Abstract: A coating and developing system includes a resist film forming unit block and antireflection film forming unit blocks stacked in layers to form a resist film and an antireflection film underlying the resist film and an antireflection film overlying the resist film in a small space. The coating and developing system can cope with either of a case where antireflection films are formed and where any antireflection film is not formed. Film forming unit blocks: TCT layer B3, a COT layer B4 and a BCT layer B5, and developing unit blocks: DEV layers B1 and B2, are stacked up in layers in a processing block S2. The TCT layer B3, the COT layer B4 and the BCT layer B5 are used selectively where antireflection films are formed and any antireflection film is not formed. The coating and developing system is controlled by a carrying program and software.

Abstract: A heating apparatus cooling a substrate heated by a hot plate at a cooling position adjacent to the hot plate, capable of achieving a smaller height and reducing an operation time in the apparatus, in which contamination of the substrate by particles or the like is less likely, and the like, are provided. The heating apparatus includes a hot plate for heating a wafer representing a substrate from below, in a heating chamber having a wafer load/unload port. In addition, a wire for transferring the wafer between a cooling position of the substrate adjacent to the load/unload port of the heating chamber (position above a cooling plate) and a position above the hot plate is provided and extends. The wafer is mounted on a gap forming member provided on the wire, and thereafter loaded into the heating chamber.

Abstract: A coating and developing system includes an auxiliary block, a resist film forming unit block and antireflection film forming unit blocks stacked up in layers to form a resist film and an antireflection film underlying the resist film and an antireflection film overlying the resist film in a small space. The coating and developing system can cope with either a case where antireflection films are formed or a case where no antireflection film is formed. Film forming unit blocks, namely, a TCT layer, a COT layer and a BCT layer, and developing unit blocks, namely, DEV layers, are stacked up in layers in a processing block S2. The TCT layer, the COT layer and the BCT layer are used selectively in the case where antireflection films are formed and the case where any antireflection film is not formed. The coating and developing system is controlled by a carrying program.

Abstract: A heating device provided with a cooling plate and a heating plate is formed in a low height, and floats a substrate above the cooling plate and the heating plate and moves the substrate horizontally between the cooling plate and the heating plate by the pressure of a gas. A heating device 2 includes a cooling plate 3 provided with flotation gas spouting ports 3a, and a heating plate provided with flotation gas spouting ports. The flotation gas spouting ports 3a and 3b are arranged along a wafer moving passage and are formed so as to spout the gas obliquely upward toward a first end of the wafer moving passage on the side of the cooling plate. A pushing member 51 is brought into contact with a back part of a wafer W with respect to a direction in which the wafer W is moved to move the wafer W in a direction toward the heating plate 6 opposite a direction in which the flotation gas is spouted.

Abstract: A coating and developing system includes a resist film forming unit block and antireflection film forming unit blocks stacked up in layers to form a resist film and an antireflection film underlying the resist film and an antireflection film overlying the resist film in a small space. The coating and developing system is capable of coping with either of a case where antireflection films are formed and a case where any antireflection film is not formed and needs simple software. Film forming unit blocks, namely, a TCT layer B3, a COT layer B4 and a BCT layer B5, and developing unit blocks, namely, DEV layers B1 and B2, are stacked up in layers in a processing block S2. The TCT layer B3, the COT layer B4 and the BCT layer B5 are used selectively in the case where antireflection films are formed and the case where any antireflection film is not formed. The coating and developing system is controlled by a simple carrying program and simple software.

Abstract: Provided is a coating and developing apparatus composed of an assembly of plural unit blocks. A first unit-block stack and a second unit-block stack are arranged at different positions with respect to front-and-rear direction. Unit blocks for development, each of which comprises plural processing units including a developing unit that performs developing process after exposure and a transfer device that transfers a substrate among the processing units, are arranged at the lowermost level. Unit blocks for application, or coating, each of which comprises plural processing units including a coating unit that performs application process before exposure and a transfer device that transfers a substrate among the processing units, are arranged above the unit blocks for development. Unit blocks for application are arranged in both the first and second unit-block stacks.

Abstract: A heating apparatus 2 comprises a housing 20; a flat heating chamber 4 which is provided in the housing 2 and adapted to heat a wafer W used as a substrate, with one side of the heating chamber 4 opening for carrying in and carrying out the wafer; and a heating plates 44, 45 provided in the heating chamber 4 such that the wafer W can be heated from both above and below. A cooling plate 3 is provided in the housing 20 located in the vicinity of the opening of the heating chamber 4, for cooling the wafer W after being heated by the heating plates 44, 45. Additionally, a carrying means is provided in the housing 20 for carrying the wafer W between an upper position of the cooling plate 3 and the interior of the heating chamber 4 such that a heat treatment for the wafer W can be performed with the wafer W being held in the heating chamber 4.

Abstract: In the present invention, a substrate transfer unit into/from which a substrate is transferred from/to the outside of a treatment container and a developing treatment unit in which development of the substrate is performed are arranged side by side in the treatment container, and a carrier mechanism is provided which carries the substrate while grasping an outside surface of the substrate from both sides, between the substrate transfer unit and the developing treatment unit. A developing solution supply nozzle for supplying a developing solution onto the substrate and a gas blow nozzle for blowing a gas to the substrate, are provided between the substrate transfer unit and the developing treatment unit and above a carriage path along which the substrate is carried, and a cleaning solution supply nozzle is provided in the developing treatment unit for supplying a cleaning solution onto the substrate.

Abstract: A coating/developing device includes a processing block having a plurality of coating unit blocks stacked and a developing unit block stacked on the coating unit blocks. Each of the unit blocks is provided with a liquid processing unit for coating a liquid chemical on a substrate, a heating unit for heating the substrate, a cooling unit for cooling the substrate and a transfer unit for transferring the substrate between the units. The liquid processing unit is provided with a coating unit for coating a resist liquid on the substrate, a first bottom antireflection coating (BARC) forming unit for coating a liquid chemical for a BARC on the substrate before the resist liquid is coated thereon, and a second BARC forming unit for coating a liquid chemical for the BARC on the substrate after the resist liquid is coated thereon.

Abstract: A semiconductor manufacturing apparatus includes a transfer mechanism including a moving part for holding a substrate to be processed and moving along a longitudinal transferring passage and a plurality of processing units for performing respective processes on the substrate. The processing units are disposed along the transferring passage and the substrate is transferred between the processing units and the transfer mechanism. An exhaust chamber is provided under the processing units, the exhaust chamber having a gas exhaust opening at the side of the transferring passage, the exhaust chamber. Further, a suction exhaust line is connected to the exhaust chamber, and a guide member is provided inside the exhaust chamber or at a position facing the opening, wherein the guide member extends along the transferring passage.

Abstract: A coating film forming apparatus for forming a film by applying a coating solution to a substrate, which is provided with a cassette section, coating unit, developing unit, pre-treatment/post-treatment units and a main arm for transferring the substrate between the respective units. In the coating unit, provided is a coating section in which a resist is applied on the substrate in a manner of single stroke by intermittently moving the substrate in a Y-direction and by moving a nozzle in an X-direction, and provided is a reduced-pressure drying section for drying under reduced pressure the substrate after being applied, and further provided is equipment for removing the coating film adhered to a periphery of the substrate. Additionally, when the reduced-pressure drying section is arranged outside the coating unit, the main arm is covered with a cover so that the inside thereof is under a solvent atmosphere.

Abstract: A coating and developing apparatus comprises a process block which forms a resist film on a wafer, then transfers the wafer to an exposure apparatus, and performs a developing process on the wafer after exposure, and an interface transfer mechanism provided between the process block and the exposure apparatus. The process block includes unit blocks for coating-film formation and unit blocks for development laid out in a stacked manner. When an abnormality occurs in the interface transfer mechanism, an ordinary process in the unit block for coating-film formation is performed on those substrates which are present in that unit block for coating-film formation, after which processed wafers are retreated to a retaining unit and transfer of any wafer into the unit block for coating-film formation is inhibited.

Abstract: A coating and developing system includes a resist film forming unit block and antireflection film forming unit blocks stacked up in layers to form a resist film and an antireflection film underlying the resist film and an antireflection film overlying the resist film in a small space. The coating and developing system is capable of coping with either of a case where antireflection films are formed and a case where any antireflection film is not formed and needs simple software. Film forming unit blocks, namely, a TCT layer B3, a COT layer B4 and a BCT layer B5, and developing unit blocks, namely, DEV layers B1 and B2, are stacked up in layers in a processing block S2. The TCT layer B3, the COT layer B4 and the BCT layer B5 are used selectively in the case where antireflection films are formed and the case where any antireflection film is not formed. The coating and developing system is controlled by a simple carrying program and simple software.

Abstract: A coating and developing system includes a resist film forming unit block and antireflection film forming unit blocks stacked up in layers to form a resist film and an antireflection film underlying the resist film and an antireflection film overlying the resist film in a small space. The coating and developing system is capable of coping with either of a case where antireflection films are formed and a case where any antireflection film is not formed and needs simple software. Film forming unit blocks, namely, a TCT layer B3, a COT layer B4 and a BCT layer B5, and developing unit blocks, namely, DEV layers B1 and B2, are stacked up in layers in a processing block S2. The TCT layer B3, the COT layer B4 and the BCT layer B5 are used selectively in the case where antireflection films are formed and the case where any antireflection film is not formed. The coating and developing system is controlled by a simple carrying program and simple software.

Abstract: A coating and developing system includes a resist film forming unit block and antireflection film forming unit blocks stacked up in layers to form a resist film and an antireflection film underlying the resist film and an antireflection film overlying the resist film in a small space. The coating and developing system is capable of coping with either of a case where antireflection films are formed and a case where any antireflection film is not formed and needs simple software. Film forming unit blocks, namely, a TCT layer B3, a COT layer B4 and a BCT layer B5, and developing unit blocks, namely, DEV layers B1 and B2, are stacked up in layers in a processing block S2. The TCT layer B3, the COT layer B4 and the BCT layer B5 are used selectively in the case where antireflection films are formed and the case where any antireflection film is not formed. The coating and developing system is controlled by a simple carrying program and simple software.

Abstract: A coating and developing system includes a resist film forming unit block and antireflection film forming unit blocks stacked up in layers to form a resist film and an antireflection film underlying the resist film and an antireflection film overlying the resist film in a small space. The coating and developing system is capable of coping with either of a case where antireflection films are formed and a case where any antireflection film is not formed and needs simple software. Film forming unit blocks, namely, a TCT layer B3, a COT layer B4 and a BCT layer B5, and developing unit blocks, namely, DEV layers B1 and B2, are stacked up in layers in a processing block S2. The TCT layer B3, the COT layer B4 and the BCT layer B5 are used selectively in the case where antireflection films are formed and the case where any antireflection film is not formed. The coating and developing system is controlled by a simple carrying program and simple software.

Abstract: A substrate which has been subjected to heat processing in any of hot plate units is transferred to a normal cooling unit by a transfer device and subjected to cooling processing to some extent, and then transferred to a high accuracy cooling unit and subjected to cooling processing with high accuracy, and thereafter transferred to any of coating units or a developing units. Thereby, the substrate can be subjected to the cooling processing with high accuracy and thereafter to coating processing with no increase in apparatus cost and with no decrease in throughput.

Abstract: A coating film forming apparatus for forming a film by applying a coating solution to a substrate, which is provided with a cassette section, coating unit, developing unit, pre-treatment/post-treatment units and a main arm for transferring the substrate between the respective units. In the coating unit, provided is a coating section in which a resist is applied on the substrate in a manner of single stroke by intermittently moving the substrate in a Y-direction and by moving a nozzle in an X-direction, and provided is a reduced-pressure drying section for drying under reduced pressure the substrate after being applied, and further provided is equipment for removing the coating film adhered to a periphery of the substrate. Additionally, when the reduced-pressure drying section is arranged outside the coating unit, the main arm is covered with a cover so that the inside thereof is under a solvent atmosphere.

Abstract: A coating film forming apparatus for forming a film by applying a coating solution to a substrate, which is provided with a cassette section, coating unit, developing unit, pre-treatment/post-treatment units and a main arm for transferring the substrate between the respective units. In the coating unit, provided is a coating section in which a resist is applied on the substrate in a manner of single stroke by intermittently moving the substrate in a Y-direction and by moving a nozzle in an X-direction, and provided is a reduced-pressure drying section for drying under reduced pressure the substrate after being applied, and further provided is equipment for removing the coating film adhered to a periphery of the substrate. Additionally, when the reduced-pressure drying section is arranged outside the coating unit, the main arm is covered with a cover so that the inside thereof is under a solvent atmosphere.

Abstract: The present invention is a film forming unit for discharging a coating solution from a coating solution discharge nozzle toward a substrate to form a layer on a surface of the substrate, which has a supply flow path for supplying a cleaning fluid to a discharge flow path continuing to a discharging port of the coating solution discharge nozzle. When the cleaning fluid is positively supplied directly to the discharge flow path of the coating solution discharge nozzle, the supply pressure of the cleaning fluid as well as the capability of cleaning is added. Therefore, further effective cleaning is attained in compare with the conventional case where a coating solution discharge nozzle is simply dipped into a cleaning fluid. In consequence, even when the discharging port of the nozzle is minute, it is possible to perfectly remove the contamination. This allows the discharge pressure to remain constant so as to form a uniform coating layer on the substrate.