer, that contains as a main component thereof an oxide semiconductor structured by O and at least two elements among In, Ga and Zn, in a film formation chamber into which at least oxygen is introduced, and b) heat treating the active layer at less than 300° C. in a dry atmosphere, wherein the film-forming a) and the heat treating are carried out such that, given that an oxygen partial pressure with respect to an entire pressure of an atmosphere within the film formation chamber in the film-forming is PO2depo (%), and an oxygen partial pressure with respect to an entire pressure of an atmosphere during the heat treating is PO2anneal (%), the oxygen partial pressure PO2anneal (%) at the time of the heat treating b) satisfies a relationship: ?20/3PO2depo+40/3?PO2anneal??800/43PO2depo+5900/43.

Abstract: Provided is a metal oxide film, including a component having a peak position, in an XPS spectrum thereof, within a range corresponding to a binding energy of from 402 eV to 405 eV, the metal oxide film satisfying a relationship represented by Equation (1): A/(A+B)?0.39, when an intensity of peak energy attributed to nitrogen 1s electron is obtained by peak separation, and a manufacturing method of the same, an oxide semiconductor film, a thin-film transistor, a display apparatus, an image sensor, and an X-ray sensor. In Equation (1), A represents a peak area of the component having a peak position within a range corresponding to a binding energy of from 402 eV to 405 eV, and B represents a peak area of a component having a peak position within a range corresponding to a binding energy of from 406 eV to 408 eV.

Abstract: A connection portion extends from an operation substrate, and a retaining groove of an elastic body is retained in a retaining hole of the connection portion. When a shaft portion of a retaining member is inserted into a through hole of the elastic body and screwed into an internally-threaded hole of a panel, an upper elastic portion of the elastic body is interposed between the connection portion and a support portion of the panel, and a lower elastic portion of the elastic body is interposed between the connection portion and an facing member. When an operation surface of the operation substrate is pressed, the connection portion rotates in a direction and the upper elastic portion and the lower elastic portion of the elastic body are compressed, whereby an appropriate operation reaction force and an elastic return force can be exerted.

Abstract: There is provided a method of manufacturing a semiconductor element including: forming a semiconductor film of which a principal constituent is an oxide semiconductor; forming a first insulation film on a surface of the semiconductor film; applying a heat treatment in an oxidizing atmosphere; and, forming a second insulation film on a surface of the first insulation film, wherein a thickness of the first insulation film and a temperature of the heat treatment in the third step are adjusted such that, if the thickness of the first insulation film is represented by Z (nm), the heat treatment temperature is represented by T (° C.) and a diffusion distance of oxygen into the first insulation film and the semiconductor film is represented by L (nm), the relational expression 0<Z<L=8×10?6×T3?0.0092×T2+3.6×T?468±0.1 is satisfied.

Abstract: The purpose of the present invention is to provide an additive for lubricating oil, which does not substantially contain metal elements or the like and is safe but which demonstrates extreme pressure performance equivalent to conventional extreme pressure agents each containing a metal element when used in lubricating applications. In order to achieve the above-mentioned purpose, the present invention provides a friction and wear reducing agent for lubricating oil consisting of a copolymer (A) comprising an alkyl acrylate (a) represented by the following general formula (1) and a hydroxyalkyl acrylate (b) represented by the following general formula (2) as essential constituent monomers, wherein the constitutive ratio of (a) to (b) is 50/50 to 90/10 (molar ratio) and the weight average molecular weight thereof is 2,000 to less than 40,000.

Abstract: An oscillator-type switch includes a base, an elastic member mounted on the base and flexible in an up-down direction, an oscillation member having a base portion mounted on the elastic member and a driving section connected from the base portion in a first horizontal direction along an upper surface of the base, a key top set on the oscillation member, a reversal spring applying a reaction force to a downward movement of the driving section, and a pressure-sensitive switch sheet detecting the downward movement of the driving section. The elastic member is arranged for a center line in the first horizontal direction within a range in which the elastic member is mounted on the oscillation member to be positioned outside a projection area of the operation unit in the first horizontal direction.

Abstract: A touch pad input device includes a movable element having an operation surface that serves as an upper surface, a first sensing unit for sensing a touch or proximity of an operating object on or to the operation surface, a stationary element disposed under the movable element, a rotation support mechanism rotatably supporting the movable element, a second sensing unit for sensing rotation of the movable element, and a retaining mechanism retaining the movable element. The rotation support mechanism includes fulcrum portions arranged on one of the movable element and the stationary element and abutment portions arranged on the other one of the movable element and the stationary element. The retaining mechanism is positioned under the movable element in an area covered by the operation surface when viewed from above. The retaining mechanism urges the movable element downward to hold the fulcrum portions in pressure contact with the abutment portions.

Abstract: A method of producing a thin film transistor includes: forming a gate electrode; forming a gate insulating film that contacts the gate electrode; forming, by a liquid phase method, an oxide semiconductor layer arranged facing the gate electrode with the gate insulating film provided therebetween, the oxide semiconductor layer including a first region and a second region, the first region being represented by In(a)Ga(b)Zn(c)O(d), the second region being represented by In(e)Ga(f)Zn(g)O(h), and the second region being located farther from the gate electrode than the first region; and forming a source electrode and a drain electrode that are arranged apart from each other and are capable of being conductively connected through the oxide semiconductor layer.

Abstract: There is provided a method of fabricating a field effect transistor including: forming a first oxide semiconductor film on a gate insulation layer disposed on a gate electrode; forming a second oxide semiconductor film on the first oxide semiconductor film, the second oxide semiconductor film differing in cation composition from the first oxide semiconductor film and being lower in electrical conductivity than the first oxide semiconductor film; applying a heat treatment at over 300° C. in an oxidizing atmosphere; forming a third oxide semiconductor film on the second oxide semiconductor film, the third oxide semiconductor film differing in cation composition from the first oxide semiconductor film and being lower in electrical conductivity than the first oxide semiconductor film; applying a heat treatment in an oxidizing atmosphere; and, forming a source electrode and a drain electrode on the third oxide semiconductor film.

Abstract: A thin film transistor includes a gate electrode; a gate insulating film which contacts the gate electrode; an oxide semiconductor layer which includes a first region represented by In(a) Ga(b) Zn(c) O(d), wherein 0<a?37/60, 3a/7?3/14?b?91a/74?17/40, b>0, 0<c<3/5, a+b+c=1, and d>0, and a second region represented by In(p) Ga(q) Zn(r) O(s), wherein q/(p+q)>0.250, p>0, q>0, r>0, and s>0, and located farther than the first region with respect to the gate electrode and which is arranged facing the gate electrode with the gate insulating film provided therebetween; and a source electrode and a drain electrode which are arranged so as to be apart from each other and are capable of being electrically conducted through the oxide semiconductor layer.

Abstract: There is provided a method of fabricating a field effect transistor including: forming a first oxide semiconductor film on a gate insulation layer disposed on a gate electrode; forming a second oxide semiconductor film on the first oxide semiconductor film, the second oxide semiconductor film differing in cation composition from the first oxide semiconductor film and being lower in electrical conductivity than the first oxide semiconductor film; applying a heat treatment at over 300° C. in an oxidizing atmosphere; forming a third oxide semiconductor film on the second oxide semiconductor film, the third oxide semiconductor film differing in cation composition from the first oxide semiconductor film and being lower in electrical conductivity than the first oxide semiconductor film; applying a heat treatment in an oxidizing atmosphere; and, forming a source electrode and a drain electrode on the third oxide semiconductor film.

Abstract: There is provided a method of manufacturing a semiconductor element including: forming a semiconductor film of which a principal constituent is an oxide semiconductor; forming a first insulation film on a surface of the semiconductor film; applying a heat treatment in an oxidizing atmosphere; and, forming a second insulation film on a surface of the first insulation film, wherein a thickness of the first insulation film and a temperature of the heat treatment in the third step are adjusted such that, if the thickness of the first insulation film is represented by Z (nm), the heat treatment temperature is represented by T (° C.) and a diffusion distance of oxygen into the first insulation film and the semiconductor film is represented by L (nm), the relational expression 0<Z<L=8×10?6×T3?0.0092×T2+3.6×T?468±0.1 is satisfied.

Abstract: A thin-film transistor including an oxide semiconductor layer is disclosed. The oxide semiconductor layer includes a first area, a second area and a third area forming a well-type potential in the film-thickness direction. The first area forms a well of the well-type potential and has a first electron affinity. The second area is disposed nearer to the gate electrode than the first area and has a second electron affinity smaller than the first electron affinity. The third area is disposed farther from the gate electrode than the first area and has a third electron affinity smaller than the first electron affinity. At least an oxygen concentration at the third area is lower than an oxygen concentration at the first area.

Abstract: A field effect transistor including: a gate insulating film; an oxide semiconductor layer that serves as an active layer and whose main structural elements are Sn, Zn and O, or Sn, Ga, Zn and O; and an oxide intermediate layer that is disposed between the gate insulating film and the oxide semiconductor layer, and whose resistivity is higher than that of the oxide semiconductor layer.