Abstract: A flexible wiring board includes an insulating layer having a support surface extending in a first direction; a first sheet adhesive terminal positioned on the support surface; and a second sheet adhesive terminal positioned on the support surface. The shape of the first sheet adhesive terminal and the shape of the second sheet adhesive terminal are point-symmetric about a point on a straight fold line on which straight guide lines extending in the first direction lie.

Abstract: According to an embodiment, a non-volatile memory device includes first electrodes stacked on an underlying layer, a second electrode provided on the first electrodes, a semiconductor layer extending in a first direction from the underlying layer to the second electrode, and a memory film provided between each of the first electrodes and the semiconductor layer. The semiconductor layer includes a first portion adjacent to the first electrodes and a second portion adjacent to the second electrode. The second portion has a thickness thinner than a thickness of the first portion in a second direction perpendicular to the first direction.

Abstract: A light control unit includes a wiring member including a mount section and an extending section, and a light control sheet that includes a light control layer formed between first and second transparent electrodes. The first transparent electrode has a first wiring region which is exposed from the light control layer, the second transparent electrode has a second wiring region which is exposed from the light control layer, the mount section is in the first wiring region and extends in a first direction along the edge portion of the first transparent electrode, the extending section extends from the mount section toward an outside of the first transparent electrode, the mount section has a first width along a first perpendicular direction perpendicular to the first direction, and the extending section has a second width greater than the first width of the mount section.

Abstract: A detection device of the present invention is provided with: a housing; a circuit substrate disposed in the housing; a sensor which is electrically connected to the circuit substrate and detects information of an object to be measured; a connector terminal which is formed integrally with the circuit substrate and electrically connected to an external terminal; and a tubular connector which is formed integrally with the housing, surrounds a periphery of the connector terminal, and is fitted in the external connector. Through this configuration, the reduction in the number of components, the reduction in cost and weight, the simplification of structure, and other effects can be achieved.

Abstract: A method for producing a 2-(halogenated methyl)naphthalene represented by general formula (1): where X is a halogen atom. The method includes a halogenation process of reacting 2-methylnaphthalene with a halogenating agent under light irradiation, in an organic solvent selected from a halogenated hydrocarbon, an aliphatic ester and an aliphatic hydrocarbon.

Abstract: According to an embodiment, a non-volatile memory device includes a first conductive layer, electrodes, an interconnection layer and at least one semiconductor layer. The electrodes are arranged between the first conductive layer and the interconnection layer in a first direction perpendicular to the first conductive layer. The interconnection layer includes a first interconnection and a second interconnection. The semiconductor layer extends through the electrodes in the first direction, and is electrically connected to the first conductive layer and the first interconnection. The device further includes a memory film between each of the electrodes and the semiconductor layer, and a conductive body extending in the first direction. The conductive body electrically connects the first conductive layer and the second interconnection, and includes a first portion and a second portion connected to the second interconnection. The second portion has a width wider than the first portion.

Abstract: A semiconductor memory device includes a connecting member including a semiconductor material, a first electrode film, a first insulating film, a stacked body and three or more semiconductor pillars. The stacked body includes second electrode films and second insulating films that alternately stacked. The semiconductor pillars are arrayed along two or more directions, extend in a stacking direction, pierce through the stacked body and the first insulating film, and are connected to the connecting member. The device includes a third insulating film provided between the semiconductor pillars and the stacked body and between the connecting member and the first electrode film. A charge storage layer is provided at least between one of the second electrode films and the third insulating film.

Abstract: According to an embodiment, a non-volatile memory device includes a first conductive layer, electrodes, an interconnection layer and at least one semiconductor layer. The electrodes are arranged between the first conductive layer and the interconnection layer in a first direction perpendicular to the first conductive layer. The interconnection layer includes a first interconnection and a second interconnection. The semiconductor layer extends through the electrodes in the first direction, and is electrically connected to the first conductive layer and the first interconnection. The device further includes a memory film between each of the electrodes and the semiconductor layer, and a conductive body extending in the first direction. The conductive body electrically connects the first conductive layer and the second interconnection, and includes a first portion and a second portion connected to the second interconnection. The second portion has a width wider than the first portion.

Abstract: A semiconductor device includes a body including conductive layers stacked and spaced from each other in a first direction and first and second areas along a second direction intersecting the first direction, an insulating portion extending along the directions in the areas and dividing the conductive layers in a third direction intersecting the directions, first columnar portions extending along the first direction in the first area and including a semiconductor layer, memory cells being formed at intersections between the conductive and semiconductor layers, second columnar portions extending along the first direction in the second area and including an insulator, third columnar portions extending along the first direction in the second area and including a semiconductor layer, and contacts extending along the first direction in the second area and connected to a conductive layer. The second portions are arranged along the insulating portion on both sides thereof in the third direction.

Abstract: A semiconductor memory device includes a connecting member including a semiconductor material, a first electrode film, a first insulating film, a stacked body and three or more semiconductor pillars. The stacked body includes second electrode films and second insulating films that alternately stacked. The semiconductor pillars are arrayed along two or more directions, extend in a stacking direction, pierce through the stacked body and the first insulating film, and are connected to the connecting member. The device includes a third insulating film provided between the semiconductor pillars and the stacked body and between the connecting member and the first electrode film. A charge storage layer is provided at least between one of the second electrode films and the third insulating film.

Abstract: A light control unit includes a wiring member including a mount section and an extending section, and a light control sheet that includes a light control layer formed between first and second transparent electrodes. The first transparent electrode has a first wiring region which is exposed from the light control layer, the second transparent electrode has a second wiring region which is exposed from the light control layer, the mount section is in the first wiring region and extends in a first direction along the edge portion of the first transparent electrode, the extending section extends from the mount section toward an outside of the first transparent electrode, the mount section has a first width along a first perpendicular direction perpendicular to the first direction, and the extending section has a second width greater than the first width of the mount section.

Abstract: A running pattern creation device includes: a coordinate system that is formed of a positional coordinate axis and a vehicle velocity axis; a stopping avoidance zone position holding unit 1 configured to hold positional information on a stopping avoidance zone of a vehicle 8; a vehicle condition holding unit 2 configured to hold at least information on respective accelerations at an acceleration time, a deceleration time and a coasting time with respect to specification of the vehicle 8; a braking pattern creation unit 3 configured to create a braking pattern that is a pattern for stopping the vehicle 8 at a position other than the stopping avoidance zone using the positional information and information on acceleration at the deceleration time; a coasting pattern creation unit 4 configured to create a coasting pattern that is a pattern for stopping the vehicle 8 at a position other than the stopping avoidance zone using the positional information and the information on acceleration at the coasting time; an ob

Abstract: According to an embodiment, a non-volatile memory device includes a first conductive layer, electrodes, an interconnection layer and at least one semiconductor layer. The electrodes are arranged between the first conductive layer and the interconnection layer in a first direction perpendicular to the first conductive layer. The interconnection layer includes a first interconnection and a second interconnection. The semiconductor layer extends through the electrodes in the first direction, and is electrically connected to the first conductive layer and the first interconnection. The device further includes a memory film between each of the electrodes and the semiconductor layer, and a conductive body extending in the first direction. The conductive body electrically connects the first conductive layer and the second interconnection, and includes a first portion and a second portion connected to the second interconnection. The second portion has a width wider than the first portion.

Abstract: A packet flow monitoring device, a packet data extraction device, an extraction data aggregation device, and a program for efficiently and highly accurately monitoring a packet flow in a video or audio communication system constructed by an Ethernet (registered trademark) frame or IP packet network. This packet flow monitoring device includes: a packet data extraction device that replicates all passing packets that pass through one or a plurality of specific network switches on the network and extracts and aggregates some predetermined pieces of information in the replicated passing packets to form and output an extraction data report packet; and an extraction data aggregation device that receives the extraction data report packet, analyzes the extraction data report packet so as to aggregate the predetermined pieces of information in the replicated passing packets included in the extraction data report packet for each packet flow, and records the aggregated information as aggregation data.

Abstract: According to an embodiment, a non-volatile memory device includes a first conductive layer, electrodes, an interconnection layer and at least one semiconductor layer. The electrodes are arranged between the first conductive layer and the interconnection layer in a first direction perpendicular to the first conductive layer. The interconnection layer includes a first interconnection and a second interconnection. The semiconductor layer extends through the electrodes in the first direction, and is electrically connected to the first conductive layer and the first interconnection. The device further includes a memory film between each of the electrodes and the semiconductor layer, and a conductive body extending in the first direction. The conductive body electrically connects the first conductive layer and the second interconnection, and includes a first portion and a second portion connected to the second interconnection. The second portion has a width wider than the first portion.

Abstract: A semiconductor memory device includes a connecting member including a semiconductor material, a first electrode film, a first insulating film, a stacked body and three or more semiconductor pillars. The stacked body includes second electrode films and second insulating films that alternately stacked. The semiconductor pillars are arrayed along two or more directions, extend in a stacking direction, pierce through the stacked body and the first insulating film, and are connected to the connecting member. The device includes a third insulating film provided between the semiconductor pillars and the stacked body and between the connecting member and the first electrode film. A charge storage layer is provided at least between one of the second electrode films and the third insulating film.

Abstract: A semiconductor memory device includes a connecting member including a semiconductor material, a first electrode film, a first insulating film, a stacked body and three or more semiconductor pillars. The stacked body includes second electrode films and second insulating films that alternately stacked. The semiconductor pillars are arrayed along two or more directions, extend in a stacking direction, pierce through the stacked body and the first insulating film, and are connected to the connecting member. The device includes a third insulating film provided between the semiconductor pillars and the stacked body and between the connecting member and the first electrode film. A charge storage layer is provided at least between one of the second electrode films and the third insulating film.

Abstract: A packet flow monitoring device, a packet data extraction device, an extraction data aggregation device, and a program for efficiently and highly accurately monitoring a packet flow in a video or audio communication system constructed by an Ethernet (registered trademark) frame or IP packet network. This packet flow monitoring device includes: a packet data extraction device that replicates all passing packets that pass through one or a plurality of specific network switches on the network and extracts and aggregates some predetermined pieces of information in the replicated passing packets to form and output an extraction data report packet; and an extraction data aggregation device that receives the extraction data report packet, analyzes the extraction data report packet so as to aggregate the predetermined pieces of information in the replicated passing packets included in the extraction data report packet for each packet flow, and records the aggregated information as aggregation data.

Abstract: A semiconductor memory device according to the present embodiment includes a substrate including a silicon single crystal, a control circuit including a transistor having a channel direction different from [010] direction and [100] direction of the substrate, a circuit wiring layer electrically connected to the control circuit, a first connecting terminal connected to the circuit wiring layer, a plurality of memory cells arranged three-dimensionally, a memory wiring layer electrically connected to the memory cells; and a second connecting terminal connected to the memory wiring layer and the first connecting terminal.

Abstract: A semiconductor memory device includes a connecting member including a semiconductor material, a first electrode film, a first insulating film, a stacked body and three or more semiconductor pillars. The stacked body includes second electrode films and second insulating films that alternately stacked. The semiconductor pillars are arrayed along two or more directions, extend in a stacking direction, pierce through the stacked body and the first insulating film, and are connected to the connecting member. The device includes a third insulating film provided between the semiconductor pillars and the stacked body and between the connecting member and the first electrode film. A charge storage layer is provided at least between one of the second electrode films and the third insulating film.