Abstract: A brushless motor includes a motor part and a gear part. The motor part includes: a rotating shaft, having a first gear; a rotor, having a bottom wall and a side wall, the bottom wall being fixed to the rotating shaft; magnets, fixed to the side wall and arranged side by side in a circumferential direction of the rotor; a stator, provided between the rotating shaft and the magnets in a radial direction of the rotor and wound with a coil; and a motor housing, rotatably supporting the rotating shaft, and accommodating the rotor and the stator. The gear part includes: a second gear, meshed with the first gear; an output shaft, having an output part, having a base end side thereof fixed to the second gear, and parallel to the rotating shaft; and a gear housing, rotatably supporting the output shaft, and accommodating the second gear.

Abstract: Provided are a wafer heating and holding mechanism for a rotary table, a wafer heating method for a rotary table, and a wafer rotating and holding device with which a wafer put on a rotary table can be heated while being rotated stably under a state in which an in-plane temperature distribution of the wafer is maintained. The wafer heating and holding mechanism for a rotary table of a wafer rotating and holding device comprises: a rotary shaft; a rotary table placed on an end of the rotary shaft and configured to hold a wafer on an upper surface of the rotary table; a drive motor configured to supply motive power to the rotary shaft; and a heater provided above the rotary table and below the wafer while avoiding contact with the wafer to heat the wafer.

Abstract: In a surface layer of a rear surface of the semiconductor substrate, an n+-type cathode region and a p-type cathode region are each selectively provided. The n+-type cathode region and the p-type cathode region constitute a cathode layer and are adjacent to each other along a direction parallel to the rear surface of the semiconductor substrate. The n+-type cathode region and the p-type cathode region are in contact with a cathode electrode. In an n?-type drift layer, plural n-type FS layers are provided at differing depths deeper from the rear surface of the semiconductor substrate than is the cathode layer. With such configuration, in a diode, a tradeoff relationship of forward voltage reduction and reverse recovery loss reduction may be improved and soft recovery may be realized.

Abstract: An imaging device of the disclosure includes an imaging lens; an imaging element that converts an optical image formed on an image forming surface by the imaging lens, into an electric signal; and a computing device that corrects distortion aberration of an image picked up by the imaging element. The imaging lens includes, in order from object side, a front-group lens system having positive refractive power, and a rear-group lens system having negative refractive power, a lens surface on a closest side to the image of the rear-group lens system being concave on an image side near an optical axis and convex on the image side around a periphery, and the following conditional expression is satisfied: 5(%)<ODMax<20(%)??(1) where ODMax is a maximum value of distortion aberration within an imaging region of the imaging lens.

Abstract: In a surface layer of a rear surface of the semiconductor substrate, an n+-type cathode region and a p-type cathode region are each selectively provided. The n+-type cathode region and the p-type cathode region constitute a cathode layer and are adjacent to each other along a direction parallel to the rear surface of the semiconductor substrate. The n+-type cathode region and the p-type cathode region are in contact with a cathode electrode. In an n?-type drift layer, plural n-type FS layers are provided at differing depths deeper from the rear surface of the semiconductor substrate than is the cathode layer. With such configuration, in a diode, a tradeoff relationship of forward voltage reduction and reverse recovery loss reduction may be improved and soft recovery may be realized.

Abstract: Provided are a wafer holding mechanism for a rotary table and a method and a wafer rotating and holding device, which enable change of a holding position of the wafer during spin processing while maintaining the posture of the wafer, enable reduction of marks of outer peripheral pins due to etching, and enable reduction of insufficient cleaning or uneven cleaning. The wafer holding mechanism for a rotary table comprises a rotary table configured to hold a wafer on an upper surface thereof, and a plurality of movable outer peripheral pins provided in the rotary table and configured to hold an outer periphery of the wafer. The plurality of movable outer peripheral pins comprise a plurality of first movable outer peripheral pins and a plurality of second movable outer peripheral pins configured to hold the wafer at positions different from positions at which the wafer is held by the first movable outer peripheral pins.

Abstract: On a front surface side of an n? semiconductor substrate, an emitter electrode and trench gates each including a p base layer, a trench, a gate oxide film and a gate electrode are provided in an IGBT region and a FWD region. Among p base layers each between adjacent trenches, p base layers having an n+ emitter region are the IGBT emitter region and the p base layers not having the n+ emitter region are the FWD anode region. A lateral width of an n+ cathode region is narrower than a lateral width of the FWD anode region. A difference of a lateral width of the FWD anode region and a lateral width of the n+ cathode region is 50 ?m or more. Thus, a semiconductor device may be provided that reduces the forward voltage drop while suppressing waveform oscillation during reverse recovery and having soft recover characteristics.

Abstract: An imaging unit of the disclosure includes an imaging lens including a first lens group and a second lens group that are disposed in order from object side toward image side, and an imaging device that converts an optical image formed by the imaging lens into an electric signal. The second lens group and the imaging device are rotationally moved integrally to allow the second lens group and the imaging device to be tilted with respect to an optical axis of the first lens group.

Abstract: Provided is a cable connecting mechanism including a slider and a slider housing member. The slider housing member has a lid member, a bottom surface member, a pair of side walls, a one-end-side hinge connecting the lid member and the bottom surface member, an another-end-side hinge connecting the member and the bottom surface member, a first engagement structure provided on an outer surface closer to one end of the slider housing member than the one-end-side hinge, a second engagement structure, a third engagement structure, a fourth engagement structure, a cable extension part, and a wall portion arranged to be sandwiched between the one-end-side hinge and the another-end-side hinge.

Abstract: Provided are a wafer holding mechanism for a rotary table and a method and a wafer rotating and holding device, which enable change of a holding position of the wafer during spin processing while maintaining the posture of the wafer, enable reduction of marks of outer peripheral pins due to etching, and enable reduction of insufficient cleaning or uneven cleaning. The wafer holding mechanism for a rotary table comprises a rotary table configured to hold a wafer on an upper surface thereof, and a plurality of movable outer peripheral pins provided in the rotary table and configured to hold an outer periphery of the wafer. The plurality of movable outer peripheral pins comprise a plurality of first movable outer peripheral pins and a plurality of second movable outer peripheral pins configured to hold the wafer at positions different from positions at which the wafer is held by the first movable outer peripheral pins.

Abstract: Provided are a wafer heating and holding mechanism for a rotary table, a wafer heating method for a rotary table, and a wafer rotating and holding device with which a wafer put on a rotary table can be heated while being rotated stably under a state in which an in-plane temperature distribution of the wafer is maintained. The wafer heating and holding mechanism for a rotary table of a wafer rotating and holding device comprises: a rotary shaft; a rotary table placed on an end of the rotary shaft and configured to hold a wafer on an upper surface of the rotary table; a drive motor configured to supply motive power to the rotary shaft; and heating means provided above the rotary table and below the wafer while avoiding contact with the wafer to heat the wafer.

Abstract: Provided is a thermoplastic resin composition a resin molded article of which has excellent mechanical strength. The thermoplastic resin composition comprising: a thermoplastic resin; relative to 100 parts by weight of the thermoplastic resin, 0.01 to 30 parts by weight of an additive having a Mohs hardness of 5.5 or larger; and 10 to 200 parts by weight of glass fiber, wherein the glass fiber comprises SiO2 and Al2O3 in a proportion of 60 to 70% by weight of SiO2 and 20 to 30% by weight of Al2O3.

Abstract: The present invention provides a method of repairing a plaster ceiling. The plaster ceiling to be repaired by the above described method includes: plates bridged across joists and spaced apart from each other; a ceiling base material finished with a masonry trowel over the lower surfaces of the plates; and a ceiling finishing material formed over the lower surface of the ceiling base material. The above described method includes the steps of: drilling an injection hole extending from the upper surface of the plate to the interface between the plate and the ceiling base material; injecting an acrylic resin composition containing: at least one monomer selected from an acrylic monomer or an methacrylic monomer; a thermosetting resin; and a curing agent; through the injection hole into the interface between the plate and the ceiling base material; and curing the acrylic resin composition so that the plate and the ceiling base material are adhered to each other.

Abstract: An image quality is improved although a medical stereomicroscope optical system and a medical observation apparatus are small and light. An objective optical system and a plurality of imaging optical systems are arranged in an order from an object side to an image side, and the imaging optical system has at least a single aspheric surface. Accordingly, a spherical aberration and a field curvature are improved, and the image quality is improved although the medical stereomicroscope optical system and a medical observation apparatus are small and light.

Abstract: In a surface layer of a rear surface of the semiconductor substrate, an n+-type cathode region and a p-type cathode region are each selectively provided. The n+-type cathode region and the p-type cathode region constitute a cathode layer and are adjacent to each other along a direction parallel to the rear surface of the semiconductor substrate. The n+-type cathode region and the p-type cathode region are in contact with a cathode electrode. In an n?-type drift layer, plural n-type FS layers are provided at differing depths deeper from the rear surface of the semiconductor substrate than is the cathode layer. With such configuration, in a diode, a tradeoff relationship of forward voltage reduction and reverse recovery loss reduction may be improved and soft recovery may be realized.

Abstract: An imaging lens of the present disclosure includes, in order from object side toward image plane side, a first lens having a meniscus shape, the meniscus shape having a shape that is positioned near an optical axis and includes a convex surface that faces the object side, a second lens including a convex surface that faces, near the optical axis, the object side, and having, near the optical axis, positive refractive power, a third lens having, near the optical axis, negative refractive power, a fourth lens, a fifth lens, a sixth lens having, near the optical axis, positive refractive power, and a seventh lens having, near the optical axis, negative refractive power, and including a lens surface, the lens surface being positioned on the image plane side, and having an aspherical shape that has an inflection point.

Abstract: Provided is a cable connecting mechanism including a slider and a slider housing member. The slider housing member has a lid member, a bottom surface member, a pair of side walls, a one-end-side hinge connecting the lid member and the bottom surface member, an another-end-side hinge connecting the member and the bottom surface member, a first engagement structure provided on an outer surface closer to one end of the slider housing member than the one-end-side hinge, a second engagement structure, a third engagement structure, a fourth engagement structure, a cable extension part, and a wall portion arranged to be sandwiched between the one-end-side hinge and the another-end-side hinge.

Abstract: An imaging lens according to the disclosure includes a first lens, a second lens, a third lens, a fourth lens, a fifth lens, and a sixth lens. The first lens includes a meniscus lens that has a convex surface facing object side and has positive refractive power near an optical axis. The second lens has a convex surface facing the object side and has negative refractive power near the optical axis. The third lens has positive refractive power near the optical axis. The fifth lens has positive refractive power near the optical axis. The sixth lens has negative refractive power near the optical axis and has an aspheric surface on the image plane side. The aspheric surface has an inflection point. The first lens, the second lens, the third lens, the fourth lens, the fifth lens, and the sixth lens are disposed in order from the object side toward the image plane side. The imaging lens satisfies the following conditional expressions. f/f5<1??(1) ?0.

Abstract: An imaging unit of the disclosure includes an imaging lens including a first lens group and a second lens group that are disposed in order from object side toward image side, and an imaging device that converts an optical image formed by the imaging lens into an electric signal. The second lens group and the imaging device are rotationally moved integrally to allow the second lens group and the imaging device to be tilted with respect to an optical axis of the first lens group.

Abstract: On a front surface side of an n? semiconductor substrate, an emitter electrode and trench gates each including a p base layer, a trench, a gate oxide film and a gate electrode are provided in an IGBT region and a FWD region. Among p base layers each between adjacent trenches, p base layers having an n+ emitter region are the IGBT emitter region and the p base layers not having the n+ emitter region are the FWD anode region. A lateral width of an n+ cathode region is narrower than a lateral width of the FWD anode region. A difference of a lateral width of the FWD anode region and a lateral width of the n+ cathode region is 50 ?m or more. Thus, a semiconductor device may be provided that reduces the forward voltage drop while suppressing waveform oscillation during reverse recovery and having soft recover characteristics.