Abstract: A thermoelectric power generation system 20 includes a heat exchanger 1 having double tubes which are an inner tube 1a and an outer tube 1b, and a thermoelectric power generation module 2 mounted between the inner tube and the outer tube. The thermoelectric power generation module generates thermoelectric power using a temperature difference between a medium inside the inner tube and a medium outside the outer tube, and a highly thermal conductive elastic sheet 3a, 3b is mounted between the thermoelectric power generation module and the inner tube and/or the outer tube in close contact therewith.

Abstract: A tubular heat exchanger with a thermoelectric power generation function includes an inner tube 4 in which coolant flows, a thermoelectric power generation module 5 attached to an outer peripheral surface of the inner tube 4, an outer tube 3 attached to an outer peripheral surface of the thermoelectric power generation module 5, and heat collection fins 6 provided on an outer peripheral surface of the outer tube 3. The thermoelectric power generation module 5 generates thermoelectric power using the outer peripheral surface of the inner tube 4 as a low temperature source and an inner peripheral surface of the outer tube 3 as a high temperature source. The inner peripheral surface of the outer tube 3 closely contacts the outer peripheral surface of the thermoelectric power generation module 5.

Abstract: In the present invention, provided is a plasma processing method which reduces or eliminates the emission of contaminating matters caused by a quality-altered layer on the surface of yttria of a processing chamber's inner wall and parts inside the processing chamber. It is the plasma processing method including an etching step of setting a sample inside the processing chamber, and etching the sample, a deposition-product removing step of removing a deposition product by using a plasma, the deposition product being deposited inside the processing chamber by the etching step, the plasma being generated using a gas which contains fluorine or chlorine, and a step of exposing, to a rare-gas-based plasma, the inside of the processing chamber after the deposition-product removing step.

Abstract: The invention provides a plasma processing method which includes (i) feeding a transferring gas which decreases a pressure difference between a processing chamber and a transfer chamber in order to prevent particles from adhering a processing sample, to be processed, passed to the processing chamber, before transferring the sample into the processing chamber; (ii) transferring the sample into the processing chamber while continuing to feed the transferring gas to the processing chamber; (iii) generating a plasma from the transferring gas in the processing chamber while continuing to feed the transferring gas to the processing chamber after the step of transferring the sample; and (iv) changing a gas supplied to the processing chamber from the transferring gas used in the step of generating the plasma to a processing gas for subjecting the processing sample, different from a cleaning sample, to plasma processing.

Abstract: A vacuum processing method using an apparatus including a processing chamber disposed in a vacuum reactor and having plasma formed thereon, a sample stage having a sample placed on the upper plane thereof, and a gas introducing mechanism, wherein the sample stage includes a gas supply port for introducing thermal conductance gas between the sample stage and the sample to be processed. The method includes placing a dummy sample on the sample stage, introducing dust removal gas between the sample stage and the dummy sample, and removing particles attached to the sample stage via the flow of dust removal gas.

Abstract: A plasma processing apparatus for generating highly-uniform and stable plasma. In an apparatus for generating plasma by using a ? wave, concerning a method for rotating the ? wave in terms of time, a plurality of (larger than two and smaller than four) waveguides are used, then forming an angle between the respective waveguides, and setting a phase difference between respective electric fields therein. This configuration allows introduction of the circularly polarized wave into a processing chamber. At this time, there are provided configuration components such as a waveguide locating method, a unit therefor, a ?-wave merging box, and a reflective-wave control unit using a reflection control chamber.

Abstract: In the present invention, provided is a plasma processing method which reduces or eliminates the emission of contaminating matters caused by a quality-altered layer on the surface of yttria of a processing chamber's inner wall and parts inside the processing chamber. It is the plasma processing method including an etching step of setting a sample inside the processing chamber, and etching the sample, a deposition-product removing step of removing a deposition product by using a plasma, the deposition product being deposited inside the processing chamber by the etching step, the plasma being generated using a gas which contains fluorine or chlorine, and a step of exposing, to a rare-gas-based plasma, the inside of the processing chamber after the deposition-product removing step.

Abstract: The invention provides a dry etching method for performing a wiring process on a semiconductor substrate using a plasma etching apparatus, wherein the wiring process is performed without causing disconnection or deflection of the wiring. The invention provides a dry etching method for performing a wiring process on a semiconductor substrate using a plasma etching apparatus, wherein during a step for etching a material 12 to be etched using a mask pattern composed of a photoresist 15 and inorganic films 14 and 13 made of SiN, SiON, SiO and the like formed on the material 12 to be etched, a mixed gas formed of a halogen-based gas such as chlorine-containing gas or bromine-containing gas and at least one fluorine-containing gas selected from a group of fluorine-containing gases composed of CF4, CHF3, SF6 and NF3 is used to reduce the mask pattern and the processing dimension of the material to be etched substantially equally during processing of the material 12 to be etched.

Abstract: An object of the invention is to provide a dry etching method of a metal oxide High-k film having etching characteristics which achieve a small etching rate difference and a small profile difference between open area and dense area while keeping a high selectivity to a polysilicon underlying film. In the method of dry-etching a High-k film by using a plasma, a small amount of fluorocarbon gas having a high carbon ratio is added to a BCl3 gas mixed with a rare gas.

Abstract: The invention provides a plasma processing method capable of reducing particle caused by flinging up of particles by airflow due to the pressure fluctuation in the processing chamber during the time the sample is carried into the processing chamber, subjected to plasma processing and carried out of the processing chamber.

Abstract: The invention provides a vacuum processing apparatus having a function for removing particles on the surface of the sample stage in order to improve the yield of the sample being processed.

Abstract: The invention provides a plasma processing method capable of reducing particle caused by flinging up of particles by airflow due to the pressure fluctuation in the processing chamber during the time the sample is carried into the processing chamber, subjected to plasma processing and carried out of the processing chamber.

Abstract: A vacuum processing method using an apparatus including a processing chamber disposed in a vacuum reactor and having plasma formed thereon, a sample stage having a sample placed on the upper plane thereof, and a gas introducing mechanism, wherein the sample stage includes a gas supply port for introducing thermal conductance gas between the sample stage and the sample to be processed. The method includes placing a dummy sample on the sample stage, introducing dust removal gas between the sample stage and the dummy sample, and removing particles attached to the sample stage via the flow of dust removal gas.

Abstract: The invention provides a method for determining an end point of seasoning of a plasma processing apparatus capable of reducing the time required for seasoning after performing wet cleaning and determining the optimum end point of seasoning with superior repeatability. The present method comprises, after performing wet cleaning (S501) of the plasma processing apparatus, using a processing gas containing SF6 as processing gas and applying an RF bias double that of mass production conditions to perform seasoning (S502), acquiring emission data of SiF and Ar during plasma processing using test conditions using SiF and Ar gases (S503), determining whether the computed value of emission intensities during seasoning is equal to or smaller than the computed value of emission intensities during stable mass production (S504), and determining the endpoint of the seasoning process when the value is determined to be equal or smaller.

Abstract: The invention provides a vacuum processing apparatus having a function for removing particles on the surface of the sample stage in order to improve the yield of the sample being processed.

Abstract: The invention provides a dry etching method for performing a wiring process on a semiconductor substrate using a plasma etching apparatus, wherein the wiring process is performed without causing disconnection or deflection of the wiring. The invention provides a dry etching method for performing a wiring process on a semiconductor substrate using a plasma etching apparatus, wherein during a step for etching a material 12 to be etched using a mask pattern composed of a photoresist 15 and inorganic films 14 and 13 made of SiN, SiON, SiO and the like formed on the material 12 to be etched, a mixed gas formed of a halogen-based gas such as chlorine-containing gas or bromine-containing gas and at least one fluorine-containing gas selected from a group of fluorine-containing gases composed of CF4, CHF3, SF6 and NF3 is used to reduce the mask pattern and the processing dimension of the material to be etched substantially equally during processing of the material 12 to be etched.

Abstract: The invention provides a plasma processing method capable of reducing particle caused by flinging up of particles by airflow due to the pressure fluctuation in the processing chamber during the time the sample is carried into the processing chamber, subjected to plasma processing and carried out of the processing chamber.

Abstract: The invention provides an etching method having selectivity of a high-K material such as Al2O3 to polysilicon or hard mask. The present invention provides a method for manufacturing a semiconductor device by etching, using a plasma etching apparatus, a sample including an interlayer insulating layer 14 formed of a high-K material such as Al2O3 of a hard mask 11 and a Poly-Si layer 15 in contact with the interlayer insulating layer, wherein the method includes etching the high-K material 14 using BCl3, He and HBr while setting a temperature of a sample stage to normal temperature and applying a time-modulated high bias voltage, and repeating said etching process and a deposition process using SiCl4, BCl3 and He.

Abstract: An object of the invention is to provide a dry etching method of a metal oxide High-k film having etching characteristics which achieve a small etching rate difference and a small profile difference between open area and dense area while keeping a high selectivity to a polysilicon underlying film. In the method of dry-etching a High-k film by using a plasma, a small amount of fluorocarbon gas having a high carbon ratio is added to a BCl3 gas mixed with a rare gas.

Abstract: The invention provides a plasma processing method capable of reducing particle caused by flinging up of particles by airflow due to the pressure fluctuation in the processing chamber during the time the sample is carried into the processing chamber, subjected to plasma processing and carried out of the processing chamber.