Patents by Inventor Masaki Hashimura
Masaki Hashimura has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 7183136Abstract: A plurality of Group III nitride compound semiconductor layers are formed on a substrate for performing the formation of elements and the formation of electrodes. The Group III nitride compound semiconductor layers on parting lines are removed by etching or dicing due to a dicer so that only an electrode-forming layer on a side near the substrate remains or no Group III nitride compound semiconductor layer remains on the parting lines. A protective film is formed on the whole front surface. Separation grooves are formed in the front surface of the substrate by laser beam irradiation. The protective film is removed together with reaction products produced by the laser beam irradiation. The rear surface of the substrate 1s is polished to reduce the thickness of the substrate. Then, rear grooves corresponding to the latticed frame-shaped parting lines are formed in the rear surface of the substrate. The substrate is divided into individual elements along the parting lines.Type: GrantFiled: June 23, 2003Date of Patent: February 27, 2007Assignee: Toyoda Gosei Co., Ltd.Inventors: Masaki Hashimura, Shigeki Konishi, Naohisa Nagasaka
-
Patent number: 7157294Abstract: In a flip chip type Group III nitride compound semiconductor light-emitting element, a surface of a substrate serving as a light-emitting surface is formed as a rough surface so that radiated light is scattered by the surface.Type: GrantFiled: June 5, 2002Date of Patent: January 2, 2007Assignee: Toyoda Gosei Co., Ltd.Inventors: Toshiya Uemura, Masaki Hashimura
-
Patent number: 7121925Abstract: A method for dividing a semiconductor wafer into chips according to the present invention is a method for dividing a semiconductor wafer into a large number of semiconductor chips, the semiconductor wafer having a semiconductor layer formed on a substrate. A first method includes the step of forming a blast-resistant mask on a surface of the semiconductor wafer, the blast-resistant mask having a pattern for leaving a grid-like exposed portion as it is and the step of blasting a fine particular blast material to thereby form dividing grooves reaching a predetermined depth of the substrate in the grid-like exposed portion.Type: GrantFiled: March 14, 2001Date of Patent: October 17, 2006Assignee: Toyoda Gosei Co., Ltd.Inventors: Masaki Hashimura, Takao Sato, Koichi Ota
-
Patent number: 6960485Abstract: A process of forming separation grooves for separating a semiconductor wafer into individual light-emitting devices, a process for thinning the substrate, process for adhering the wafer to the adhesive sheet to expose a substrate surface on the reverse or backside of the wafer, a scribing process for forming split lines in the substrate for dividing the wafer into light-emitting devices, and a process of forming a mirror structure comprising a light transmission layer, a reflective layer, and a corrosion-resistant layer, which are laminated in sequence using sputtering or deposition processes. Because the light transmission layer is laminated on the adhesive sheet, gases normally volatilized from the adhesion materials are sealed and do not chemically combine with the metal being deposited as the reflective layer. As a result, reflectivity of the reflective layer can be maintained.Type: GrantFiled: February 28, 2003Date of Patent: November 1, 2005Assignee: Toyoda Gosei Co., Ltd.Inventors: Toshiya Uemura, Naohisa Nagasaka, Masaki Hashimura, Atsuo Hirano, Hiroshi Tadano, Tetsu Kachi, Hideki Hosokawa
-
Patent number: 6956245Abstract: A Group III nitride compound semiconductor light-emitting element has a reflecting surface on a side opposite to a main light-emitting surface of the element viewed from a light-emitting layer. The reflecting surface is inclined to surfaces of growth of semiconductor layers. Light emitted from the light-emitting layer is reflected by the reflecting surface, so that the reflected light emerges from side surfaces of the light-emitting element to the outside without passing through the semiconductor layers (particularly, the light-emitting layer).Type: GrantFiled: May 30, 2003Date of Patent: October 18, 2005Assignee: Toyoda Gosei Co., Ltd.Inventors: Masanobu Senda, Toshiya Uemura, Hideki Omoya, Masaki Hashimura
-
Publication number: 20050186760Abstract: A plurality of Group III nitride compound semiconductor layers are formed on a substrate for performing the formation of elements and the formation of electrodes. The Group III nitride compound semiconductor layers on parting lines are removed by etching or dicing due to a dicer so that only an electrode-forming layer on a side near the substrate remains or no Group III nitride compound semiconductor layer remains on the parting lines. A protective film is formed on the whole front surface. Separation grooves are formed in the front surface of the substrate by laser beam irradiation. The protective film is removed together with reaction products produced by the laser beam irradiation. The rear surface of the substrate 1s is polished to reduce the thickness of the substrate. Then, rear grooves corresponding to the latticed frame-shaped parting lines are formed in the rear surface of the substrate. The substrate is divided into individual elements along the parting lines.Type: ApplicationFiled: June 23, 2003Publication date: August 25, 2005Applicant: Toyoda Gosei Co., Ltd.Inventors: Masaki Hashimura, Shigeki Konishi, Naohisa Nagasaka
-
Publication number: 20050133799Abstract: A process of forming separation grooves for separating a semiconductor wafer into individual light-emitting devices, a process for thinning the substrate, process for adhering the wafer to the adhesive sheet to expose a substrate surface on the reverse or backside of the wafer, a scribing process for forming split lines in the substrate for dividing the wafer into light-emitting devices, and a process of forming a mirror structure comprising a light transmission layer, a reflective layer, and a corrosion-resistant layer, which are laminated in sequence using sputtering or deposition processes. Because the light transmission layer is laminated on the adhesive sheet, gases normally volatilized from the adhesion materials are sealed and do not chemically combine with the metal being deposited as the reflective layer. As a result, reflectivity of the reflective layer can be maintained.Type: ApplicationFiled: January 13, 2005Publication date: June 23, 2005Applicant: TOYODA GOSEI CO., LTD.Inventors: Toshiya Uemura, Naohisa Nagasaka, Masaki Hashimura, Atsuo Hirano, Hiroshi Tadano, Tetsu Kachi, Hideki Hosokawa
-
Publication number: 20050003632Abstract: A method for cutting a sapphire substrate whose A plane functions as a main surface is carried out after forming a semiconductor device or in order to form a device. Here a just A plane of the sapphire substrate is represented by a (11-20) plane, a line of intersection of the main surface and at least one of a (10-12) plane and a (0-112) plane is defined as a base line and a direction which an angle decreases as it reaches the axis c is defined as a positive direction. In that case, a separation line is formed along a first direction which makes an angle of 0 to 4 degrees with the line of intersection and a second direction which is perpendicular to the first direction.Type: ApplicationFiled: July 12, 2002Publication date: January 6, 2005Inventors: Masaru Onishi, Masaki Hashimura
-
Publication number: 20030222259Abstract: A Group III nitride compound semiconductor light-emitting element has a reflecting surface on a side opposite to a main light-emitting surface of the element viewed from a light-emitting layer. The reflecting surface is inclined to surfaces of growth of semiconductor layers. Light emitted from the light-emitting layer is reflected by the reflecting surface, so that the reflected light emerges from side surfaces of the light-emitting element to the outside without passing through the semiconductor layers (particularly, the light-emitting layer).Type: ApplicationFiled: May 30, 2003Publication date: December 4, 2003Applicant: TOYODA GOSEI CO., LTD.Inventors: Masanobu Senda, Toshiya Uemura, Hideki Omoya, Masaki Hashimura
-
Publication number: 20030151058Abstract: A process of forming separation grooves for separating a semiconductor wafer into individual light-emitting devices, a process for thinning the substrate, process for adhering the wafer to the adhesive sheet to expose a substrate surface on the reverse or backside of the wafer, a scribing process for forming split lines in the substrate for dividing the wafer into light-emitting devices, and a process of forming a mirror structure comprising a light transmission layer, a reflective layer, and a corrosion-resistant layer, which are laminated in sequence using sputtering or deposition processes. Because the light transmission layer is laminated on the adhesive sheet, gases normally volatilized from the adhesion materials are sealed and do not chemically combine with the metal being deposited as the reflective layer. As a result, reflectivity of the reflective layer can be maintained.Type: ApplicationFiled: February 28, 2003Publication date: August 14, 2003Inventors: Toshiya Uemura, Naohisa Nagasaka, Masaki Hashimura, Atsuo Hirano, Hiroshi Tadano, Tetsu Kachi, Hideki Hosokawa
-
Publication number: 20030121511Abstract: A method for dividing a semiconductor wafer into chips according to the present invention is a method for dividing a semiconductor wafer into a large number of semiconductor chips, the semiconductor wafer having a semiconductor layer formed on a substrate. A first method includes the step of forming a blast-resistant mask on a surface of the semiconductor wafer, the blast-resistant mask having a pattern for leaving a grid-like exposed portion as it is and the step of blasting a fine particular blast material to thereby form dividing grooves reaching a predetermined depth of the substrate in the grid-like exposed portion.Type: ApplicationFiled: September 30, 2002Publication date: July 3, 2003Inventors: Masaki Hashimura, Takao Sato, Koichi Ota
-
Publication number: 20020197764Abstract: In a flip chip type Group III nitride compound semiconductor light-emitting element, a surface of a substrate serving as a light-emitting surface is formed as a rough surface so that radiated light is scattered by the surface.Type: ApplicationFiled: June 5, 2002Publication date: December 26, 2002Inventors: Toshiya Uemura, Masaki Hashimura
-
Publication number: 20010028062Abstract: A process of forming separation grooves for separating a semiconductor wafer into individual light-emitting devices, a process for thinning the substrate, process for adhering the wafer to the adhesive sheet to expose a substrate surface on the reverse or backside of the wafer, a scribing process for forming split lines in the substrate for dividing the wafer into light-emitting devices, and a process of forming a mirror structure comprising a light transmission layer, a reflective layer, and a corrosion-resistant layer, which are laminated in sequence using sputtering or deposition processes. Because the light transmission layer is laminated on the adhesive sheet, gases normally volatilized from the adhesion materials are sealed and do not chemically combine with the metal being deposited as the reflective layer. As a result, reflectivity of the reflective layer can be maintained.Type: ApplicationFiled: March 29, 2001Publication date: October 11, 2001Inventors: Toshiya Uemura, Naohisa Nagasaka, Masaki Hashimura, Atsuo Hirano, Hiroshi Tadano, Tetsu Kachi, Hideki Hosokawa