Patents by Inventor Masakatsu Uchiyama

Masakatsu Uchiyama has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • HEAT ENGINE AND POWER GENERATION SYSTEM USING THE HEAT ENGINE
    Publication number: 20130014728
    Abstract: The present invention has a problem aiming to provide a heat engine that emits neither carbon dioxide nor nitrogen oxide and is capable of achieving a simplified structure, and another problem aiming to provide a power generation system using the heat engine. To solve the problems, a heat engine according to the present invention is an internal combustion engine 1a (1b) including a fuel inlet for introducing oxyhydrogen gas (or a mixture with an existing fuel) into a combustion chamber, a spark plug for igniting the oxyhydrogen gas (the mixture) in the combustion chamber at a predetermined time, a piston that moves in accordance with a pressure change in the combustion chamber before and after ignition, and a motion conversion mechanism to change the motion of the piston to rotational motion of an output shaft 7.
    Type: Application
    Filed: April 4, 2011
    Publication date: January 17, 2013
    Applicant: MASA INTERNATIONAL CORP.
    Inventors: Yoriyasu Ozaki, Masakatsu Uchiyama
  • FET type sensor, ion density detecting method comprising this sensor, and base sequence detecting method
    Patent number: 7049645
    Abstract: The surface of a semiconductor substrate (1) comprises an input diode section (2) and a floating diffusion section (3) consisting of a diffusion region reverse to the substrate in conductivity type, an input gate (6) and an output gate (7) fixed on an insulation film (5) extending from an input diode section to a floating diffusion section, a sensing section (9) consisting of an ion sensitive film fixed on the insulation film extending from the input.
    Type: Grant
    Filed: November 11, 2002
    Date of Patent: May 23, 2006
    Assignee: Bio-X Inc.
    Inventors: Kazuaki Sawada, Masakatsu Uchiyama
  • Fet type sensor, ion density detecting method comprising this sensor, and base sequence detecting method
    Publication number: 20050062093
    Abstract: The surface of a semiconductor substrate (1) comprises an input diode section (2) and a floating diffusion section (3) consisting of a diffusion region reverse to the substrate in conductivity type, an input gate (6) and an output gate (7) fixed on an insulation film (5) extending from an input diode section to a floating diffusion section, a sensing section (9) consisting of an ion sensitive film fixed on the insulation film extending from the input.
    Type: Application
    Filed: November 11, 2002
    Publication date: March 24, 2005
    Inventors: Kazuaki Sawada, Masakatsu Uchiyama