Abstract: There is provided a processing apparatus for forming a film with a plasma. The processing apparatus comprises: a processing container, having a ceramic sprayed coating on an inner wall on which an antenna that radiates microwaves is arranged, configured to accommodate a substrate; a mounting table configured to mount the substrate in the processing container; and a controller configured to perform a precoating process of coating a surface of the ceramic sprayed coating with a first carbon film with a plasma of a first carbon-containing gas at a first pressure and a film forming process of forming a second carbon film on the substrate with a plasma of a second carbon-containing gas at a second pressure.

Abstract: A method of pre-coating a carbon film by plasma in a processing container, includes: pre-coating an inner wall of the processing container with a first carbon film by plasma of a first carbon-containing gas under a first pressure; and processing the first carbon film with the plasma under a second pressure.

Abstract: The present disclosure provides a technique capable of controlling a shape of an SAM. Provided is a method of forming a target film on a substrate, wherein the method includes preparing a substrate including a layer of a first conductive material formed on a surface of a first region, and a layer of an insulating material formed on a surface of a second region; forming carbon nanotubes on a surface of the layer of the first conductive material; and supplying a raw material gas for a self-assembled film to form the self-assembled film in a region of the surface of the layer of the first conductive material in which the carbon nanotubes have not been formed.

Abstract: A film forming method of forming a carbon film includes: cleaning an interior of a processing container by using oxygen-containing plasma in a state in which no substrate is present inside the processing container; subsequently, extracting and removing oxygen inside the processing container by using plasma in the state in which no substrate is present inside the processing container; and subsequently, loading a substrate into the processing container and forming the carbon film on the substrate through plasma CVD using a processing gas including a carbon-containing gas, wherein the cleaning, the extracting and removing the oxygen, and the forming the carbon film are repeatedly performed.

Abstract: There is provided a processing apparatus for forming a film with a plasma. The processing apparatus comprises: a processing container, having a ceramic sprayed coating on an inner wall on which an antenna that radiates microwaves is arranged, configured to accommodate a substrate; a mounting table configured to mount the substrate in the processing container; and a controller configured to perform a precoating process of coating a surface of the ceramic sprayed coating with a first carbon film with a plasma of a first carbon-containing gas at a first pressure and a film forming process of forming a second carbon film on the substrate with a plasma of a second carbon-containing gas at a second pressure.

Abstract: A method of forming a graphene structure, includes: providing a substrate; performing a preprocessing by supplying a first processing gas including a carbon-containing gas to the substrate while heating the substrate, without using plasma; and after the preprocessing, forming the graphene structure on a surface of the substrate through a plasma CVD using plasma of a second processing gas including a carbon-containing gas.

Abstract: A method for forming a hexagonal boron nitride film comprises: providing a substrate; and generating plasma of a boron-containing gas and a nitrogen-containing gas in a plasma generation region located at a position apart from the substrate to form the hexagonal boron nitride film on the surface of the substrate by plasma CVD using plasma diffused from the plasma generation region.

Abstract: There is provided a semiconductor device including a first conductive layer formed on a substrate; a second conductive layer serving as a wiring layer and a barrier layer provided between the first conductive layer and the second conductive layer, wherein the barrier layer is made of a graphene film, and the second conductive layer includes a metal silicide compound, the metal silicide compound being provided so as to be in contact with the graphene film constituting the barrier layer.

Abstract: There is provided a film forming method of forming a carbon-containing film by a microwave plasma from a microwave source, the film forming method including: a dummy step of performing a dummy process by generating plasma of a first carbon-containing gas within a processing container; a placement step of placing a substrate on a stage within the processing container; and a film forming step of forming the carbon-containing film on the substrate using plasma of a second carbon-containing gas.

Abstract: There is provided a semiconductor device including a first conductive layer formed on a substrate; a second conductive layer serving as a wiring layer and a barrier layer provided between the first conductive layer and the second conductive layer, wherein the barrier layer is made of a graphene film, and the second conductive layer includes a metal silicide compound, the metal silicide compound being provided so as to be in contact with the graphene film constituting the barrier layer.

Abstract: A method for forming carbon nanotubes includes preparing a target object having a surface on which one or more openings are formed, each of the openings having a catalyst metal layer on a bottom thereof; performing an oxygen plasma process on the catalyst metal layers; and activating the surfaces of the catalyst metal layers by performing a hydrogen plasma process on the metal catalyst layers subjected to the oxygen plasma process. The method further includes filling carbon nanotubes in the openings on the target object by providing an electrode member having a plurality of through holes above the target object in a processing chamber, and then growing the carbon nanotubes by plasma CVD on the activated catalyst metal layer by diffusing active species in a plasma generated above the electrode member toward the target object through the through holes while applying a DC voltage to the electrode member.

Abstract: A processing machine for performing a bending operation on a workpiece includes a die, a punch movable in a first direction for pressing the workpiece against the die, a slide member movable in a second direction perpendicular to the first direction, a first cam device that moves the punch toward the die for deforming the workpiece when being actuated by movement of the slide member, a second cam device that moves the punch for pressing a surface of the workpiece when being actuated by movement of the slide member. The pressure angle of the second cam device is smaller than a pressure angle of the first cam device. The processing machine further includes a drive member configured to move the slide member such that the second cam device is actuated after the first cam device is actuated.

Abstract: An object is to find a target molecule effective for cancer treatments and the like and to provide an antibody capable of specifically binding to the molecule, an anticancer agent comprising the antibody as an active ingredient, and so forth. Hence, prostate cancer cell lines (LNCaP-CR cells and LNCaP cells) were compared by SST-REX, and CXADR was identified as a molecule involved in tumor formation and so on. Then, a monoclonal antibody against CXADR was prepared, and the anti-cancer activity, ADCC activity, CDC activity, and so forth were examined. The result revealed that an antibody capable of binding to an epitope present at positions 181 to 230 of a CXADR protein derived from human exhibited an anti-cancer activity against prostate cancer cells, pancreatic cancer cells, and colorectal cancer cells. Further, it was also revealed that the antibody had an ADCC activity and a CDC activity. Moreover, the structures of light chain and heavy chain variable regions of the antibody were successfully determined.

Abstract: A method for forming carbon nanotubes includes preparing a target object having a surface on which one or more openings are formed, each of the openings having a catalyst metal layer on a bottom thereof; performing an oxygen plasma process on the catalyst metal layers; and activating the surfaces of the catalyst metal layers by performing a hydrogen plasma process on the metal catalyst layers subjected to the oxygen plasma process. The method further includes filling carbon nanotubes in the openings on the target object by providing an electrode member having a plurality of through holes above the target object in a processing chamber, and then growing the carbon nanotubes by plasma CVD on the activated catalyst metal layer by diffusing active species in a plasma generated above the electrode member toward the target object through the through holes while applying a DC voltage to the electrode member.

Abstract: A processing machine for performing a bending operation on a workpiece includes a die, a punch movable in a first direction for pressing the workpiece against the die, a slide member movable in a second direction perpendicular to the first direction, a first cam device that moves the punch toward the die for deforming the workpiece when being actuated by movement of the slide member, a second cam device that moves the punch for pressing a surface of the workpiece when being actuated by movement of the slide member. The pressure angle of the second cam device is smaller than a pressure angle of the first cam device. The processing machine further includes a drive member configured to move the slide member such that the second cam device is actuated after the first cam device is actuated.

Abstract: A method for forming carbon nanotubes includes preparing a target object having a surface on which one or more openings are formed, each of the openings having a catalyst metal layer on a bottom thereof; performing an oxygen plasma process on the catalyst metal layers; and activating the surfaces of the catalyst metal layers by performing a hydrogen plasma process on the metal catalyst layers subjected to the oxygen plasma process. The method further includes filling carbon nanotubes in the openings on the target object by providing an electrode member having a plurality of through holes above the target object in a processing chamber, and then growing the carbon nanotubes by plasma CVD on the activated catalyst metal layer by diffusing active species in a plasma generated above the electrode member toward the target object through the through holes while applying a DC voltage to the electrode member.

Abstract: An object is to find a target molecule effective for cancer treatments and the like and to provide an antibody capable of specifically binding to the molecule, an anticancer agent comprising the antibody as an active ingredient, and so forth. Hence, prostate cancer cell lines (LNCaP-CR cells and LNCaP cells) were compared by SST-REX, and CXADR was identified as a molecule involved in tumor formation and so on. Then, a monoclonal antibody against CXADR was prepared, and the anti-cancer activity, ADCC activity, CDC activity, and so forth were examined. The result revealed that an antibody capable of binding to an epitope present at positions 181 to 230 of a CXADR protein derived from human exhibited an anti-cancer activity against prostate cancer cells, pancreatic cancer cells, and colorectal cancer cells. Further, it was also revealed that the antibody had an ADCC activity and a CDC activity. Moreover, the structures of light chain and heavy chain variable regions of the antibody were successfully determined.

Abstract: The present invention provides an agent for the prophylaxis or therapy of autoimmune diseases or allergic diseases, which contains an anti-Embigin antibody, particularly an anti-Embigin antibody showing cytotoxicity or a cytotoxicity inducing activity, an agent for the prophylaxis or therapy of diseases involving Th17 cell, and a cytotoxic agent to Th17 cell. In addition, an agent for detection of Th17 cell, which contains an anti-Embigin antibody, a convenient detection method of Th17 cell, which uses the agent, a method of efficiently delivering a drug and the like in a Th17 cell selective manner, which uses an anti-Embigin antibody, and a drug delivery system to Th17 cell are provided.

Abstract: The present invention provides an agent for the prophylaxis or therapy of autoimmune diseases or allergic diseases, which contains an anti-Embigin antibody, particularly an anti-Embigin antibody showing cytotoxicity or a cytotoxicity inducing activity, an agent for the prophylaxis or therapy of diseases involving Th17 cell, and a cytotoxic agent to Th17 cell. In addition, an agent for detection of Th17 cell, which contains an anti-Embigin antibody, a convenient detection method of Th17 cell, which uses the agent, a method of efficiently delivering a drug and the like in a Th17 cell selective manner, which uses an anti-Embigin antibody, and a drug delivery system to Th17 cell are provided.

Abstract: By utilizing an SST-REX method, a cDNA encoding a protein expressed on a cell surface or secreted from the cell was selected from a cDNA library derived from a cancer cell line. Monoclonal antibodies against the protein encoding the selected cDNA were prepared. The in vitro and in vivo anti-cancer activities and binding to various cancer cells lines were examined. As a result, a monoclonal antibody which binds to a PODXL2 protein, and which had excellent anti-cancer activities was found. Further, a region including an epitope of the antibody was successfully identified, and the amino acid sequences of variable regions of a light chain and a heavy chain were successfully determined.