Abstract: A high-quality image is taken by a solid-state imaging element that detects an address event. The solid-state imaging element is provided with a pixel array unit and an analog-to-digital conversion unit. In the pixel array unit in the solid-state imaging element, a normal pixel that generates an analog signal by photoelectric conversion of incident light and outputs the analog signal and a detection pixel that detects that an amount of change in incident light becomes larger than a predetermined threshold and outputs a detection result are arranged. Furthermore, the analog-to-digital conversion unit converts the analog signal into a digital signal.

Abstract: A light-emitting element includes an anode electrode, a QD layer containing QDs, and a cathode electrode, in which the QDs are Cd-free quantum dots having a core-shell structure including a core containing at least Ag, Ga, and at least one of S and Se, and a shell containing at least Zn, and exhibit fluorescence characteristics with a fluorescence full-width at half-maximum of 40 nm or less and a fluorescence quantum yield percentage of 70% or more.

Abstract: A sensor device according to the present technology includes an SPAD element, a detection unit that detects a photon reception reaction by the SPAD element to output a pulse indicating the photon reception reaction, and, in response to the pulse output, resets a state of own to a state in which a photon reception reaction is detectable, and a pulse count unit that counts the number of the pulses output by the detection unit.

Abstract: A light-emitting element includes an anode electrode, a cathode electrode, and a QD layer provided between the anode electrode and the cathode electrode, the QD layer containing the QDs. The QDs are AgInxGa1-xSySe1-y-based or ZnAgInxGa1-xSySe1-y-based Cd-free QDs (0?x<1, 0?y?1) and exhibit fluorescence characteristics having a fluorescent half width of 45 nm or less and a fluorescence quantum yield of 35% or more in a green wavelength region to a red wavelength region.

Abstract: A high-quality image is taken by a solid-state imaging element that detects an address event. The solid-state imaging element is provided with a pixel array unit and an analog-to-digital conversion unit. In the pixel array unit in the solid-state imaging element, a normal pixel that generates an analog signal by photoelectric conversion of incident light and outputs the analog signal and a detection pixel that detects that an amount of change in incident light becomes larger than a predetermined threshold and outputs a detection result are arranged. Furthermore, the analog-to-digital conversion unit converts the analog signal into a digital signal.

Abstract: A solid-state imaging element that detects address events captures high-quality images. The solid-state imaging element includes a pixel array section that has a plurality of pixels including a specific pixel arranged in a two-dimensional lattice pattern. The specific pixel includes a pixel circuit and two analog-digital converters. The pixel circuit outputs two analog signals proportional to an amount of charge produced by photoelectric conversion. The analog-digital converters convert the respective two analog signals into digital signals with different resolutions.

Abstract: The present disclosure relates to a comparator, an AD converter, a solid-state imaging device, an electronic apparatus, and a comparator control method that can reduce power consumption while increasing the determination speed of the comparator. The comparator includes a comparison unit, a positive feedback circuit, and a current limiting unit. The comparison unit compares the voltage of an input signal and the voltage of a reference signal, and outputs a comparison result signal. The positive feedback circuit increases the transition speed at the time when the comparison result signal is inverted. The current limiting unit limits the current flowing in the comparison unit after the inversion of the comparison result signal. The present disclosure can be applied to comparators, for example.

Abstract: The present disclosure relates to a solid-state electronic circuit, an image pickup element, a method of controlling the image pickup element, and an electronic device that enable inhibition of a deterioration in yield due to densification of image pickup elements. Wiring replacement units are provided between a plurality of transfer paths allowing bitwise transfer of a predetermined bit length of time code for use in conversion of a pixel signal corresponding to a quantity of light received in a pixel into a digital signal. In a case where an error has occurred in any of the plurality of transfer paths, replacement with the transfer path lowest in priority is performed. The present disclosure can be applied to image pickup elements.

Abstract: The present invention is a solid-state imaging device including: a pixel array section including a plurality of unit pixels capable of accumulating charge photoelectrically converted by a photoelectric conversion section in a predetermined floating diffusion (FD) region; a system control section that controls the pixel array section; and a pixel signal reading mechanism that reads a pixel signal based on the charge from the predetermined FD region of a unit pixel of the plurality of unit pixels under control of the system control section. The pixel signal reading mechanism may include an AD converter that performs AD conversion processing on the pixel signal read, and a determination section that performs brightness/darkness determination of light received by the unit pixel on the basis of the pixel signal read in a determination phase.

Abstract: The present disclosure relates to a comparator, an AD converter, a solid-state imaging device, an electronic apparatus, and a comparator control method that can reduce power consumption while increasing the determination speed of the comparator. The comparator includes a comparison unit, a positive feedback circuit, and a current limiting unit. The comparison unit compares the voltage of an input signal and the voltage of a reference signal, and outputs a comparison result signal. The positive feedback circuit increases the transition speed at the time when the comparison result signal is inverted. The current limiting unit limits the current flowing in the comparison unit after the inversion of the comparison result signal. The present disclosure can be applied to comparators, for example.

Abstract: The present disclosure relates to a solid state imaging device and an electronic device from which a holding unit for holding information in a pixel can be eliminated. When a charge distribution unit distributes a pixel signal SIG to a first ADC, a pixel signal representing only reflection light is divided for allocation. When the charge distribution unit distributes a pixel signal SIG to a second ADC, a pixel signal representing background light and reflection light (partial) is divided for allocation. When the charge distribution unit distributes a pixel signal SIG to a third ADC, a pixel signal representing background light and reflection light (the rest) is divided for allocation. During a period in which no signal is acquired, a discharge transistor functions as an overflow portion for releasing electrical charge. The present disclosure can be applied to, for example, a solid state imaging device used for an imaging device.

Abstract: To reduce a circuit scale in a solid-state image sensor that detects an address event. The solid-state image sensor includes a pixel array unit and a drive circuit. In the solid-state image sensor, in the pixel array unit, a logarithmic response pixel that outputs an analog signal proportional to a logarithmic value of an incident light amount and a detection pixel that detects whether or not a change amount of the incident light amount has exceeded a predetermined threshold and outputs a detection signal indicating a detection result are arrayed. Furthermore, in the solid-state image sensor, the drive circuit drives the logarithmic response pixel and the detection pixel to output the analog signal and the detection signal.

Abstract: The present technology relates to an imaging apparatus and electronic equipment that can reduce noise. A photoelectric conversion element, a conversion unit that converts a signal from the photoelectric conversion element into a digital signal, a bias circuit that supplies a bias current for controlling a current flowing through an analog circuit in the conversion unit, and a control unit that controls the bias circuit on the basis of an output signal from the conversion unit are provided, and at the start of transfer of a charge from the photoelectric conversion element, the control unit boosts a voltage at a predetermined position of the analog circuit. The conversion unit converts the signal from the photoelectric conversion element into a digital signal using a slope signal whose level monotonously decreases with time. The present technology is applicable to, for example, an imaging apparatus.

Abstract: A solid-state imaging element including a well improves area efficiency while reducing malfunction of a circuit on the well. The solid-state imaging element includes a first well, a second well, a first circuit, and a second circuit. The first well contains an impurity having a polarity identical to a polarity of an impurity in a substrate. The second well contains an impurity having a polarity identical to the polarity of the impurity in the substrate and is disposed adjacent to the first well. The first circuit is disposed on the first well and generates noise in a predetermined period. The second circuit is disposed on the second well and generates noise in a period different from the predetermined period.

Abstract: Sensing devices configured to detect photons with high accuracy regardless of environmental illuminance are disclosed. In one example, a sensing device includes a photodetector and a load element connected between the photodetector and a first reference potential. A first transistor is configured to be turned on according to a voltage of a node between the photodetector and the load element. A second transistor is configured to turn on according to either a current of the first transistor or a voltage of a second signal line. A third transistor of an opposite conductivity type to the first and second transistors is configured to turn on according to the voltage of the second signal line. A first inverter is connected between a node between the first transistor and the third transistor and a fourth signal line.

Abstract: The present disclosure relates to a comparator, an AD converter, a solid-state imaging device, an electronic apparatus, and a comparator control method that can reduce power consumption while increasing the determination speed of the comparator. The comparator includes a comparison unit, a positive feedback circuit, and a current limiting unit. The comparison unit compares the voltage of an input signal and the voltage of a reference signal, and outputs a comparison result signal. The positive feedback circuit increases the transition speed at the time when the comparison result signal is inverted. The current limiting unit limits the current flowing in the comparison unit after the inversion of the comparison result signal. The present disclosure can be applied to comparators, for example.

Abstract: The present disclosure relates to a comparator, an AD converter, a solid-state imaging device, an electronic apparatus, and a comparator control method that can reduce power consumption while increasing the determination speed of the comparator. The comparator includes a comparison unit, a positive feedback circuit, and a current limiting unit. The comparison unit compares the voltage of an input signal and the voltage of a reference signal, and outputs a comparison result signal. The positive feedback circuit increases the transition speed at the time when the comparison result signal is inverted. The current limiting unit limits the current flowing in the comparison unit after the inversion of the comparison result signal. The present disclosure can be applied to comparators, for example.

Abstract: The present disclosure relates to a sensor element and an electronic device that can further reduce noise. In a solid-state imaging apparatus that performs AD conversion in a pixel, a comparator circuit included in the pixel at least has: a comparing unit that compares a pixel signal output from a pixel circuit with a reference signal which is a slope signal whose level monotonously decreases with time; a band limiting unit that performs band limiting by narrowing a band of a signal that changes according to a result of comparison by the comparing unit; and an amplification unit that amplifies the signal whose band has been limited through the band limiting unit. The present technology can be applied to a solid-state imaging apparatus that performs AD conversion in a pixel, for example.

Abstract: To reduce a circuit scale in a solid-state image sensor that detects an address event. The solid-state image sensor includes a pixel array unit and a drive circuit. In the solid-state image sensor, in the pixel array unit, a logarithmic response pixel that outputs an analog signal proportional to a logarithmic value of an incident light amount and a detection pixel that detects whether or not a change amount of the incident light amount has exceeded a predetermined threshold and outputs a detection signal indicating a detection result are arrayed. Furthermore, in the solid-state image sensor, the drive circuit drives the logarithmic response pixel and the detection pixel to output the analog signal and the detection signal.

Abstract: Erroneous detection caused by flicker is suppressed in a solid-state imaging element that detects an address event. solid-state imaging element includes a plurality of pixels, a current detection unit, and a threshold control unit. In the solid-state imaging element, each of the plurality of pixels compares an amount of change in a voltage corresponding to a photocurrent with a predetermined threshold. Further, the current detection unit detects a sum of the photocurrents of the respective plurality of pixels as a total current. Further, the threshold control unit controls the predetermined threshold to a value corresponding to the total current detected by the current detection unit.