Abstract: Provided are a semiconductor device, a busbar, and a power converter that can suppress an increase in the size of the device and in inductance while ensuring insulation performance between terminals. For example, a semiconductor device 1 includes a first terminal 110 projecting from a sealing body 100 along a given direction, and a second terminal 120 adjacent to the first terminal 110 with a space formed between the second terminal 120 and the first terminal 110, the second terminal 120 projecting from the sealing body 100 along a given direction in a direction of projection that is the same as a direction of projection of the first terminal 110. The first terminal 110 has a first exposed part 112 exposed outside the sealing body 100.

Abstract: A sheet-shaped member 440 including a resin insulating layer 441 and a metal foil 442 is used. The sheet-shaped member 440 is deformed following warpage or step difference in a second conductor plate 431 and a fourth conductor plate 433, and therefore, the thickness of the resin insulating layer 441 can be set to a constant thickness of, for example, 120 ?m capable of securing insulation properties. By plastically deforming a metal-based heat conduction member 450 having a thickness of, for example, 120 ?m interposed between the sheet-shaped member 440 and a cooling member 340, the thickness of the metal-based heat conduction member 450 is changed to absorb the warpage or step difference generated in the second conductor plate 431 and the fourth conductor plate 433. This results in remarkable improvement in heat dissipation as compared with a case where the conductor plates are brought into contact with the cooling member 340 via an insulating layer alone.

Abstract: A skyrmion generation method capable of reducing power consumption in generating skyrmions is provided. In the skyrmion generation method, an electric field is applied to an insulating magnetic body having a chiral crystal structure locally using an electric field generation unit while a magnetic field is applied from a magnetic field generation unit to the magnetic body. As a result, a skyrmion is generated in the magnetic body. The magnetic body preferably has a thin film shape with a thickness in a range of 2 to 300 nm at least partially, and the magnetic field generation unit preferably applies the magnetic field to a surface of the magnetic body substantially perpendicularly.

Abstract: A skyrmion generation method capable of reducing power consumption in generating skyrmions is provided. In the skyrmion generation method, an electric field is applied to an insulating magnetic body having a chiral crystal structure locally using an electric field generation unit while a magnetic field is applied from a magnetic field generation unit to the magnetic body. As a result, a skyrmion is generated in the magnetic body. The magnetic body preferably has a thin film shape with a thickness in a range of 2 to 300 nm at least partially, and the magnetic field generation unit preferably applies the magnetic field to a surface of the magnetic body substantially perpendicularly.

Abstract: A water jet peening method in which a pressurized water jet flow containing cavities is jetted through a nozzle having a velocity increasing orifice portion and a horn-like jetting hole formed continuously with the velocity increasing orifice portion to impinge against a surface of a metallic material immersed in water and to cause the cavities to collapse at the surface of the metallic member, and a tensile plastic deformation is caused in a surface layer of the metallic material by a local high pressure generated by the impingement and the collapse so that a residual tensile stress in the surface of the metallic member is reduced. In this method, the nozzle is vibrated so that vibration-induced cavities are formed in the vicinity of a nozzle wall surface, and the vibration-induced cavities are caused to impinge against the surface of the metallic member by the pressurized water jet flow containing cavities.