Patents by Inventor Masakazu Sueyoshi

Masakazu Sueyoshi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7351597
    Abstract: The fabrication of a semiconductor integrated circuit device involves testing using a pushing mechanism that is constructed by forming, over the upper surface of a thin film probe, a reinforcing material having a linear expansion coefficient (thermal expansion coefficient) almost equal to that of a wafer to be tested; forming a groove in the reinforcing material above a contact terminal; placing an elastomer in the groove so that a predetermined amount projects out of the groove; and disposing a pusher and another elastomer to sandwich the pusher between the elastomers. With the use of such a probe, it is possible to improve the throughput of wafer-level electrical testing of a semiconductor integrated circuit.
    Type: Grant
    Filed: May 18, 2007
    Date of Patent: April 1, 2008
    Assignee: Renesas Technology Corp.
    Inventors: Yuji Wada, Susumu Kasukabe, Takehiko Hasebe, Yasunori Narizuka, Akira Yabushita, Terutaka Mori, Akio Hasebe, Yasuhiro Motoyama, Teruo Shoji, Masakazu Sueyoshi
  • Publication number: 20070218572
    Abstract: The fabrication of a semiconductor integrated circuit device involves testing using a pushing mechanism that is constructed by forming, over the upper surface of a thin film probe, a reinforcing material having a linear expansion coefficient (thermal expansion coefficient) almost equal to that of a wafer to be tested; forming a groove in the reinforcing material above a contact terminal; placing an elastomer in the groove so that a predetermined amount projects out of the groove; and disposing a pusher and another elastomer to sandwich the pusher between the elastomers. With the use of such a probe, it is possible to improve the throughput of wafer-level electrical testing of a semiconductor integrated circuit.
    Type: Application
    Filed: May 18, 2007
    Publication date: September 20, 2007
    Inventors: Yuji Wada, Susumu Kasukabe, Takehiko Hasebe, Yasunori Narizuka, Akira Yabushita, Terutaka Mori, Akio Hasebe, Yasuhiro Motoyama, Teruo Shoji, Masakazu Sueyoshi
  • Patent number: 7219422
    Abstract: The fabrication of a semiconductor integrated circuit device involves testing using a pushing mechanism that is constructed by forming, over the upper surface of a thin film probe, a reinforcing material having a linear expansion coefficient (thermal expansion coefficient) almost equal to that of a wafer to be tested; forming a groove in the reinforcing material above a contact terminal; placing an elastomer in the groove so that a predetermined amount projects out of the groove; and disposing a pusher and another elastomer to sandwich the pusher between the elastomers. With the use of such a probe, it is possible to improve the throughput of wafer-level electrical testing of a semiconductor integrated circuit.
    Type: Grant
    Filed: January 29, 2004
    Date of Patent: May 22, 2007
    Assignee: Renesas Technology Corp.
    Inventors: Yuji Wada, Susumu Kasukabe, Takehiko Hasebe, Yasunori Narizuka, Akira Yabushita, Terutaka Mori, Akio Hasebe, Yasuhiro Motoyama, Teruo Shoji, Masakazu Sueyoshi
  • Publication number: 20040183556
    Abstract: Provided is a fabrication method of a semiconductor integrated circuit device which comprises forming a pushing mechanism by forming, over the upper surface of a thin film probe, a reinforcing material having a linear expansion coefficient (thermal expansion coefficient) almost equal to that of a wafer to be tested; forming a groove in the reinforcing material above a contact terminal, placing an elastomer in the groove so that a predetermined amount exceeds the groove, and disposing a pusher and another elastomer to sandwich the pusher between the elastomers. The present invention makes it possible to improve the throughput of wafer-level electrical testing of a semiconductor integrated circuit.
    Type: Application
    Filed: January 29, 2004
    Publication date: September 23, 2004
    Inventors: Yuji Wada, Susumu Kasukabe, Takehiko Hasebe, Yasunori Narizuka, Akira Yabushita, Terutaka Mori, Akio Hasebe, Yasuhiro Motoyama, Teruo Shoji, Masakazu Sueyoshi