Abstract: In a method of producing a semiconductor device, an a-Si film is crystallized using nickel to form a CGS film. Then, an a-Si film containing phosphorus is directly formed on the whole surface of the CGS film, and then the CGS film and the a-Si film are subjected to heat treatment to thereby getter the nickel from the CGS film the a-Si film. The a-Si film containing nickel and phosphorus is removed. Then, using the thus obtained CGS film for an active region, a thin-film transistor is formed.

Abstract: On a metallic wiring substrate, a first metallic layer is connected to a second metallic layer at a non-anodic-oxide section of the first metallic layer exposed at a bottom of a contact hole. The surface of the first metallic layer is anodically oxidized except for the non-anodic-oxide section. After resist is patterned so as to be entirely positioned on the surface of the first metallic layer, the first metallic layer is anodically oxidized, and the resist is removed therefrom. In such a manner, the non-anodic oxide section and the anodic oxide section are formed. This method makes it possible to produce the metallic wiring substrate having good insulation properties between layers easier than a method for forming the non-anodic-oxide section by etching the anodic oxide section.

Abstract: An object of the invention is to economically and easily manufacture a thin film diode of back-to-back connection type having a symmetric voltage-ampere characteristic. First conducting layers of a metallic circuit board to become a wiring and an island conductor, respectively, are electrically connected with each other via a second conducting layer. The first conducting layers are electrically isolated from each other by anodizing the second conducting layer. An anodized insulating layer is formed by oxidized parts of the first conducting layers and the oxidized second conducting layer. The not-anodized part of one of the first conducting layers becomes a wiring and the not-anodized part of the other of the first conducting layers becomes an island conductor. The island conductor is considered as a first conductor and second and third conductors are formed on the anodized insulating layer on the first conductor. Thereby, a two-terminal element of a back-to-back type is completed.