Abstract: A pressure gauge includes an introduction member, a connection member, a bourdon tube, a pointer, a dial plate, a detector, and an information communication unit. A battery installed in the information communication unit is disposed between a circuit board and a lid. The information communication unit is inserted in a through hole of the dial plate to be disposed astride between a front surface and a rear surface of the dial plate and the lid is disposed on a side of the information communication unit close to the front surface of the dial plate.

Abstract: A surface emitting laser includes a substrate, a mesa of semiconductor layers including a lower reflector layer, an active layer, an upper reflector layer, and an upper contact layer that are successively laminated on the substrate, and an electrode provided on the upper contact layer. The upper contact layer includes GaAs. The electrode includes an alloy layer including Pt, in contact with the upper contact layer.

Abstract: A pressure gauge includes an introduction member, a connection member, a bourdon tube, a pointer, a dial plate, a detector, and an information communication unit. A battery installed in the information communication unit is disposed between a circuit board and a lid. The information communication unit is inserted in a through hole of the dial plate to be disposed astride between a front surface and a rear surface of the dial plate and the lid is disposed on a side of the information communication unit close to the front surface of the dial plate.

Abstract: A surface emitting laser includes a substrate, a mesa of semiconductor layers including a lower reflector layer, an active layer, an upper reflector layer, and an upper contact layer that are successively laminated on the substrate, and an electrode provided on the upper contact layer. The upper contact layer includes GaAs. The electrode includes an alloy layer including Pt, in contact with the upper contact layer.

Abstract: A surface emitting semiconductor laser includes a post disposed on a substrate, the post including an active layer and a distributed Bragg reflector; a first insulating layer disposed on side and top surfaces of the post and on the substrate, the first insulating layer having an opening on the top surface of the post; an electrode disposed in the opening of the first insulating layer; an electric conductor including a pad electrode on the first insulating layer, the electric conductor extending on the first insulating layer to the electrode; and a second insulating layer disposed on the first insulating layer, the electrode, and the electric conductor so as to cover the electrode in the opening of the first insulating layer, the second insulating layer having an opening on the pad electrode, the opening of the second insulating layer having an edge on a top surface of the pad electrode.

Abstract: A surface emitting semiconductor laser includes a post disposed on a substrate, the post including an active layer and a distributed Bragg reflector; a first insulating layer disposed on side and top surfaces of the post and on the substrate, the first insulating layer having an opening on the top surface of the post; an electrode disposed in the opening of the first insulating layer; an electric conductor including a pad electrode on the first insulating layer, the electric conductor extending on the first insulating layer to the electrode; and a second insulating layer disposed on the first insulating layer, the electrode, and the electric conductor so as to cover the electrode in the opening of the first insulating layer, the second insulating layer having an opening on the pad electrode, the opening of the second insulating layer having an edge on a top surface of the pad electrode.

Abstract: A method fix forming a diffraction grating includes the steps of preparing a mold including pattern portions each having a pattern corresponding to a pattern for the diffraction grating; forming a first semiconductor layer on a substrate; forming a resin layer on the first semiconductor layer; pressing the pattern portions of the mold against the resin layer; forming the pattern for the diffraction grating in the resin layer by curing the resin layer; and forming the diffraction grating in the first semiconductor layer by etching the first semiconductor layer using the patterned resin layer. The mold includes a first base and a plurality of second bases disposed on the first base. The first base is made of a flexible material. Each second base is made of a rigid material. The second bases each include one pattern portion and are spaced apart from each other with a predetermined distance.

Abstract: A semiconductor optical integrated device includes a substrate having a main surface with a first and second regions arranged along a waveguiding direction; a gain region including a first cladding layer, an active layer, and a second cladding layer arranged on the first region of the main surface; and a wavelength control region including a third cladding layer, an optical waveguide layer, and a fourth cladding layer arranged on the second region of the main surface and including a heater arranged along the optical waveguide layer. The substrate includes a through hole extending from a back surface of the substrate in the thickness direction and reaching the first region. A metal member is arranged in the through hole. The metal member extends from the back surface of the substrate in the thickness direction and is in contact with the first cladding layer.

Abstract: A method of forming a sampled grating includes the steps of preparing a substrate; preparing a nano-imprinting mold including a pattern surface on which projections and recesses are periodically formed; preparing a mask including a light obstructing portion and a light transmitting portion that are alternately provided; forming a photoresist layer and a resin portion in that order on the substrate; forming a patterned resin portion having projections and recesses by pressing the pattern surface of the mold into contact with the resin portion and hardening the resin portion while maintaining the contact; exposing a portion of the photoresist layer by irradiating the photoresist layer with exposing light through the mask and the patterned resin portion; forming a patterned photoresist layer by developing the photoresist layer; and etching the substrate using the patterned photoresist layer.

Abstract: A nano-imprint mold includes a mold base; mold body having a first surface and a second surface opposite the first surface; and an elastic body disposed between a surface of the mold base and the first surface of the mold body, the elastic body being composed of resin. The second surface of the mold body is provided with a nano-imprint pattern. In addition, the elastic body has a bulk modulus lower than a bulk modulus of the mold body.

Abstract: A process using the nanoimprint technique to form the diffraction grating for the DFB-LD is disclosed. The process includes (a) coating a resist for the EB exposure on a dummy substrate, (b) irradiating the resist as varying the acceleration voltage, (c) forming a resist pattern by developing the irradiated resist, (d) coating the SOG film on the patterned resist, (e) attaching the silica substrate on the cured SOG film, and (f) removing the dummy substrate with the resist from the SOG film and the silica substrate. Using the mold thus formed, the diffraction grating for the DFB-LD is formed by the nanoimprint technique.

Abstract: A method for forming a diffraction grating includes the steps of preparing a mold including a pattern portion having a pattern for forming a diffraction grating; forming a first semiconductor layer on a substrate; forming a resin layer on the first semiconductor layer; pressing the pattern portion of the mold against the resin layer; forming the pattern for the diffraction grating in the resin layer by curing the resin layer; and forming the diffraction grating in the first semiconductor layer by etching the first semiconductor layer using the patterned resin layer. The mold includes a first base and a plurality of second bases disposed on the first base. The first base is made of a flexible material. The second base is made of a rigid material. The plurality of second bases each include the pattern portion and are spaced apart from each other with a predetermined distance.

Abstract: A method for producing a semiconductor optical integrated device includes the steps of forming a substrate product including first and second stacked semiconductor layer portions; forming a first mask on the first and second stacked semiconductor layer portions, the first mask including a stripe-shaped first pattern region and a second pattern region, the second pattern region including a first end edge; forming a stripe-shaped mesa structure; removing the second pattern region of the first mask; forming a second mask on the second stacked semiconductor layer portion; and selectively growing a buried semiconductor layer with the first and second masks. The second mask includes a second end edge separated from the first end edge of the first mask, the second end edge being located on the side of the second stacked semiconductor layer portion in the predetermined direction with respect to the first end edge of the first mask.

Abstract: A nano-imprint mold includes a mold body having a first surface provided with a pattern having projections and recesses, a second surface opposite the first surface and a side surface between the first surface and the second surface; and a mold base having a surface for fixing the mold body thereto. In addition, the second surface of the mold body is fixed to a part of the surface of the mold base, the second surface of the mold body being disposed away from at least a part of an edge of the surface of the mold base. Furthermore, the mold body has a shape such that a width thereof in a direction orthogonal to a direction extending from the first surface toward the second surface decreases from the first surface toward the second surface.

Abstract: A method for manufacturing a semiconductor laser includes the steps of preparing a mold with a pattern surface having recesses, forming a stacked semiconductor layer including a grating layer, forming a resin part on the grating layer, forming a resin pattern portion on the resin part, forming a diffraction grating by etching the grating layer using the resin part as a mask, and forming a mesa-structure on the stacked semiconductor layer. Each of the recesses includes two end portions and a middle portion between the two end portions. A depth of at least one of the two end portions from the pattern surface is greater than that of the middle portion. The step of forming the mesa-structure includes the step of etching the stacked semiconductor layer so as to remove end portions of the diffraction grating in a direction orthogonal to a periodic direction thereof.

Abstract: A method of making a semiconductor optical integrated device includes the steps of forming, on a substrate, a plurality of semiconductor integrated devices including a first optical semiconductor element having a first bonding pad and a second optical semiconductor element; forming a plurality of bar-shaped semiconductor optical integrated device arrays by cutting the substrate, each of the semiconductor optical integrated device arrays including two or more semiconductor optical integrated devices; alternately arranging the plurality of semiconductor optical integrated device arrays and a plurality of spacers in a thickness direction of the substrate so as to be fixed in place; and forming a coating film on a facet of the semiconductor optical integrated device array. Furthermore, the spacer has a movable portion facing the first bonding pad, the movable portion protruding toward the first bonding pad and being displaceable in a protruding direction.

Abstract: A semiconductor optical integrated device includes a substrate having a main surface with a first and second regions arranged along a waveguiding direction; a gain region including a first cladding layer, an active layer, and a second cladding layer arranged on the first region of the main surface; and a wavelength control region including a third cladding layer, an optical waveguide layer, and a fourth cladding layer arranged on the second region of the main surface and including a heater arranged along the optical waveguide layer. The substrate includes a through hole extending from a back surface of the substrate in the thickness direction and reaching the first region. A metal member is arranged in the through hole. The metal member extends from the back surface of the substrate in the thickness direction and is in contact with the first cladding layer.

Abstract: A method of forming a sampled grating includes the steps of preparing a substrate; preparing a nano-imprinting mold including a pattern surface on which projections and recesses are periodically formed; preparing a mask including a light obstructing portion and a light transmitting portion that are alternately provided; forming a photoresist layer and a resin portion in that order on the substrate; forming a patterned resin portion having projections and recesses by pressing the pattern surface of the mold into contact with the resin portion and hardening the resin portion while maintaining the contact; exposing a portion of the photoresist layer by irradiating the photoresist layer with exposing light through the mask and the patterned resin portion; forming a patterned photoresist layer by developing the photoresist layer; and etching the substrate using the patterned photoresist layer.

Abstract: A method for producing a semiconductor optical integrated device includes the steps of forming a substrate product including first and second stacked semiconductor layer portions; forming a first mask on the first and second stacked semiconductor layer portions, the first mask including a stripe-shaped first pattern region and a second pattern region, the second pattern region including a first end edge; forming a stripe-shaped mesa structure; removing the second pattern region of the first mask; forming a second mask on the second stacked semiconductor layer portion; and selectively growing a buried semiconductor layer with the first and second masks. The second mask includes a second end edge separated from the first end edge of the first mask, the second end edge being located on the side of the second stacked semiconductor layer portion in the predetermined direction with respect to the first end edge of the first mask.

Abstract: A method for manufacturing a semiconductor laser includes the steps of preparing a mold with a pattern surface having recesses, forming a stacked semiconductor layer including a grating layer, forming a resin part on the grating layer, forming a resin pattern portion on the resin part, forming a diffraction grating by etching the grating layer using the resin part as a mask, and forming a mesa-structure on the stacked semiconductor layer. Each of the recesses includes two end portions and a middle portion between the two end portions. A depth of at least one of the two end portions from the pattern surface is greater than that of the middle portion. The step of forming the mesa-structure includes the step of etching the stacked semiconductor layer so as to remove end portions of the diffraction grating in a direction orthogonal to a periodic direction thereof.