Patents by Inventor Masaki Shima
Masaki Shima has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8957351Abstract: In a catalytic CVD equipment, a holder includes an antireflective structure for preventing reflection of a radiant ray that is ejected from the catalytic wire toward the side of the substrate.Type: GrantFiled: March 30, 2012Date of Patent: February 17, 2015Assignees: SANYO Electric Co., Ltd., ULVAC, Inc.Inventors: Masaki Shima, Yoshinori Wakamiya, Shuji Osono, Satohiro Okayama, Hideyuki Ogata
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Patent number: 8835196Abstract: The purpose of the present invention is to favorably modify a transparent conductive film and provide a transparent conductive film with few grain boundaries. In the manufacturing method for the transparent conductive film of the present invention, a transparent conductive film 3 is formed on a substrate 2 inside a vacuum chamber 10, after which radiant heat is imparted from a surface modifying device 4 arranged near the substrate 2 to modify the transparent conductive film 3, and the substrate 2 having the modified transparent conductive film 3 is removed from the vacuum chamber 10.Type: GrantFiled: September 17, 2013Date of Patent: September 16, 2014Assignee: SANYO Electric Co., Ltd.Inventor: Masaki Shima
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Patent number: 8835210Abstract: The present invention reduces the time required to manufacture a solar cell. After etching main surfaces (10B1, 10B2) of a crystalline silicon substrate (10B) using one etching solution, the main surfaces (10B1, 10B2) of the crystalline silicon substrate (10B) are etched at a lower etching rate than the etching performed using the one etching solution by using another etching solution that has a higher concentration of etching components than the one etching solution. In this way, a textured structure is formed in the main surfaces (10B1, 10B2) of the crystalline silicon substrate (10B).Type: GrantFiled: November 27, 2013Date of Patent: September 16, 2014Assignee: Sanyo Electric Co., Ltd.Inventors: Takuo Nakai, Naoki Yoshimura, Masaki Shima
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Publication number: 20140162394Abstract: Provided is a method for manufacturing a solar cell with improved output characteristics. A hydrogen radical treatment, in which ions are not used, is performed on at least one of the first and second semiconductor layers (11, 13).Type: ApplicationFiled: November 26, 2013Publication date: June 12, 2014Applicant: SANYO ELECTRIC CO., LTD.Inventors: Motohide Kai, Tomonori Ueyama, Masaki Shima
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Publication number: 20140080246Abstract: The present invention reduces the time required to manufacture a solar cell. After etching main surfaces (10B1, 10B2) of a crystalline silicon substrate (10B) using one etching solution, the main surfaces (10B1, 10B2) of the crystalline silicon substrate (10B) are etched at a lower etching rate than the etching performed using the one etching solution by using another etching solution that has a higher concentration of etching components than the one etching solution. In this way, a textured structure is formed in the main surfaces (10B1, 10B2) of the crystalline silicon substrate (10B).Type: ApplicationFiled: November 27, 2013Publication date: March 20, 2014Applicant: Sanyo Electric Co., Ltd.Inventors: Takuo Nakai, Naoki Yoshimura, Masaki Shima
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Publication number: 20140073083Abstract: A manufacturing method for a solar cell having improved output characteristics is provided. After forming a p-side transparent conductive oxide layer (15), an n-side transparent conductive oxide layer (16) is formed.Type: ApplicationFiled: November 21, 2013Publication date: March 13, 2014Applicant: Sanyo Electric Co., Ltd.Inventors: Masaki Shima, Yoshihiro Matsubara
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Publication number: 20140017849Abstract: The purpose of the present invention is to favorably modify a transparent conductive film and provide a transparent conductive film with few grain boundaries. In the manufacturing method for the transparent conductive film of the present invention, a transparent conductive film 3 is formed on a substrate 2 inside a vacuum chamber 10, after which radiant heat is imparted from a surface modifying device 4 arranged near the substrate 2 to modify the transparent conductive film 3, and the substrate 2 having the modified transparent conductive film 3 is removed from the vacuum chamber 10.Type: ApplicationFiled: September 17, 2013Publication date: January 16, 2014Applicant: Sanyo Electric Co., Ltd.Inventor: Masaki Shima
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Patent number: 8513047Abstract: In accordance with the present invention, the dividing grooves 8 are formed so as not to be parallel to cleavage planes of the semiconductor substrate 1, and the semiconductor substrate 1 is bent along the dividing grooves 8, whereby the semiconductor substrate 1 is fractured along the dividing grooves 8.Type: GrantFiled: November 29, 2012Date of Patent: August 20, 2013Assignee: Sanyo Electric Co., Ltd.Inventors: Hiroyuki Kannou, Masaki Shima
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Patent number: 8389320Abstract: In accordance with the present invention, the dividing grooves 8 are formed so as not to be parallel to cleavage planes of the semiconductor substrate 1, and the semiconductor substrate 1 is bent along the dividing grooves 8, whereby the semiconductor substrate 1 is fractured along the dividing grooves 8.Type: GrantFiled: March 12, 2008Date of Patent: March 5, 2013Assignee: Sanyo Electric Co., Ltd.Inventors: Hiroyuki Kannou, Masaki Shima
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Patent number: 8383927Abstract: A back metal electrode, a bottom cell using microcrystalline silicon for a photoelectric conversion layer, a front cell using amorphous silicon for a photoelectric conversion layer, and a transparent front electrode are formed in this order on a supporting substrate. At least one of the concentration of impurities contained in the front photoelectric conversion layer and the concentration of impurities contained in the bottom photoelectric conversion layer is controlled such that the concentration of impurities in the bottom photoelectric conversion layer is higher than the concentration of impurities in the front photoelectric conversion layer. Impurities do not include a p-type dopant or an n-type dopant but are any one, two, or all of carbon, nitrogen, and oxygen.Type: GrantFiled: November 18, 2011Date of Patent: February 26, 2013Assignee: SANYO Electric Co., Ltd.Inventors: Masaki Shima, Kunimoto Ninomiya
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Patent number: 8263859Abstract: An aspect of the present invention provides a stacked photovoltaic device that comprises a first power generating unit including a first semiconductor layer made of a substantially intrinsic non-single crystal semiconductor layer which functions as a photoelectric conversion layer; and a second power generating unit formed above the first power generating unit, the second power generating unit including a second semiconductor layer made of a substantially intrinsic non-crystalline semiconductor layer which functions as a photoelectric conversion layer. In the stacked photovoltaic device, a first density of an element mainly constituting the first semiconductor layer of the first power generating unit is lower than a second density of an element mainly constituting the second semiconductor layer of the second power generating unit.Type: GrantFiled: April 27, 2006Date of Patent: September 11, 2012Assignee: SANYO Electric Co., Ltd.Inventor: Masaki Shima
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Publication number: 20120190149Abstract: In a catalytic CVD equipment, a holder includes an antireflective structure for preventing reflection of a radiant ray that is ejected from the catalytic wire toward the side of the substrate.Type: ApplicationFiled: March 30, 2012Publication date: July 26, 2012Applicants: ULVAC, INC., SANYO ELECTRIC CO., LTD.Inventors: Masaki SHIMA, Yoshinori WAKAMIYA, Shuji OSONO, Satohiro OKAYAMA, Hideyuki OGATA
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Publication number: 20120060893Abstract: A back metal electrode, a bottom cell using microcrystalline silicon for a photoelectric conversion layer, a front cell using amorphous silicon for a photoelectric conversion layer, and a transparent front electrode are formed in this order on a supporting substrate. At least one of the concentration of impurities contained in the front photoelectric conversion layer and the concentration of impurities contained in the bottom photoelectric conversion layer is controlled such that the concentration of impurities in the bottom photoelectric conversion layer is higher than the concentration of impurities in the front photoelectric conversion layer. Impurities do not include a p-type dopant or an n-type dopant but are any one, two, or all of carbon, nitrogen, and oxygen.Type: ApplicationFiled: November 18, 2011Publication date: March 15, 2012Applicant: SANYO ELECTRIC CO., LTD.Inventors: Masaki SHIMA, Kunimoto NINOMIYA
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Patent number: 8124867Abstract: A back metal electrode, a bottom cell using microcrystalline silicon for a photoelectric conversion layer, a front cell using amorphous silicon for a photoelectric conversion layer, and a transparent front electrode are formed in this order on a supporting substrate. At least one of the concentration of impurities contained in the front photoelectric conversion layer and the concentration of impurities contained in the bottom photoelectric conversion layer is controlled such that the concentration of impurities in the bottom photoelectric conversion layer is higher than the concentration of impurities in the front photoelectric conversion layer. Impurities do not include a p-type dopant or an n-type dopant but are any one, two, or all of carbon, nitrogen, and oxygen.Type: GrantFiled: July 14, 2010Date of Patent: February 28, 2012Assignee: Sanyo Electric Co., Ltd.Inventors: Masaki Shima, Kunimoto Ninomiya
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Patent number: 7952018Abstract: A stacked photovoltaic apparatus capable of improving the output characteristics is provided. This stacked photovoltaic apparatus comprises a second power generation unit including a second semiconductor layer having a first refractive index and a third semiconductor layer of an amorphous semiconductor functioning as a photoelectric conversion layer, an intermediate layer formed between a first power generation unit and the second power generation unit with a second refractive index and a reflection promotive layer formed between the intermediate layer and the second power generation unit with such a third refractive index that the difference between the third refractive index and the first refractive index is larger than the difference between the second refractive index and the first refractive index.Type: GrantFiled: April 24, 2006Date of Patent: May 31, 2011Assignee: Sanyo Electric Co., Ltd.Inventors: Masaki Shima, Machie Saitou
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Patent number: 7923625Abstract: A back metal electrode, a bottom cell using microcrystalline silicon for a photoelectric conversion layer, a front cell using amorphous silicon for a photoelectric conversion layer, and a transparent front electrode are formed in this order on a supporting substrate. At least one of the concentration of impurities contained in the front photoelectric conversion layer and the concentration of impurities contained in the bottom photoelectric conversion layer is controlled such that the concentration of impurities in the bottom photoelectric conversion layer is higher than the concentration of impurities in the front photoelectric conversion layer. Impurities do not include a p-type dopant or an n-type dopant but are any one, two, or all of carbon, nitrogen, and oxygen.Type: GrantFiled: February 28, 2006Date of Patent: April 12, 2011Assignee: Sanyo Electric Co., Ltd.Inventors: Masaki Shima, Kunimoto Ninomiya
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Publication number: 20110020974Abstract: A stacked photovoltaic device which includes a first photovoltaic unit having an amorphous silicon layer 8 as a photoelectric conversion layer, and a second photovoltaic unit having a microcrystalline silicon layer 5 as a photoelectric conversion layer and succeeding backwardly from the first photovoltaic unit closer to a light incidence plane. The microcrystalline silicon layer 5 serving as the photoelectric conversion layer in the second photovoltaic unit has a ratio ?2 (?I(Si—O)/I(Si—H)) greater than a ratio ?1 (?I(Si—O)/I(Si—H)) of the amorphous silicon layer 8 serving as the photoelectric conversion layer in the first photovoltaic unit, where I(Si—O) is a peak area for the Si—O stretching mode of each silicon layer and I(Si—H) is a peak area for the Si—H stretching mode of each silicon layer when the amorphous and microcrystalline silicon layers 8 and 5 are measured by infrared absorption spectroscopy.Type: ApplicationFiled: October 7, 2010Publication date: January 27, 2011Applicant: SANYO ELECTRIC CO., LTD.Inventor: Masaki SHIMA
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Publication number: 20100275970Abstract: A back metal electrode, a bottom cell using microcrystalline silicon for a photoelectric conversion layer, a front cell using amorphous silicon for a photoelectric conversion layer, and a transparent front electrode are formed in this order on a supporting substrate. At least one of the concentration of impurities contained in the front photoelectric conversion layer and the concentration of impurities contained in the bottom photoelectric conversion layer is controlled such that the concentration of impurities in the bottom photoelectric conversion layer is higher than the concentration of impurities in the front photoelectric conversion layer. Impurities do not include a p-type dopant or an n-type dopant but are any one, two, or all of carbon, nitrogen, and oxygen.Type: ApplicationFiled: July 14, 2010Publication date: November 4, 2010Applicant: Sanyo Electric Co., Ltd.Inventors: Masaki SHIMA, Kunimoto Ninomiya
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Publication number: 20100243026Abstract: A solar cell module includes: a translucent front surface member; a rear surface member; solar cells disposed between the front surface member and the rear surface member and electrically connected to each other; and a translucent sealing resin filled between the front surface member and the rear surface member and fixing the solar cells to the front surface member and the rear surface member. The solar cell includes: a photoelectric conversion body having a semiconductor junction to form an electric field isolating carriers; a suppression layer provided between the front surface member and the photoelectric conversion body and configured to suppress recombination of minority carriers; and an inclined surface provided at the outer edge of the suppression layer and extending in a direction non-parallel to the normal line of the solar cell.Type: ApplicationFiled: March 24, 2010Publication date: September 30, 2010Applicant: Sanyo Electronic Co., LtdInventor: Masaki Shima
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Patent number: 7794881Abstract: An electrode for a lithium battery having a thin film composed of active material capable of lithium storage and release, e.g., a microcrystalline or amorphous silicon thin film, provided on a current collector, the electrode being characterized in that a constituent of the current collector is diffused into the thin film.Type: GrantFiled: October 20, 2000Date of Patent: September 14, 2010Assignee: Sanyo Electric Co., Ltd.Inventors: Masahisa Fujimoto, Shin Fujitani, Masaki Shima, Hiromasa Yagi, Hisaki Tarui, Hiroshi Kurokawa, Shigeki Matsuta, Yoichi Domoto, Yoshio Kato, Hiroshi Nakajima, Hiroaki Ikeda, Kenji Asaoka, Ryuji Ohshita