Abstract: Disclosed is a substrate processing system capable of performing an etching processing collectively on a plurality of substrates accommodated in a processing container. The system includes: a first acquisition unit which acquires, as information, an amount of a film forming material formed on one of the substrates; a second acquisition unit which acquires, as information, the number of the substrates; a first calculating unit which calculates a total amount of the film forming material formed on the substrates based on the amount of the film forming material and the number of the substrates; and a second calculating unit which calculates an etching condition required to etch and remove the entire film forming material based on the total amount of the film forming materials and a relationship between a predetermined amount of the film forming material and an etching condition.

Abstract: A film forming apparatus includes: a processing chamber receiving a substrate and performing a film forming process for forming a predetermined film; a gas supply means supplying inert gas; an exhaust means exhausting an inside of the processing chamber to adjust a pressure in the processing chamber; an impurity concentration detecting means detecting impurity concentration in the processing chamber; and a controller performing a purge process which includes supplying the inert gas into the processing chamber without exhausting the inside of the processing chamber and exhausting the inside of the processing chamber without supplying the inert gas into the processing chamber when the impurity concentration detected by the impurity concentration detecting means is equal to or more than a predetermined value, and perform the film forming process with respect to the substrate when the impurity concentration detected by the impurity concentration detecting means is less than the predetermined value.

Abstract: A substrate holder holds a stack of substrates to be plasma-processed, and includes a ring-shaped part to be placed between adjacent substrates each of which includes a process surface to be plasma-processed and a non-process surface opposite from the process surface. The ring-shaped part includes a facing surface that faces the process surface of one of the adjacent substrates, and a protrusion formed along the outer periphery of the facing surface.

Abstract: The process for producing a semiconductor device of the invention is a process for producing a semiconductor device, comprising: a temporarily bonding step of bonding a semiconductor element temporarily on an adherend through an adhesive sheet, a semi-curing step of heating the adhesive sheet under predetermined conditions, thereby turning the sheet into a semi-cured state that the shearing adhering strength of the sheet to the adherend is 0.5 MPa or more, and a wire bonding step of causing the semiconductor element to undergo wire bonding in the state that the adhesive sheet is semi-cured.

Abstract: The process for producing a semiconductor device of the invention is a process for producing a semiconductor device, comprising: a temporarily bonding step of bonding a semiconductor element temporarily on an adherend through an adhesive sheet, a semi-curing step of heating the adhesive sheet under predetermined conditions, thereby turning the sheet into a semi-cured state that the shearing adhering strength of the sheet to the adherend is 0.5 MPa or more, and a wire bonding step of causing the semiconductor element to undergo wire bonding in the state that the adhesive sheet is semi-cured.

Abstract: The thermosetting die bonding film of the invention is a thermosetting die bonding film used to produce a semiconductor device, which contains, as main components, 5 to 15% by weight of a thermoplastic resin component and 45 to 55% by weight of a thermosetting resin component, and has a melt viscosity of 400 Pa·s or more and 2500 Pa·s or less at 100° C. before the film is thermally set.

Abstract: The thermosetting die bonding film of the invention is a thermosetting die bonding film used to produce a semiconductor device, which contains, as main components, 5 to 15% by weight of a thermoplastic resin component and 45 to 55% by weight of a thermosetting resin component, and has a melt viscosity of 400 Pa·s or more and 2500 Pa·s or less at 100° C. before the film is thermally set.

Abstract: In a case where the control operation for feeding paper on the front surface of which an image is printed without waiting for completion of the feeding of a document is effected by use of an automatic document feeding device and double face printer, whether or not the image is correctly printed on the front surface of the stacked paper is stored in a stack table when the paper is stacked in the double face printer and the paper on which the image is not correctly printed based on the contents of the status table is discharged when an image is printed on the rear surface of the paper. Thus, the printing result in which the relation between the pages of the front and rear surfaces of the sheets of paper on which plural pages of images are printed by double face printing is the same as in the normal case can be attained and the paper which is not correctly printed can be easily distinguished.