Abstract: A three-way valve includes an inflow port, a body having therein a valve chamber introducing fluid from an inflow passage of the inflow port; a first outflow port having an outflow passage extending at an acute angle to a reference direction in which the inflow passage extends; a second outflow port having an outflow passage extending from the valve chamber at an acute angle to the reference direction; and a valve element disposed inside the valve chamber and movable to adjust flow rates of the fluid in the first outflow port and the second outflow port. At least one of the first outflow port and the second outflow port includes a bent portion connecting the outflow passage and a downstream passage such that the downstream passage becomes closer to the reference direction than an extending direction of the outflow passage to the reference direction.

Abstract: A three-way valve includes an inflow port, a body having therein a valve chamber introducing fluid from an inflow passage of the inflow port; a first outflow port having an outflow passage extending at an acute angle to a reference direction in which the inflow passage extends; a second outflow port having an outflow passage extending from the valve chamber at an acute angle to the reference direction; and a valve element disposed inside the valve chamber and movable to adjust flow rates of the fluid in the first outflow port and the second outflow port. At least one of the first outflow port and the second outflow port includes a bent portion connecting the outflow passage and a downstream passage such that the downstream passage becomes closer to the reference direction than an extending direction of the outflow passage to the reference direction.

Abstract: A main evaporator cools a driver's compartment of a vehicle while a cooling storage evaporator cools cooling storage packs that are used in cooling a sleeping compartment. Refrigerant is supplied to the main evaporator at the actuation of a first solenoid valve while refrigerant is supplied to the cooling storage evaporator at the actuation of a second solenoid valve. If a first switch is being actuated after the completion of the cooling storage operation of the cooling storage evaporator on the cooling storage packs and the temperature of the cooling storage packs is no more than a preset temperature, for example, -5.degree. C., FIR control is performed for alternately actuating the first solenoid valve and the second solenoid valve based on a predetermined time ratio (for example, 10 minutes 15 seconds).

Abstract: A heat regenerating type cooling apparatus includes a heat regenerating evaporator encased in a case and provided with a tube for a cooling medium and a heat regenerating pack arranged to be in close contact with the outer surface of the tube of the heat regenerating evaporator. The heat regenerating evaporator conducts a refrigeration cycle while a vehicle is running and cools the heat regenerating pack so as to cause a heat regenerating material within the pack to freeze When the vehicle is parked, a blower is operated to cause a current of air that is cooled by the heat regenerating pack due to heat exchange between the current of air and the frozen heat regenerating material in the heat regenerating pack. The cold air is blown out into an objective cooling area, such as a sleeping area of the vehicle, from a blowing port so that the objective cooling area is air-conditioned, and the upper half of the body of a sleeping person in the area is effectively exposed to air-conditioned air.

Abstract: A method of manufacturing a MOS device wherein a semiconductor substrate is selectively etched to form a groove in a field region and an element formation region surrounded by the groove such that an angle .theta. is formed between a wall of the groove and a first imaginary extension of a top surface of the element formation region, the angle .theta. satisfying the relation, 70.degree..ltoreq..theta..ltoreq.90.degree.. Then, a field insulating film is deposited in the groove, and a MOS transistor is formed in the element formation region. The element formation region has source, drain and channel regions of a field effect transistor therein and a gate electrode formed on a gate insulating film on the channel region. The gate electrode extends onto the surface portion of the field insulating film.

Abstract: An MOS semiconductor device, wherein a buried region of silicon oxide or silicon nitride extends partly over the bottom plane of the channel region of an MOS transistor.