Abstract: An object detection device includes: a light emitter that emits light; a sensor that generates a first pixel signal by exposure to reflected light according to a combination of emission by the light emitter and first exposure and a second pixel signal by exposure to reflected light according to a combination of the emission and second exposure; and a distance calculator that generates a distance image by ratio operation using the first pixel signal and the second pixel signal. Timing of the first exposure is set to timing during which the sensor is not exposed to reflected waves from an object included in a first section in which a distance from the object detection device is from 0 to a predetermined value. A time difference between the emission and the second exposure is greater than a time difference between the emission and the first exposure.

Abstract: An object detecting device includes: a first luminance obtainer and a distance obtainer that obtain a first luminance image and a depth image, respectively; a first clustering unit that generates a group that is a set of pixels taken as the same object in the depth image, and determines that the group is a cluster when a total number of pixels included in the group is at least a first threshold; a second clustering unit that determines that the group is a cluster, when (i) the total number of pixels included in the group is less than the first threshold and (ii) luminance of a pixel group in the first luminance image which corresponds to the group is at least a second threshold; and a 3D object detector that generates 3D object information indicating an object in the depth image which is detected based on the cluster.

Abstract: A semiconductor device includes: a memory transistor including a first silicon oxide film, a first silicon nitride film, a second silicon oxide film, and a first gate electrode that are disposed in sequence on a substrate; and a MOS transistor including a third silicon oxide film and a second gate electrode that are disposed in sequence on the substrate. The memory transistor has a side wall including an extending portion of the first silicon oxide film, a second silicon nitride film that is in contact with the first silicon nitride film, and a fourth silicon oxide film that are disposed in sequence on the substrate, and the MOS transistor has a side wall including a fifth silicon oxide film that is disposed on the substrate.

Abstract: A semiconductor device includes: a memory transistor including a first silicon oxide film, a first silicon nitride film, a second silicon oxide film, and a first gate electrode that are disposed in sequence on a substrate; and a MOS transistor including a third silicon oxide film and a second gate electrode that are disposed in sequence on the substrate. The memory transistor has a side wall including an extending portion of the first silicon oxide film, a second silicon nitride film that is in contact with the first silicon nitride film, and a fourth silicon oxide film that are disposed in sequence on the substrate, and the MOS transistor has a side wall including a fifth silicon oxide film that is disposed on the substrate.

Abstract: A first impurity diffusion region is provided within a semiconductor substrate, a second impurity diffusion region is provided within the first impurity diffusion region, a third impurity diffusion region is provided within the second impurity diffusion region, a first portion of a fourth impurity diffusion region is provided within the second impurity diffusion region so as to be spaced from the third impurity diffusion region, and a second portion of the fourth impurity diffusion region is provided in a third portion of the first impurity diffusion region on a side of a surface of the semiconductor substrate, a first contact is provided so as to be in contact with the second portion, the first contact and the third portion overlap in plan view, and a first power supply is connected to the third impurity diffusion region.

Abstract: A first impurity diffusion region is provided within a semiconductor substrate, a second impurity diffusion region is provided within the first impurity diffusion region, a third impurity diffusion region is provided within the second impurity diffusion region, a first portion of a fourth impurity diffusion region is provided within the second impurity diffusion region so as to be spaced from the third impurity diffusion region, and a second portion of the fourth impurity diffusion region is provided in a third portion of the first impurity diffusion region on a side of a surface of the semiconductor substrate, a first contact is provided so as to be in contact with the second portion, the first contact and the third portion overlap in plan view, and a first power supply is connected to the third impurity diffusion region.

Abstract: A first impurity diffusion region is provided within a semiconductor substrate, a second impurity diffusion region is provided within the first impurity diffusion region, a third impurity diffusion region is provided within the second impurity diffusion region, a first portion of a fourth impurity diffusion region is provided within the second impurity diffusion region so as to be spaced from the third impurity diffusion region, and a second portion of the fourth impurity diffusion region is provided in a third portion of the first impurity diffusion region on a side of a surface of the semiconductor substrate, a first contact is provided so as to be in contact with the second portion, the first contact and the third portion overlap in plan view, and a first power supply is connected to the third impurity diffusion region.

Abstract: A first impurity diffusion region is provided within a semiconductor substrate, a second impurity diffusion region is provided within the first impurity diffusion region, a third impurity diffusion region is provided within the second impurity diffusion region, a first portion of a fourth impurity diffusion region is provided within the second impurity diffusion region so as to be spaced from the third impurity diffusion region, and a second portion of the fourth impurity diffusion region is provided in a third portion of the first impurity diffusion region on a side of a surface of the semiconductor substrate, a first contact is provided so as to be in contact with the second portion, the first contact and the third portion overlap in plan view, and a first power supply is connected to the third impurity diffusion region.

Abstract: A cosmetic composition for eyelashes is disclosed which is excellent in make-up effects (long lash effect) such as making eyelashes appear longer and emphasizing eyes, and in long-lasting property of such make-up effects, exhibiting favorable usability, providing a uniform make-up film, and is also satisfactory in terms of stability. Provided is a cosmetic composition for eyelashes including: (A) polypropylene fibers having the thickness of 0.1 to 12 denier, and the length of 0.1 to 3 mm; and (B) an oil soluble resin.

Abstract: A cosmetic composition for eyelashes is disclosed which is excellent in make-up effects (long lash effect) such as making eyelashes appear longer and emphasizing eyes, and in long-lasting property of such make-up effects, exhibiting favorable usability, providing a uniform make-up film, and is also satisfactory in terms of stability. Provided is a cosmetic composition for eyelashes including: (A) polypropylene fibers having the thickness of 0.1 to 12 denier, and the length of 0.1 to 3 mm; and (B) an oil soluble resin.

Abstract: A paper feeder is arranged so that a hand-carry type portable printer per se is mounted thereon, and a magnetic repulsion and/or a mechanical engagement are utilized to properly orientate and position the printer with respect to the base frame, when mounting the printer on the base frame.

Abstract: A paper feeder is arranged so that a hand-carry type portable printer per se is mounted thereon, and a magnetic repulsion and/or a mechanical engagement are utilized to properly orientate and position the printer with respect to the base frame, when mounting the printer on the base frame.

Abstract: A retaining device for an electronic apparatus comprising a plurality of cases respectively containing individual component mechanisms of a small electronic apparatus, a magnet disposed in a recess formed in a surface of a first case among the plurality of cases; and a magnetic member provided on a second case among the plurality of cases. In this device, the magnet attracts the magnetic member to fix the respective positions of the first case and the second case relative to each other when the first case and the second case are set contiguously with the magnet and the magnetic member disposed opposite to each other.

Abstract: A retaining device for an electronic apparatus comprising a plurality of cases respectively containing individual component mechanisms of a small electronic apparatus, a magnet disposed in a recess formed in a surface of a first case among the plurality of cases and a magnetic member provided on a second case among the plurality of cases. In this device, the magnet (60) attracts the magnetic member to fix the respective positions of the first case and the second case relative to each other when the first case and the second case are set contiguously with the magnet and the magnetic member disposed opposite to each other.

Abstract: The present invention relates to a portable printer suitable for hand-carrying and transporting, and provides a portable printer which is easily carried and transported and provides less possibility of damage to the printing mechanism, and comprises a plurality of casings 1, 2, a printing mechanism 10 housed in the casing 1, 2 for performing a printing of a paper 100, and connecting means 3 for connecting the plurality of casings 1, 2 by mating wider surfaces 1a and 2a among outer surfaces of the casings 1, 2 when a printing of the paper 100 by the printing mechanism 10 is performed, and when a printing is not performed, the relative positional relationship of the plurality of casings 1, 2 can be varied to form an essentially flat configuration overall.

Abstract: A photohardenable material is disclosed. The material is comprised of a copolymer (I') having ethylenically unsaturated bonds and having an acid value of about 5 to 180 and a molecular weight of about 1,500 to 100,000. The copolymer (I') is obtained by reacting carboxyl groups with a copolymer represented by the structural formula (I), as defined within the application. The material is further comprised of a copolymer (II) having a molecular weight of about 50,000 to 500,000. The copolymer (II) is comprised of three monomers whose structural formula is also defined within the application. The material is further comprised of a cross-linking agent having two or more ethylenically unsaturated bonds and a photoactivator. The copolymers (I') and (II) are present in a ratio of about 0.5 to 20.