Abstract: Apparatus and method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.

Abstract: A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.

Abstract: A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.

Abstract: A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.

Abstract: A method and apparatus for a dual-channel showerhead is provided. In one embodiment the showerhead comprises a body comprising a conductive material having a plurality of first openings formed therethrough comprising a first gas channel and a plurality of second openings formed therethrough comprising a second gas channel that is fluidly separated from the first gas channel, wherein each of the first openings having a geometry that is different than each of the second openings.

Abstract: A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.

Abstract: A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.

Abstract: A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.

Abstract: Apparatus and method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.

Abstract: According to one embodiment, a wireless receiving apparatus includes a receiver, a phase rotation module and a demodulator. The receiver receives a first signal, the first signal being processed a bit conversion, a scramble and an M-phase shift keying modulation processes. The phase rotation module multiplies a first symbol obtained from the first signal with an amount of phase rotation determined by a scramble sequence used for the scramble, to obtain a second symbol. The demodulator demodulates the second symbol by referring to signal points of N-PSK replica signal generated based on a data rate and the bit conversion process and calculates a likelihood obtained from demodulation as a soft decision value.

Abstract: According to one embodiment, a wireless receiving apparatus a calculation module, a detection module and a determination module. The calculation module calculates, for each of modes, correlation values between a received signal and reference signals. The detection module synthesizes the correlation values to generate first correlation value sequences for each of the modes, and to detect at least one second correlation value sequence. The determination module selects a known signal period from the signal periods and a known signal interval from the signal intervals, based on first correlation values included in the second correlation value sequence, and to determine a received signal mode.

Abstract: According to one embodiment, a wireless receiving apparatus includes a calculation module, a first determination module and a second determination module. The second determination module determines a length of interleaver blocks by determining whether or not a maximum value of second correlation value sequence is not less than a second threshold value within a first period, the second correlation value sequence being generated by combining third correlation values being between the receiving signal and each of reference signals, and to determine an initial position of the interleaver blocks based on a position of the maximum value.

Abstract: A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.

Abstract: According to one embodiment, a wireless receiving apparatus includes a calculation module, a first determination module and a second determination module. The second determination module determines a length of interleaver blocks by determining whether or not a maximum value of second correlation value sequence is not less than a second threshold value within a first period, the second correlation value sequence being generated by combining third correlation values being between the receiving signal and each of reference signals, and to determine an initial position of the interleaver blocks based on a position of the maximum value.

Abstract: According to one embodiment, a wireless receiving apparatus a calculation module, a detection module and a determination module. The calculation module calculates, for each of modes, correlation values between a received signal and reference signals. The detection module synthesizes the correlation values to generate first correlation value sequences for each of the modes, and to detect at least one second correlation value sequence. The determination module selects a known signal period from the signal periods and a known signal interval from the signal intervals, based on first correlation values included in the second correlation value sequence, and to determine a received signal mode.

Abstract: According to one embodiment, a wireless receiving apparatus includes a receiver, a phase rotation module and a demodulator. The receiver receives a first signal, the first signal being processed a bit conversion, a scramble and an M-phase shift keying modulation processes. The phase rotation module multiplies a first symbol obtained from the first signal with an amount of phase rotation determined by a scramble sequence used for the scramble, to obtain a second symbol. The demodulator demodulates the second symbol by referring to signal points of N-PSK replica signal generated based on a data rate and the bit conversion process and calculates a likelihood obtained from demodulation as a soft decision value.

Abstract: A fishfinder is provided for identifying with high precision a single fish under the ship and for measuring the length of the fish precisely. An operator of the fishfinder is assisted to grasp the depth and the length of the fish. A fishfinder transmits an ultrasound pulse having a high carrier frequency and an ultrasound pulse having a low carrier frequency by means of a pulse transmission and reception device at predetermined time intervals. A single fish echo is determined and tracked for a plurality of transmission intervals of ultrasound pulses emitted into the water. A target strength of single fish is measured based on the signal strength of a low carrier frequency echo signal from the single fish. The length of the fish is measured based on the target strength. A fish mark is displayed on the screen of an indicator, with the size of the fish mark depending on the fish length.

Abstract: A fishfinder is provided for identifying with high precision a single fish under the ship and for measuring the length of the fish precisely. An operator of the fishfinder is assisted to grasp the depth and the length of the fish. A fishfinder transmits an ultrasound pulse having a high carrier frequency and an ultrasound pulse having a low carrier frequency by means of a pulse transmission and reception device at predetermined time intervals. A single fish echo is determined and tracked for a plurality of transmission intervals of ultrasound pulses emitted into the water. A target strength of single fish is measured based on the signal strength of a low carrier frequency echo signal from the single fish. The length of the fish is measured based on the target strength. A fish mark is displayed on the screen of an indicator, with the size of the fish mark depending on the fish length.

Abstract: An insulating layer and a first silicon system layer are formed on a semiconductor substrate. An opening is formed in the first silicon system layer. A second silicon system layer is provided to cover the first silicon system layer and the opening. The second silicon system layer is etched to form a spacer on an inside wall of the opening so that the opening has a larger diameter at the top and a smaller diameter at the bottom. A protection layer is formed on the spacer; and the insulating layer is etched using the first silicon system layer, spacer and protection layer as a mask to form a contact hole therein.