Patents by Inventor Masaki Komaki

Masaki Komaki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8258829
    Abstract: A power switch circuit that ensures suppression of an increase in a transient current. The power switch circuit includes a first transistor, which generates an output voltage in response to a control signal, and a time difference generation circuit, which delays the control signal by performing a logical process with the output voltage of the first transistor and the control signal.
    Type: Grant
    Filed: September 16, 2009
    Date of Patent: September 4, 2012
    Assignee: Fujitsu Semiconductor Limited
    Inventor: Masaki Komaki
  • Patent number: 8072243
    Abstract: A semiconductor device is provided. The semiconductor device includes a first circuit provided between a power source voltage line and a ground line, including at least two first MOS transistors coupled in parallel and a second circuit, which is provided between the power source voltage line and the ground line, including at least two second MOS transistors coupled in series. The gate length and the gate width of the first MOS transistor are adjusted so that the first MOS transistor has a gate area allowing a first characteristic variation of the first MOS transistor to be substantially equal to a second characteristic variation of the second MOS transistor.
    Type: Grant
    Filed: January 8, 2010
    Date of Patent: December 6, 2011
    Assignee: Fujitsu Semiconductor Limited
    Inventors: Akifumi Nishiwaki, Masaki Komaki
  • Publication number: 20100213979
    Abstract: A semiconductor device is provided. The semiconductor device includes a first circuit provided between a power source voltage line and a ground line, including at least two first MOS transistors coupled in parallel and a second circuit, which is provided between the power source voltage line and the ground line, including at least two second MOS transistors coupled in series. The gate length and the gate width of the first MOS transistor are adjusted so that the first MOS transistor has a gate area allowing a first characteristic variation of the first MOS transistor to be substantially equal to a second characteristic variation of the second MOS transistor.
    Type: Application
    Filed: January 8, 2010
    Publication date: August 26, 2010
    Applicant: FUJITSU MICROELECTRONICS LIMITED
    Inventors: Akifumi Nishiwaki, Masaki Komaki
  • Publication number: 20100001782
    Abstract: A power switch circuit that ensures suppression of an increase in a transient current. The power switch circuit includes a first transistor, which generates an output voltage in response to a control signal, and a time difference generation circuit, which delays the control signal by performing a logical process with the output voltage of the first transistor and the control signal.
    Type: Application
    Filed: September 16, 2009
    Publication date: January 7, 2010
    Applicant: FUJITSU MICROELECTRONICS LIMITED
    Inventor: Masaki KOMAKI
  • Patent number: 7521349
    Abstract: The present invention provides a fundamental cell, semiconductor integrated circuit device, wiring method and wiring apparatus for designing a layout of a functional circuit block or a semiconductor integrated circuit device using the fundamental cells, with a higher degree of freedom of wirings. The connection terminals 2 and 3 of the fundamental cell 1 are terminals for supplying the power source voltage VDD and ground potential VSS to the N and P type wells. The terminals may be defined as a contact structure between a metal layer and N and P type well areas, and alternatively defined as stacked VIA structure for multilayered metal wiring layers and N and P type well areas if desired in correspondence with the manufacturing process used for manufacturing the semiconductor integrated circuit device implementing the fundamental cell 1. The fundamental cell 1 has neither the connection terminals 2 and 3, nor the power source voltage VDD and ground potential VSS to those two PMOS and NMOS transistors.
    Type: Grant
    Filed: June 23, 2004
    Date of Patent: April 21, 2009
    Assignee: Fujitsu Microelectronics Limited
    Inventor: Masaki Komaki
  • Patent number: 7508696
    Abstract: A decoupling capacitor includes a first MOS transistor having a first conductivity type. The first MOS transistor functions as a resistor element due to an on-resistance between its source and drain. The source is connected to first power supply wiring. The decoupling capacity further includes a second MOS transistor having a second conductivity type. The second MOS transistor is connected to second power supply wiring. The second MOS transistor functions as a capacitor element and has a gate length greater than that of the first MOS transistor.
    Type: Grant
    Filed: August 24, 2006
    Date of Patent: March 24, 2009
    Assignee: Fujitsu Microelectronics Limited
    Inventor: Masaki Komaki
  • Publication number: 20090058486
    Abstract: A master-slave circuit that includes a master circuit having input data stored therein, a storage unit for receiving the input data in response to receiving a sleep mode setting signal that sets a sleep mode, and for storing the input data, and a first control unit for interrupting the supply of a power supply voltage to the master circuit after the input data is stored in the storage unit.
    Type: Application
    Filed: August 18, 2008
    Publication date: March 5, 2009
    Applicant: FUJITSU LIMITED
    Inventors: Tadashi OZAWA, Masaki Komaki, Katsuhito Hashiba, Tatsuki Sahashi, Yukihiro Sakata, Hiroto Nishihata, Akihiro Miki
  • Patent number: 7500211
    Abstract: A unit cell of a semiconductor integrated circuit capable of improving wiring efficiency in layout of a functional circuit block or the like using a unit cell, and a wiring method and wiring program using the unit cell are provided. In a unit cell, auxiliary power wiring regions are formed with reference to grids that exist from a cell edge every basic cell width in the X-direction. Input signal terminals and an output signal terminal are each arranged so as to include at least one wiring connecting portion outside the auxiliary power wiring regions. This makes it possible to wire wiring other than signal wiring in the auxiliary power wiring region. When a functional circuit block is constructed by arranging unit cells in a matrix, auxiliary power wiring regions are formed at a pitch of the basic cell width, through the functional circuit block in the Y-direction.
    Type: Grant
    Filed: August 23, 2006
    Date of Patent: March 3, 2009
    Assignee: Fujitsu Microelectronics Limited
    Inventor: Masaki Komaki
  • Patent number: 7493582
    Abstract: A transistor layout including a diffusion region and a gate line. The gate line intersects part of the diffusion region in an overlapping manner. The layout includes an L-shaped bent portion included in the diffusion region. An auxiliary pattern is included in the diffusion region opposite to the L-shaped bent portion so that the gate line is located between the L-shaped bent portion and the auxiliary pattern. The auxiliary pattern and the L-shaped bent portion are spaced from the gate line by the same distance.
    Type: Grant
    Filed: October 30, 2006
    Date of Patent: February 17, 2009
    Assignee: Fujitsu Limited
    Inventor: Masaki Komaki
  • Publication number: 20070230087
    Abstract: A decoupling capacitor includes a first MOS transistor having a first conductivity type. The first MOS transistor functions as a resistor element due to an on-resistance between its source and drain. The source is connected to first power supply wiring. The decoupling capacity further includes a second MOS transistor having a second conductivity type. The second MOS transistor is connected to second power supply wiring. The second MOS transistor functions as a capacitor element and has a gate length greater than that of the first MOS transistor.
    Type: Application
    Filed: August 24, 2006
    Publication date: October 4, 2007
    Inventor: Masaki Komaki
  • Publication number: 20070228419
    Abstract: A unit cell of a semiconductor integrated circuit capable of improving wiring efficiency in layout of a functional circuit block or the like using a unit cell, and a wiring method and wiring program using the unit cell are provided. In a unit cell, auxiliary power wiring regions are formed with reference to grids that exist from a cell edge every basic cell width in the X-direction. Input signal terminals and an output signal terminal are each arranged so as to include at least one wiring connecting portion outside the auxiliary power wiring regions. This makes it possible to wire wiring other than signal wiring in the auxiliary power wiring region. When a functional circuit block is constructed by arranging unit cells in a matrix, auxiliary power wiring regions are formed at a pitch of the basic cell width, through the functional circuit block in the Y-direction.
    Type: Application
    Filed: August 23, 2006
    Publication date: October 4, 2007
    Inventor: Masaki Komaki
  • Patent number: 7256620
    Abstract: A selector circuit precisely outputs a signal selected from a plurality of signals. A latch circuit unit generates an internal selection control signal for controlling a selection operation of a selector circuit unit. When the levels of first and second data input signals do not match each other, the selector circuit unit maintains its selected state and does not perform a selecting operation based on the selection signal until the levels of the signals match each other in accordance with the internal selection control signal.
    Type: Grant
    Filed: February 8, 2005
    Date of Patent: August 14, 2007
    Assignee: Fujitsu Limited
    Inventor: Masaki Komaki
  • Publication number: 20070096158
    Abstract: A transistor layout including a diffusion region and a gate line. The gate line intersects part of the diffusion region in an overlapping manner. The layout includes an L-shaped bent portion included in the diffusion region. An auxiliary pattern is included in the diffusion region opposite to the L-shaped bent portion so that the gate line is located between the L-shaped bent portion and the auxiliary pattern. The auxiliary pattern and the L-shaped bent portion are spaced from the gate line by the same distance.
    Type: Application
    Filed: October 30, 2006
    Publication date: May 3, 2007
    Applicant: FUJITSU LIMITED
    Inventor: Masaki Komaki
  • Patent number: 6996794
    Abstract: This invention provides a method and system for designing the layout of a semiconductor device that appropriately arranges various types of auxiliary cells in vacant areas. The method of the present invention is devised for laying out a plurality of auxiliary cells between logic cells in a semiconductor device. The present invention further provides an apparatus comprising a processor configured to carry out the inventive method. The apparatus of the present invention may include a cell library in which the auxiliary cells are registered and dummy cells are utilized. The present invention additionally provides a computer readable storage medium, containing a program code instructed to perform the method of the present invention.
    Type: Grant
    Filed: March 14, 2003
    Date of Patent: February 7, 2006
    Assignee: Fujitsu Limited
    Inventor: Masaki Komaki
  • Publication number: 20050166107
    Abstract: A selector circuit precisely outputs a signal selected from a plurality of signals. A latch circuit unit generates an internal selection control signal for controlling a selection operation of a selector circuit unit. When the levels of first and second data input signals do not match each other, the selector circuit unit maintains its selected state and does not perform a selecting operation based on the selection signal until the levels of the signals match each other in accordance with the internal selection control signal.
    Type: Application
    Filed: February 8, 2005
    Publication date: July 28, 2005
    Inventor: Masaki Komaki
  • Publication number: 20040222442
    Abstract: The present invention provides a fundamental cell, semiconductor integrated circuit device, wiring method and wiring apparatus for designing a layout of a functional circuit block or a semiconductor integrated circuit device using the fundamental cells, with a higher degree of freedom of wirings. The connection terminals 2 and 3 of the fundamental cell 1 are terminals for supplying the power source voltage VDD and ground potential VSS to the N and P type wells. The terminals may be defined as a contact structure between a metal layer and N and P type well areas, and alternatively defined as stacked VIA structure for multilayered metal wiring layers and N and P type well areas if desired in correspondence with the manufacturing process used for manufacturing the semiconductor integrated circuit device implementing the fundamental cell 1. The fundamental cell 1 has neither the connection terminals 2 and 3, nor the power source voltage VDD and ground potential VSS to those two PMOS and NMOS transistors.
    Type: Application
    Filed: June 23, 2004
    Publication date: November 11, 2004
    Applicant: FUJITSU LIMITED
    Inventor: Masaki Komaki
  • Patent number: 6794898
    Abstract: A scan flip-flop circuit achieving higher operation speed, lower power consumption, and a simplified selector section, an array of the scan flip-flop circuits, and an integrated circuit device having therein the array are provided. In a scan flip-flop circuit, an output terminal is provided in addition to an output terminal. One of the output terminals is used for a logic circuit and the other output terminal is used for a scan flip-flop circuit of the next stage. At the output terminal for the scan flip-flop circuit 1 of the next stage, an output is fixed in a normal operation, thereby achieving higher operation speed in the normal operation and lower power consumption. A selector section can employ a relatively simple OR-AND-INVERTER structure.
    Type: Grant
    Filed: February 5, 2003
    Date of Patent: September 21, 2004
    Assignee: Fujitsu Limited
    Inventor: Masaki Komaki
  • Patent number: 6774412
    Abstract: The present invention provides a fundamental cell, semiconductor integrated circuit device, wiring method and wiring apparatus for designing a layout of a functional circuit block or a semiconductor integrated circuit device using the fundamental cells, with a higher degree of freedom of wirings. The connection terminals 2 and 3 of the fundamental cell 1 are terminals for supplying the power source voltage VDD and ground potential VSS to the N and P type wells. The terminals may be defined as a contact structure between a metal layer and N and P type well areas, and alternatively defined as stacked VIA structure for multilayered metal wiring layers and N and P type well areas if desired in correspondence with the manufacturing process used for manufacturing the semiconductor integrated circuit device implementing the fundamental cell 1. The fundamental cell 1 has neither the connection terminals 2 and 3, nor the power source voltage VDD and ground potential VSS to those two PMOS and NMOS transistors.
    Type: Grant
    Filed: August 28, 2001
    Date of Patent: August 10, 2004
    Assignee: Fujitsu Limited
    Inventor: Masaki Komaki
  • Publication number: 20030222677
    Abstract: A scan flip-flop circuit achieving higher operation speed, lower power consumption, and a simplified selector section, an array of the scan flip-flop circuits, and an integrated circuit device having therein the array are provided. In a scan flip-flop circuit, an output terminal is provided in addition to an output terminal. One of the output terminals is used for a logic circuit and the other output terminal is used for a scan flip-flop circuit of the next stage. At the output terminal for the scan flip-flop circuit 1 of the next stage, an output is fixed in a normal operation, thereby achieving higher operation speed in the normal operation and lower power consumption. A selector section can employ a relatively simple OR-AND-INVERTER structure.
    Type: Application
    Filed: February 5, 2003
    Publication date: December 4, 2003
    Applicant: FUJITSU LIMITED
    Inventor: Masaki Komaki
  • Publication number: 20030135835
    Abstract: This invention provides a method and system for designing the layout of a semiconductor device that appropriately arranges various types of auxiliary cells in vacant areas. The method of the present invention is devised for laying out a plurality of auxiliary cells between logic cells in a semiconductor device. The present invention further provides an apparatus comprising a processor configured to carry out the inventive method. The apparatus of the present invention may include a cell library in which the auxiliary cells are registered and dummy cells are utilized. The present invention additionally provides a computer readable storage medium, containing a program code instructed to perform the method of the present invention.
    Type: Application
    Filed: March 14, 2003
    Publication date: July 17, 2003
    Applicant: Fujitsu Limited
    Inventor: Masaki Komaki