Abstract: According to a radiation imaging apparatus, any separate AEC sensor need not be prepared. Additionally, the apparatus main body can be made compact. To accomplish this, the radiation imaging apparatus has a first optical conversion element that converts incident radiation into an electrical signal, and generates image information on the basis of the electrical signal output from the first optical conversion element. Below a portion that is aligned to the gap between the first optical conversion elements, a plurality of second optical conversion elements which detect the incident amount of the radiation from the gap are formed. Exposure control for the radiation or control of the optical conversion elements is executed on the basis of the detection result by the second optical conversion element.

Abstract: The invention is to provide a radiation detection apparatus adapted for taking a moving image. The radiation detection apparatus has a pixel including a phosphor for converting radiation into light, a photoelectric conversion unit for converting the light converted in the phosphor into an electrical signal, a thin film transistor (TFT 1) for transferring the electrical signal converted in the photoelectric conversion unit, a capacitance for accumulating the electrical signal transferred by the thin film transistor (TFT 1), and a thin film transistor (TFT 2) for reading the electrical signal accumulated in the capacitance. The photoelectric conversion unit, the thin film transistor (TFT 1), the capacitance and the thin film transistor (TFT 2) are formed by a same layer configuration, and is each formed at least by a lower electrode or a gate electrode, a gate insulation film and a semiconductor layer and separated by a protective layer from the phosphor.

Abstract: According to a radiation imaging apparatus, any separate AEC sensor need not be prepared. Additionally, the apparatus main body can be made compact. To accomplish this, the radiation imaging apparatus has a first optical conversion element that converts incident radiation into an electrical signal, and generates image information on the basis of the electrical signal output from the first optical conversion element. Below a portion that is aligned to the gap between the first optical conversion elements, a plurality of second optical conversion elements which detect the incident amount of the radiation from the gap are formed. Exposure control for the radiation or control of the optical conversion elements is executed on the basis of the detection result by the second optical conversion element.

Abstract: An image pickup apparatus or a radiation image pickup apparatus according to the present invention includes: a plurality of pixels which are two-dimensionally arranged on a substrate, each of the plurality of pixels including a set of a semiconductor conversion element that converts an incident electromagnetic wave into an electrical signal and a switching element connected with the semiconductor conversion element; a drive wiring which is commonly connected with the plurality of switching elements arranged in a direction; and a signal wiring which is commonly connected with the plurality of switching elements arranged in a direction different from the direction, the switching element including a first semiconductor layer, the semiconductor conversion element being formed after the switching elements are formed and including the second semiconductor layer formed after the first semiconductor layer is formed, in which the semiconductor conversion element has an electrode formed outside a region in which two of

Abstract: A radiation detecting apparatus comprises a wavelength conversion element for converting a radiation into a light, a photoelectric conversion layer for converting the light into a charge, an electrode layer formed on the photoelectric conversion layer, a first protective layer formed on the electrode layer, and a second protective layers formed on the first protective layer, wherein refractive indices nc1 and nc2 of the first and second protective layers meet a relation: nc1?nc2?1.5, thereby providing a high sensitivity of detecting the radiation.

Abstract: This invention has as its object to realize a radiation image sensing apparatus which can adjust (AEC-controls) the amount of incoming light or dose without requiring high-speed driving. Since a second photoelectric conversion element (108) which is used to detect the total dose of radiation that enters a conversion unit is formed independently of pixels having first conversion elements (101) that are formed in the conversion unit on a single substrate, the need for reading out the outputs from the first conversion elements (101) at high speed for the purpose of adjustment of the dose of incoming radiation can be obviated, and another sensor used to adjust the dose need not be added, thus simplifying the structure of a radiation image sensing apparatus.

Abstract: A radiographic imaging apparatus, comprising: a photoelectric conversion substrate including a pixel area where there are arranged a plurality of pixels each formed of a photoelectric conversion element and a switching element connected to the photoelectric conversion element in a matrix formed on an insulating substrate, a bias line for applying a bias to the photoelectric conversion element, a gate line for supplying a driving signal to the switching element, and a signal line for reading electric charges converted in the photoelectric conversion element; a wavelength conversion element for converting radiation to light that can be detected by the photoelectric conversion element, the wavelength conversion element being disposed according to a region including the pixel area; and connection wiring having a photoelectric conversion layer connected to at least a plurality of lines of one type, that one type being, the bias lines, the signal lines, and the gate lines, wherein at least a part of the connection

Abstract: In an image pick-up apparatus, a plurality of pixels, each pairing a semiconductor conversion element for converting an incident electromagnetic wave to an electric signal and a thin film transistor connected to the semiconductor conversion element, is arranged in a two-dimensional state on a substrate. The image pick-up apparatus includes gate wiring to which gate electrodes of thin film transistors of a plurality of pixels arranged in one direction are commonly connected, and signal wiring to which source electrodes or drain electrodes of thin film transistors of a plurality of pixels arranged in a direction different from the one direction are commonly connected on the substrate. Protection layers are arranged on the thin film transistors, the gate wiring and the signal wiring. The protection layers formed at least at the same time. Then, the protection layers are removed in at least a part or all of regions in which the semiconductor conversion elements are formed.

Abstract: This invention has as its object to realize a radiation image sensing apparatus which can adjust (AEC-controls) the amount of incoming light or dose without requiring high-speed driving. Since a second photoelectric conversion element (108) which is used to detect the total dose of radiation that enters a conversion unit is formed independently of pixels having first conversion elements (101) that are formed in the conversion unit on a single substrate, the need for reading out the outputs from the first conversion elements (101) at high speed for the purpose of adjustment of the dose of incoming radiation can be obviated, and another sensor used to adjust the dose need not be added, thus simplifying the structure of a radiation image sensing apparatus.

Abstract: The invention is to provide a radiation detection apparatus adapted for taking a moving image. The radiation detection apparatus has a pixel including a phosphor for converting radiation into light, a photoelectric conversion unit for converting the light converted in the phosphor into an electrical signal, a thin film transistor (TFT 1) for transferring the electrical signal converted in the photoelectric conversion unit, a capacitance for accumulating the electrical signal transferred by the thin film transistor (TFT 1), and a thin film transistor (TFT 2) for reading the electrical signal accumulated in the capacitance. The photoelectric conversion unit, the thin film transistor (TFT 1), the capacitance and the thin film transistor (TFT 2) are formed by a same layer configuration, and is each formed at least by a lower electrode or a gate electrode, a gate insulation film and a semiconductor layer and separated by a protective layer from the phosphor.

Abstract: A radiographic apparatus capable of detecting radiation in a stable manner and in an amount suitable for a good image includes AEC detectors arranged in a stripe pattern in the space between pixels converting incident radiation into an electrical signal. The stripes of the AEC detectors are arranged so as not to be parallel to those stripes of an anti-scattering grid.

Abstract: A radiation reader including a conversion device, and a method of driving the radiation reader. The conversion device includes (a) a pixel including a conversion device for converting an incident radiation into an electric charge, and (b) a reading circuit including at least one field effect transistor for reading the electric charge from the pixel in an amplifying manner as a signal containing a noise. The reading circuit includes first storage means for storing the signal containing the noise, second storage means for storing the noise, and processing means for deriving an output signal not containing the noise based on a first output from the first storage means and a second output from the second storage means.

Abstract: An X-ray imaging apparatus including an X-ray generation means for emitting X-rays, and an X-ray detector on which a grid selected from a plurality of different types of grids is removably mountable. The X-ray detector receives the X-rays emitted from the X-ray generation means, and obtains an X-ray image. The X-ray detector includes an automatic exposure control (AEC) detector for detecting the quantity of X-rays emitted from the X-ray generation means and for outputting a signal based on the detected quantity. The X-ray imaging apparatus also includes a control means for controlling the X-ray generation means and the AEC detector, where the control means controls the X-ray generation means based on the signal output from the AEC detector, and where the control means controls the AEC detector using correction data to correct an exposure detection element forming a part of the AEC detector.

Abstract: Provided are an imaging apparatus and a radiation detecting apparatus comprising a photoelectric conversion layer for converting an incident light into a charge, an electrode layer formed on the photoelectric conversion layer, first and second protective layers formed on the electrode layer, and a transparent electrode disposed between the electrode layer and the first protective layer, wherein a relation of nc1?nc2?1.5 is met, where nc1 and nc2 are respectively refractive indices of the first and second protective layers.

Abstract: A radiation detecting apparatus comprises a wavelength conversion element for converting a radiation into a light, a photoelectric conversion layer for converting the light into a charge, an electrode layer formed on the photoelectric conversion layer, a first protective layer formed on the electrode layer, and a second protective layers formed on the first protective layer, wherein refractive indices nc1 and nc2 of the first and second protective layers meet a relation: nci?nc2?1.5, thereby providing a high sensitivity of detecting the radiation.

Abstract: An electromagnetic wave detector includes a conversion element for converting incident electromagnetic waves or high energy radiations into an electric charge, a storage capacitor for storing the electric charge produced by the conversion element, a thin film read transistor connected to the storage capacitor, and a thin film reset transistor also connected to the storage capacitor. To the gates of the read and reset thin film transistors are applied ON and OFF voltages at predetermined timings and these voltages are set to values such that any excessive electric charge produced in the storage period is discharged by way of the thin film reset transistor, not by way of the thin film read transistor, in the same storage period.

Abstract: An electromagnetic wave detecting device is provided, which comprises: a detecting unit for transforming an electromagnetic wave into an electric charge for detection, a reset unit for resetting the potential of the detecting unit, a storing unit for storing a signal electric charge generated in the detecting unit by the electromagnetic wave, a first reading unit for reading the signal electric charge, and a second reading unit for reading the potential of the signal electric charge stored in the storing unit in a nondestructive manner.

Abstract: An electric field is applied to a charge emitting layer. The charge emitting layer absorbs radioactive rays generated by a radiation source, converts the rays into electric charges, and emits the converted charges. The electric field has an intensity satisfying a lower limit of a specification value of a carrier capturing efficiency and an upper limit of a specification value of a dark current density. A dark current at a trap level can be lowered, a carrier capturing efficiency can be improved, and radioactive rays can be detected with small noises and at a high sensitivity. It is possible to reliably detect incident radioactive rays and form an image of incident radioactive rays.

Abstract: A photoelectric conversion apparatus having (i) a photoelectric conversion device for converting an incident light into an electric charge and (ii) a reading circuit including at least one thin film transistor for amplifying a signal from the photoelectric conversion device. At least a part of the photoelectric conversion device is formed on a part of the reading circuit. The photoelectric conversion device has a dynamic image reading mode for deriving a plurality of images within a second.

Abstract: Provided are an imaging apparatus and a radiation detecting apparatus comprising a photoelectric conversion layer for converting an incident light into a charge, an electrode layer formed on the photoelectric conversion layer, first and second protective layers formed on the electrode layer, and a transparent electrode disposed between the electrode layer and the first protective layer, wherein a relation of nc1−nc2≦1.5 is met, where nc1 and nc2 are respectively refractive indices of the first and second protective layers.