Abstract: An information processing method includes the following executed by a computer: acquiring a first image and object data of an object appearing in the first image, extracting a portion of the first image that corresponds to a difference between the object data and an object detection result obtained by inputting the first image to a trained model, the trained model receiving an image as input to output an object detection result, acquiring a second image that includes a portion corresponding to the same object data as object data corresponding to the extracted portion of the first image, reflecting an image based on the extracted portion of the first image in the portion of the acquired second image that corresponds to the same object data, and generating training data for the trained model.

Abstract: A wafer placement table includes a ceramic plate that has at least a wafer placement part at an upper surface thereof, a cooling plate that is joined to a lower surface of the ceramic plate and that has a refrigerant flow path, gas common paths that are provided above the refrigerant flow path, gas introduction paths that extend from a lower surface of the cooling plate to a corresponding one of the gas common paths, and a plurality of gas distribution paths, that are provided for the gas common paths. The gas distribution path that is disposed at an outermost periphery of the ceramic plate is provided at a position that does not overlap the refrigerant flow path in plan view.

Abstract: A wafer placement table includes an upper substrate; a lower substrate; a through hole extending through the lower substrate in an up-down direction; a plurality of projections provided in a dot pattern, for example, at an entirety of an upper surface of the lower substrate and being in contact with the lower surface of the upper substrate; a heat dissipation sheet having a projection insertion hole and being disposed between the upper substrate and the lower substrate; a screw hole provided, in the lower surface of the upper substrate, at a position facing the through hole; a screw member inserted from a lower surface of the lower substrate into the through hole and screwed into the screw hole.

Abstract: A wafer placement table includes an upper substrate; a lower substrate; a through hole extending through the lower substrate in an up-down direction; a plurality of projections provided in a dot pattern, for example, at an entirety of an upper surface of the lower substrate and being in contact with the lower surface of the upper substrate; a heat dissipation sheet having a projection insertion hole and being disposed between the upper substrate and the lower substrate; a screw hole provided, in the lower surface of the upper substrate, at a position facing the through hole; a screw member inserted from a lower surface of the lower substrate into the through hole and screwed into the screw hole; and a thermally conductive paste interposed, for example, between side surfaces of the projections and an inner peripheral surface of the projection insertion hole of the heat dissipation sheet.

Abstract: A wafer placement table includes a ceramic base having a wafer placement surface; resistance heating elements buried in the ceramic base; jumper layers having a planar shape and provided in a different layer from the resistance heating elements; an inner via connecting the jumper layer and an end of the resistance heating element; and a feed via connected to the jumper layer, wherein each of the resistance heating elements is provided for each of zones of a surface parallel to the wafer placement surface, each of the jumper layers is provided for each of the resistance heating elements, and a center-to-center distance between the inner via and the feed via in each of the jumper layers is greater than or equal to 50 mm.

Abstract: A wafer placement table includes an upper substrate including a ceramic substrate and having a wafer placement surface, a lower substrate disposed on a lower surface of the upper substrate including a refrigerant flow path or a refrigerant flow-path groove, a through hole extending through the lower substrate in an up-down direction to intersect with the refrigerant flow path or the refrigerant flow-path groove, a screw hole provided in the lower surface of the upper substrate, at a position facing the through hole, a screw member inserted from a lower surface of the lower substrate into the through hole and screwed into the screw hole, and a refrigerant-leakage prevention member that prevents the refrigerant from leaking out to the lower surface of the lower substrate through the through hole into which the screw member is inserted.

Abstract: A wafer placement table includes a ceramic substrate that has a wafer placement surface on an upper surface, a first cooling substrate formed of a composite material of metal and ceramic or a low thermal expansion metal material, a metal joining layer that joins ceramic substrate and the first cooling substrate to each other, a second cooling substrate in which a refrigerant flow path is formed, a heat dissipation sheet disposed between the first cooling substrate and the second cooling substrate, a screw hole that opens in the lower surface of the first cooling substrate, a through hole that is provided at a position facing the screw hole and that extends through the second cooling substrate in an up-down direction, and a screw member that is inserted into the through hole from a lower surface of the second cooling substrate and that is screwed into the screw hole.

Abstract: A technique for comprehensively analyzing bile acids, sterols, and hormones is achieved. A method for analyzing bile acids, sterols, and hormones includes: a step of separating a plurality of molecules selected from among bile acids, sterols, and hormones in a sample by reversed-phase liquid chromatography; and a step of ionizing the molecules that have been separated; and a step of detecting, through MS analysis, the molecules that have been ionized.

Abstract: A ceramic heater includes: a ceramic plate having a wafer placement surface on a surface thereof; zone heaters embedded in the ceramic plate so as to correspond to zones defined by dividing the surface of the ceramic plate into multiple sections; terminals connected to ends of the zone heaters via internal wires of the ceramic plate; terminal collection regions in which the plurality of terminals are collectively arranged; and non-terminal regions in which no terminal is arranged. The ceramic heater includes, as the zone heaters, a terminal-collection-region zone heater provided in a zone corresponding to the terminal collection regions, and a non-terminal regions zone heater provided in a zone corresponding to the non-terminal regions.

Abstract: A member for a semiconductor manufacturing apparatus includes a ceramic plate having an upper surface serving as a wafer mounting surface and incorporating an electrode, a ceramic dense plug disposed adjacent to a lower surface side of the ceramic plate and ceramic-bonded to the ceramic plate by a ring-shaped joint portion, a metal cooling plate joined to the lower surface of the ceramic plate in a portion other than the ring-shaped joint portion, and a gas flow channel. The gas flow channel includes a gas discharge hole that passes completely through the ceramic plate in the thickness direction of the ceramic plate and an internal gas flow channel that passes from the upper surface to the lower surface of the dense plug while winding through the dense plug. The gas flow channel passes inside of an inner periphery of the joint portion.

Abstract: A wafer placement table includes a ceramic substrate having a wafer placement surface; a first electrically conductive layer embedded in the ceramic substrate; and an electrically conductive via connected at one end to the first electrically conductive layer, wherein the electrically conductive via includes a plurality of columnar members connected together in a vertical direction, and wherein the area of the connection surface of one of two columnar members connected to each other is larger than the area of the connection surface of the other.

Abstract: A wafer placement table is a wafer placement table that includes a refrigerant flow channel through which refrigerant is flowed and includes a top base including a ceramic base incorporating an electrode and having a wafer placement surface on a top surface of the ceramic base, a bottom base on a top surface of which a flow channel groove defining a side wall and a bottom of the refrigerant flow channel is provided, and a seal member disposed between the top base and the bottom base so as to seal the refrigerant flow channel from an outside.

Abstract: A ceramic heater includes an inner-peripheral-side resistance heating element embedded in an inner-peripheral-side region of a ceramic base, an outer-peripheral-side resistance heating element embedded in an outer-peripheral-side region of the ceramic base, outer-peripheral-side power supply terminals supplying electric power to the outer-peripheral-side resistance heating element, and jumpers made of metal meshes and connecting the outer-peripheral-side resistance heating element and the outer-peripheral-side power supply terminals. The jumpers are embedded on a jumper embedded plane different from a plane where the inner-peripheral-side resistance heating element is disposed and from a plane where the outer-peripheral-side resistance heating element is disposed. The jumpers are formed of mesh electrodes that are obtained by dividing a metal mesh disk on the jumper embedded plane into multiple parts.

Abstract: A semiconductor-manufacturing apparatus member includes a ceramic plate having an upper surface serving as a wafer placement surface, a plug disposed in an undersurface of the ceramic plate and including a dense body and a gas flow channel that extends through the body in a thickness direction of the body while winding, a gas outlet port that extends through the ceramic plate in a thickness direction of the ceramic plate to be connected to an upper portion of the gas flow channel, and a metal cooling plate joined to the undersurface of the ceramic plate, and including a gas supply channel through which gas is supplied from a lower portion of the gas flow channel. In the plug, at least a portion in length of the gas flow channel is formed from a porous member.

Abstract: A wafer mounting table includes a first electrode and a second electrode buried inside of a ceramic substrate having a wafer mounting surface so as to be parallel to the wafer mounting surface with the first electrode closer to the wafer mounting surface than the second electrode. The wafer mounting table includes a conductive section that electrically conducts the first electrode and the second electrode. The conductive section is such that a plurality of circular members comprised of plate-shaped metal meshes parallel to the wafer mounting surface are stacked between the first electrode and the second electrode.

Abstract: A wafer placement table includes a first ceramic substrate having a wafer placement surface on an upper surface; a second ceramic substrate disposed on a lower surface side of the first ceramic substrate; a metal bonding layer that bonds a lower surface of the first ceramic substrate and an upper surface of the second ceramic substrate; a connection member including an upper base and a lower base, the connection member being embedded in the second ceramic substrate with the upper base in contact with the metal bonding layer; and a power supply terminal electrically connected to the lower base of the connection member, wherein the connection member has a portion in which an area of cross section when the connection member is cut by a plane parallel to the upper base increases from a side of the upper base to a side of the lower base.

Abstract: A member for semiconductor manufacturing apparatus, includes: a ceramic plate having a wafer placement surface; a plug receiving hole formed in a surface of the ceramic plate opposite to the wafer placement surface; a gas outlet port extending through a bottom wall of the plug receiving hole; a plug received in the plug receiving hole; and a gas flow path disposed inside the plug to be continuous with the gas outlet port, wherein a stepped portion is disposed on a side surface of the plug or an inner surface of the plug receiving hole, the plug receiving hole and the plug are in contact with each other in an area deeper than the stepped portion, a gap is formed between the plug receiving hole and the plug in an area shallower than the stepped portion, and a plug support member made of an adhesive material is formed in the gap.

Abstract: A ceramic heater includes a ceramic plate, a main resistance heating element, and sub resistance heating elements. The main resistance heating element is a heating element that is disposed on a first plane parallel with a wafer placement surface in the ceramic plate and that has a coil shape. The sub resistance heating elements are heating elements that are disposed on a second plane parallel with the first plane in the ceramic plate between the first plane and the wafer placement surface, that complement heating with the main resistance heating element, and that have a two-dimensional shape.

Abstract: A ceramic heater includes a ceramic plate. The ceramic plate has a wafer placement surface and has an inner-peripheral-side zone that has a circular shape and an outer-peripheral-side zone that has an annular shape. An inner-peripheral-side resistance heating element that has a two-dimensional shape is disposed in the inner-peripheral-side zone. An outer-peripheral-side is resistance heating element that has a coil shape is disposed in the outer-peripheral-side zone. A terminal of inner-peripheral-side resistance heating element and a terminal of the outer-peripheral-side resistance heating element are disposed in the inner-peripheral-side.

Abstract: A ceramic heater includes a ceramic plate, a main resistance heating element, and a sub resistance heating element. The main resistance heating element is a coil that is disposed in the ceramic plate, that is wired from one of a pair of main terminals in a one-stroke pattern, and that reaches the other of the pair of the main terminals. The sub resistance heating element is a heating element that is disposed in the ceramic plate, that complements heating with the main resistance heating element, and that has a two-dimensional shape.