Patents by Inventor Masaki Konishi
Masaki Konishi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240132736Abstract: An object is to obtain a white ink which is easy to redisperse and is re-dispersible by being shaken several tens of times with weak force at most, or alternatively, without being shaken. As a solution, a white ink composition is provided which contains 50.0% by mass or less of a titanium oxide pigment treated with silica, alumina, and contains an organic compound in a solid content of the white ink composition, and contains 5.0 parts by mass or more of an alkali-soluble resin whose weight-average molecular weight is 28,000 to 100,000 relative to 100 parts by mass of the titanium oxide pigment, and further contains a water-dispersible resin and water.Type: ApplicationFiled: November 16, 2021Publication date: April 25, 2024Inventors: Hiroyuki KONISHI, Yuya WATANABE, Ryuta NODA, Masaki MURAKAMI, Satoshi HIRAKAWA
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Publication number: 20240124735Abstract: An object is to obtain an ink set capable of forming images of excellent image quality even when an acidic atmosphere, arising from use of a volatile acid in a pretreatment solution, is present in the vicinity of ink nozzles, etc. As a solution, an ink set containing a pretreatment solution and an ink composition is provided, wherein: the pretreatment solution contains an organic acid having a boiling point of 120° C. or lower at 1 atmospheric pressure; and the ink composition contains a pigment and an alkali-soluble resin having an acid value of 200 mgKOH/g or higher or crosslinked substance thereof accounting for 1.8% by mass or more in the ink composition, and further contains a water-dispersible resin and water.Type: ApplicationFiled: November 12, 2021Publication date: April 18, 2024Inventors: Hiroyuki KONISHI, Ryuta NODA, Masaki MURAKAMI, Masahiro UEKI, Satoshi HIRAKAWA
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Patent number: 9647108Abstract: A silicon carbide semiconductor device includes: a substrate; a drift layer; a current dispersion layer; a base region; a source region; trenches; a gate insulation film; a gate electrode; a source electrode; a drain electrode; and a bottom layer. The current dispersion layer is arranged on the drift layer, and has a first conductive type with an impurity concentration higher than the drift layer. The bottom layer has a second conductive type, is arranged under the base region, covers a bottom of each trench including a corner portion of the bottom of the trench, and has a depth equal to or deeper than the current dispersion layer.Type: GrantFiled: September 15, 2014Date of Patent: May 9, 2017Assignees: DENSO CORPORATION, TOYOTA JIDOSHA KABUSHIKI KAISHAInventors: Naohiro Suzuki, Sachiko Aoi, Yukihiko Watanabe, Akitaka Soeno, Masaki Konishi
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Publication number: 20160247910Abstract: A silicon carbide semiconductor device includes: a substrate; a drift layer; a current dispersion layer; a base region; a source region; trenches; a gate insulation film; a gate electrode; a source electrode; a drain electrode; and a bottom layer. The current dispersion layer is arranged on the drift layer, and has a first conductive type with an impurity concentration higher than the drift layer. The bottom layer has a second conductive type, is arranged under the base region, covers a bottom of each trench including a corner portion of the bottom of the trench, and has a depth equal to or deeper than the current dispersion layer.Type: ApplicationFiled: September 15, 2014Publication date: August 25, 2016Applicants: DENSO CORPORATION, TOYOTA JIDOSHA KABUSHIKI KAISHAInventors: Naohiro SUZUKI, Sachiko AOI, Yukihiko WATANABE, Akitaka SOENO, Masaki KONISHI
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Patent number: 8470672Abstract: A method of manufacturing a semiconductor device includes forming a drift layer on a substrate; forming a base layer on the drift layer; forming a trench to penetrate the base layer and to reach the drift layer; rounding off a part of a shoulder corner and a part of a bottom corner of the trench; covering an inner wall of the trench with an organic film; implanting an impurity to a surface portion of the base layer; forming a source region by activating the implanted impurity; and removing the organic film after the source region is formed, in which the substrate, the drift layer, the base layer and the source region are made of silicon carbide, and the implanting and the activating of the impurity are performed under a condition that the trench is covered with the organic film.Type: GrantFiled: August 30, 2011Date of Patent: June 25, 2013Assignees: DENSO CORPORATION, Toyota Jidosha Kabushiki KaishaInventors: Takeshi Endo, Shinichiro Miyahara, Tomoo Morino, Masaki Konishi, Hirokazu Fujiwara, Jun Morimoto, Tsuyoshi Ishikawa, Takashi Katsuno, Yukihiko Watanabe
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Patent number: 8440524Abstract: A method for manufacturing a semiconductor device including a semiconductor substrate composed of silicon carbide, an upper surface electrode which contacts an upper surface of the substrate, and a lower surface electrode which contacts a lower surface of the substrate, the method including steps of: (a) forming an upper surface structure on the upper surface side of the substrate, and (b) forming a lower surface structure on the lower surface side of the substrate. The step (a) comprises steps of: (a1) depositing an upper surface electrode material layer on the upper surface of the substrate, the upper surface electrode material layer being a raw material layer of the upper surface electrode, and (a2) annealing the upper surface electrode material layer.Type: GrantFiled: February 18, 2011Date of Patent: May 14, 2013Assignees: Toyota Jidosha Kabushiki Kaisha, Denso CorporationInventors: Hirokazu Fujiwara, Masaki Konishi, Jun Kawai, Takeo Yamamoto, Takeshi Endo, Takashi Katsuno, Yukihiko Watanabe, Narumasa Soejima
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Patent number: 8324704Abstract: A silicon carbide semiconductor device with a Schottky barrier diode includes a first conductivity type silicon carbide substrate, a first conductivity type silicon carbide drift layer on a first surface of the substrate, a Schottky electrode forming a Schottky contact with the drift layer, and an ohmic electrode on a second surface of the substrate. The Schottky electrode includes an oxide layer in direct contact with the drift layer. The oxide layer is made of an oxide of molybdenum, titanium, nickel, or an alloy of at least two of these elements.Type: GrantFiled: March 23, 2010Date of Patent: December 4, 2012Assignees: DENSO CORPORATION, Toyota Jidosha Kabushiki KaishaInventors: Takeo Yamamoto, Takeshi Endo, Eiichi Okuno, Hirokazu Fujiwara, Masaki Konishi, Takashi Katsuno, Yukihiko Watanabe
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Patent number: 8168485Abstract: A method of making a semiconductor device includes forming a p-type semiconductor region to an n-type semiconductor substrate in such a manner that the p-type semiconductor region is partially exposed to a top surface of the semiconductor substrate, forming a Schottky electrode of a first material in such a manner that the Schottky electrode is in Schottky contact with an n-type semiconductor region exposed to the top surface of the semiconductor substrate, and forming an ohmic electrode of a second material different from the first material in such a manner that the ohmic electrode is in ohmic contact with the exposed p-type semiconductor region. The Schottky electrode is formed earlier than the ohmic electrode.Type: GrantFiled: August 4, 2009Date of Patent: May 1, 2012Assignee: DENSO CORPORATIONInventors: Takeshi Endo, Eiichi Okuno, Takeo Yamamoto, Hirokazu Fujiwara, Masaki Konishi, Yukihiko Watanabe, Takashi Katsuno
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Patent number: 8164100Abstract: A semiconductor device is provided in which the contact resistance of the interface between an electrode and the semiconductor substrate is reduced. The semiconductor device includes a 4H polytype SiC substrate, and an electrode formed on a surface of the substrate. A 3C polytype layer, which extends obliquely relative to the surface of the substrate and whose end portion at the substrate surface is in contact with the electrode, is formed at the surface of the substrate. The 3C polytype layer has a lower bandgap than 4H polytype. Hence, electrons present in the 4H polytype region pass through the 3C polytype layer and reach the electrode. More precisely, the width of the passageway of the electrons is determined by the thickness of the 3C polytype layer. Consequently, with this semiconductor device, in which the passageway of the electrons is narrow, the electrons are able to reach the electrode at a speed close to the theoretical value, by the quantum wire effect.Type: GrantFiled: December 18, 2008Date of Patent: April 24, 2012Assignees: Toyota Jidosha Kabushiki Kaisha, Denso CorporationInventors: Hirokazu Fujiwara, Masaki Konishi, Eiichi Okuno
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Patent number: 8163637Abstract: First, a first layer made of Ni or an alloy including Ni may be formed on an upper surface of a semiconductor layer. Next, a second layer made of silicon oxide may be formed on an upper surface of the first layer. Next, a part, which corresponds to a semiconductor region, of the second layer may be removed. Next, second conductive type ion impurities may be injected from upper sides of the first and second layers to the semiconductor layer after the removing step.Type: GrantFiled: December 22, 2010Date of Patent: April 24, 2012Assignees: Toyota Jidosha Kabushiki Kaisha, Denso CorporationInventors: Masaki Konishi, Hirokazu Fujiwara, Takeshi Endo, Takeo Yamamoto, Takashi Katsuno, Yukihiko Watanabe
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Publication number: 20120052642Abstract: A method of manufacturing a semiconductor device includes forming a drift layer on a substrate; forming a base layer on the drift layer; forming a trench to penetrate the base layer and to reach the drift layer; rounding off a part of a shoulder corner and a part of a bottom corner of the trench; covering an inner wall of the trench with an organic film; implanting an impurity to a surface portion of the base layer; forming a source region by activating the implanted impurity; and removing the organic film after the source region is formed, in which the substrate, the drift layer, the base layer and the source region are made of silicon carbide, and the implanting and the activating of the impurity are performed under a condition that the trench is covered with the organic film.Type: ApplicationFiled: August 30, 2011Publication date: March 1, 2012Applicants: TOYOTA JIDOSHA KABUSHIKI KAISHA, DENSO CORPORATIONInventors: Takeshi ENDO, Shinichiro MIYAHARA, Tomoo MORINO, Masaki KONISHI, Hirokazu FUJIWARA, Jun MORIMOTO, Tsuyoshi ISHIKAWA, Takashi KATSUNO, Yukihiko WATANABE
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Publication number: 20110207321Abstract: A method for manufacturing a semiconductor device including a semiconductor substrate composed of silicon carbide, an upper surface electrode which contacts an upper surface of the substrate, and a lower surface electrode which contacts a lower surface of the substrate, the method including steps of: (a) forming an upper surface structure on the upper surface side of the substrate, and (b) forming a lower surface structure on the lower surface side of the substrate. The step (a) comprises steps of: (a1) depositing an upper surface electrode material layer on the upper surface of the substrate, the upper surface electrode material layer being a raw material layer of the upper surface electrode, and (a2) annealing the upper surface electrode material layer.Type: ApplicationFiled: February 18, 2011Publication date: August 25, 2011Applicants: TOYOTA JIDOSHA KABUSHIKI KAISHA, DENSO CORPORATIONInventors: Hirokazu FUJIWARA, Masaki KONISHI, Jun KAWAI, Takeo YAMAMOTO, Takeshi ENDO, Takashi KATSUNO, Yukihiko WATANABE, Narumasa SOEJIMA
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Publication number: 20110151654Abstract: First, a first layer made of Ni or an alloy including Ni may be formed on an upper surface of a semiconductor layer. Next, a second layer made of silicon oxide may be formed on an upper surface of the first layer. Next, a part, which corresponds to a semiconductor region, of the second layer may be removed. Next, second conductive type ion impurities may be injected from upper sides of the first and second layers to the semiconductor layer after the removing step.Type: ApplicationFiled: December 22, 2010Publication date: June 23, 2011Applicants: TOYOTA JIDOSHA KABUSHIKI KAISHA, DENSO CORPORATIONInventors: Masaki KONISHI, Hirokazu FUJIWARA, Takeshi ENDO, Takeo YAMAMOTO, Takashi KATSUNO, Yukihiko WATANABE
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Patent number: 7855131Abstract: A manufacturing method of a semiconductor device comprises a process of doping conductive impurities in a silicon carbide substrate, a process of forming a cap layer on a surface of the silicon carbide substrate, a process of activating the conductive impurities doped in the silicon carbide substrate, a process of oxidizing the cap layer after a first annealing process, and a process of removing the oxidized cap layer. It is preferred that the cap layer is formed from material that includes metal carbide. Since the oxidation onset temperature of metal carbide is comparatively low, the oxidization of the cap layer becomes easy if metal carbide is included in the cap layer. Specifically, it is preferred that the cap layer is formed from metal carbide that has an oxidation onset temperature of 1000 degrees Celsius or below, such as tantalum carbide.Type: GrantFiled: April 20, 2009Date of Patent: December 21, 2010Assignees: Toyota Jidosha Kabushiki Kaisha, Denso CorporationInventors: Hirokazu Fujiwara, Masaki Konishi, Takeo Yamamoto, Eiichi Okuno, Yukihiko Watanbe, Takashi Katsuno
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Patent number: 7825017Abstract: A silicon carbide semiconductor device provided as a semiconductor chip includes a substrate, a drift layer on the substrate, an insulation film on the drift layer, a semiconductor element formed in a cell region of the drift layer, a surface electrode formed on the drift layer and electrically coupled to the semiconductor element through an opening of the insulation film, and a passivation film formed above the drift layer around the periphery of the cell region to cover an outer edge of the surface electrode. The passivation film has an opening through which the surface electrode is exposed outside. A surface of the passivation film is made uneven to increase a length from an inner edge of the opening of the passivation film to a chip edge measured along the surface of the passivation film.Type: GrantFiled: March 18, 2009Date of Patent: November 2, 2010Assignees: DENSO CORPORATION, Toyota Jidosha Kabushiki KaishaInventors: Takeo Yamamoto, Takeshi Endo, Eiichi Okuno, Masaki Konishi
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Publication number: 20100244049Abstract: A silicon carbide semiconductor device with a Schottky barrier diode includes a first conductivity type silicon carbide substrate, a first conductivity type silicon carbide drift layer on a first surface of the substrate, a Schottky electrode forming a Schottky contact with the drift layer, and an ohmic electrode on a second surface of the substrate. The Schottky electrode includes an oxide layer in direct contact with the drift layer. The oxide layer is made of an oxide of molybdenum, titanium, nickel, or an alloy of at least two of these elements.Type: ApplicationFiled: March 23, 2010Publication date: September 30, 2010Applicants: DENSO CORPORATION, TOYOTA JIDOSHA KABUSHIKI KAISHAInventors: Takeo Yamamoto, Takeshi Endo, Eiichi Okuno, Hirokazu Fujiwara, Masaki Konishi, Takashi Katsuno, Yukihiko Watanabe
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Publication number: 20100032730Abstract: A method of making a semiconductor device includes forming a p-type semiconductor region to an n-type semiconductor substrate in such a manner that the p-type semiconductor region is partially exposed to a top surface of the semiconductor substrate, forming a Schottky electrode of a first material in such a manner that the Schottky electrode is in Schottky contact with an n-type semiconductor region exposed to the top surface of the semiconductor substrate, and forming an ohmic electrode of a second material different from the first material in such a manner that the ohmic electrode is in ohmic contact with the exposed p-type semiconductor region. The Schottky electrode is formed earlier than the ohmic electrode.Type: ApplicationFiled: August 4, 2009Publication date: February 11, 2010Applicant: DENSO CORPORATIONInventors: Takeshi Endo, Eiichi Okuno, Takeo Yamamoto, Hirokazu Fujiwara, Masaki Konishi, Yukihiko Watanabe, Takashi Katsuno
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Publication number: 20090267082Abstract: A semiconductor device includes: a semiconductor element having a first surface and a second surface; a first electrode disposed on the first surface of the element; a second electrode disposed on the second surface of the element; and an insulation film covers a part of the first electrode, the first surface of the element and a part of a sidewall of the element. The above semiconductor device has small dimensions and a high breakdown voltage.Type: ApplicationFiled: April 14, 2009Publication date: October 29, 2009Applicant: DENSO CORPORATIONInventors: Takeo Yamamoto, Takeshi Endo, Eiichi Okuno, Masaki Konishi, Hirokazu Fujiwara
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Publication number: 20090269908Abstract: A manufacturing method of a semiconductor device comprises a process of doping conductive impurities in a silicon carbide substrate, a process of forming a cap layer on a surface of the silicon carbide substrate, a process of activating the conductive impurities doped in the silicon carbide substrate, a process of oxidizing the cap layer after a first annealing process, and a process of removing the oxidized cap layer. It is preferred that the cap layer is formed from material that includes metal carbide. Since the oxidation onset temperature of metal carbide is comparatively low, the oxidization of the cap layer becomes easy if metal carbide is included in the cap layer. Specifically, it is preferred that the cap layer is formed from metal carbide that has an oxidation onset temperature of 1000 degrees Celsius or below, such as tantalum carbide.Type: ApplicationFiled: April 20, 2009Publication date: October 29, 2009Applicants: TOYOTA JIDOSHA KABUSHIKI KAISHA, DENSO CORPORATIONInventors: Hirokazu Fujiwara, Masaki Konishi, Takeo Yamamoto, Eiichi Okuno, Yukihiko Watanabe, Takashi Katsuno
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Publication number: 20090236611Abstract: A silicon carbide semiconductor device provided as a semiconductor chip includes a substrate, a drift layer on the substrate, an insulation film on the drift layer, a semiconductor element formed in a cell region of the drift layer, a surface electrode formed on the drift layer and electrically coupled to the semiconductor element through an opening of the insulation film, and a passivation film formed above the drift layer around the periphery of the cell region to cover an outer edge of the surface electrode. The passivation film has an opening through which the surface electrode is exposed outside. A surface of the passivation film is made uneven to increase a length from an inner edge of the opening of the passivation film to a chip edge measured along the surface of the passivation film.Type: ApplicationFiled: March 18, 2009Publication date: September 24, 2009Applicants: DENSO CORPORATION, TOYOTA JIDOSHA KABUSHIKI KAISHAInventors: Takeo YAMAMOTO, Takeshi ENDO, Eiichi OKUNO, Masaki KONISHI