Patents by Inventor Masaki Nagata
Masaki Nagata has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20180172782Abstract: A magnetic field detection device includes a first soft magnetic body, a second soft magnetic body, and a magnetism detection element. The first soft magnetic body extends to have a first length in a first direction, and has a first width, smaller than the first length, in a second direction. The second direction is substantially orthogonal to the first direction. The second soft magnetic body is disposed to be spaced apart from and face the first soft magnetic body in the first direction, extends to have a second length in the first direction, and has a second width, smaller than the second length, in the second direction. The magnetism detection element is disposed, in the first direction, between the first and second soft magnetic bodies, and extends to have a third length in the first direction and a third width, larger than the third length, in the second direction.Type: ApplicationFiled: September 25, 2017Publication date: June 21, 2018Applicant: TDK CORPORATIONInventors: Masaki NAGATA, Kazuya WATANABE, Keisuke UCHIDA, Kohei HONMA, Hiraku HIRABAYASHI
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Publication number: 20180156874Abstract: Provided is a magnetic field detection device that includes a first soft magnetic body and a magnetic detector. The first soft magnetic body includes a first plate and a first protrusion. The first plate includes a first surface including a first outer edge. The first protrusion is provided at a first arrangement position in the first surface and includes a first tip on opposite side to the first surface. The first arrangement position is set back from the first outer edge. The magnetic detector is provided in the vicinity of the first tip.Type: ApplicationFiled: August 25, 2017Publication date: June 7, 2018Applicant: TDK CORPORATIONInventors: Masaki NAGATA, Kazuya WATANABE, Keisuke UCHIDA, Kohei HONMA, Hiraku HIRABAYASHI
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Publication number: 20180114857Abstract: A semiconductor device according to the present invention includes a semiconductor layer, a gate trench defined in the semiconductor layer, a first insulating film arranged on the inner surface of the gate trench, a gate electrode arranged in the gate trench via the first insulating film, and a source layer, a body layer, and a drain layer arranged laterally to the gate trench, in which the first insulating film includes, at least at the bottom of the gate trench, a first portion and a second portion with a film elaborateness lower than that of the first portion from the inner surface of the gate trench in the film thickness direction.Type: ApplicationFiled: April 22, 2016Publication date: April 26, 2018Inventors: Shigenari OKADA, Masaki NAGATA
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Publication number: 20180113176Abstract: Provided is a magnetic field detection device that includes a first and second soft magnetic bodies, and a magnetic detector. The first and second soft magnetic bodies extend along a first plane and are disposed in confronted relation in a third direction. The first plane includes both a first direction and a second direction orthogonal to the first direction. The third direction is orthogonal to both the first and second directions. The magnetic detector is provided between the first and second soft magnetic bodies in the third direction.Type: ApplicationFiled: August 28, 2017Publication date: April 26, 2018Applicant: TDK CORPORATIONInventors: Masaki NAGATA, Kazuya WATANABE, Keisuke UCHIDA, Kohei HONMA, Hiraku HIRABAYASHI
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Publication number: 20170261342Abstract: A rotation angle sensing device is provided with a magnet that is placed to be integrally rotatable with a rotary shaft of a rotating body in association with a rotating body, where the shape of the magnet as viewed along the rotary shaft is substantially circular; a magnetic sensor part that outputs a sensor signal based upon a change in a direction of a magnetic field in association with the rotation of the magnet; and a rotation angle detecting part that detects a rotation angle of the rotating body based upon the sensor signal output by the magnetic sensor part. The magnet has a component of a magnetization vector in a direction that is orthogonal to the rotary shaft.Type: ApplicationFiled: March 3, 2017Publication date: September 14, 2017Inventors: Masaki NAGATA, Hiraku HIRABAYASHI, Yohei HIROTA
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Publication number: 20170261349Abstract: A rotational angle detection apparatus is provoded with a magnet disposed so as to be rotatable integrally with an axis of rotation, having a substantially circular shape when viewed along the axis of rotation, and including a magnetization vector component in a direction orthogonal to the axis of rotation; a magnetic sensor that outputs a sensor signal on the basis of change in a magnetic field accompanying rotation of the magnet; and a rotational angle detector that detects a rotational angle of the rotating body on the basis of the sensor signal output by the magnetic sensor; wherein the magnet has a curved inclined surface with a concave shape along the axis of rotation from a prescribed position on the outer side in a radial direction toward the axis of rotation, and when a circular virtual plane orthogonal to the axis of rotation and centered at the axis of rotation is established at a position opposed to the curved inclined surface, the magnetic sensor is disposed at a position at which the amplitudesType: ApplicationFiled: March 6, 2017Publication date: September 14, 2017Inventors: Masaki NAGATA, Kazuya WATANABE, Hiraku HIRABAYASHI
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Publication number: 20170261347Abstract: A rotation angle sensing device is provided with a magnet that has a component with a magnetization vector in a direction orthogonal to a rotary shaft, a magnetic sensor part that outputs a sensor signal, and a rotation angle sensing part that detects a rotation angle of a rotating body based upon the sensor signal; the magnet has first and second surfaces substantially orthogonal to the rotary shaft, and a concave side surface that is continuous throughout all circumferences in the circumferential direction; the magnetic sensor part is placed within the space surrounded by the concave side surface, and at a position where an amplitude of a magnetic field intensity Hr and an amplitude of a magnetic field intensity H?on the virtual plane are substantially identical to each other, and outputs either the magnetic field intensity Hr or the magnetic field intensity H? as the sensor signal.Type: ApplicationFiled: January 19, 2017Publication date: September 14, 2017Inventors: Masaki NAGATA, Kazuya WATANABE
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Patent number: 9716152Abstract: A semiconductor device according to the present invention includes a semiconductor layer having a trench, a first insulating film formed along an inner surface of the trench, and an upper electrode and a lower electrode embedded in the trench via the first insulating film and disposed above and below a second insulating film. An electric field relaxation portion that relaxes an electric field arising between the upper electrode and the semiconductor layer is provided between a side surface of the trench and a lower end portion of the upper electrode.Type: GrantFiled: August 23, 2016Date of Patent: July 25, 2017Assignees: ROHM CO., LTD., MAXPOWER SEMICONDUCTOR, INC.Inventors: Masaki Nagata, Shigenari Okada, Mohamed Darwish, Jun Zeng, Peter Su
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Publication number: 20170062574Abstract: A semiconductor device according to the present invention includes a semiconductor layer having a trench, a first insulating film formed along an inner surface of the trench, and an upper electrode and a lower electrode embedded in the trench via the first insulating film and disposed above and below a second insulating film. An electric field relaxation portion that relaxes an electric field arising between the upper electrode and the semiconductor layer is provided between a side surface of the trench and a lower end portion of the upper electrode.Type: ApplicationFiled: August 23, 2016Publication date: March 2, 2017Applicants: ROHM CO., LTD., MaxPower Semiconductor, Inc.Inventors: Masaki NAGATA, Shigenari OKADA, Mohamed DARWISH, Jun ZENG, Peter SU
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Patent number: 9581949Abstract: A fixing device includes a belt member that performs a circular motion by rotating in a predetermined belt rotation direction; a pressure-applying member that is pressed against an outer peripheral surface of the belt member and applies a pressure to a recording medium on which an image is formed; and a pressing member that extends in a belt width direction, which is a direction that crosses the belt rotation direction, inside the belt member and that is arranged so as to be deformed such that a central portion thereof in the belt width direction is convex toward an upstream side in the belt rotation direction, the pressing member pressing the pressure-applying member with the belt member interposed therebetween.Type: GrantFiled: January 20, 2016Date of Patent: February 28, 2017Assignee: FUJI XEROX CO., LTD.Inventors: Nobuyoshi Komatsu, Masaki Nagata
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Patent number: 9570604Abstract: A semiconductor device includes an active region, a gate conductor and a source electrode. The active region includes a drain region, a channel region stacked on the drain region, and a source region stacked on the channel region. The active region is formed of a silicon semiconductor layer. The gate conductor is embedded within a trench, which is formed from the source region to the drain region penetrating through the channel region. The source electrode is formed to come in contact with the source region and includes an adhesion layer. The source electrode is formed of a metal layer having a film thickness of 150 ? or smaller. The interface between the source electrode and the source region is silicidized.Type: GrantFiled: April 5, 2016Date of Patent: February 14, 2017Assignee: ROHM CO., LTD.Inventor: Masaki Nagata
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Publication number: 20170010573Abstract: A fixing device includes a belt member that performs a circular motion by rotating in a predetermined belt rotation direction; a pressure-applying member that is pressed against an outer peripheral surface of the belt member and applies a pressure to a recording medium on which an image is formed; and a pressing member that extends in a belt width direction, which is a direction that crosses the belt rotation direction, inside the belt member and that is arranged so as to be deformed such that a central portion thereof in the belt width direction is convex toward an upstream side in the belt rotation direction, the pressing member pressing the pressure-applying member with the belt member interposed therebetween.Type: ApplicationFiled: January 20, 2016Publication date: January 12, 2017Applicant: FUJI XEROX CO., LTD.Inventors: Nobuyoshi KOMATSU, Masaki NAGATA
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Patent number: 9522824Abstract: An object of the present invention is to provide a novel method for producing hydrogen peroxide by direct synthesis that is capable of taking the place of the conventional anthraquinone process, and to provide a catalyst used in the production method. The present invention is a metal complex represented by the following general formula (1), (2), (3) or (4).Type: GrantFiled: August 2, 2013Date of Patent: December 20, 2016Assignees: MITSUBISHI GAS CHEMICAL COMPANY, INC., KYUSHU UNIVERSITY, NATIONAL UNIVERSITY CORPORATIONInventors: Seiji Ogo, Kenji Kato, Masaki Nagata
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Publication number: 20160259282Abstract: A fixing device includes a pressure applying unit that is provided facing a heating unit. The pressure applying unit includes an endless belt-shaped member that rotates by being driven by rotation of the heating unit, and a retainer that retains the endless belt-shaped member in a movable manner. The retainer has an upstream adjuster that is located at an upstream side of the endless belt-shaped member in a rotational direction thereof and that has a curved shape with a center, in a longitudinal direction of the retainer, which is a most bulging area from which the upstream adjuster decreases in height toward opposite ends of the upstream adjuster.Type: ApplicationFiled: September 2, 2015Publication date: September 8, 2016Applicant: FUJI XEROX CO., LTD.Inventors: Nobuyoshi KOMATSU, Masaki NAGATA, Motoi NOYA, Yusuke KANAI
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Publication number: 20160246231Abstract: A fixing device includes a fixing roller, a rotatable endless belt forming a nip between the fixing roller and the belt, a heating member whose heat source heats the nip, a support member disposed in the belt to face the fixing roller and having a surface having a substantially non-arc shape in a rotation direction of the belt and being in contact with an inner surface of the belt to sandwich the belt between the support member and the fixing roller, and a pressing member including guiding members that support and guide end edges of the belt. The guiding members each have a groove having inner and outer walls that guide an edge of the belt in a direction in which a rotation axis of the belt extends and a substantially arc-shaped bottom surface that extends around the axis and along which an end surface of the belt slides.Type: ApplicationFiled: August 31, 2015Publication date: August 25, 2016Applicant: FUJI XEROX CO., LTD.Inventors: Motoi NOYA, Masaki NAGATA, Nobuyoshi KOMATSU, Yusuke KANAI
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Publication number: 20160218210Abstract: A semiconductor device includes an active region, a gate conductor and a source electrode. The active region includes a drain region, a channel region stacked on the drain region, and a source region stacked on the channel region. The active region is formed of a silicon semiconductor layer. The gate conductor is embedded within a trench, which is formed from the source region to the drain region penetrating through the channel region. The source electrode is formed to come in contact with the source region and includes an adhesion layer. The source electrode is formed of a metal layer having a film thickness of 150 ? or smaller. The interface between the source electrode and the source region is silicidized.Type: ApplicationFiled: April 5, 2016Publication date: July 28, 2016Applicant: ROHM CO., LTD.Inventor: Masaki NAGATA
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Patent number: 9324568Abstract: A semiconductor device includes an active region, a gate conductor and a source electrode. The active region includes a drain region, a channel region stacked on the drain region, and a source region stacked on the channel region. The active region is formed of a silicon semiconductor layer. The gate conductor is embedded within a trench, which is formed from the source region to the drain region penetrating through the channel region. The source electrode is formed to come in contact with the source region and includes an adhesion layer. The source electrode is formed of a metal layer having a film thickness of 150 ? or smaller. The interface between the source electrode and the source region is silicidized.Type: GrantFiled: August 26, 2014Date of Patent: April 26, 2016Assignee: ROHM CO., LTD.Inventor: Masaki Nagata
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Publication number: 20150225236Abstract: An object of the present invention is to provide a novel method for producing hydrogen peroxide by direct synthesis that is capable of taking the place of the conventional anthraquinone process, and to provide a catalyst used in the production method. The present invention is a metal complex represented by the following general formula (1), (2), (3) or (4).Type: ApplicationFiled: August 2, 2013Publication date: August 13, 2015Applicants: MITSUBISHI GAS CHEMICAL COMPANY, INC., KYUSHU UNIVERSITY, NATIONAL UNIVERSITY CORPORATIONInventors: Seiji Ogo, Kenji Kato, Masaki Nagata
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Publication number: 20140363939Abstract: A semiconductor device includes an active region, a gate conductor and a source electrode. The active region includes a drain region, a channel region stacked on the drain region, and a source region stacked on the channel region. The active region is formed of a silicon semiconductor layer. The gate conductor is embedded within a trench, which is formed from the source region to the drain region penetrating through the channel region. The source electrode is formed to come in contact with the source region and includes an adhesion layer. The source electrode is formed of a metal layer having a film thickness of 150 ? or smaller. The interface between the source electrode and the source region is silicidized.Type: ApplicationFiled: August 26, 2014Publication date: December 11, 2014Inventor: Masaki NAGATA
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Patent number: 8836021Abstract: A semiconductor device includes an active region, a gate conductor and a source electrode. The active region includes a drain region, a channel region stacked on the drain region, and a source region stacked on the channel region. The active region is formed of a silicon semiconductor layer. The gate conductor is embedded within a trench, which is formed from the source region to the drain region penetrating through the channel region. The source electrode is formed to come in contact with the source region and includes an adhesion layer. The source electrode is formed of a metal layer having a film thickness of 150 ? or smaller. The interface between the source electrode and the source region is silicidized.Type: GrantFiled: February 3, 2012Date of Patent: September 16, 2014Assignee: Rohm Co., Ltd.Inventor: Masaki Nagata