Patents by Inventor Masakazu Kawahara
Masakazu Kawahara has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11242592Abstract: A continuous nitriding treatment furnace includes a nitriding chamber, a heater, a first nitriding zone, and a second nitriding zone lower in atmosphere gas temperature than the first nitriding zone by 25° C. to 150° C., the continuous nitriding treatment furnace being configured such that an atmosphere gas in the first nitriding zone flows into the second nitriding zone and being configured to execute a nitriding treatment that forms an iron nitride compound layer composed of an ? phase or of the ? phase and a ?? phase on a surface of the steel member in the first nitriding zone and precipitates the ?? phase in the iron nitride compound layer in the second nitriding zone.Type: GrantFiled: September 27, 2017Date of Patent: February 8, 2022Assignee: DOWA THERMOTECH CO., LTD.Inventors: Katsushige Shimizu, Hokuto Hatanaka, Bin Sun, Masakazu Kawahara
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Publication number: 20190177829Abstract: A continuous nitriding treatment furnace includes a nitriding chamber, a heater, a first nitriding zone, and a second nitriding zone lower in atmosphere gas temperature than the first nitriding zone by 25° C. to 150° C., the continuous nitriding treatment furnace being configured such that an atmosphere gas in the first nitriding zone flows into the second nitriding zone and being configured to execute a nitriding treatment that forms an iron nitride compound layer composed of an ? phase or of the ? phase and a ?? phase on a surface of the steel member in the first nitriding zone and precipitates the ?? phase in the iron nitride compound layer in the second nitriding zone.Type: ApplicationFiled: September 27, 2017Publication date: June 13, 2019Applicant: DOWA THERMOTECH CO., LTD.Inventors: Katsushige SHIMIZU, Hokuto HATANAKA, Bin SUN, Masakazu KAWAHARA
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Publication number: 20110205178Abstract: An electronic device can operate in two operation modes of a “mouse mode” and a “tablet mode”. In the mouse mode, a program is executed in response to an input to a liquid crystal panel implemented by a display-integrated tablet. An operation screen of the program created as a result of execution of the program is displayed on a main screen. In the tablet mode, a program is executed in response to an input to the liquid crystal panel. An operation screen of the program generated as a result of execution of the program is displayed on the liquid crystal panel. In a sub application “book”, information on history of electronic books that have been selected so far for viewing on a book viewer is stored and a soft key indicative of each electronic book is displayed on the liquid crystal panel in the order in accordance with the history information.Type: ApplicationFiled: October 27, 2009Publication date: August 25, 2011Inventors: Toshihiko Yoshida, Masakazu Kawahara, Yukihiro Kubo, Osamu Uratani
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Publication number: 20110012905Abstract: An information processing apparatus includes: a display control unit for causing a display unit to display a reference circle arranged at a prescribed position and to display a moving graphic to be movable in accordance with a move command from an operation unit; a storage unit for storing a parameter in association with a position on a circumference of the reference circle; and a range deciding unit for calculating and outputting a parameter range corresponding to a portion of the circumference of the reference circle located within the moving graphic, based on a position of the moving graphic.Type: ApplicationFiled: March 23, 2009Publication date: January 20, 2011Applicant: Sharp Kabushiki KaishaInventor: Masakazu Kawahara
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Patent number: 7683009Abstract: The present invention provides a Bi2223 based thick film that does not peel off when a thermal or a mechanical shock is applied to a base or an oxide superconductor thick film or the like in the middle of a manufacturing process and a method of manufacturing the same. An oxide superconductor paste 1 having a mixing ratio of Bi2212 composition is applied to a base 3, dried, burned, and thereafter burned at a temperature approximate to its melting point to obtain a partially molten layer 4. Next, an oxide superconductor paste 2 having a mixing ratio of Bi2223 composition is applied to the partially molten layer 4, dried, burned, compressed by a CIP, and thereafter repeatedly burned and compressed for a predetermined number of times to obtain the base 3 having a desired superconductor thick film 5 formed thereon.Type: GrantFiled: October 16, 2006Date of Patent: March 23, 2010Assignees: Central Research Institute of Electric Power Industry, DOWA Electronics Materials Co., Ltd.Inventors: Masahiro Kojima, Masakazu Kawahara, Michiharu Ichikawa, Hiroyuki Kado, Masatoyo Shibuya
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Patent number: 7638463Abstract: To provide an oxide superconductor thick film formation method that can enhance adhesiveness of a Bi2223 thick film to a body to be processed on which the Bi2223 thick film is formed, and increase a cross-sectional area of the Bi2223 thick film, without a decrease in Jc of the Bi2223 thick film. A mixture of a compound oxide having composition Bi2212 and Pb is applied to a surface of the body to be processed, and burned to form a first thick film. An oxide superconductor thick film expressed by a general formula (Bi, Pb)2+aSr2Ca2Cu3OZ (where ?0.1?a?0.5) is formed on the first thick film.Type: GrantFiled: December 15, 2006Date of Patent: December 29, 2009Assignees: DOWA Electronics Materials Co., Ltd., Central Research Institute of Electric Power IndustryInventors: Masahiro Kojima, Masakazu Kawahara, Michiharu Ichikawa, Hiroyuki Kado
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Publication number: 20090036314Abstract: To provide an oxide superconductor thick film formation method that can enhance adhesiveness of a Bi2223 thick film to a body to be processed on which the Bi2223 thick film is formed, and increase a cross-sectional area of the Bi2223 thick film, without a decrease in Jc of the Bi2223 thick film. A mixture of a compound oxide having composition Bi2212 and Pb is applied to a surface of the body to be processed, and burned to form a first thick film. An oxide superconductor thick film expressed by a general formula (Bi, Pb)2+aSr2Ca2Cu3OZ (where ?0.1?a?0.5) is formed on the first thick film.Type: ApplicationFiled: December 15, 2006Publication date: February 5, 2009Applicants: DOWA ELECTRONICS MATERIAL CO, CENTRAL RESEARCH INSTITUTE OF ELECTRIC POWER INDUSTRYInventors: Masahiro Kojima, Masakazu Kawahara, Michiharu Ichikawa, Hiroyuki Kado
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Patent number: 7309511Abstract: The present invention provides an oxide superconductor thick film which is formed on a substrate or a board and has a high Jc and Ic and a method for manufacturing the same. Predetermined amounts of materials containing elements of Bi, Pb, Sr, Ca and Cu are weighed, mixed and subjected to steps of calcining, milling, and drying, and thereafter an organic binder and an organic vehicle are added thereto to prepare a (Bi, Pb)2+aSr2Ca2Cu3O2 superconductive paste, which is applied to the surface of a substrate or a board in a thickness of 260 ?m or more and dried. Thereafter, the paste is first subjected to burning at temperatures of 835° C. to 840° C. for 100 hours, then pressurization, and further burning at temperatures of 835° C. to 840° C. for 100 hours, thereby preparing an oxide superconductor thick film having a film thickness of 130 ?m or more having a high Jc and Ic.Type: GrantFiled: May 20, 2005Date of Patent: December 18, 2007Assignees: Dowa Electronics Materials Co., Ltd, Central Research Institute of Electric Power IndustryInventors: Masahiro Kojima, Masakazu Kawahara, Michiharu Ichikawa, Hiroyuki Kado, Masatoyo Shibuya
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Publication number: 20070142232Abstract: The present invention provides a Bi2223 based thick film that does not peel off when a thermal or a mechanical shock is applied to a base or an oxide superconductor thick film or the like in the middle of a manufacturing process and a method of manufacturing the same. An oxide superconductor paste 1 having a mixing ratio of Bi2212 composition is applied to a base 3, dried, burned, and thereafter burned at a temperature approximate to its melting point to obtain a partially molten layer 4. Next, an oxide superconductor paste 2 having a mixing ratio of Bi2223 composition is applied to the partially molten layer 4, dried, burned, compressed by a CIP, and thereafter repeatedly burned and compressed for a predetermined number of times to obtain the base 3 having a desired superconductor thick film 5 formed thereon.Type: ApplicationFiled: October 16, 2006Publication date: June 21, 2007Applicants: DOWA MINING CO., LTD., CENTRAL RESEARCH INSTITUTE OF ELECTRIC POWER INDUSTRYInventors: Masahiro Kojima, Masakazu Kawahara, Michiharu Ichikawa, Hiroyuki Kado, Masatoyo Shibuya
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Publication number: 20060078670Abstract: The present invention provides an oxide superconductor thick film which is formed on a substrate or a board and has a high Jc and Ic and a method for manufacturing the same. Predetermined amounts of materials containing elements of Bi, Pb, Sr, Ca and Cu are weighed, mixed and subjected to steps of calcining, milling, and drying, and thereafter an organic binder and an organic vehicle are added thereto to prepare a (Bi, Pb)2+aSr2Ca2Cu3O2 superconductive paste, which is applied to the surface of a substrate or a board in a thickness of 260 ?m or more and dried. Thereafter, the paste is first subjected to burning at temperatures of 835° C. to 840° C. for 100 hours, then pressurization, and further burning at temperatures of 835° C. to 840° C. for 100 hours, thereby preparing an oxide superconductor thick film having a film thickness of 130 ?m or more having a high Jc and Ic.Type: ApplicationFiled: May 20, 2005Publication date: April 13, 2006Applicants: Dowa Mining Co., Ltd., Central Research Institute of Electric Power IndustryInventors: Masahiro Kojima, Masakazu Kawahara, Michiharu Ichikawa, Hiroyuki Kado, Masatoyo Shibuya
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Publication number: 20050170969Abstract: The present invention provides an oxide superconductor thick film which is formed on a substrate or a board and has a high Jc and Ic and a method for manufacturing the same. Predetermined amounts of materials containing elements of Bi, Pb, Sr, Ca and Cu are weighed, mixed and subjected to steps of calcining, milling, and drying, and thereafter an organic binder and an organic vehicle are added thereto to prepare a (Bi, Pb)2+aSr2Ca2Cu3Oz superconductive paste, which is applied to the surface of a substrate or a board in a thickness of 260 ?m or more and dried. Thereafter, the paste is first subjected to burning at temperatures of 835° C. to 840° C. for 100 hours, then pressurization, and further burning at temperatures of 835° C. to 840° C. for 100 hours, thereby preparing an oxide superconductor thick film having a film thickness of 130 ?m or more having a high Jc and Ic.Type: ApplicationFiled: September 16, 2004Publication date: August 4, 2005Applicants: Dowa Mining Co., Ltd., Central Research Institute of Electric Power IndustryInventors: Masahiro Kojima, Masakazu Kawahara, Michiharu Ichikawa, Hiroyuki Kado, Masatoyo Shibuya
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Patent number: 6809042Abstract: The present invention provides an oxide superconductor thick film which is formed on a substrate or a board and has a high Jc and Ic and a method for manufacturing the same. Predetermined amounts of materials containing elements of Bi, Pb, Sr, Ca and Cu are weighed, mixed and subjected to steps of calcining, milling, and drying, and thereafter an organic binder and an organic vehicle are added thereto to prepare a (Bi, Pb)2+aSr2Ca2Cu3Oz, superconductive paste, which is applied to the surface of a substrate or a board in a thickness of 260 &mgr;m or more and dried. Thereafter, the paste is first subjected to burning at temperatures of 835° C. to 840° C. for 100 hours, then pressurization, and further burning at temperatures of 835° C. to 840° C. for 100 hours, thereby preparing an oxide superconductor thick film having a film thickness of 130 &mgr;m or more having a high Jc and Ic.Type: GrantFiled: August 26, 2002Date of Patent: October 26, 2004Assignees: Dowa Mining Co., Ltd., Central Research Institute of Electric Power IndustryInventors: Masahiro Kojima, Masakazu Kawahara, Michiharu Ichikawa, Hiroyuki Kado, Masatoyo Shibuya
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Publication number: 20040110641Abstract: The present invention provides a Bi2223 based thick film that does not peel off when a thermal or a mechanical shock is applied to a base or an oxide superconductor thick film or the like in the middle of a manufacturing process and a method of manufacturing the same An oxide superconductor paste 1 having a mixing ratio of Bi2212 composition is applied to a base 3, dried, burned, and thereafter burned at a temperature approximate to its melting point to obtain a partially molten layer 4. Next, an oxide superconductor paste 2 having a mixing ratio of Bi2223 composition is applied to the partially molten layer 4, dried, burned, compressed by a CIP, and thereafter repeatedly burned and compressed for a predetermined number of times to obtain the base 3 having a desired superconductor thick film 5 formed thereon.Type: ApplicationFiled: July 31, 2003Publication date: June 10, 2004Applicants: DOWA MINING CO., LTD., CENTRAL RESEARCH INSTITUTE OF ELECTRIC POWER INDUSTRYInventors: Masahiro Kojima, Masakazu Kawahara, Michiharu Ichikawa, Hiroyuki Kado, Masatoyo Shibuya
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Publication number: 20030096709Abstract: The present invention provides an oxide superconductor thick film which is formed on a substrate or a board and has a high Jc and Ic and a method for manufacturing the same. Predetermined amounts of materials containing elements of Bi, Pb, Sr, Ca and Cu are weighed, mixed and subjected to steps of calcining, milling, and drying, and thereafter an organic binder and an organic vehicle are added thereto to prepare a (Bi, Pb)2+aSr2Ca2Cu3Oz, superconductive paste, which is applied to the surface of a substrate or a board in a thickness of 260 &mgr;m or more and dried. Thereafter, the paste is first subjected to burning at temperatures of 835° C. to 840° C. for 100 hours, then pressurization, and further burning at temperatures of 835° C. to 840° C. for 100 hours, thereby preparing an oxide superconductor thick film having a film thickness of 130 &mgr;m or more having a high Jc and Ic.Type: ApplicationFiled: August 26, 2002Publication date: May 22, 2003Applicant: DOWA MINING CO., LTD.Inventors: Masahiro Kojima, Masakazu Kawahara, Michiharu Ichikawa, Hiroyuki Kado, Masatoyo Shibuya