Patents by Inventor Masakazu MIYAJI
Masakazu MIYAJI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11658011Abstract: A plasma processing method in which a stable process region can be ensured in a wide range, from low microwave power to high microwave power. The plasma processing method includes making production of plasma easy in a region in which production of plasma by continuous discharge is difficult, and plasma-processing an object to be processed, with the generated plasma, wherein the plasma is produced by pulsed discharge in which ON and OFF are repeated, radio-frequency power for producing the pulsed discharge, during an ON period, is a power to facilitate production of plasma by continuous discharge, and a duty ratio of the pulsed discharge is controlled so that an average power of the radio-frequency power per cycle is power in the region in which production of plasma by continuous discharge is difficult.Type: GrantFiled: January 22, 2020Date of Patent: May 23, 2023Assignee: HITACHI HIGH-TECH CORPORATIONInventors: Yoshiharu Inoue, Tetsuo Ono, Michikazu Morimoto, Masaki Fujii, Masakazu Miyaji
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Publication number: 20200273683Abstract: A plasma processing method includes an etching step of etching a wafer in a chamber, a plasma cleaning step of removing a particle on an inner wall of the chamber by introducing a gas containing a halogen element into the chamber by a plasma processing method for removing remaining halogen or the like in the chamber in a short time and improving throughput, and a remaining halogen removing step of removing the halogen element remaining in the chamber in the plasma cleaning step by alternately repeating an on state and an off state of the plasma containing oxygen in the chamber.Type: ApplicationFiled: February 27, 2019Publication date: August 27, 2020Inventors: Yuta TAKAGI, Kosa HIROTA, Yoshiharu INOUE, Masakazu MIYAJI
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Publication number: 20200161092Abstract: A plasma processing method in which a stable process region can be ensured in a wide range, from low microwave power to high microwave power. The plasma processing method includes making production of plasma easy in a region in which production of plasma by continuous discharge is difficult, and plasma-processing an object to be processed, with the generated plasma, wherein the plasma is produced by pulsed discharge in which ON and OFF are repeated, radio-frequency power for producing the pulsed discharge, during an ON period, is a power to facilitate production of plasma by continuous discharge, and a duty ratio of the pulsed discharge is controlled so that an average power of the radio-frequency power per cycle is power in the region in which production of plasma by continuous discharge is difficult.Type: ApplicationFiled: January 22, 2020Publication date: May 21, 2020Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATIONInventors: Yoshiharu Inoue, Tetsuo Ono, Michikazu Morimoto, Masaki Fujii, Masakazu Miyaji
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Patent number: 10600619Abstract: A plasma processing method in which a stable process region can be ensured in a wide range, from low microwave power to high microwave power. The plasma processing method includes making production of plasma easy in a region in which production of plasma by continuous discharge is difficult, and plasma-processing an object to be processed, with the generated plasma, wherein the plasma is produced by pulsed discharge in which ON and OFF are repeated, radio-frequency power for producing the pulsed discharge, during an ON period, is a power to facilitate production of plasma by continuous discharge, and a duty ratio of the pulsed discharge is controlled so that an average power of the radio-frequency power per cycle is power in the region in which production of plasma by continuous discharge is difficult.Type: GrantFiled: April 6, 2016Date of Patent: March 24, 2020Assignee: HITACHI HIGH-TECHNOLOGIES CORPORATIONInventors: Yoshiharu Inoue, Tetsuo Ono, Michikazu Morimoto, Masaki Fujii, Masakazu Miyaji
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Publication number: 20160225587Abstract: A plasma processing method in which a stable process region can be ensured in a wide range, from low microwave power to high microwave power. The plasma processing method includes making production of plasma easy in a region in which production of plasma by continuous discharge is difficult, and plasma-processing an object to be processed, with the generated plasma, wherein the plasma is produced by pulsed discharge in which ON and OFF are repeated, radio-frequency power for producing the pulsed discharge, during an ON period, is a power to facilitate production of plasma by continuous discharge, and a duty ratio of the pulsed discharge is controlled so that an average power of the radio-frequency power per cycle is power in the region in which production of plasma by continuous discharge is difficult.Type: ApplicationFiled: April 6, 2016Publication date: August 4, 2016Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATIONInventors: Yoshiharu Inoue, Tetsuo Ono, Michikazu Morimoto, Masaki Fujii, Masakazu Miyaji
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Patent number: 9349603Abstract: A plasma processing method in which a stable process region can be ensured in a wide range, from low microwave power to high microwave power. The plasma processing method includes making production of plasma easy in a region in which production of plasma by continuous discharge is difficult, and plasma-processing an object to be processed, with the generated plasma, wherein the plasma is produced by pulsed discharge in which ON and OFF are repeated, radio-frequency power for producing the pulsed discharge, during an ON period, is a power to facilitate production of plasma by continuous discharge, and a duty ratio of the pulsed discharge is controlled so that an average power of the radio-frequency power per cycle is power in the region in which production of plasma by continuous discharge is difficult.Type: GrantFiled: August 6, 2014Date of Patent: May 24, 2016Assignee: HITACHI HIGH-TECHNOLOGIES CORPORATIONInventors: Yoshiharu Inoue, Tetsuo Ono, Michikazu Morimoto, Masaki Fujii, Masakazu Miyaji
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Publication number: 20140349418Abstract: A plasma processing method in which a stable process region can be ensured in a wide range, from low microwave power to high microwave power. The plasma processing method includes making production of plasma easy in a region in which production of plasma by continuous discharge is difficult, and plasma-processing an object to be processed, with the generated plasma, wherein the plasma is produced by pulsed discharge in which ON and OFF are repeated, radio-frequency power for producing the pulsed discharge, during an ON period, is a power to facilitate production of plasma by continuous discharge, and a duty ratio of the pulsed discharge is controlled so that an average power of the radio-frequency power per cycle is power in the region in which production of plasma by continuous discharge is difficult.Type: ApplicationFiled: August 6, 2014Publication date: November 27, 2014Inventors: Yoshiharu INOUE, Tetsuo ONO, Michikazu MORIMOTO, Masaki FUJII, Masakazu MIYAJI
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Patent number: 8828254Abstract: A plasma processing method and a plasma processing apparatus in which a stable process region can be ensured in a wide range, from low microwave power to high microwave power. The plasma processing method includes making production of plasma easy in a region in which production of plasma by continuous discharge is difficult, and plasma-processing an object to be processed, with the generated plasma, wherein the plasma is produced by pulsed discharge in which ON and OFF are repeated, radio-frequency power for producing the pulsed discharge, during an ON period, is a power to facilitate production of plasma by continuous discharge, and a duty ratio of the pulsed discharge is controlled so that an average power of the radio-frequency power per cycle is power in the region in which production of plasma by continuous discharge is difficult.Type: GrantFiled: February 1, 2012Date of Patent: September 9, 2014Assignee: Hitachi High-Technologies CorporationInventors: Yoshiharu Inoue, Tetsuo Ono, Michikazu Morimoto, Masaki Fujii, Masakazu Miyaji
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Patent number: 8801951Abstract: In a plasma processing method for conducting etching on an object to be processed by generating plasma from depositional gas introduced into a processing chamber and exposing the object to be processed to the plasma in a state in which radio frequency power is applied, the object to be processed is etched under etching conditions that a deposit film on an inner wall of the processing chamber becomes amorphous by repeating a first period during which the object to be processed is exposed to plasma and a second period during which the object to be processed is exposed to plasma and an etching rate is lower as compared with the first period. Consequently, particles due to increase in the number of processed sheets of the object to be processed can be suppressed.Type: GrantFiled: August 16, 2011Date of Patent: August 12, 2014Assignee: Hitachi High-Technologies CorporationInventors: Yoshiharu Inoue, Michikazu Morimoto, Tsuyoshi Matsumoto, Tetsuo Ono, Tadamitsu Kanekiyo, Mamoru Yakushiji, Masakazu Miyaji
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Publication number: 20130029492Abstract: A plasma processing method and a plasma processing apparatus in which a stable process region can be ensured in a wide range, from low microwave power to high microwave power. The plasma processing method includes making production of plasma easy in a region in which production of plasma by continuous discharge is difficult, and plasma-processing an object to be processed, with the generated plasma, wherein the plasma is produced by pulsed discharge in which ON and OFF are repeated, radio-frequency power for producing the pulsed discharge, during an ON period, is a power to facilitate production of plasma by continuous discharge, and a duty ratio of the pulsed discharge is controlled so that an average power of the radio-frequency power per cycle is power in the region in which production of plasma by continuous discharge is difficult.Type: ApplicationFiled: February 1, 2012Publication date: January 31, 2013Inventors: Yoshiharu INOUE, Tetsuo ONO, Michikazu MORIMOTO, Masaki FUJII, Masakazu MIYAJI
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Publication number: 20130001197Abstract: In a plasma processing method for conducting etching on an object to be processed by generating plasma from depositional gas introduced into a processing chamber and exposing the object to be processed to the plasma in a state in which radio frequency power is applied, the object to be processed is etched under etching conditions that a deposit film on an inner wall of the processing chamber becomes amorphous by repeating a first period during which the object to be processed is exposed to plasma and a second period during which the object to be processed is exposed to plasma and an etching rate is lower as compared with the first period. Consequently, particles due to increase in the number of processed sheets of the object to be processed can be suppressed.Type: ApplicationFiled: August 16, 2011Publication date: January 3, 2013Inventors: Yoshiharu INOUE, Michikazu MORIMOTO, Tsuyoshi MATSUMOTO, Tetsuo ONO, Tadamitsu KANEKIYO, Mamoru YAKUSHIJI, Masakazu MIYAJI