Abstract: The present invention is to provide a copolymer obtainable by polymerizing a monomer mixture containing at least compounds of the following formulae (A) and (B) (wherein Ta, Tb, Qa, Qb, Ra, Rb, Ua1, Ua2, Ua3, Ub1, Ub2, Ub3, An? and m are as defined in the present specification and Claims), etc. The copolymer of the present invention can be utilized as an ion complex material excellent in a function of inhibiting adhesion of a biological substance.

Abstract: A film-forming composition having favorable effects such as curability and embeddability and resist underlayer film for use in lithography process for semiconductor devices.

Abstract: The object of the present invention is to provide resist underlayer film-forming composition for forming resist underlayer film usable as hard mask and removable by wet etching process using chemical solution such as sulfuric acid/hydrogen peroxide. A resist underlayer film-forming composition for lithography comprises a component (A) and component (B), the component (A) includes a hydrolyzable silane, hydrolysis product thereof, or hydrolysis-condensation product thereof, the hydrolyzable silane includes hydrolyzable silane of Formula (1):R1aR2bSi(R3)4?(a+b) (where R1 is organic group of Formula (2): and is bonded to silicon atom through a Si—C bond; R3 is an alkoxy group, acyloxy group, or halogen group; is an integer of 1; b is an integer of 0 to 2; and a+b is an integer of 1 to 3), and the component (B) is cross-linkable compound having ring structure having alkoxymethyl group or hydroxymethyl group, cross-linkable compound having epoxy group or blocked isocyanate group.

Abstract: A method of producing a silicon hydride oxide-containing organic solvent (coating solution) is provided with which a silicon hydride oxide coating film can be formed on a substrate. Using the silicon hydride oxide-containing organic solvent makes it unnecessary to place a coating solution in non-oxidizing atmosphere at the time of coating or to heat the substrate after coating because the silicon hydride oxide is formed in the coating solution before it is coated. The method includes blowing an oxygen-containing gas through an organic solvent containing a silicon hydride or a polymer thereof. The silicon hydride oxide may contain a proportion of (residual Si—H groups)/(Si—H groups before oxidation) of 1 to 40 mol %. The silicon hydride can be obtained by reacting a cyclic silane with a hydrogen halide in the presence of an aluminum halide, and reducing the obtained cyclic halosilane.

Abstract: A polymerization inhibitor for a silane enables purification of the silane to a high degree because a polymer is not formed even when heating to distill the silane, even when a cyclic silane monomer is present. A high-purity cyclic silane composition is obtained, in particular high-purity cyclopentasilane, that can be polymerized and applied onto a substrate as a coating-type polysilane composition and fired to produce a good silicon thin film with high conductivity. The polymerization inhibitor includes a secondary or tertiary aromatic amine. The aromatic group is a phenyl group or a naphthyl group. The polymerization inhibitor is present in a proportion of 0.01 to 10 mol % per mole of the silane. In the polymerization inhibitor, a boiling point of the aromatic amine is 196° C. or higher.

Abstract: There is provided a highly conductive and good silicon thin film which is obtained by applying a coating-type polysilane composition prepared by use of a polysilane having a large weight average molecular weight to a substrate, followed by baking. A polysilane having a weight average molecular weight of 5,000 to 8,000. The polysilane may be a polymer of cyclopentasilane. A silicon film obtained by applying a polysilane composition in which the polysilane is dissolved in a solvent to a substrate, and baking the substrate at 100° C. to 425° C. The cyclopentasilane may be polymerized in the presence of a palladium catalyst supported on a polymer. The palladium catalyst supported on a polymer may be a catalyst in which palladium as a catalyst component is immobilized on a functional polystyrene. The palladium may be a palladium compound or a palladium complex.

Abstract: There is provided a cyclic silane having high purity, particularly cyclopentasilane having high purity, and a composition containing a polysilane obtained by polymerization of the cyclic silane which a highly conductive and good silicon thin film is formed by applying the composition in a form of a coating-type polysilane composition to a substrate, followed by baking.

Abstract: A light emitting device 100 has a structure in which a p type InGaAs layer 7 as an electrode contact layer and an ITO electrode layer 8 as an oxide transparent electrode layer are formed in the order in a first major surface 17 side of a light emitting layer section 24. In a second major surface 18 side of the light emitting layer section 24, an n type InGaAs layer 9 as an electrode contact layer and an ITO electrode layer 10 as an oxide transparent electrode layer are formed in the order. The ITO electrode layers 8 and 10 together with the p type InGaAs layer 7 and the n type InGaAs layer 9 are formed on the respective both major surfaces 17 and 18 of the light emitting layer section 24 so as to cover the respective both major surfaces 17 and 18 in the entirety thereof.

Abstract: A GaAsP-base light emitting element capable of sustaining an excellent light emission property for a long period, and a method for manufacturing thereof are provided. The light emitting element 1 has a p-n junction interface responsible for light emission formed between a p-type GaAs1-aPa layer 9 and an n-type GaAs1-aPa layer 8, and has a nitrogen-doped zone 8c formed in a portion including the p-n junction interface between such p-type GaAs1-aPa layer 9 and n-type GaAs1-aPa layer 8. Such element can be manufactured by fabricating a plurality of light emitting elements by varying nitrogen concentration Y of the nitrogen-doped zone 8c while keeping a mixed crystal ratio a of the p-type GaAs1- aPa layer 9 and n-type GaAs1-aPa layer 8 constant; finding an emission luminance/nitrogen concentration relationship by measuring emission luminance of the individual light emitting elements; and adjusting the nitrogen concentration of the nitrogen-doped zone 8c so as to fall within a range from 1.05Yp to 1.

Abstract: A light emitting device 100 has a structure in which a p type InGaAs layer 7 as an electrode contact layer and an ITO electrode layer 8 as an oxide transparent electrode layer are formed in the order in a first major surface 17 side of a light emitting layer section 24. In a second major surface 18 side of the light emitting layer section 24, an n type InGaAs layer 9 as an electrode contact layer and an ITO electrode layer 10 as an oxide transparent electrode layer are formed in the order. The ITO electrode layers 8 and 10 together with the p type InGaAs layer 7 and the n type InGaAs layer 9 are formed on the respective both major surfaces 17 and 18 of the light emitting layer section 24 so as to cover the respective both major surfaces 17 and 18 in the entirety thereof.

Abstract: A GaAsP-base light emitting element capable of sustaining an excellent light emission property for a long period, and a method for manufacturing thereof are provided. The light emitting element 1 has a p-n junction interface responsible for light emission formed between a p-type GaAs1-aPa layer 9 and an n-type GaAs1-aPa layer 8, and has a nitrogen-doped zone 8c formed in a portion including the p-n junction interface between such p-type GaAs1-aPa layer 9 and n-type GaAs1-aPa layer 8. Such element can be manufactured by fabricating a plurality of light emitting elements by varying nitrogen concentration Y of the nitrogen-doped zone 8c while keeping a mixed crystal ratio a of the p-type GaAs1-aPa layer 9 and n-type GaAs1-aPa layer 8 constant; finding an emission luminance/nitrogen concentration relationship by measuring emission luminance of the individual light emitting elements; and adjusting the nitrogen concentration of the nitrogen-doped zone 8c so as to fall within a range from 1.05Yp to 1.

Abstract: A GaAsP epitaxial wafer 10 which has a GaAs.sub.1-x P.sub.x (0.45<x<1) constant nitrogen concentration layer 6 formed by doping a constant composition layer with nitrogen wherein the constant nitrogen concentration layer 6 has the following upper and lower limits of nitrogen concentration:Upper limit: N=(6.25x-1.125).times.10.sup.18 cm.sup.-3Lower limit: N=(5x-1.5).times.10.sup.18 cm.sup.

Abstract: A method for a vapor-phase growth of a GaAs.sub.1-x P.sub.x epitaxial layer having a uniform thickness is disclosed. This method allows the GaAs.sub.1-x P.sub.x epitaxial layer (wherein x stands for an alloy composition satisfying the expression, 0.ltoreq.x.ltoreq.1) to be formed on a plurality of semiconductor single crystal substrates 1 by setting the semiconductor single crystal substrates 1 in place on a wafer holder 16 disposed inside a vapor-phase growth apparatus 30 in an amount of not less than 70% as the covering ratio of the total surface area of the substrates to the surface area of the wafer holder 16.

Abstract: A GaP pure green light emitting element substrate comprising an n-type GaP layer 12 and a p-type GaP layer 14 formed on a GaP single crystal substrate 10, characterized by the fact that an intermediate GaP layer 13 is formed at the pn junction portion between said n-type GaP layer 12 and said p-type GaP layer 14, wherein said intermediate GaP layer has a donor concentration N.sub.D of less than 1.times.10.sup.-16 atoms/cm.sup.3 and an acceptor concentration N.sub.A nearly equal to the donor concentration N.sub.D. The thickness of the intermediate GaP layer 13 is in the range of 3-5 micrometers.

Abstract: A method and an apparatus capable of efficiently producing an epitaxial layer grown at one time on a multiplicity of substrates with uniform thickness and quality are disclosed, in which a sealable growth chamber filled in a solution used to achieve liquid-phase epitaxial growth and holding therein at least one row of thin plate-like substrate is turned about the horizontal axis. The growth chamber is tilted or overturned so that the solution in the growth chamber is stirred homogeneously and the effect of gravity on the solution is excluded. A solution chamber for holding therein the solution is connected with the growth chamber via a gate valve. After the liquid-phase epitaxial growth, the growth chamber is overturned and then the gate valve is opened so that the solution in the growth chamber returns to the solution chamber. Thus, reuse of the solution is possible.

Abstract: To manufacture epitaxial wafers with a smaller amount of semiconductor crystals at a lower cost by means of an efficient epitaxial growth process. An epitaxial wafer is made by forming, by means of epitaxial growth, GaAlAs layers with identical structures on both sides of a GaAs substrate wafer with the crystal plane orientation of {100}. The epitaxial wafer is then divided in the GaAs substrate wafer portion into two pieces to obtain two epitaxial wafers. To perform the epitaxial growth process, a plurality of GaAs substrate wafers are held at their edges and then the GaAs substrate wafers are placed in a Ga solution at prescribed spatial intervals. To divide the epitaxial wafer in the GaAs substrate portion into two pieces, the substrate wafer portion is cut parallel to the main surface. Or, the GaAs substrate wafer can also be removed by means of etching while the epitaxial wafer is rotated at a high speed in the etching solution.

Abstract: An epitaxial wafer of gallium phosphide single crystal having an epitaxial layer of gallium phosphide arsenide mixed crystal grown on the surface by the method of vapor-phase epitaxial growth can be freed from surface defects and greatly improved in respect of the electroluminescent intensity of the light-emitting diode prepared therefrom, yield of the light-emitting diodes which can be obtained from said single epitaxial wafer the growth rate of the epitaxial layer when the substrate wafer has a crystallographic surface plane which is inclined from the {001} plane in the <110> direction by 8.degree. to 15.degree. or a crystallographically equivalent plane thereto.