Abstract: A semiconductor element includes a semiconductor layer, a first and a second conductive unit, a gate electrode, and a gate insulating film. The semiconductor layer includes a first portion, a second portion, and a third portion provided between the first portion and the second portion. The first conductive unit is electrically connected to the first portion. The second conductive unit is electrically connected to the second portion. The gate electrode is separated from the first conductive unit, the second conductive unit, and the third portion. The gate electrode opposes the third portion. The gate insulating film is provided between the third portion and the gate electrode. A concentration of nitrogen of the first portion is higher than a concentration of nitrogen of the third portion. A concentration of nitrogen of the second portion is higher than the concentration of nitrogen of the third portion.

Abstract: A radiation detector according to an embodiment includes: a semiconductor substrate; a light detecting unit provided on a side of a first surface of the semiconductor substrate; a first insulating film provided covering the light detecting unit; a second insulating film covering the first insulating film; a scintillator provided on the second insulating film; an interconnection provided between the first and second insulating films, and connected to the light detecting unit; a first electrode connected to the interconnection through a bottom portion of the first opening; a second electrode provided on a region in the second surface of the semiconductor substrate, the region opposing at least a part of the light detecting unit; a second opening provided in a region surrounding the first electrode and not surrounding the second electrode; and an insulating resin layer covering the first and second electrodes and the first and second openings.

Abstract: According to one embodiment, a display device includes a first polarizing layer configured to transmit light polarized in a first direction, a second polarizing layer configured to transmit light polarized in a second direction, a display layer provided between the first polarizing layer and the second polarizing layer, an interference filter provided between the first polarizing layer and the display layer, and a refracting layer. The refracting layer includes a first layer and a second layer contacting the first layer. The second polarizing layer is disposed between the refracting layer and the display layer. The second layer is provided between the first layer and the second polarizing layer. The first layer includes a protrusion extending along the first direction and protruding toward the second polarizing layer.

Abstract: According to one embodiment, a display device includes an interference filter including following layers, and a display layer. The first common layer includes first and second regions. The second common layer faces the first common layer. The first spacer layer is provided between the first and second common layers and includes first and second portions facing the first and second regions. The thickness of the first portion is different from the thickness of the second portion. The second spacer layer faces at least one of the first and second portions through the second common layer and is made of the same material as that of the first spacer layer. The coating layer faces the second common layer through the second spacer layer.

Abstract: An uncooled infrared imaging element includes a pixel region, a device region, and a support substrate. The pixel region includes heat-sensitive pixels. The heat-sensitive pixels are arranged in a matrix and change current-voltage characteristics thereof in accordance with receiving amounts of infrared. The device region includes at least one of a drive circuit and a readout circuit which includes a MOS transistor. The drive circuit drives the heat-sensitive pixels. The readout circuit detects signals of the heat-sensitive pixels. The support substrate is provided with a cavity region to be under pixel region and the MOS transistor.

Abstract: An uncooled infrared imaging device according to an embodiment includes: reference pixels formed on a semiconductor substrate and arranged in at least one row; and infrared detection pixels arranged in the remaining rows and detecting incident infrared rays. Each of the reference pixels includes a first cell located above a first concave portion. The first cell includes a first thermoelectric conversion unit having a first infrared absorption film; and a first thermoelectric conversion element. Each of the infrared detection pixels includes a second cell located above a second concave portion, and having a larger area than the first cell. The second cell includes: a second thermoelectric converting unit located above the second concave portion; and first and second supporting structure units supporting the second thermoelectric converting unit above the second concave portion. The second thermoelectric converting unit includes: a second infrared absorption film; and a second thermoelectric conversion element.

Abstract: According to one embodiment, an infrared detection device includes a detection element. The detection element includes a semiconductor substrate, a signal interconnect section, a detection cell and a support section. The semiconductor substrate is provided with a cavity on a surface of the semiconductor substrate. The signal interconnect section is provided in a region surrounding the cavity of the semiconductor substrate. The detection cell spaced from the semiconductor substrate above the cavity includes a thermoelectric conversion layer, and an absorption layer. The absorption layer is laminated with the thermoelectric conversion layer, and provided with a plurality of holes each having a shape whose upper portion is widened. The support section holds the detection cell above the cavity and connects the signal interconnect section and the detection cell.

Abstract: According to one embodiment, a liquid crystal display apparatus includes an interference filter, a transistor, a substrate, and a liquid crystal layer. The interference filter includes a first area and a second area. The first area transmits light in a first wavelength band and reflects light except the first wavelength band. The second area transmits white light. The transistor is provided on the first area and the second area. The substrate faces the interference filter. The liquid crystal layer is provided between the interference filter and the substrate.

Abstract: An infrared solid state imaging device includes an infrared detection element unit having heat sensitive pixels, an AD conversion unit which conducts analog-to-digital conversion on an infrared image signal obtained by the infrared detection element unit, and a digital signal processing unit which converts the image signal converted to a digital signal. The digital signal processing unit stores an image value produced from the digital signal, and acquired in a frame immediately preceding a current frame, subtracts an image value obtained by multiplying the image value acquired in the frame immediately preceding the current frame by a predetermined constant ? in a range of 0 to 1, from an image value acquired in the current frame, and conducts processing of multiplying a resultant image value obtained by the subtraction by 1/(1??) so that an infrared image with less afterimage is provided.

Abstract: An uncooled infrared image sensor according to an embodiments includes: a plurality of pixel cells formed in a first region on a semiconductor substrate; a reference pixel cell formed in a second region on the semiconductor substrate and corresponding to each row or each column of the pixel cells; a supporting unit formed for each of the pixel cell and supporting a corresponding pixel cell; and an interconnect unit formed for each reference pixel cell. Each of the pixel cells includes: a first infrared absorption film and a first heat sensitive element. The reference pixel cell includes: a second infrared absorption film and a second heat sensitive element, the second heat sensitive element having the same characteristics as characteristics of the first heat sensitive element. The third and fourth interconnects of the interconnect unit have the same electrical resistance as electrical resistance of the first and second interconnects of the supporting unit.

Abstract: An uncooled infrared imaging element includes a pixel region, a device region, and a support substrate. The pixel region includes heat-sensitive pixels. The heat-sensitive pixels are arranged in a matrix and change current-voltage characteristics thereof in accordance with receiving amounts of infrared. The device region includes at least one of a drive circuit and a readout circuit which includes a MOS transistor. The drive circuit drives the heat-sensitive pixels. The readout circuit detects signals of the heat-sensitive pixels. The support substrate is provided with a cavity region to be under pixel region and the MOS transistor.

Abstract: According to one embodiment, an infrared detection device includes a detection element. The detection element includes a semiconductor substrate, a signal interconnect section, a detection cell and a support section. The semiconductor substrate is provided with a cavity on a surface of the semiconductor substrate. The signal interconnect section is provided in a region surrounding the cavity of the semiconductor substrate. The detection cell spaced from the semiconductor substrate above the cavity includes a thermoelectric conversion layer, and an absorption layer. The absorption layer is laminated with the thermoelectric conversion layer, and provided with a plurality of holes each having a shape whose upper portion is widened. The support section holds the detection cell above the cavity and connects the signal interconnect section and the detection cell.

Abstract: An uncooled infrared image sensor according to an embodiments includes: a plurality of pixel cells formed in a first region on a semiconductor substrate; a reference pixel cell formed in a second region on the semiconductor substrate and corresponding to each row or each column of the pixel cells; a supporting unit formed for each of the pixel cell and supporting a corresponding pixel cell; and an interconnect unit formed for each reference pixel cell. Each of the pixel cells includes: a first infrared absorption film and a first heat sensitive element. The reference pixel cell includes: a second infrared absorption film and a second heat sensitive element, the second heat sensitive element having the same characteristics as characteristics of the first heat sensitive element. The third and fourth interconnects of the interconnect unit have the same electrical resistance as electrical resistance of the first and second interconnects of the supporting unit.

Abstract: An X-ray detector includes: a semiconductor substrate to generate charged particles by an irradiation of an X-ray; a plurality of pixel electrodes arranged in matrix on an X-ray incident surface of the semiconductor substrate and applied with a first electric potential to detect the charged particles; and a platy electrode provided on a surface opposite to the X-ray incident surface of the semiconductor substrate and applied with a second electric potential different from the first electric potential.

Abstract: An X-ray detector includes: a semiconductor substrate to generate charged particles by an irradiation of an X-ray; a plurality of pixel electrodes arranged in matrix on an X-ray incident surface of the semiconductor substrate and applied with a first electric potential to detect the charged particles; and a platy electrode provided on a surface opposite to the X-ray incident surface of the semiconductor substrate and applied with a second electric potential different from the first electric potential.

Abstract: A flat panel X-ray detector, including an X-ray-electric-charge converting film containing a metal halide and serving to convert an incident X-ray into an electric charge, a pair of electrodes formed on both surfaces of the X-ray-electric-charge converting film, and a blocking layer formed in contact with at least one surface of the X-ray-electric-charge converting film and containing a substance selected from the group consisting of a metal oxide, a metal nitride, a metal halide oxide, a first mixture of at least two of these materials, and a second mixture of a metal halide and any of these materials.

Abstract: A flat panel X-ray detector which includes an X-ray-charge conversion film converting incident X-rays into electric charges, and a pair of electrodes disposed in contact with both surfaces of the X-ray-charge conversion film The X-ray-charge conversion film has a laminate structure including a plurality of metal halide films differing in band gap from one another and laminated along direction of c-axis of hexagonal crystal structure, and halogen atoms contained in the plurality of metal halide films are of the same kind among them.

Abstract: A flat panel X-ray detector, including an X-ray-electric-charge converting film containing a metal halide and serving to convert an incident X-ray into an electric charge, a pair of electrodes formed on both surfaces of the X-ray-electric-charge converting film, and a blocking layer formed in contact with at least one surface of the X-ray-electric-charge converting film and containing a substance selected from the group consisting of a metal oxide, a metal nitride, a metal halide oxide, a first mixture of at least two of these materials, and a second mixture of a metal halide and any of these materials.

Abstract: A flat panel X-ray detector which includes an X-ray-charge conversion film converting incident X-rays into electric charges, and a pair of electrodes disposed in contact with both surfaces of the X-ray-charge conversion film The X-ray-charge conversion film has a laminate structure including a plurality of metal halide films differing in band gap from one another and laminated along direction of c-axis of hexagonal crystal structure, and halogen atoms contained in the plurality of metal halide films are of the same kind among them.

Abstract: A planar X-ray detector including an X-ray-electric charge conversion film converting an incident X-ray into an electric charge, a pixel electrode contiguous to the X-ray-electric charge conversion film and arranged for every pixel, and a switching element connected to the pixel electrode. Also included is a signal line connected to the switching element, and a scanning line supplying a driving signal to the switching element. Further, the X-ray-electric charge conversion film contains phosphor particles, a photosensitive material, and a carrier transfer material.