Abstract: An image processing device is disclosed that includes an image acquisition unit configured to acquire a captured image captured by an imaging device fixed to a moving object; a behavior data acquisition unit configured to acquire behavior data indicating behavior of the moving object when moving; a determination unit configured to determine whether or not the captured image includes scenery outside the moving object; and an image processing unit configured to, when the captured image is determined to include the scenery outside the moving object, perform shake correction processing on the captured image based on the behavior data acquired by the behavior data acquisition unit so as to cancel the shaking of the captured image due to the behavior.

Abstract: A method of manufacturing a semiconductor device includes bonding a first semiconductor wafer including a first substrate and a first insulating layer formed to contact one surface of the first substrate, and a second semiconductor wafer including a second substrate and a second insulating layer, forming a third insulating layer, performing etching so that the second insulating layer remains on a second wiring layer, forming a first connection hole, forming an insulating film on the first connection hole, performing etching of the second insulating layer and the insulating film, forming a second connection hole, and forming a first via formed in inner portions of the connection holes and connected to the second wiring layer, wherein a diameter of the first connection hole formed on the other surface of the first substrate is greater than a diameter of the first connection hole formed on the third insulating layer.

Abstract: Methods and apparatus provide for acquiring position information about a head-mounted display; performing information processing using the position information about the head-mounted display; generating and outputting data of an image to be displayed as a result of the information processing; and generating and outputting data of an image of a user guide indicating position information about a user in a real space using the position information about the head-mounted display, where the image of the user guide represents a state of the real space in which the user is physically located, as viewed obliquely.

Abstract: A highly functional photoelectric conversion element is provided.

Abstract: Provided is an imaging device including: a first semiconductor substrate provided with a photoelectric conversion element, a second semiconductor substrate stacked on the first semiconductor substrate with an interlayer insulating film interposed therebetween and provided with a pixel circuit that reads out charges generated in the photoelectric conversion element as a pixel signal, and a via that penetrates the interlayer insulating film and electrically connects a first surface of the first semiconductor substrate facing the second semiconductor substrate and at least a part of a second surface of the second semiconductor substrate facing the first surface.

Abstract: A sound data processing device includes: a sound data acquisition unit configured to acquire first sound data that is data about a sound whose sound image is localized in a cabin of a vehicle; an object specifying unit configured to specify an attention object that is an object to which an occupant of the vehicle directs attention; a sound data processing unit configured to generate second sound data that is data about the sound for which a sound relating to the attention object is emphasized in comparison with the first sound data; and a sound data output unit configured to output the second sound data to an output device that outputs a sound to the occupant.

Abstract: There is provided a semiconductor device including a first semiconductor base substrate, a second semiconductor base substrate that is bonded onto a first surface side of the first semiconductor base substrate, a through electrode that is formed to penetrate from a second surface side of the first semiconductor base substrate to a wiring layer on the second semiconductor base substrate, and an insulation layer that surrounds a circumference of the through electrode formed inside the first semiconductor base substrate.

Abstract: This technology relates to a solid-state imaging device and an electronic apparatus by which image quality can be enhanced. The solid-state imaging device includes a pixel region in which a plurality of pixels are arranged, a first wiring, a second wiring, and a shield layer. The second wiring is formed in a layer lower than that of the first wiring, and the shield layer is formed in a layer lower at least than that of the first wiring. This technology is applicable to a CMOS image sensor, for example.

Abstract: This technology relates to a solid-state imaging device and an electronic apparatus by which image quality can be enhanced. The solid-state imaging device includes a pixel region in which a plurality of pixels are arranged, a first wiring, a second wiring, and a shield layer. The second wiring is formed in a layer lower than that of the first wiring, and the shield layer is formed in a layer lower at least than that of the first wiring. This technology is applicable to a CMOS image sensor, for example.

Abstract: A method of manufacturing a semiconductor device includes bonding a first semiconductor wafer including a first substrate and a first insulating layer formed to contact one surface of the first substrate, and a second semiconductor wafer including a second substrate and a second insulating layer, forming a third insulating layer, performing etching so that the second insulating layer remains on a second wiring layer, forming a first connection hole, forming an insulating film on the first connection hole, performing etching of the second insulating layer and the insulating film, forming a second connection hole, and forming a first via formed in inner portions of the connection holes and connected to the second wiring layer, wherein a diameter of the first connection hole formed on the other surface of the first substrate is greater than a diameter of the first connection hole formed on the third insulating layer.

Abstract: A method of manufacturing a semiconductor device includes bonding a first semiconductor wafer including a first substrate and a first insulating layer formed to contact one surface of the first substrate, and a second semiconductor wafer including a second substrate and a second insulating layer, forming a third insulating layer, performing etching so that the second insulating layer remains on a second wiring layer, forming a first connection hole, forming an insulating film on the first connection hole, performing etching of the second insulating layer and the insulating film, forming a second connection hole, and forming a first via formed in inner portions of the connection holes and connected to the second wiring layer, wherein a diameter of the first connection hole formed on the other surface of the first substrate is greater than a diameter of the first connection hole formed on the third insulating layer.

Abstract: There is provided a semiconductor device including a first semiconductor base substrate, a second semiconductor base substrate that is bonded onto a first surface side of the first semiconductor base substrate, a through electrode that is formed to penetrate from a second surface side of the first semiconductor base substrate to a wiring layer on the second semiconductor base substrate, and an insulation layer that surrounds a circumference of the through electrode formed inside the first semiconductor base substrate.

Abstract: There is provided a semiconductor device a method for manufacturing a semiconductor device, and an electronic apparatus that comprises a semiconductor device, the semiconductor device including a first chip, a second chip that is bonded onto a first surface side of the first chip, a through electrode that is formed to penetrate from a second surface side of the first chip to a wiring layer on the second semiconductor base substrate, and an insulation layer that is disposed between the through electrode and a semiconductor base substrate in the first chip.

Abstract: A method of manufacturing a semiconductor device includes bonding a first semiconductor wafer including a first substrate and a first insulating layer formed to contact one surface of the first substrate, and a second semiconductor wafer including a second substrate and a second insulating layer, forming a third insulating layer, performing etching so that the second insulating layer remains on a second wiring layer, forming a first connection hole, forming an insulating film on the first connection hole, performing etching of the second insulating layer and the insulating film, forming a second connection hole, and forming a first via formed in inner portions of the connection holes and connected to the second wiring layer, wherein a diameter of the first connection hole formed on the other surface of the first substrate is greater than a diameter of the first connection hole formed on the third insulating layer.

Abstract: Influence of chipping in case of dicing a plurality of stacked substrates is reduced. Provided is a semiconductor device where a substrate, in which a groove surrounding a pattern configured with a predetermined circuit or part is formed, is stacked. The present technology can be applied to, for example, a stacked lens structure where through-holes are formed in each substrate and lenses are disposed in inner sides of the through-holes, a camera module where a stacked lens structure and a light-receiving device are incorporated, a solid-state imaging device where a pixel substrate and a control substrate are stacked, and the like.

Abstract: A method of manufacturing a semiconductor device includes bonding a first semiconductor wafer including a first substrate and a first insulating layer formed to contact one surface of the first substrate, and a second semiconductor wafer including a second substrate and a second insulating layer, forming a third insulating layer, performing etching so that the second insulating layer remains on a second wiring layer, forming a first connection hole, forming an insulating film on the first connection hole, performing etching of the second insulating layer and the insulating film, forming a second connection hole, and forming a first via formed in inner portions of the connection holes and connected to the second wiring layer, wherein a diameter of the first connection hole formed on the other surface of the first substrate is greater than a diameter of the first connection hole formed on the third insulating layer.

Abstract: There is provided a semiconductor device a method for manufacturing a semiconductor device, and an electronic apparatus that comprises a semiconductor device, the semiconductor device including a first chip, a second chip that is bonded onto a first surface side of the first chip, a through electrode that is formed to penetrate from a second surface side of the first chip to a wiring layer on the second semiconductor base substrate, and an insulation layer that is disposed between the through electrode and a semiconductor base substrate in the first chip.

Abstract: A shield connector includes a first housing and a second housing, a first shield shell configured to cover the first housing, and a second shield shell configured to cover the second housing. The first shield shell includes a first connecting portion and the second shield shell includes a second connecting portion. An electrically conductive fastening member electrically connects the first connecting portion and the second connecting portion to each other. The first housing includes a first fixing portion, and the second housing includes a second fixing portion. The first fixing portion and the second fixing portion are held together by the fastening member in a state in which the first fixing portion and the second fixing portion are interposed between the first connecting portion and the second connecting portion.

Abstract: A shield connector includes a first housing and a second housing, a first shield shell configured to cover the first housing, and a second shield shell configured to cover the second housing. The first shield shell includes a first connecting portion and the second shield shell includes a second connecting portion. An electrically conductive fastening member electrically connects the first connecting portion and the second connecting portion to each other. The first housing includes a first fixing portion, and the second housing includes a second fixing portion. The first fixing portion and the second fixing portion are held together by the fastening member in a state in which the first fixing portion and the second fixing portion are interposed between the first connecting portion and the second connecting portion.

Abstract: There is provided a semiconductor device and an electronic apparatus that comprises a semiconductor device, the semiconductor device including a first chip, a second chip that is bonded onto a first surface side of the first chip, a through electrode that is formed to penetrate from a second surface side of the first chip to a second wiring layer on the second semiconductor base substrate, and an insulation layer that is disposed between the through electrode and a semiconductor base substrate in the first chip.