Abstract: A semiconductor processing system includes a common transfer chamber (34) having first and second compartments (46, 48) partitioned by a partition wall (44). First and second vacuum processing apparatuses (32E, 32A) are respectively connected to the first and second compartments (46, 48). A pressure control section (PCS) controls the pressures inside the first and second compartments (46, 48). The pressure control section (PCS) includes first and second vacuum pumps (68, 70) respectively connected to the first and second compartments (46, 48), and a line (76) connecting the delivery side of the second vacuum pump (70) to the suction side of the first vacuum pump (68). The pressure control section (PCS) performs a setting such that a second ultimate pressure or lowest operational pressure of the second compartment (48) is lower than a first ultimate pressure or lowest operational pressure of the first compartment (46).

Abstract: A deposition method for depositing on a substrate includes the step of: using a process medium made by adding a precursor to a medium in a supercritical state. The precursor is added to the medium in the supercritical state where the precursor is dissolved in an organic solvent.

Abstract: A film formation method of forming a film on a fine-pattern by supplying a processing medium that is in the supercritical state in which a precursor is dissolved on a target substrate is disclosed. The film formation method includes a first process of supplying the processing medium on the target substrate, the temperature of which is set at a first temperature that is lower than a film formation minimum temperature that is the lowest temperature at which film formation takes place, and a second process of forming the film on the target substrate by raising the temperature of the target substrate from the first temperature to a second temperature that is higher than the film formation minimum temperature.

Abstract: A vacuum process system comprises: a load port on which an object to be processed is set; a common transfer chamber disposed adjacent to the load port, having an internal space set at an atmospheric pressure level, and including a first transfer device that is movable and transfers the object into/from the load port, the first transfer device being disposed within the internal space; and a process unit having one process chamber for subjecting the object to a predetermined process, and a vacuum transfer chamber connected to the process chamber, having an internal space set at a vacuum pressure level, and including a second transfer device for transferring the object into/from the process chamber, the second transfer device being disposed within the internal space. The process units are individually connected to the common transfer chamber such that the process units are substantially parallel to each other. The vacuum chamber of each process unit is connected to the common transfer chamber.

Abstract: A ceramic heater system has a ceramic heater base having a substrate-mounting surface formed on the top surface thereof and a heater, buried in the heater base, for heating a substrate. A fluid passage is formed buried in the heater base below where the heater is buried. The heater base is cooled as a fluid whose temperature is lower than the temperature of the heater base is let flow in the fluid passage. A substrate processing apparatus has the ceramic heater system installed in a process chamber whose vacuum state can be maintained, a gas supply mechanism for feeding a gas into the process chamber, and a power supply. The substrate processing apparatus performs a heat treatment, etching and film deposition on a substrate placed in the process chamber.

Abstract: A semiconductor processing system includes a common transfer chamber (34) having first and second compartments (46, 48) partitioned by a partition wall (44). First and second vacuum processing apparatuses (32E, 32A) are respectively connected to the first and second compartments (46, 48). A pressure control section (PCS) controls the pressures inside the first and second compartments (46, 48). The pressure control section (PCS) includes first and second vacuum pumps (68, 70) respectively connected to the first and second compartments (46, 48), and a line (76) connecting the delivery side of the second vacuum pump (70) to the suction side of the first vacuum pump (68). The pressure control section (PCS) performs a setting such that a second ultimate pressure or lowest operational pressure of the second compartment (48) is lower than a first ultimate pressure or lowest operational pressure of the first compartment (46).

Abstract: Two load lock chambers 130 and 132 are arranged between a first transfer chamber 122 and a second transfer chamber 133. Each of the load lock chambers is capable of accommodating a single wafer W. The first transfer chamber 122 is provided with a first transfer unit 124 having two substrate holders 124a, 124b each capable of holding a single object to be processed, in order to transport the wafer W among a load port site 120, the first load lock chamber 130, the second load lock chamber 132 and a positioning unit 150. The second transfer chamber 133 is provided with a second transfer unit 156 having two substrate holders 156a, 156b each capable of holding the single object to be processed, in order to transport the wafer between the first load lock chamber 130, the second load lock chamber 132 and respective vacuum processing chambers 158 to 164. Since the volume of each load lock chamber can be minimized, it is possible to perform the prompt control of atmospheres in the load lock chambers.

Abstract: A vacuum process system comprises: a load port on which an object to be processed is set; a common transfer chamber disposed adjacent to the load port, having an internal space set at an atmospheric pressure level, and including a first transfer device that is movable and transfers the object into/from the load port, the first transfer device being disposed within the internal space; and a process unit having one process chamber for subjecting the object to a predetermined process, and a vacuum transfer chamber connected to the process chamber, having an internal space set at a vacuum pressure level, and including a second transfer device for transferring the object into/from the process chamber, the second transfer device being disposed within the internal space. The process units are individually connected to the common transfer chamber such that the process units are substantially parallel to each other. The vacuum chamber of each process unit is connected to the common transfer chamber.

Abstract: An alignment processing mechanism 10 according to the present invention includes: a conveying mechanism 11 for conveying a substrate W to be processed, an alignment mechanism 12 for aligning the substrate W conveyed by the conveying mechanism 11 to a predetermined direction, and a buffer mechanism 13 for relaying the substrate W from the conveying mechanism 11 to the alignment mechanism 12. The buffer mechanism 13 is adapted to temporarily hold the substrate W conveyed by the conveying mechanism 11, and to pass the temporarily holding substrate W to the alignment mechanism 12 based on a state of the alignment mechanism 12. According to the present invention, the alignment mechanism 12 can be used with greater efficiency in order to achieve a high speed of an alignment process.

Abstract: Two load lock chambers 130 and 132 are arranged between a first transfer chamber 122 and a second transfer chamber 133. Each of the load lock chambers is capable of accommodating a single wafer W. The first transfer chamber 122 is provided with a first transfer unit 124 having two substrate holders 124a, 124b each capable of holding a single object to be processed, in order to transport the wafer W among a load port site 120, the first load lock chamber 130, the second load lock chamber 132 and a positioning unit 150. The second transfer chamber 133 is provided with a second transfer unit 156 having two substrate holders 156a, 156b each capable of holding the single object to be processed, in order to transport the wafer between the first load lock chamber 130, the second load lock chamber 132 and respective vacuum processing chambers 158 to 164. Since the volume of each load lock chamber can be minimized, it is possible to perform the prompt control of atmospheres in the load lock chambers.

Abstract: Two load lock chambers 130 and 132 are arranged between a first transfer chamber 122 and a second transfer chamber 133. Each of the load lock chambers is capable of accommodating a single wafer W. The first transfer chamber 122 is provided with a first transfer unit 124 having two substrate holders 124a, 124b each capable of holding a single object to be processed, in order to transport the wafer W among a load port site 120, the first load lock chamber 130, the second load lock chamber 132 and a positioning unit 150. The second transfer chamber 133 is provided with a second transfer unit 156 having two substrate holders 156a, 156b each capable of holding the single object to be processed, in order to transport the wafer between the first load lock chamber 130, the second load lock chamber 132 and respective vacuum processing chambers 158 to 164. Since the volume of each load lock chamber can be minimized, it is possible to perform the prompt control of atmospheres in the load lock chambers.

Abstract: A cassette carrier unit for carrying a cassette, in which a plurality of substrates are housed, into and out of cassette chambers of the multi-chamber system including a hand on which the cassette is mounted. A multi-joined arm for supports the swingable hand, and a base supports the multi-joined swingable arm. The multi-joined arm includes a first shaft member rotatably attached to the hand, a second shaft member rotatably attached to the base, a third shaft member rotated associating with the first shaft member but in a direction reverse to the direction in which the first shaft member is rotated, and a fourth shaft member rotatably attached to the base and to which rotation drive force is transmitted. A first arm is rotatably attached to the first shaft member at the front end thereof and to the second shaft member at the base end thereof.

Abstract: The present invention relates to a surface processing apparatus which performs heating processing of an object of heating which is mounted on a mounting device provided inside a process container, and which includes a plural number of lamps provided so as to oppose a rear surface of a processing surface of an object of processing, a rotating unit which has the plural number of lamps mounted to it in a ring shape, and a drive unit which drives the rotating unit. Also, the present invention relates to a processing apparatus for leading a process gas from a gas supply tube to a gas chamber partitioned inside a process container, and which blows process gas from an outlet of the gas chamber and onto an object of processing which is mounted on a mounting device provided inside the process container, and which includes a plural number of partition plates each provided with a plural number of through holes, being provided at required intervals in a direction of gas flow and inside the gas chamber.

Abstract: A semiconductor wafer receiving apparatus has a base, a table for supporting a wafer, a receiving member having at least three receiving pins which project from a supporting surface and are concealed under the supporting surface upon vertical movement of the table, and a driving unit for vertically moving the table. The wafer is transferred onto the receiving pins while the receiving pins project, and is held on the table while the receiving pins are concealed.

Abstract: A semiconductor wafer receiving apparatus has a base, a table for supporting a wafer, a receiving member having at least three receiving pins which project from a supporting surface and are concealed under the supporting surface upon vertical movement of the table, and a driving unit for vertically moving the table. The wafer is transferred onto the receiving pins while the receiving pins project, and is held on the table while the receiving pins are concealed.

Abstract: A transfer apparatus for carrying a semiconductor wafer into a wafer cassette comprising an arm to load a semiconductor wafer thereon, a moving mechanism to move the arm to a wafer cassette, a chucking device to have a wafer attracted to the arm, and an auxiliary mechanism to push a wafer and adjust the position of the wafer to the inlet of a wafer cassette when the wafer comes into contact with the side wall of the wafer cassette.